# TRANSISTOR, IGBT, 600V, 48A, TO-247

![Product image](https://novapart.co/image/farnell:3949076/)

**URL**: https://novapart.co/products/IXGH48N60B3D1/transistor-igbt-600v-48a-to-247
**SKU**: IXGH48N60B3D1
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.7100
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Continuous Collector Current:48A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:300W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operati 03AH1099

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | GenX3 Series |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 48A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949076/)

## Preliminary Technical Information 

## **GenX3[TM] 600V IGBT IXGH48N60B3D1 with Diode** 

Medium speed low Vsat PT IGBTs 5-40 kHz switching 

**V =   600V** CES **I =   48A** C110 **V ≤ 1.8V** CE(sat) 

|**Symbol      Test Conditions**|**Symbol      Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**|TC= 25°C to 150°C                                                    600|= 25°C to 150°C                                                    600|V|
|**VCGR**|TJ= 25°C to 150°C, RGE= 1MΩ|600|V|
|**VGES**|Continuous<br>± 20|± 20|V|
|**VGEM**|Transient<br>± 30|± 30|V|
|**IC110**|TC= 110°C|48|A|
|**ID110**T|TC= 110°C|30                           A|30                           A|
|**ICM**|TC = 25°C, 1ms|280|A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 5ΩI|ICM= 120|A|
|**(RBSOA)**|Clamped inductive load @≤600V|||
|**PC**|TC= 25°C|300|W|
|**TJ**|-55 ... +150|-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**|-55 ... +150|-55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from case for 10s|300|°C|
|**TSOLD**|Plastic body for 10 seconds|260|°C|
|**Md**|Mounting torque                                                   1.13/10             Nm/lb.in.|Mounting torque                                                   1.13/10             Nm/lb.in.||
|**Weight**||6|g|



## **TO-247(IXGH)** 

**==> picture [104 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
G C  ( TAB )<br>E<br>**----- End of picture text -----**<br>


G  = Gate C     = Collector E  = Emitter TAB = Collector 

## **Features** 

Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard package 

## **Advantages** 

High power density Low gate drive requirement 

## **Applications** 

|(TJ= 25°C unless otherwise specified)**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|
|---|---|---|
|**BVCES**<br>IC= 250μA, VGE= 0V<br>600<br>~~|~~|~~|~~|V|
|**VGE(th)**<br>IC= 250μA, VCE= VGE<br>3.0<br>~~|~~|5.0<br>~~|~~|5.0 V|
|**ICES**<br>VCE= VCES<br>VGE= 0V<br>TJ= 125°C<br>1.75  mA<br>~~|~~|300<br>1.75  mA<br>~~|_~~|300μA<br>1.75  mA|
|**IGES**<br>VCE= 0V, VGE= ± 20V<br>|±100 nA<br>~~_~~<br>~~|~~|±100 nA|
|**VCE(sat)**<br>IC= 32A, VGE= 15V, Note 1<br>1.8     V|1.8     V<br>|||1.8     V|



Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 

© 2008 IXYS CORPORATION,  All rights reserved 

DS100036(09/08) 

## **IXGH48N60B3D1** 

**==> picture [543 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Test Conditions       Characteristic Values<br>TO-247 (IXGH) Outline<br>(TJ = 25°C unless otherwise specified)                    Min.       Typ.      Max.<br>gfs   IC = 30A, VCE = 10V, Note 1 28              46  S<br>Cies           3980  pF<br>Coes   VCE = 25V, VGE = 0V, f = 1MHz             190  pF ∅ P<br>Cres               45  pF<br>Q             115  nC<br>g<br>Qge   IC = 40A, VGE = 15V, VCE = 0.5 • VCES               21  nC<br>Q               40  nC<br>gc<br>t               22  ns e<br>d(on)<br>tri Inductive Load, TJ = 25°C               25  ns Dim. Min.MillimeterMax. Min.InchesMax.<br>Et on IC = 30A, VGE = 15V            0.84            130  200  mJns AA1 4.72.2 2.545.3 .087.185 .102.209<br>td(off) VCE = 480V, RG = 5Ω             116         200   ns Ab 2 1.02.2 1.42.6 .040.059 .055.098<br>fi<br>Eoff            0.66         1.20    mJ bb1 2 1.652.87 2.133.12 .065.113 .084.123<br>C .4 .8 .016 .031<br>t               19  ns<br>d(on) D 20.80 21.46 .819 .845<br>t ri Inductive Load, TJ = 125°C               25  ns E 15.75 16.26 .610 .640<br>e 5.20 5.72 0.205 0.225<br>Eon IC = 30A, VGE = 15V            1.71  mJ L 19.81 20.32 .780 .800<br>t             190  ns L1 4.50 .177<br>d(off)<br>t fi VCE = 480V, RG = 5Ω             157  ns ∅QP 3.555.89 3.656.40 0.232.140 0.252.144<br>Eoff            1.30  mJ RS 4.326.15     BSC5.49 .170242    BSC.216<br>RthJC         0.42   °C/W<br>RthCS                                                                                  0.21               °C/W<br>**----- End of picture text -----**<br>


## **Reverse Diode (FRED) (D1 Version ONLY)** 

|**Reverse Diode (FRED) (D1 Version ONLY)**|**Reverse Diode (FRED) (D1 Version ONLY)**|**Reverse Diode (FRED) (D1 Version ONLY)**|
|---|---|---|
|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br> <br>|||
|**Symbol**<br>**Test Conditions**<br>**Min.**|**Typ.**|**Max.**|
|**VF** **I**F= 30A, VGE= 0V, Note 1<br> <br>TJ= 150°C|<br>1.6|2.8    V<br>V|
|**IRM**<br> <br>**trr**<br>TJ= 100°C<br>IF= 30A, VGE= 0V, VR= 100V<br>-diF/dt =100A/μs<br>IF= 1A; -di/dt = 100A/μs, VR= 30V|4<br>100|A<br>ns|
|**RthJC**<br> <br>**RthCS**<br>|<br>1.5|1.5 °C/W<br>°C/W|



Note 1:   Pulse test, t ≤ 300μs; duty cycle, d  ≤ 2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS reserves the right to change limits, test conditions and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXGH48N60B3D1** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics<br>@ 25ºC<br>80<br>VGE = 15V<br>70           13V<br>          11V<br>9V<br>60<br>50<br>40 7V<br>30<br>20<br>10<br>5V<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ 125ºC** 

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**----- Start of picture text -----**<br>
80<br>VGE = 15V<br>70           13V<br>9V<br>          11V<br>60<br>50 7V<br>40<br>30<br>20<br>5V<br>10<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8<br>VCE - Volts<br>Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage<br>3.8<br>3.6 T J   = 25ºC<br>3.4<br>3.2<br>3.0 I C = 80A<br>        40A<br>2.8         20A<br>2.6<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>5 6 7 8 9 10 11 12 13 14 15<br>VGE - Volts<br> - Amperes<br>IC<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


## **Fig. 2. Extended Output Characteristics @ 25ºC** 

**==> picture [251 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>270 VGE = 15V<br>          13V<br>240           11V<br>210<br>180 9V<br>150<br>120<br>90<br>60 7V<br>30<br>0<br>0 2 4 6 8 10 12 14 16<br>VCE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


## **Fig. 4. Dependence of VCE(sat) on Junction Temperature** 

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**----- Start of picture text -----**<br>
1.4<br>VGE = 15V<br>1.3<br>I C = 80A<br>1.2<br>1.1<br>I C = 40A<br>1.0<br>0.9<br>0.8<br>I C = 20A<br>0.7<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Input Admittance<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>TJ  = 125ºC<br>40           25ºC<br>        - 40ºC<br>2 0<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGE - Volts<br> - Normalized<br>CE(sat)<br>V<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

**IXGH48N60B3D1** 

**Fig. 7. Transconductance** 

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**----- Start of picture text -----**<br>
80<br>TJ = - 40ºC<br>70<br>60<br>25ºC<br>50<br>125ºC<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140<br>IC - Amperes<br>Siemens<br> -<br> f s<br>g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Gate Charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
16<br>14  VCE = 300V<br> I C = 40A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120<br>QG - NanoCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br>


**Fig. 9. Capacitance** 

**Fig. 10. Reverse-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
10,000 140<br>120<br>C ies<br>100<br>1,000<br>80<br>Coes<br>60<br>100<br>40<br>TJ = 125ºC<br>RG = 5Ω<br>C res 20 dV / dt < 10V / ns<br>f = 1 MHz<br>10 0<br>0 5 10 15 20 25 30 35 40 100 150 200 250 300 350 400 450 500 550 600 650<br>VCE - Volts VCE - Volts<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 11. Maximum Transient Thermal Impedance** 

**==> picture [520 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions. 

IXYS REF: G_48N60B3D1(56) 05-05-08-A 

## **IXGH48N60B3D1** 

**Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
4.5 5.0<br>4.0 4.5<br>I C = 60A<br>3.5 4.0<br>3.0 3.5<br>2.5 Eoff      Eon  - - - - 3.0<br>TJ = 125 º C ,  VGE = 15V<br>2.0 V CE  = 480V           2.5<br>1.5 I C = 30A 2.0<br>1.0 1.5<br>0.5 1.0<br>I C = 15A<br>0.0 0.5<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG - Ohms<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.5 3.5<br>Eoff               Eon - - - - I C = 60A<br>3.0 R G  = 5Ω ,  V GE  = 15V 3.0<br>V CE  = 480V<br>2.5 2.5<br>2.0 2.0<br>I  C = 30A<br>1.5 1.5<br>1.0 1.0<br>0.5 0.5<br>I C = 15A<br>0.0 0.0<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 16. Inductive Turn-off<br>Switching Times vs. Collector Current<br>210 230<br>200 t f td(off) - - - -  220<br>190 RG = 5Ω ,  VGE = 15V 210<br>VCE = 480V<br>180 200<br>170 190<br>160 TJ = 125ºC 180<br>150 170<br>140 160<br>130 150<br>120 140<br>TJ = 25ºC<br>110 130<br>100 120<br>15 20 25 30 35 40 45 50 55 60<br>IC - Amperes<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br> - Nanoseconds  d(off)t<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 13. Inductive Switching Energy Loss vs. Collector Current** 

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**----- Start of picture text -----**<br>
3.5 3.5<br>3.0 Eoff     Eon - - - - T J  = 125ºC 3.0<br>RG = 5Ω , VGE = 15V<br>2.5 VCE = 480V         2.5<br>2.0 2.0<br>1.5 1.5<br>TJ = 25ºC<br>1.0 1.0<br>0.5 0.5<br>0.0 0.0<br>15 20 25 30 35 40 45 50 55 60<br>IC - Amperes<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature** 

**==> picture [255 x 386] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 220<br>190 t f td(off) - - - -  210<br>RG = 5Ω ,  VGE = 15V<br>180 200<br>VCE = 480V<br>170 190<br>160 I C = 60A, 15A  180<br>150 170<br>140 160<br>130 I  C = 30A 150<br>120 140<br>110 130<br>I C = 60A, 15A<br>100 120<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 17. Inductive Turn-off<br>Switching Times vs. Gate Resistance<br>220 650<br>210 t f td(off) - - - - 600<br>TJ = 125ºC,  VGE = 15V<br>200 550<br>VCE = 480V<br>190 500<br>180 I C = 60A 450<br>170 400<br>160 350<br>150 I C = 30A 300<br>140 250<br>130 I C = 15A 200<br>120 150<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG - Ohms<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br> d(off)t<br> - Nanoseconds<br>t f<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION,  All rights reserved 

**IXGH48N60B3D1** 

**Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance** 

**==> picture [255 x 396] intentionally omitted <==**

**----- Start of picture text -----**<br>
110 70<br>100 t r                 td(on) - - - -  65<br>90 T J = 125ºC,  V GE = 15V 60<br>VCE = 480V<br>80 55<br>I C = 60A<br>70 50<br>60 45<br>50 40<br>40 35<br>I C = 30A<br>30 30<br>20 25<br>10 I  C = 15A 20<br>0 15<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG - Ohms<br>Fig. 20. Inductive Turn-on<br>Switching Times vs. Junction Temperature<br>65 28<br>60 27<br>55 I  C  = 60A 26<br>50 25<br>45 t r                t d(on) - - - -  24<br>40 R G = 5Ω ,  V GE = 15V 23<br>35 VCE = 480V            22<br>30 I C = 30A 21<br>25 20<br>20 19<br>15 I C = 15A 18<br>10 17<br>5 16<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr  d(on)t<br>t<br> - Nanoseconds<br> - Nanosecondsr  d(on)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 19. Inductive Turn-on Switching Times vs. Collector Current** 

**==> picture [253 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 28<br>55 t r                td(on) - - - -  27<br>50 RG = 5Ω ,  VGE = 15V 25ºC < TJ < 125ºC 26<br>VCE = 480V<br>45 25<br>40 24<br>35 23<br>30 22<br>TJ = 25ºC<br>25 21<br>20 20<br>15 19<br>TJ = 125ºC<br>10 18<br>15 20 25 30 35 40 45 50 55 60<br>IC - Amperes<br> d(on)t<br> - Nanosecondsr<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions. 

IXYS REF: G_48N60B3D1(56) 05-05-08-A 

## **IXGH48N60B3D1** 

**==> picture [518 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 1000 30<br>A nC TVVJR = 100°C= 300V A TVVJR = 100°C= 300V<br>50 25<br>IF 40 Qr800 I IIFFF = 60A = 30A= 15A IRM 20 II IFFF= 60A = 30A= 15A<br>TVJ=150°C 600<br>30 15<br>TVJ=100°C<br>400<br>20 10<br>TVJ=25°C<br>200<br>10 5<br>0 0 0<br>0 1 2 3 V 100 A/μs 1000 0 200 400 600 A/800μs 1000<br>VF -diF/dt -diF/dt<br>**----- End of picture text -----**<br>


Fig. 21. Forward current IF versus VF 

Fig. 22. Reverse recovery charge Qr versus -diF/dt 

Fig. 23. Peak reverse current IRM versus  -diF/dt 

**==> picture [537 x 413] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 90 20 1.00<br>TVJ= 100°C TVJ= 100°C<br>VR = 300V V I F    = 30A μs<br>1.5 trr ns VFR15 VFR 0.75tfr<br>Kf 80 tfr<br>IF= 60A<br>1.0 I F = 30A 10 0.50<br>IRM IF= 15A<br>70<br>0.5 5 0.25<br>Qr<br>0.0 60 0 0.00<br>0 40 80 120 °C 160 0 200 400 600 A/800μs 1000 0 200 400 600 A/800μs 1000<br>TVJ -diF/dt diF/dt<br>Fig. 24. Dynamic parameters Qr, IRM Fig. 25. Recovery time trr versus -diF/dt Fig. 26. Peak forward voltage VFR and<br>versus TVJ tfr versus diF/dt<br>1<br>K/W<br>1<br>0.1<br>ZthJC<br>0.1<br>0.01<br>0. 01<br>0.001 DSEP 29-06<br>0.00001 0.0001 0.001 0.01 0.1 s 1<br>0.001 t<br>0.0001 0.001 0.01 0.1 1<br>Time - Seconds<br>ZthJC - K/W<br>**----- End of picture text -----**<br>


Fig. 27. Transient thermal resistance junction to case 

© 2008 IXYS CORPORATION,  All rights reserved 

IXYS REF: G_48N60B3D1(56) 05-05-08-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixgh48n60b3d1/transistor-igbt-600v-48a-to-247/dp/3949076)
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