# Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:1829731/)

**URL**: https://novapart.co/products/IXGH30N60C3C1/silicon-carbide-igbt-single-transistor-60-a-3-v
**SKU**: IXGH30N60C3C1
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €15.0500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 220W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1829731/)

## **GenX3[TM ] 600V IGBTs w/ SiC Anti-Parallel Diode** 

**High-Speed PT IGBTs for 40 - 100kHz Switching** 

## **IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1** 

**V = 600V** CES **I =   30A** C110 **V ≤ 3.0V** CE(sat) **t = 47ns** fi(typ) 

**TO-263 AA (IXGA)** 

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G<br>E<br>C (Tab)<br>**----- End of picture text -----**<br>


|**Symbol      Test Conditions**|**Symbol      Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**<br>TC= 25°C to 150°C                                                     600<br>V<br>**VCGR**<br>TJ= 25°C to 150°C, RGE= 1MΩ600<br>V<br>**VGES**<br>Continuous<br>± 20<br>V<br>**VGEM**<br>Transient<br>± 30<br>V<br>~~Sn~~||||
|**IC25**|TC= 25°C                                                                     60|= 25°C                                                                     60|A|
|**IC110**|TC= 110°C<br>30|30|A|
|**IF110**|TC= 110°C<br>13|13|A|
|**ICM**|TC = 25°C, 1ms<br>150|150|A|
|~~oe~~||||
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 5ΩI|ICM=   60|A|
|**(RBSOA)**|Clamped Inductive Load                                    @|Clamped Inductive Load                                    @≤VCES||
|**PC**|TC= 25°C|220|W|
|**TJ**|-55 ... +150|-55 ... +150|°C|
|**TJM**|150|150|°C|
|**Tstg**|-55 ... +150|-55 ... +150|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s|300|°C|
|**TSOLD**|Plastic Body for 10 seconds|260|°C|
|**Md**|Mounting Torque (TO-220 & TO-247)                  1.13/10               Nm/lb.in.|Mounting Torque (TO-220 & TO-247)                  1.13/10               Nm/lb.in.||
|**Weight**|TO-263<br>TO-220|2.5<br>3.0|g<br>g|
||TO-247|6.0                            g|6.0                            g|



|(T= 25°C Unless Otherwise Specified)**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|
|**VGE(th)**<br>IC= 250μA, VCE= VGE<br>3.0                           5.5|3.0                           5.5|3.0                           5.5<br>V|
|**ICES**<br>VCE= VCES, VGE= 0V<br>TJ= 125°C<br>300|25<br>300|25μA<br>300μA|
|**IGES**<br>VCE= 0V, VGE= ± 20V|±100  nA|±100  nA|
|**VCE(sat)**<br>IC= 20A, VGE= 15V, Note 1<br>2.6          3.0     V<br>TJ= 125°C                            1.8                    V|2.6          3.0     V<br>= 125°C                            1.8                    V|2.6          3.0     V<br>= 125°C                            1.8                    V|



## **TO-220AB (IXGP)** 

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**----- Start of picture text -----**<br>
G  a<br>C E  C (Tab)<br>G<br>C<br>E  C (Tab)<br>**----- End of picture text -----**<br>


## **TO-247 (IXGH)** 

G  = Gate D       =  Collector S  = Emitter Tab   =  Collector 

## **Features** 

Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages 

## **Advantages** 

High Power Density Low Gate Drive Requirement 

## **Applications** 

High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 

© 2011 IXYS CORPORATION, All Rights Reserved 

DS100142B(05/11) 

**IXGA30N60C3C1  IXGP30N60C3C1 IXGH30N60C3C1** 

|**Symbol** **Test**|**Conditions**<br>|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||
|---|---|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>||**Min.**|**Typ.**|**Max.**||
|**gfs**|IC= 20A, VCE= 10V, Note 1|9|16||S|
|**Cies**|||1075||pF|
|**Coes**|VCE= 25V, VGE= 0V, f = 1MHz||196||pF|
|**Cres**|||29||pF|
|**Qg**|||38||nC|
|**Qge**|IC= 20A, VGE= 15V, VCE= 0.5 • VCES||8||nC|
|**Qgc**|||17||nC|
|**td(on)**|||17||ns|
|**tri**|**Inductive Load, TJ = 25°C**||20||ns|
|**Eon**|IC= 20A, VGE= 15V||0.12||mJ|
|**td(off)**|VCE= 300V, RG= 5Ω||42|75|ns|
|**t**fi|Note 2||47||ns|
|**Eoff**|||0.09|0.18|mJ|
|**td(on)**|||16||ns|
|**t**ri|**Inductive Load, TJ = 125°C**||21||ns|
|**Eon**|IC= 20A, VGE= 15V||0.16||mJ|
|**td(off)**|VCE= 300V, RG= 5Ω||70||ns|
|**t**fi|Note 2||90||ns|
|**Eoff**|||0.33||mJ|
|**RthJC**||||0.56|°C/W|
|**RthCS**|TO-220||0.50||°C/W|
||TO-247||0.21||°C/W|



## **Reverse Diode (SiC)** 

|**Symbol** **Test Conditions**<br>**Characteristic Values**<br> <br>|**Symbol** **Test Conditions**<br>**Characteristic Values**<br> <br>|**Symbol** **Test Conditions**<br>**Characteristic Values**<br> <br>|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**VF**IF= 10A, VGE= 0V, Note 1<br>TJ= 125°C|1.65<br>1.80|2.10       V<br>V|
|**RthJC**||1.10  °C/W|



Notes 

1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

2.  Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. 

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

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TO-263 (IXGA) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
       Pins:<br>1 - Gate<br>2, 4 - Collector<br>3 - Emitter<br>**----- End of picture text -----**<br>


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TO-220 (IXGP) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Pins:  1 - Gate  2, 4 - Collector<br>3 - Emitter<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 TO-247 Outline Dim.  Millimeter  Inches<br>A r Min.  Max.  Min.  Max.<br>eth A  4.7  5.3  .185  .209<br>A1 2.2  2.54  .087  .102<br>Heat ° A2 2.2  2.6  .059  .098<br>b  1.0  1.4  .040  .055<br>∅ P<br>D | 1       2       3 " b1 1.65  2.13  .065  .084<br>b2 2.87  3.12  .113  .123<br>Ly C  .4  .8  .016  .031<br>L D  20.80  21.46  .819  .845<br>E  15.75  16.26  .610  .640<br>I e  5.20  5.72  0.205 0.225<br>L  19.81  20.32  .780  .800<br>L1  4.50  .177<br>v1 ee I e  mo t t e ∅P  3.55  3.65  .140  .144<br>Q  5.89  6.40  0.232 0.252<br>Pins:  1 - Gate  2 - Collector<br>3 - Emitter  R  4.32  5.49  .170  .216<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION, All Rights Reserved 

**IXGA30N60C3C1  IXGP30N60C3C1 IXGH30N60C3C1** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>40 180<br>35 V GE = 15V13V 160 VGE = 15V<br>140<br>30<br>11V<br>120 13V<br>25<br>100<br>20<br>80 11V<br>9V<br>15<br>60<br>10<br>40 9V<br>5 7V 20<br>7V<br>0 0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 10 12 14 16 18 20<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>40 1.1<br>VGE = 15V<br>35             13V VGE = 15V<br>            11V  1.0<br>30 I C = 40A<br>0.9<br>25 9V<br>20 0.8<br>15 I  C  = 20A<br>0.7<br>10<br>0.6 I  C = 10A<br>5 7V<br>0 0.5<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 100 125 150<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance<br>5.5 70<br>TJ  = 25ºC  60<br>5.0<br>50<br>4.5<br>I  C = 40A 40<br>4.0 T J = 125ºC<br>           25ºC<br>20A 30          - 40ºC<br>3.5<br>20<br>10A<br>3.0<br>10<br>2.5 0<br>7 8 9 10 11 12 13 14 15 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC IC -<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts<br>Amperes<br>CE<br>V  -<br>IC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance<br>24<br>TJ = - 40ºC<br>20<br>25ºC<br>16<br>125ºC<br>12<br>8<br>4<br>0<br>0 10 20 30 40 50 60 70 80<br>IC - Amperes<br>Siemens<br> -<br> f s<br>g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Gate Charge<br>16<br>14  VCE = 300V<br> I  C  = 20A<br>12  I  G  = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br>


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Fig. 9. Capacitance<br>**----- End of picture text -----**<br>


**Fig. 10. Reverse-Bias Safe Operating Area** 

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10,000 70<br>f = 1 MHz<br>60<br>Cies 50<br>1,000<br>40<br>30<br>100 C oes<br>20<br>TJ = 125ºC<br>RG = 5Ω<br>10<br>dv / dt < 10V / ns<br>Cres<br>10 0<br>0 5 10 15 20 25 30 35 40 100 150 200 250 300 350 400 450 500 550 600 650<br>VCE - Volts VCE - Volts<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 11. Maximum Transient Thermal Impedance for IGBT** 

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1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION, All Rights Reserved 

**IXGA30N60C3C1  IXGP30N60C3C1 IXGH30N60C3C1** 

**Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
0.9 0.8<br>0.8 E off      E on  - - - - 0.7<br>TJ = 125 º C ,  VGE = 15V<br>0.7 VCE = 300V         0.6<br>I  C = 40A<br>0.6 0.5<br>0.5 0.4<br>0.4 0.3<br>0.3 0.2<br>I  C  = 20A<br>0.2 0.1<br>0.1 0<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br>Fig. 14. Inductive Switching Energy Loss vs.<br> Junction Temperature<br>0.8 0.8<br>0.7 E off    E on - - - - 0.7<br>RG = 5Ω ,  VGE = 15V<br>0.6 VCE = 300V       0.6<br>0.5 0.5<br>I C = 40A<br>0.4 0.4<br>0.3 0.3<br>0.2 I  C  = 20A 0.2<br>0.1 0.1<br>0 0<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


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Fig. 13. Inductive Switching Energy Loss vs.<br> Collector Current<br>0.6 0.6<br>Eoff     Eon - - - -<br>0.5 R G  = 5Ω ,   V GE  = 15V 0.5<br>VCE = 300V<br>0.4 TJ = 125ºC 0.4<br>0.3 0.3<br>TJ = 25ºC<br>0.2 0.2<br>0.1 0.1<br>0 0<br>10 15 20 25 30 35 40<br>IC - Amperes<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
180 140<br>t  f i t d(off) - - - -<br>160  TJ = 125 º C,  VGE = 15V 120<br> VCE = 300V<br>140 100<br>I C = 40A<br>120 80<br>I C = 20A<br>100 60<br>80 40<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br> d(off)t<br> - Nanoseconds<br>t f i  - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 16. Inductive Turn-off Switching Times vs. Collector Current** 

**Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
180 110 160 90<br>160  t  f i t d(off) - - - - 100 140  t f i td(off) - - - -  80<br> R G  = 5Ω ,  V GE  = 15V  RG = 5Ω ,  VGE = 15V<br>140  V CE  = 300V            90 120  VCE = 300V              70<br>120 80<br>100 T J  = 125ºC 70 100 60<br>I C = 40A, 20A<br>80 60 80 50<br>60 50<br>60 40<br>40 40<br>TJ = 25 º C 40 30<br>20 30<br>0 20 20 20<br>10 15 20 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125<br>IC - Amperes TJ - Degrees Centigrade<br> - Nanoseconds  d(off)t  - Nanoseconds  d(off)t<br>t f i tf i<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

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**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs.<br> Gate Resistance  Collector Current<br>90 30 60 24<br>80  t  r i t d(on) - - - - 28  t  r i t d(on) - - - -<br> TJ = 125 º C,  VGE = 15V 50  R G  = 5Ω ,  V GE  = 15V 22<br>70  VCE = 300V   I C = 40A 26  VCE = 300V  TJ = 125ºC<br>40 20<br>60 24<br>50 22 30 18<br>TJ = 25 º C<br>40 20<br>20 16<br>30 18<br>I  C  = 20A 10 14<br>20 16<br>10 14 0 12<br>4 6 8 10 12 14 16 18 20 10 15 20 25 30 35 40<br>RG - Ohms IC - Amperes<br> - Nanoseconds  d(on)t  - Nanoseconds  d(on)t<br>t r i tr i<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature** 

**Fig. 21. Forward Current vs. Forward Voltage** 

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**----- Start of picture text -----**<br>
75 21 20<br> t  r i t d(on) - - - -<br>65  R G  = 5Ω ,  V GE  = 15V 20 16<br> VCE = 300V       TJ = 25ºC<br>55 I  C  = 40A 19 TJ = 125ºC<br>12<br>45 18<br>8<br>35 17<br>I C = 20A<br>4<br>25 16<br>15 15 0<br>25 35 45 55 65 75 85 95 105 115 125 0 0.5 1 1.5 2 2.5 3<br>TJ - Degrees Centigrade VF - Volts<br> d(on)t<br> - Amperes<br> - Nanoseconds IF<br>t r i<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 22. Maximum Transient Thermal Impedance for Diode** 

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**----- Start of picture text -----**<br>
10<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION, All Rights Reserved 

IXYS REF: G_30N60C3C1(4D)05-02-11-A 



## Links

- [View this product on Novapart](https://novapart.co/products/IXGH30N60C3C1/silicon-carbide-igbt-single-transistor-60-a-3-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixgh30n60c3c1/igbt-600v-30a-to-247/dp/1829731)
---

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