# IGBT, 12 A, 3 V, 75 W, 1.7 kV, TO-268, 3 Pins
**URL**: https://novapart.co/products/IXGT6N170/igbt-12-a-3-v-75-w-17-kv-to-268-pins
**SKU**: IXGT6N170
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €7.1300
**Stock**: 10+
**Lead Time**: 232 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-268 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 12A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Saturation Voltage | 3V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3930338/)
## **High Voltage IXGT6N170 IGBT IXGH6N170**
**V = 1700V** CES **I = 6A** C90 **V 4.0V** CE(sat) **t = 290ns** fi(typ)
## **TO-268 (IXGT)**
|**Symbol Test Conditions**|**Symbol Test Conditions**|**Maximum Ratings**||||G|G||||
|---|---|---|---|---|---|---|---|---|---|---|
|**VCES**|TC= 25°C to 150°C 1700 V|= 25°C to 150°C 1700 V|= 25°C to 150°C 1700 V|||||E|||
|**VCGR**|TJ= 25°C to 150°C, RGE= 1M|1700|V||||||C(Tab)||
|**VGES**|Continuous
± 20|± 20|V||||||||
|**VGEM**|Transient
± 30|± 30|V|**TO-247 (IXGH)**|||||||
|**IC25**T|TC= 25°C
12|12|A||||||||
|**IC90**
**ICM**|TC = 90°C
TC= 25°C, 1ms|6
24|A
A|G|||||||
|**SSOA**
**(RBSOA)**|VGE= 15V, TVJ= 125°C, RG= 33I
Clamped Inductive Load @ 0.8 • V|ICM= 12
Clamped Inductive Load @ 0.8 • VCES|A|C|E||||C(Tab)||
|**PC**|TC= 25°C|75|W|G = Gate C = Collector
E = Emitter Tab = Collector||G = Gate C = Collector
E = Emitter Tab = Collector|G = Gate C = Collector
E = Emitter Tab = Collector|G = Gate C = Collector
E = Emitter Tab = Collector||G = Gate C = Collector
E = Emitter Tab = Collector|
|**TJ**|- 55 ... +150|- 55 ... +150
|C||||||||
|**TJM**||150
|C||||||||
|**Tstg**|- 55 ... +150|- 55 ... +150
|C||||||||
|**TL**Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300||°C|**Features**|||||||
|**TSOLD**1.6 mm (0.062in.) from Case for 10s 260
**Md**|1.6 mm (0.062in.) from Case for 10s 260
Mounting Torque (TO-247) 1.13/10|1.6 mm (0.062in.) from Case for 10s 260
°C
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.||International Standard Packages
High VoltagePackage||||||International Standard Packages|
|**Weight**|TO-268|4|g||||||||
||TO-247|6|g|**Advantages**|**Advantages**|**Advantages**|||||
> International Standard Packages
> High VoltagePackage
## **Advantages**
- High Power Density
- Low Gate Drive Requirement
|||||||High Power Density
Low Gate Drive Requirement|
|---|---|---|---|---|---|---|
|**Symbol Test Conditions**
**Characteristic Values**|**Characteristic Values**|||||Low Gate Drive Requirement|
|(TJ= 25°C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**|||
|**BVCES**
IC= 250A, VGE= 0V
1700
**VGE(th)**
IC= 250A, VCE= VGE
3.0
**ICES**
VCE= 0.8 • VCES, VGE= 0V
TJ= 125°C
**IGES**
VCE= 0V, VGE= ± 20V
**VCE(sat)**
IC= IC90, VGE= 15V, Note 1 3.0 4.0
TJ= 125°C 4.0|1700
3.0
10 μA
100 μA
= 15V, Note 1 3.0 4.0
= 125°C 4.0|5.0
10 μA
100 μA
= 15V, Note 1 3.0 4.0
= 125°C 4.0
~~| |~~
~~|~~~
~~| |~~~||5.0
10 μA
100 μA
±100 nA
= 15V, Note 1 3.0 4.0|V
V
10 μA
100 μA
±100 nA
V|**Applications**
Capacitor Discharge & Pulse Circuits
Uninterruptible Power Supplies (UPS)
Motor Drives
DC Servo & Robot Drives
DC Choppers
Switched-Mode & Resonant-Mode
Power Supplies|
© 2015 IXYS CORPORATION, All Rights Reserved
DS98989C(9/15)
**IXGH6N170 IXGT6N170**
|**Symbol**
**Test Conditions Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs**
IC= 6A, VCE= 10V, Note 1 3.0 4.5
S
**IC(ON)**
VGE= 15V, VCE= 10V 28
A
**Cies**
330
pF
**Coes**
VCE= 25V, VGE= 0V, f = 1MHz
23
pF
**Cres**
6
pF
**Qg**
20.0
nC
**Qge**
IC = 6A, VGE= 15V, VCE= 0.5**•**VCES
3.6
nC
**Qgc**
8.0
nC
**td(on)**
40
ns
**tri**
36
ns
**td(off)**
250 500 ns
**tfi**
290 500
ns
**Eoff**
1.5 2.5
mJ
**td(on)**
45
ns
**tri**
40
ns
**Eon**
0.5
mJ
**td(off)**
300
ns
**tfi**
300
ns
**Eoff**
2.0
mJ
**RthJC**
1.65 °C/W
**RthCK**
TO-247
0.21
°C/W
**Inductive load, TJ = 25°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
**Inductive load, TJ = 125°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
Notes:
1. Pulse test, t300μs, duty cycle, d2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJor RG.|**Symbol**
**Test Conditions Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs**
IC= 6A, VCE= 10V, Note 1 3.0 4.5
S
**IC(ON)**
VGE= 15V, VCE= 10V 28
A
**Cies**
330
pF
**Coes**
VCE= 25V, VGE= 0V, f = 1MHz
23
pF
**Cres**
6
pF
**Qg**
20.0
nC
**Qge**
IC = 6A, VGE= 15V, VCE= 0.5**•**VCES
3.6
nC
**Qgc**
8.0
nC
**td(on)**
40
ns
**tri**
36
ns
**td(off)**
250 500 ns
**tfi**
290 500
ns
**Eoff**
1.5 2.5
mJ
**td(on)**
45
ns
**tri**
40
ns
**Eon**
0.5
mJ
**td(off)**
300
ns
**tfi**
300
ns
**Eoff**
2.0
mJ
**RthJC**
1.65 °C/W
**RthCK**
TO-247
0.21
°C/W
**Inductive load, TJ = 25°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
**Inductive load, TJ = 125°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
Notes:
1. Pulse test, t300μs, duty cycle, d2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJor RG.|**Symbol**
**Test Conditions Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs**
IC= 6A, VCE= 10V, Note 1 3.0 4.5
S
**IC(ON)**
VGE= 15V, VCE= 10V 28
A
**Cies**
330
pF
**Coes**
VCE= 25V, VGE= 0V, f = 1MHz
23
pF
**Cres**
6
pF
**Qg**
20.0
nC
**Qge**
IC = 6A, VGE= 15V, VCE= 0.5**•**VCES
3.6
nC
**Qgc**
8.0
nC
**td(on)**
40
ns
**tri**
36
ns
**td(off)**
250 500 ns
**tfi**
290 500
ns
**Eoff**
1.5 2.5
mJ
**td(on)**
45
ns
**tri**
40
ns
**Eon**
0.5
mJ
**td(off)**
300
ns
**tfi**
300
ns
**Eoff**
2.0
mJ
**RthJC**
1.65 °C/W
**RthCK**
TO-247
0.21
°C/W
**Inductive load, TJ = 25°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
**Inductive load, TJ = 125°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
Notes:
1. Pulse test, t300μs, duty cycle, d2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJor RG.|**Symbol**
**Test Conditions Characteristic Values**
(TJ= 25°C, Unless Otherwise Specified)
**Min. Typ. Max.**
**gfs**
IC= 6A, VCE= 10V, Note 1 3.0 4.5
S
**IC(ON)**
VGE= 15V, VCE= 10V 28
A
**Cies**
330
pF
**Coes**
VCE= 25V, VGE= 0V, f = 1MHz
23
pF
**Cres**
6
pF
**Qg**
20.0
nC
**Qge**
IC = 6A, VGE= 15V, VCE= 0.5**•**VCES
3.6
nC
**Qgc**
8.0
nC
**td(on)**
40
ns
**tri**
36
ns
**td(off)**
250 500 ns
**tfi**
290 500
ns
**Eoff**
1.5 2.5
mJ
**td(on)**
45
ns
**tri**
40
ns
**Eon**
0.5
mJ
**td(off)**
300
ns
**tfi**
300
ns
**Eoff**
2.0
mJ
**RthJC**
1.65 °C/W
**RthCK**
TO-247
0.21
°C/W
**Inductive load, TJ = 25°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
**Inductive load, TJ = 125°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2
Notes:
1. Pulse test, t300μs, duty cycle, d2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJor RG.|**TO268 Otli**||
|---|---|---|---|---|---|
|||||**- une**||
|**gfs**
IC= 6A, VCE= 10V, Note 1 3.0||4.5||||
|**IC(ON)**
VGE= 15V, VCE= 10V
**Cies**
||28
330||||
|**Coes**
VCE= 25V, VGE= 0V, f = 1MHz
**Cres**
||23
6||||
|**Qg**
**Qge**
IC = 6A, VGE= 15V, VCE= 0.5**•**VCES
**Qgc**
**td(on)**
**tri**
**td(off)**
**tfi**
**Eoff**
**Inductive load, TJ = 25°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2||20.0
3.6||||
|||||||
|||||Terminals: 1 - Gate|2,4 - Collector|
||
|8.0
40
36
250
290
1.5|nC
ns
ns
500 ns
500
ns
2.5
mJ
ns
ns
mJ
ns
ns
mJ|3 - Emitter||
|**td(on)**
**tri**
**Eon**
**td(off)**
**tfi**
**Eoff**
**Inductive load, TJ = 125°C**
IC= 6A, VGE= 15V
VCE= 0.8**•**VCES, RG= 33
Note 2|
|45
40
0.5
300
300
2.0||||
|**RthJC**
**RthCK**
TO-247
||||||
|||
0.21||**TO-247 Outline**
Terminals: 1 - Gat
3 - Emit
**1 2 3**
Dim.
Millimete
Min.
M
A
4.7
A1
2.2
2.
A2
2.2
b
1.0
b1
1.65
2.
b~~2~~
2.87
3.
C
.4
D
20.80
21.
E
15.75
16.
e
5.20
5.
L
19.81
20.
L1
4.
P
3.55
3.
Q
5.89
6.
R
4.32
5.
S
6.15 BSC|e
2 - Collector
ter
~~e~~
P
r
Inches
ax.
Min.
Max.
5.3
.185
.209
54
.087
.102
2.6
.059
.098
1.4
.040
.055
13
.065
.084
12
.113
.123
.8
.016
.031
46
.819
.845
26
.610
.640
72
0.205 0.225
32
.780
.800
50
.177
65
.140
.144
40
0.232 0.252
49
.170
.216
242 BSC|
- IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
**IXGH6N170 IXGT6N170**
**==> picture [264 x 215] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 1. Output Characteristics @ TJ = 25ºC
12
VGE = 15V
13V
10 11V
8
9V
6
4 7V
2
0
0 1 2 3 4 5 6
VCE - Volts
- Amperes
IC
**----- End of picture text -----**
**==> picture [264 x 215] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
30
VGE = 15V
25 13V
20
11V
15
9V
10
7V
5
0
0 2 4 6 8 10 12 14 16 18
VCE - Volts
Amperes
-
IC
**----- End of picture text -----**
**==> picture [538 x 427] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 4. Dependence of VCE(sat) on
Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature
12 2.0
VGE = 15V
13V 1.8 VGE = 15V
10 11V
I C = 12A
1.6
8
1.4
9V
6 1.2
I C = 6A
1.0
7V
4
0.8
2 0.6 I C = 3A
0 0.4
0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade
Fig. 5. Input Admittance Fig. 6. Transconductance
10 5
T J = - 40ºC TJ = - 40ºC
9 25ºC
125ºC
8 4
7 25ºC
6 3
125ºC
5
4 2
3
2 1
1
0 0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 1 2 3 4 5 6 7 8 9 10
VGE - Volts IC - Amperes
- Normalized
- Amperes
IC
CE(sat)
V
Siemens
Amperes -
- f s
IC g
**----- End of picture text -----**
© 2015 IXYS CORPORATION, All Rights Reserved
**IXGH6N170 IXGT6N170**
**==> picture [525 x 411] intentionally omitted <==**
**----- Start of picture text -----**
Fig. 7. Gate Charge Fig. 8. Capacitance
16 1,000
f = 1 MHz
14 Poe I V CCE= 6A= 850V ee eee
12 I G = 10mA Cies
100
10
Hope EE
8 C oes
BEES SEEH SHEE” 4000005 i | |ttf
6
PCRPEereeree 10 Nee
4 YE} | tt te SSE
Cres
2
0 1
0 AE 2 4 6 8 10 12 14 16 18 20 0 EY 5 10 PP 15 20 Pee 25 30 35 40
QG - NanoCoulombs VCE - Volts
Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Maximum Transient Thermal Impedance
10
12 a eeee
10
1
8
6 PEER) LY
PEEP 0.1 Sse a
4
T J = 125ºC
2 HEA RG = 33Ω >
dv / dt < 10V / ns
0 0.01
EEE ca a
200 400 600 800 1000 1200 1400 1600 1800 0.00001 0.0001 0.001 0.01 0.1 1 10
VCE - Volts Pulse Width - Seconds
- Volts
GE
V
Capacitance - PicoFarads
- ºC / W
- AmperesIC Z(th)JC
**----- End of picture text -----**
**Fig. 11. Cauer Thermal Network**
i Ri (°C/W) Ci (J/°C) 1 0.11615 0.0019257 2 0.29930 0.0016574 3 0.26377 0.0262960
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_6N170 (2N) 9-23-15-B
**==> picture [157 x 46] intentionally omitted <==**
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
## Links
- [View this product on Novapart](https://novapart.co/products/IXGT6N170/igbt-12-a-3-v-75-w-17-kv-to-268-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixgt6n170/transistor-igbt-1-7kv-12a-to-268/dp/3930338)
---
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