# TRANSISTOR, IGBT, 300V, 400A, TO-264

![Product image](https://novapart.co/image/farnell:3949077/)

**URL**: https://novapart.co/products/IXGK400N30A3/transistor-igbt-300v-400a-to-264
**SKU**: IXGK400N30A3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €23.4600
**Stock**: 10+
**Lead Time**: 82 days (indicative)

## Description

Continuous Collector Current:400A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:1kW; Collector Emitter Voltage Max:300V; No. of Pins:3Pins; Operat 03AH1125

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | GenX3 Series |
| Power Dissipation | 1kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-264 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 400A |
| Collector Emitter Voltage Max | 300V |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949077/)

## **GenX3[TM ] 300V IGBT** 

Ultra-low Vsat PT IGBTs for up to 10kHz switching 

## **IXGK400N30A3 IXGX400N30A3*** 

## ***Obsolete Part Number** 

**V =   300V** CES **I =   400A** C25 **V ≤ 1.15V** CE(sat) 

## **TO-264** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**<br>T|TJ= 25°C to 150°C|300|V|
|**VCGR**|TJ= 25°C to 150°C, RGE= 1MΩ|300|V|
|**VGES**|Continuous|±20|V|
|**VGEM**|Transient|±30|V|
|**IC25**|TC = 25°C|400|A|
|**IC110**|TC = 110°C|200|A|
|**ILRMS**|Terminal Current Limit|75|A|
|**ICM**|TC = 25°C, 1ms|400|A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 1Ω|ICM= 400|A|
|**(RBSOA)**|Clamped inductive load|@ 0.8 • VCES||
|**PC**|TC = 25°C|1000|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|Maximum lead temperature for soldering|300|°C|
|**TSOLD**|1.6 mm (0.062 in.) from case for 10|260|°C|
|**Md**|Mounting torque ( IXGK )|1.13/10    Nm/lb.in.||
|**FC**|Mounting force   ( IXGX )|20..120/4.5..27|N/lb.|
|**Weight**|TO-264|10|g|
||PLUS247|6|g|



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G<br>C EE (TAB)<br>**----- End of picture text -----**<br>


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PLUS247 [TM]<br>G<br>C  (TAB)<br>E<br>**----- End of picture text -----**<br>


|G  =  Gate|G  =  Gate|G  =  Gate|E       =   Emitter|E       =   Emitter|E       =   Emitter|
|---|---|---|---|---|---|
|C  =  Collector|C  =  Collector|C  =  Collector|TAB  =   Collector|TAB  =   Collector|TAB  =   Collector|



## **Features** 

Optimized for low switching losses Square RBSOA High avalanche capability International standard packages 

## **Advantages** 

|(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|---|---|---|
|**BVCES**<br>IC<br>= 1mA, VGE= 0V<br>300||V|
|**VGE(th)**<br>IC<br>= 4mA, VCE= VGE<br>3.0||5.0     V|
|**ICES**<br>VCE = VCES<br>VGE= 0V<br>TJ= 125°C||50   μA<br>2 mA|
|**IGES**<br>VCE = 0V, VGE= ±20V||±400   nA|
|**VCE(sat)**<br>IC<br>= 100A, VGE= 15V, Note 1<br>IC<br>= 400A|1.70|1.15     V<br>V|



High power density Low gate drive requirement 

## **Applications** 

Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits 

DS99584A(11/08) 

© 2008 IXYS CORPORATION, All rights reserved 

## **IXGK400N30A3 IXGX400N30A3** 

|(TJ= 25°C, unless otherwise specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**<br>~~—~~|
|---|---|
|**gfs**<br>IC<br>= 60A, VCE= 10V, Note 1<br>100          170|100          170<br>~~—~~|
|**Cies**<br>19<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1 MHz<br>1350<br>**Cres**<br>190|19<br>1350<br>190<br>~~—~~|
|**Qg(on)**<br>560<br>**Qge**<br>IC= 100A, VGE= 15V, VCE= 0.5 • VCES83<br>**Qgc**<br>185|560<br>83<br>185|
|**td(on)**<br>45<br>**tr**<br>45<br>**td(off)**<br>210<br>**tf**107                       ns<br>**Resistive load, TJ = 25°C**<br>IC= 100A, VGE= 15V<br>VCE= 240V, RG= 1Ω|45<br>45<br>210<br>107                       ns|
|**td(on)**<br>47                     ns<br>**tr**<br>53                       ns<br>**td(off)**240                     ns<br>**tf**315                     ns<br>**Resistive load, TJ = 125°C**<br>IC= 100A, VGE= 15V<br>VCE= 240V, RG= 1Ω|47                     ns<br>53                       ns<br>240                     ns<br>315                     ns|
|**RthJC**<br>**RthCK**<br>0.15|0.125<br>0.15|



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TO-264 (IXGK) Outline<br>**----- End of picture text -----**<br>


## **PLUS247[TM] (IXGX) Outline** 

Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 

|Dim.<br>Millimeter<br>Min.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>4.83<br>A1<br>2.29<br>A~~2~~<br>1.91|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|~~2~~<br>b<br>1.14<br>b1<br>1.91<br>b~~2~~<br>2.92|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|~~2~~<br>C<br>0.61<br>D<br>20.80<br>E<br>15.75|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>5.45 BSC<br>L<br>19.81<br>L1<br>3.81|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>5.59<br>R<br>4.32|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXGK400N30A3 IXGX400N30A3** 

**Fig. 1. Output Characteristics @ 25ºC** 

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350<br>VGE = 15V<br>300           11V<br>         9V<br>250<br>200 7V<br>150<br>100<br>50<br>5V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4<br>VCE - Volts<br>Fig. 3. Dependence of VCE(sat) on<br>Junction Temperature<br>1.3<br>VGE = 15V<br>1.2<br>I C = 300A<br>1.1<br>1.0<br>I C = 200A<br>0.9<br>0.8<br>I C = 100A<br>0.7<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Amperes<br> -<br>IC<br> - Normalized<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


## **Fig. 5. Input Admittance** 

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280<br>240<br>200<br>TJ  = 125ºC<br>          25ºC<br>160         - 40 º C<br>120<br>80<br>40<br>0<br>4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8<br>VGE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


## **Fig. 2. Output Characteristics @ 125ºC** 

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300<br>VGE = 15V<br>          11V<br>250          9V<br>200<br>7V<br>150<br>100<br>50 5V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VCE - Volts<br>Fig. 4. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage<br>3.0<br>2.8 T J   = 25ºC<br>2.6<br>2.4<br>I C = 300A<br>2.2         200A<br>        100A<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>5 6 7 8 9 10 11 12 13 14 15<br>VGE - Volts<br> - Amperes<br>IC<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


**Fig. 6. Transconductance** 

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350<br>TJ = - 40 º C<br>300<br>250 25ºC<br>200<br>125ºC<br>150<br>100<br>50<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220 240 260<br>IC - Amperes<br>Siemens<br> -<br> f s<br>g<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION, All rights reserved 

## **IXGK400N30A3 IXGX400N30A3** 

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Fig. 7. Gate Charge Fig. 8. Capacitance<br>16<br>100,000<br> V CE = 150V<br>14 f = 1 MHz<br> I C = 100A<br> I G = 10 mA<br>12<br>10 10,000 C ies<br>8<br>Coes<br>6<br>1,000<br>4<br>2 Cres<br>0 100<br>0 50 100 150 200 250 300 350 400 450 500 550 600 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VCE - Volts<br> - Volts<br>GE<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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Fig. 10. Maximum Transient Thermal<br>Impedance<br>Fig. 9. Reverse-Bias Safe Operating Area<br>450 1.00<br>4 00<br>350<br>300 0.10<br>250<br>200<br>150 0.01<br>100  TJ = 125ºC<br> RG = 1Ω<br> dV / dt < 10V / ns<br>50<br>0 0.00<br>25 50 75 100 125 150 175 200 225 250 275 300 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VCE - Volts Pulse Width - Seconds<br> - ºC / W<br> - Amperes<br>IC (th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS REF: G_400N30A3(96)11-18-08-A 

## **IXGK400N30A3 IXGX400N30A3** 

## **Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature** 

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56<br>55  RG = 1Ω<br>54  V GE = 15V<br>53  VCE = 240V  I C = 300A, 200A, 100A<br>52<br>51<br>50<br>49<br>48<br>47<br>46<br>45<br>44<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Nanoseconds<br> -<br>t r<br>**----- End of picture text -----**<br>


**Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance** 

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130 80<br>120 t  r t d(on) - - - -  76<br> TJ = 125ºC,  VGE = 15V<br>110 72<br> VCE = 240V<br>100 68<br>90 I  C = 200A, 100A 64<br>80 60<br>70 56<br>60 52<br>50 48<br>40 44<br>30 40<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 15. Resistive Turn-off Switching Times<br>vs. Gate Resistance<br>380 1100<br>360 t f td(off) - - - -  1000<br>340  TJ = 125ºC,  VGE = 15V 900<br> VCE = 240V<br>320 800<br>300 700<br>I C = 100A<br>280 600<br>260 500<br>I C = 200A, 300A<br>240 400<br>220 300<br>200 200<br>180 100<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> d ( o n )t<br> - Nanoseconds<br>t r<br> - Nanoseconds<br> d ( o f f )t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br>


## **Fig. 12. Resistive Turn-on Rise Time vs. Collector Current** 

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56<br>55<br>54<br>TJ = 125ºC<br>53<br>52  R G = 1Ω<br>51  VGE = 15V<br>50  V CE  = 240V<br>49<br>48<br>47 TJ = 25ºC<br>46<br>45<br>44<br>100 120 140 160 180 200 220 240 260 280 300<br>IC - Amperes<br> - Nanoseconds<br>t r<br>**----- End of picture text -----**<br>


**Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature** 

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400 250<br>t  f t d(off) - - - -<br>350  R G  = 1Ω,  V GE  = 15V 240<br> V CE  = 240V<br>300 230<br>250 220<br>I C = 300A, 200A, 100A<br>200 210<br>150 200<br>100 190<br>50 180<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 16. Resistive Turn-off Switching Times<br>vs. Collector Current<br>350 240<br>t  f t d(off) - - - -<br>300  R G  = 1Ω,  V GE  = 15V 230<br> VCE = 240V<br>250 220<br>T J  = 125ºC<br>200 210<br>150 200<br>TJ = 25ºC<br>100 190<br>50 180<br>100 120 140 160 180 200 220 240 260 280 300<br>IC - Amperes<br> d ( o f f )t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br> d ( o f f )t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION, All rights reserved 

IXYS REF: G_400N30A3(96)11-18-08-A 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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