# Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-263, 3 Pins

![Product image](https://novapart.co/image/farnell:1829729/)

**URL**: https://novapart.co/products/IXGA30N60C3C1/silicon-carbide-igbt-single-transistor-60-a-3-v
**SKU**: IXGA30N60C3C1
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €6.5300
**Stock**: 10+

## Description

DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No. of Pins:3Pins; Operat

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 220W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1829729/)

## Preliminary Technical Information 

**GenX3[TM ] 600V IGBT w/ SiC Anti-Parallel Diode** 

**IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1** 

**V = 600V** CES **I =   30A** C110 **V ≤ 3.0V** CE(sat) **t = 47ns** fi(typ) 

**High Speed PT IGBTs for 40 - 100kHz Switching** 

**TO-263 (IXGA)** 

**==> picture [26 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>E<br>**----- End of picture text -----**<br>


C (TAB) 

|**Symbol      Test Conditions**|**Symbol      Test Conditions**|**Maximum Ratings**|||||||
|---|---|---|---|---|---|---|---|---|
|**VCES**|TC= 25°C to 150°C                                                     600|= 25°C to 150°C                                                     600|V|**TO-220 (IXGP)**|||||
|**VCGR**<br>TJ= 25°C to 150°C, RGE= 1MΩ600<br>V<br>**VGES**<br>Continuous<br>± 20<br>V<br>**VGEM**<br>Transient<br>± 30<br>V<br>**IC25**<br>TC= 25°C                                                                     60<br>A<br>G<br>E<br>C<br>C (TAB)<br>~~eB~~|||||||||
|**IC110**|TC= 110°C<br>30|30|A||||||
|**IF110**|TC= 110°C<br>13|13|A||||||
|**ICM**|TC = 25°C, 1ms<br>150|150|A|**TO-247 (IXGH)**|||||
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 5ΩI|ICM=   60|A||||||
|**(RBSOA)**|Clamped Inductive Load                                    @|Clamped Inductive Load                                    @≤VCES|||||||
||||||||||
|**PC**<br>**TJ**|TC= 25°C<br>-55 ... +150|220<br>-55 ... +150|W<br>°C|G<br>C E|C E||C (TAB)||
|**TJM**|150|150|°C|G = Gate||C      =  Collector|C      =  Collector|C      =  Collector|
|**Tstg**|-55 ... +150|-55 ... +150|°C|E = Emitter||E = Emitter<br>TAB  =  Collector|TAB  =  Collector|TAB  =  Collector|
|**TL**<br>**TSOLD**|1.6mm (0.062 in.) from Case for 10s<br>Plastic Body for 10 seconds|300<br>260|°C<br>°C|**Features**|||||
|**Md**|Mounting Torque (TO-220 & TO-247)                  1.13/10               Nm/lb.in.|Mounting Torque (TO-220 & TO-247)                  1.13/10               Nm/lb.in.||Optimized for Low Switching Losses|||Optimized for Low Switching Losses|Optimized for Low Switching Losses|
|**Weight**|TO-263<br>TO-220|2.5<br>3.0|g<br>g|Square RBSOA<br>Anti-Parallel Schottky Diode||||Anti-Parallel Schottky Diode|
||TO-247|6.0                            g|6.0                            g|International Standard Packages||||International Standard Packages|



G = Gate C      =  Collector E = Emitter TAB  =  Collector 

Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Packages 

## **Advantages** 

|(T= 25°C Unless Otherwise Specified)**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|
|**VGE(th)**<br>IC= 250μA, VCE= VGE<br>3.5                           5.5|3.5                           5.5|3.5                           5.5<br>V|
|**ICES**<br>VCE= VCES, VGE= 0V<br>TJ= 125°C<br>300|25<br>300|25μA<br>300μA|
|**IGES**<br>VCE= 0V, VGE= ± 20V|±100  nA|±100  nA|
|**VCE(sat)**<br>IC= 20A, VGE= 15V, Note 1<br>2.6          3.0     V<br>TJ= 125°C                            1.8                    V|2.6          3.0     V<br>= 125°C                            1.8                    V|2.6          3.0     V<br>= 125°C                            1.8                    V|



High Power Density Low Gate Drive Requirement 

## **Applications** 

High Frequency Power Inverters UPS 

Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 

© 2009 IXYS CORPORATION, All Rights Reserved 

DS100142A(06/09) 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

|**Symbol** **Test Conditions**<br>**Characteristic Values**|**Symbol** **Test Conditions**<br>**Characteristic Values**|**Symbol** **Test Conditions**<br>**Characteristic Values**|**Symbol** **Test Conditions**<br>**Characteristic Values**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**gfs**<br>IC= 20A, VCE= 10V, Note 1<br>9||16|S|
|||||
|**Cies**<br>**Coes**<br>**Cres**|<br>VCE= 25V, VGE= 0V, f = 1MHz<br> <br>|1075<br>196<br>29|pF<br>pF<br>pF|
|||||
|**Qg**<br>**Qge**<br>**Qgc**|<br>IC= 20A, VGE= 15V, VCE= 0.5 • VCES<br> <br>|38<br>8<br>17|nC<br>nC<br>nC|
|**td(on)**<br> <br>**tri**<br> <br>**Eon**<br> <br>**td(off)**<br> <br>**t**fi<br> <br>**Eoff**<br> <br>**Inductive Load, TJ = 25°C**<br>IC= 20A, VGE= 15V<br>VCE= 300V, RG= 5Ω<br>Note 2||17<br>20<br>0.12<br>42<br>47<br>0.09|ns<br>ns<br>mJ<br>75       ns<br>ns<br>0.18       mJ|
|**td(on)**<br> <br>**t**ri<br> <br>**Eon**<br> <br>**td(off)**<br> <br>**t**fi<br> <br>**Eoff**<br> <br>**Inductive Load, TJ = 125°C**<br>IC= 20A, VGE= 15V<br>VCE= 300V, RG= 5Ω<br>Note 2||16<br>21<br>0.16<br>70<br>90<br>0.33|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|**RthJC**<br>**RthCS**<br>TO-220<br>TO-247||<br>0.50<br>0.21|0.56  °C/W<br>°C/W<br>°C/W|



|**Reverse Diode (SiC)**<br>**Symbol** **Test Conditions**<br>**Characteristic Values**<br> <br>|**Reverse Diode (SiC)**<br>**Symbol** **Test Conditions**<br>**Characteristic Values**<br> <br>|**Reverse Diode (SiC)**<br>**Symbol** **Test Conditions**<br>**Characteristic Values**<br> <br>|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**VF**IF= 10A, VGE= 0V, Note 1<br>TJ= 125°C|1.65<br>1.80|2.10       V<br>V|
|**RthJC**||1.10  °C/W|



Notes 

1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

2.  Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

## **TO-263 (IXGA) Outline** 

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TO-220 (IXGP) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Pins:  1 - Gate  2 - Drain<br>3 - Source  4 - Drain<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
  TO-247 (IXTH) Outline Dim.  Millimeter  Inches<br>A r Min.  Max.  Min.  Max.<br>oat A  4.7  5.3  .185  .209<br>A1 2.2  2.54  .087  .102<br>HA oa? s A2 2.2  2.6  .059  .098<br>b  1.0  1.4  .040  .055<br>∅ P<br>D | 1       2       3 " b1 1.65  2.13  .065  .084<br>b2 2.87  3.12  .113  .123<br>Ly C  .4  .8  .016  .031<br>L D  20.80  21.46  .819  .845<br>E  15.75  16.26  .610  .640<br>| e  5.20  5.72  0.205 0.225<br>L  19.81  20.32  .780  .800<br>oe L1  4.50  .177<br>e  ∅P  3.55  3.65  .140  .144<br>Terminals: 1 - Gate  2 - Drain  Q  5.89  6.40  0.232 0.252<br>R  4.32  5.49  .170  .216<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>40 180<br>35 V GE = 15V13V 160 VGE = 15V<br>140<br>30<br>11V<br>120 13V<br>25<br>100<br>20<br>80 11V<br>9V<br>15<br>60<br>10 40 9V<br>5 7V 20<br>7V<br>0 0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 10 12 14 16 18 20<br>VCE - Volts VCE - Volts<br> - AmperesIC AmperesIC -<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ 125ºC** 

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Fig. 4. Dependence of VCE(sat) on<br>Junction Temperature<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
40 1.1<br>VGE = 15V<br>35             13V VGE = 15V<br>            11V  1.0<br>30 I  C = 40A<br>0.9<br>25 9V<br>20 0.8<br>15 I C = 20A<br>0.7<br>10<br>0.6 I C = 10A<br>5 7V<br>0 0.5<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 100 125 150<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance<br>5.5 70<br>TJ  = 25ºC  60<br>5.0<br>50<br>4.5<br>I  C = 40A 40<br>4.0 T J = 125ºC<br>           25ºC<br>20A 30          - 40ºC<br>3.5<br>20<br>10A<br>3.0<br>10<br>2.5 0<br>7 8 9 10 11 12 13 14 15 5 6 7 8 9 10 11<br>VGE - Volts VGE - Volts<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - Volts Amperes<br>VCE IC -<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

**==> picture [534 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>24 16<br>TJ = - 40ºC<br>14  VCE = 300V<br>20<br> I  C  = 20A<br>25ºC 12  I  G  = 10 mA<br>16<br>125ºC 10<br>12 8<br>6<br>8<br>4<br>4<br>2<br>0 0<br>0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>10,000 70<br>f = 1 MHz<br>60<br>Cies 50<br>1,000<br>40<br>30<br>100 C oes<br>20<br>TJ = 125ºC<br>RG = 5Ω<br>10 dV / dt < 10V / ns<br>Cres<br>10 0<br>0 5 10 15 20 25 30 35 40 100 150 200 250 300 350 400 450 500 550 600 650<br>VCE - Volts VCE - Volts<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 11. Maximum Transient Thermal Impedance for IGBT** 

**==> picture [522 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: G_30N60C3C1(4D)6-03-09 

## **IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

**Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance** 

**==> picture [254 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.9 0.8<br>0.8 E off      E on  - - - - 0.7<br>TJ = 125 º C ,  VGE = 15V<br>0.7 VCE = 300V         0.6<br>I  C = 40A<br>0.6 0.5<br>0.5 0.4<br>0.4 0.3<br>0.3 0.2<br>I  C  = 20A<br>0.2 0.1<br>0.1 0.0<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature** 

**==> picture [254 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.8 0.8<br>0.7 E off    E on - - - - 0.7<br>RG = 5Ω ,  VGE = 15V<br>0.6 VCE = 300V       0.6<br>0.5 0.5<br>I C = 40A<br>0.4 0.4<br>0.3 0.3<br>0.2 I  C  = 20A 0.2<br>0.1 0.1<br>0 0.0<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br>**----- End of picture text -----**<br>


**Fig. 16. Inductive Turn-off Switching Times vs. Collector Current** 

**==> picture [255 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
180 110<br>160  t  f i t d(off) - - - - 100<br> R G  = 5Ω ,  V GE  = 15V<br>140  V CE  = 300V            90<br>120 80<br>T J  = 125ºC<br>100 70<br>80 60<br>60 50<br>40 40<br>TJ = 25 º C<br>20 30<br>0 20<br>10 15 20 25 30 35 40<br>IC - Amperes<br> - Nanoseconds  d(off)t<br>t f i<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 13. Inductive Switching Energy Loss vs. Collector Current** 

**==> picture [256 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.6 0.6<br>Eoff     Eon - - - -<br>0.5 R G  = 5Ω ,   V GE  = 15V 0.5<br>VCE = 300V<br>0.4 TJ = 125ºC 0.4<br>0.3 0.3<br>TJ = 25ºC<br>0.2 0.2<br>0.1 0.1<br>0.0 0.0<br>10 15 20 25 30 35 40<br>IC - Amperes<br>Fig. 15. Inductive Turn-off<br>Switching Times vs. Gate Resistance<br>180 140<br>170 t  f i t d(off) - - - -  130<br>160  TJ = 125 º C,  VGE = 15V 120<br> VCE = 300V<br>150 110<br>140 100<br>130 90<br>I C = 40A<br>120 80<br>110 70<br>I C = 20A<br>100 60<br>90 50<br>80 40<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br>Fig. 17. Inductive Turn-off<br>Switching Times vs. Junction Temperature<br>160 90<br>140  t f i td(off) - - - -  80<br> RG = 5Ω ,  VGE = 15V<br>120  VCE = 300V              70<br>100 60<br>I C = 40A, 20A<br>80 50<br>60 40<br>40 30<br>20 20<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules<br> d(off)t<br> - Nanoseconds<br>t f i  - Nanoseconds<br> d(off)t<br> - Nanoseconds<br>f i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

**IXGA30N60C3C1    IXGP30N60C3C1 IXGH30N60C3C1** 

**==> picture [267 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 18. Inductive Turn-on<br>Switching Times vs. Gate Resistance<br>90 30<br>80  t  r i t d(on) - - - - 28<br> TJ = 125 º C,  VGE = 15V<br>70  VCE = 300V   I C = 40A 26<br>60 24<br>50 22<br>40 20<br>30 18<br>I  C  = 20A<br>20 16<br>10 14<br>4 6 8 10 12 14 16 18 20<br>RG - Ohms<br> - Nanoseconds  d(on)t<br>t r i<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 19. Inductive Turn-on Switching Times vs. Collector Current** 

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**----- Start of picture text -----**<br>
60 24<br> t  r i t d(on) - - - -<br>50  R G  = 5Ω ,  V GE  = 15V 22<br> V CE  = 300V  TJ = 125ºC<br>40 20<br>30 18<br>T J  = 25ºC<br>20 16<br>10 14<br>0 12<br>10 15 20 25 30 35 40<br>IC - Amperes<br> - Nanoseconds  d(on)t<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature** 

**Fig. 21. Forward Current vs. Forward Voltage** 

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**----- Start of picture text -----**<br>
75 21 20<br> t  r i t d(on) - - - -<br>65  R G  = 5Ω ,  V GE  = 15V 20 16<br> VCE = 300V       TJ = 25ºC<br>55 I  C  = 40A 19 TJ = 125ºC<br>12<br>45 18<br>8<br>35 17<br>I C = 20A<br>4<br>25 16<br>15 15 0<br>25 35 45 55 65 75 85 95 105 115 125 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2<br>TJ - Degrees Centigrade VF - Volts<br>Fig. 22. Maximum Transient Thermal Impedance for Diode<br>10.000<br>1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> d(on)t<br> - Amperes<br> - Nanoseconds IF<br>t r i<br> - Nanoseconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: G_30N60C3C1(4D)6-03-09 



## Links

- [View this product on Novapart](https://novapart.co/products/IXGA30N60C3C1/silicon-carbide-igbt-single-transistor-60-a-3-v)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixga30n60c3c1/igbt-600v-30a-to-263/dp/1829729)
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