# IGBT, 40 A, 2.5 V, 180 W, 1.2 kV, TO-247AD, 3 Pins

![Product image](https://novapart.co/image/farnell:1829738/)

**URL**: https://novapart.co/products/IXGH20N120A3/igbt-40-a-25-v-180-w-12-kv-to-247ad-3-pins
**SKU**: IXGH20N120A3
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.3300
**Stock**: 10+

## Description

DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3Pins;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 180W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1829738/)

## **GenX3[TM] 1200V IGBTs** 

Ultra-Low Vsat PT IGBTs for up to 3  kHz Switching 

**IXGA20N120A3 IXGP20N120A3 IXGH20N120A3** 

**V =   1200V** CES **I =   20A** C110 **V ≤ 2.5V** CE(sat) 

## **TO-263 AA (IXGA)** 

**==> picture [14 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>E<br>**----- End of picture text -----**<br>


C (Tab) 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VCES**<br>TJ = 25°C to 150°C<br>1200<br>V<br>**VCGR**<br>TJ = 25°C to 150°C, RGE= 1MΩ<br>1200<br>V<br>**VGES**<br>Continuous<br>±20<br>V<br>**VGEM**<br>Transient<br>±30<br>V<br>**IC25**<br>TC = 25°C<br>40<br>A<br>G<br>C E<br>**TO-220AB (IXGP)**<br>C (Tab)<br>~~n.d~~|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**IC110**<br>**ICM**|TC = 110°C<br>TC = 25°C, 1ms|20<br>120|A<br>A|**TO-247 (IXGH)**||||||||
|**SSOA**|VGE= 15V, TJ= 125°C, RG= 10Ω|ICM= 40|A|||||||||
|**(RBSOA)**|Clamped Inductive Load                                      @V|Clamped Inductive Load                                      @VCE**≤**960                     V|960                     V|||||||||
|**PC**|TC = 25°C|180|W|G||||||||
|**TJ**<br>**TJM**||-55 ... +150<br>150|°C<br>°C|C||E||||C (Tab)||
|**Tstg**||-55 ... +150|°C|G = Gate|||||C     = Collector|C     = Collector||
|**Md**|Mounting Torque (TO-247 & TO-220)|1.13/10|Nm/lb.in.|E = Emitter|||||Tab  = Collector|||
|**FC**|Mounting Force   (TO-263)                         10..65 / 2.2..14.6|Mounting Force   (TO-263)                         10..65 / 2.2..14.6|N/lb.|||||||||
|**TL**Maximum Lead Temperature for Soldering|Maximum Lead Temperature for Soldering|300|°C|||||||||
|**TSOLD**1.6mm (0.062 in.) from Case for 10s                               260|1.6mm (0.062 in.) from Case for 10s                               260|1.6mm (0.062 in.) from Case for 10s                               260|°C|**Features**||||||||
|**Weight**|TO-263|2.5|g|||||||||
||TO-220|3.0|g|Optimized for Low Conduction Losses||Optimized for Low Conduction Losses|||Optimized for Low Conduction Losses|Optimized for Low Conduction Losses||
||TO-247|6.0                           g|6.0                           g|International Standard Packages||||International Standard Packages|||International Standard Packages|



Optimized for Low Conduction Losses International Standard Packages 

## **Advantages** 

High Power Density Low Gate Drive Requirement 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|**Min.        Typ.      Max.**|
|**BVCES**<br>IC<br>= 250μA, VGE= 0V<br>1200|~~—~~|V|
|**VGE(th)**<br>IC<br>= 250μA, VCE= VGE<br>2.5<br>5.0|5.0<br>~~—~~|5.0<br>V|
|**ICES**<br>VCE = VCES, VGE= 0V<br>25<br>TJ= 125°C<br>1|25<br>1<br>~~ss~~|25<br>μA<br>1<br>mA<br>~~ss~~|
|**IGES**<br>VCE = 0V, VGE=±20V<br>±|±<br>~~ss~~<br>~~—~~|±100      nA<br>~~ss~~|
|**VCE(sat)**<br>IC= 20A, VGE= 15V, Note 1                                            2.3        2.5        V<br>TJ= 125°C                          2.5|= 15V, Note 1                                            2.3        2.5        V<br>C                          2.5<br>~~—~~|= 15V, Note 1                                            2.3        2.5        V<br>V|



## **Applications** 

Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits 

DS100046A(11/09) 

© 2009 IXYS CORPORATION, All Rights Reserved 

## **IXGA20N120A3   IXGP20N120A3 IXGH20N120A3** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**<br>~~||~~|**Min.        Typ.        Max.**|
|**gfs**<br>IC= 20A, VCE= 10V,  Note 1<br>7               12|7               12<br>~~||~~|S|
|**Cies**<br>1075|1075<br>~~||~~|pF|
|**Cies**<br>1075<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz<br>80<br>**Cres**<br>27|1075<br>80<br>27|pF<br>pF<br>pF|
|**Qg**<br>50<br>**Qge**<br>IC= 20A, VGE= 15V, VCE= 0.5**•**VCES<br>7.3<br>**Qgc**<br>23|50<br>7.3<br>23|nC<br>nC<br>nC|
|**td(on)**<br>16<br>**tri**<br>44<br>**Eon**<br>2.85<br>**td(off)**<br>290<br>**tfi**<br>715<br>**Eoff**<br>6.47<br>**Inductive Load, TJ = 25°C**<br>IC= 20A, VGE= 15V<br>VCE= 960V, RG= 10Ω<br>Note 2|16<br>44<br>2.85<br>290<br>715<br>6.47|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**off**<br>**td(on)**<br>16<br>**tri**<br>50<br>**Eon**<br>5.53<br>**td(off)**<br>310<br>**tfi**<br>1220<br>**Eoff**<br>10.10<br>**R**<br>**Inductive Load, TJ = 125°C**<br>IC= 20A, VGE= 15V<br>VCE= 960V, RG= 10Ω<br>Note 2|16<br>50<br>5.53<br>310<br>1220<br>10.10<br>0.69|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ<br>0.69°C/W|
|**RthJC**<br>**RthCK**TO-220<br>0.50<br>TO-247                                                                            0.21|0.69<br>0.50°<br>TO-247                                                                            0.21|0.69°C/W<br>°C/W<br>TO-247                                                                            0.21°C/W|



## **TO-247 (IXGH) AD Outline** 

**==> picture [50 x 48] intentionally omitted <==**

**----- Start of picture text -----**<br>
A 1 l  = Gate kc<br>2 = Coll e ctor<br>3 = Em it ter<br>Tab = Collector<br>**----- End of picture text -----**<br>


## **TO-220 (IXGP) Outline** 

Notes: 

1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

2.  Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. 

## **TO-263 (IXGA) Outline** 

**==> picture [109 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Collector<br>3 - Emitter 4 - Collector<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 = Gate<br>2 = Collector<br>3 = Emitter<br>Tab = Collector<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXGA20N120A3   IXGP20N120A3 IXGH20N120A3** 

**==> picture [263 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>40<br>V GE = 15V<br>35             13V<br>            11V<br>30<br>25<br>9V<br>20<br>15<br>7V<br>10<br>5<br>5V<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>140<br>V GE = 15V<br>120<br>100<br>13V<br>80<br>11V<br>60<br>40 9V<br>20<br>7V<br>0<br>0 4 8 12 16 20 24 28 32<br>VCE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


**Fig. 4. Dependence of VCE(sat) on Junction Temperature** 

**==> picture [529 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 1.8<br>VGE = 15V<br>35             13V VGE = 15V<br>            11V  1.6 I  C  = 40A<br>30<br>1.4<br>25<br>9V<br>20 1.2<br>I C = 20A<br>15<br>7V 1.0<br>10<br>0.8<br>5 5V I C = 10A<br>0 0.6<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 -50 -25 0 25 50 75 100 125 150<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance<br>7.5 45<br>6.5 TJ  = 25ºC  40            2TJ  = - 40ºC 5ºC<br>35<br>         125ºC<br>5.5 30<br>25<br>4.5 I C = 40A<br>20<br>3.5 20A  15<br>10A  10<br>2.5<br>5<br>1.5 0<br>5 6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGE - Volts VGE - Volts<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts Amperes<br>CE<br>V  -<br>IC<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

## **IXGA20N120A3   IXGP20N120A3 IXGH20N120A3** 

**==> picture [536 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>16 16<br>TJ = - 40ºC<br>14 14  V CE = 600V<br> I C = 20A<br>12 25ºC 12  I G = 10 mA<br>10 125ºC 10<br>8 8<br>6 6<br>4 4<br>2 2<br>0 0<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 50<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 45<br>f = 1MHz  40<br>35<br>C ies<br>1,000 30<br>25<br>20<br>Coes<br>100 15<br>T J = 125ºC<br>10<br>RG = 10Ω<br>dv / dt < 10V / ns<br>Cres 5<br>10 0<br>0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1200<br>VCE - Volts VCE - Volts<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**==> picture [536 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 11. Maximum Transient Thermal Impedance<br>1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXGA20N120A3   IXGP20N120A3 IXGH20N120A3** 

**Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance** 

**==> picture [254 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
26 20<br>24 E off                 E on  - - - - 18<br>22 TJ = 125ºC ,  VGE = 15V 16<br>V CE = 960V<br>20 14<br>18 I  C = 40A 12<br>16 10<br>14 8<br>I  C  = 20A<br>12 6<br>10 4<br>8 2<br>10 15 20 25 30 35 40 45 50<br>RG - Ohms<br>Fig. 14. Inductive Switching Energy Loss<br> vs. Junction Temperature<br>22 11<br>20 E off                E on - - - - 10<br>18 RG = 10Ω ,  VGE = 15V 9<br>VCE = 960V<br>16 8<br>14 7<br>I C = 40A<br>12 6<br>10 5<br>8 4<br>I C = 20A<br>6 3<br>4 2<br>2 1<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 16. Inductive Turn-off Switching Times vs. Collector Current** 

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**----- Start of picture text -----**<br>
1400 360<br>1300 t f i t d(off) - - - - 350<br>RG = 10Ω ,  VGE = 15V<br>1200 VCE = 960V            340<br>1100 330<br>TJ = 125ºC<br>1000 320<br>900 310<br>800 TJ = 25ºC 300<br>700 290<br>600 280<br>20 22 24 26 28 30 32 34 36 38 40<br>IC - Amperes<br>t<br> - Nanoseconds d(off)<br>t f i<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**==> picture [160 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Inductive Switching Energy Loss<br> vs. Collector Current<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
24 12<br>22 E off                E on - - - - 11<br>20 RG = 10Ω ,   VGE = 15V 10<br>V CE  = 960V<br>18 9<br>16 8<br>T J  = 125ºC<br>14 7<br>12 6<br>10 TJ = 25ºC 5<br>8 4<br>6 3<br>4 2<br>20 22 24 26 28 30 32 34 36 38 40<br>IC - Amperes<br>E<br> - MilliJoules on<br>off  - MilliJoules<br>E<br>**----- End of picture text -----**<br>


**Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance** 

**==> picture [255 x 390] intentionally omitted <==**

**----- Start of picture text -----**<br>
1700 700<br>1600 650<br>t f i td(off) - - - -<br>1500 600<br>TJ = 125ºC,  VGE = 15V<br>1400 V CE  = 960V        550<br>I C = 20A<br>1300 500<br>1200 450<br>1100 400<br>1000 350<br>900 I  C = 40A 300<br>800 250<br>700 200<br>600 150<br>10 15 20 25 30 35 40 45 50<br>RG - Ohms<br>Fig. 17. Inductive Turn-off Switching Times<br> vs. Junction Temperature<br>1400 350<br>1300 t f i td(off) - - - -  340<br>RG = 10Ω ,  VGE = 15V<br>1200 V CE  = 960V              330<br>1100 320<br>1000 310<br>I C = 40A<br>900 300<br>I C = 20A<br>800 290<br>700 280<br>600 270<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanoseconds  d(off)t<br>t f<br> - Nanoseconds<br>t<br> - Nanoseconds d(off)<br>f i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

## **IXGA20N120A3   IXGP20N120A3 IXGH20N120A3** 

**Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance** 

**Fig. 19. Inductive Turn-on Switching Times vs. Collector Current** 

**==> picture [526 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 55 160 23<br>180 t r i t d(on) - - - -  50 140 t r i td(on) - - - -  22<br>160 TJ = 125 º C,  VGE = 15V 45 R G  = 10Ω ,  V GE  = 15V<br>VCE = 960V   120 V CE  = 960V  21<br>140 40<br>100 20<br>120 35<br>100 I C = 40A 30 80 T J  = 125ºC 19<br>TJ = 25 º C<br>80 25<br>I C = 20A 60 18<br>60 20<br>40 17<br>40 15<br>20 16<br>20 10<br>0 5 0 15<br>10 15 20 25 30 35 40 45 50 20 22 24 26 28 30 32 34 36 38 40<br>RG - Ohms IC - Amperes<br>Fig. 20. Inductive Turn-on Switching Times<br> vs. Junction Temperature<br>160 28<br>140 t r i td(on) - - - - 26<br>RG = 10Ω ,  VGE = 15V<br>120 VCE = 960V       24<br>100 I  C  = 40A 22<br>80 20<br>60 18<br>40 I  C  = 20A 16<br>20 14<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanoseconds  d(on)t  - Nanoseconds  d(on)t<br>t r i  - Nanoseconds tr i  - Nanoseconds<br>- Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: G_20N120A3(4L)10-01-08 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXGH20N120A3/igbt-40-a-25-v-180-w-12-kv-to-247ad-3-pins)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixgh20n120a3/igbt-1200v-20a-to-247/dp/1829738)
---

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