# MOSFET, N-CH, 250V, 30A, TO-252

![Product image](https://novapart.co/image/farnell:3949070/)

**URL**: https://novapart.co/products/IXFY30N25X3./mosfet-n-ch-250v-30a-to-252
**SKU**: IXFY30N25X3.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.8400
**Stock**: 10+
**Lead Time**: 319 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.048ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949070/)

## **X3-Class HiPERFET[TM] Power MOSFET** 

## **IXFY30N25X3 IXFA30N25X3 IXFP30N25X3** 

**V =   250V DSS I =   30A D25 R  60m  DS(on)** 

N-Channel Enhancement Mode 

D G @ S 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>250<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>250<br>V<br>**VGSS**<br>Continuous<br>20<br>V<br>**VGSM**<br>Transient<br>30<br>V<br>~~TO~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>250<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>250<br>V<br>**VGSS**<br>Continuous<br>20<br>V<br>**VGSM**<br>Transient<br>30<br>V<br>~~TO~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>250<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>250<br>V<br>**VGSS**<br>Continuous<br>20<br>V<br>**VGSM**<br>Transient<br>30<br>V<br>~~TO~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25C to 150C<br>250<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>250<br>V<br>**VGSS**<br>Continuous<br>20<br>V<br>**VGSM**<br>Transient<br>30<br>V<br>~~TO~~|
|---|---|---|---|
|**ID25**|TC = 25C|30|A|
|**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>45<br>A<br>~~So~~||||
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C|15<br>300|A<br>mJ|
|**dv/dt**I<br>**PD**|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns<br>TC = 25C|150°C                                      50                   V/ns<br>170|150°C                                      50                   V/ns<br>W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**FC**|Mounting Force   (TO-263)                      10..65 / 2.2..14.6                   N/lb||Mounting Force   (TO-263)                      10..65 / 2.2..14.6                   N/lb|
|**Md**|Mounting Torque (TO-220)|1.13 / 10         Nm/lb.in||
|**Weight**|TO-252<br>0.35|0.35|g|
|TO-263|TO-263<br>2.50|2.50|g|
|TO-220|TO-220<br>3.00                        g|3.00                        g|3.00                        g|



|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>250<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 500μA<br>2.5 4.5      V<br>~~|~~<br>~~|~~<br>~~|~~|4.5      V<br>~~|~~<br>~~|~~<br>~~||~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~|~~<br>~~||~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>250<br>~~|~~|5<br>250<br>~~| |_~~|5A<br>250A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|48           60  m|48           60  m|



**==> picture [120 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-252<br>(IXFY)<br>G<br>   S<br>D (Tab)<br>TO-263<br>(IXFA)<br>G<br>S<br>S s<br>D (Tab)<br>TO-220<br>(IXFP)<br>G<br>D<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Packages 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100848E(11/19) 

© 2019 IXYS CORPORATION, All Rights Reserved. 

**IXFY30N25X3     IXFA30N25X3 IXFP30N25X3** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                    14|23|S|
|**RGi**<br>Gate Input Resistance<br>|1.8||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|1450<br>266<br>1|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|115<br>410|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 30(External)|16<br>24<br>77<br>20|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|21<br>6<br>6|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220|<br>0.50|0.73C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||30       A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||120       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 15A, -di/dt = 100A/μs<br>VR= 100V|82<br>290<br>7|ns<br>nC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXFY30N25X3     IXFA30N25X3 IXFP30N25X3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>30<br>VGS = 10V<br>              8V<br>25<br>7V<br>20<br>15<br>6V<br>10<br>5<br>5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>70<br>VGS = 10V<br>60 8V<br>50<br>7V<br>40<br>30<br>6V<br>20<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>30 3.2<br>VGS = 10V<br>             8V VGS = 10V<br>2.8<br>25 7V<br>2.4<br>20<br>I D = 30A<br>6V 2.0<br>15<br>1.6 I  D  = 15V<br>10<br>1.2<br>5V<br>5<br>0.8<br>4V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>3.5 1.2<br>VGS = 10V  BVDSS<br>3.0 1.1<br>TJ = 125 [o] C<br>2.5 1.0<br>2.0 0.9<br>T J  = 25 [o] C<br>1.5 0.8<br>VGS(th)<br>1.0 0.7<br>0.5 0.6<br>0 10 20 30 40 50 60 70 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved. 

## **IXFY30N25X3     IXFA30N25X3 IXFP30N25X3** 

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**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>35 40<br>35 VDS = 10V<br>30<br>30<br>25<br>25<br>20<br>20<br>15<br>15 TJ = 125 [o] C<br>           25 [o] C<br>10<br>10 - 40 [o] C<br>5 5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>45 140<br>40 VDS = 10V TJ = - 40 [o] C<br>120<br>35<br>100<br>30<br>25 [o] C<br>25 80<br>20 125 [o] C 60<br>15 T J  = 125 [o] C<br>40<br>10<br>T J  = 25 [o] C<br>20<br>5<br>0 0<br>0 5 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 10,000<br>9  V DS = 125V<br>8  I D = 15A 1,000 Ciss<br> I G = 10mA<br>7<br>6 100<br>Coss<br>5<br>4 10<br>Crss<br>3<br>2 1<br>1 f = 1 MHz<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 22 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFY30N25X3     IXFA30N25X3 IXFP30N25X3** 

**==> picture [537 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>3.5 100<br>RDS(on) Limit<br>3.0<br>10<br>2.5<br>2.0 100μs<br>1<br>1.5<br>1.0 1ms<br>0.1  TJ = 150 [o] C 10ms<br>DC<br>0.5  TC = 25 [o] C<br> Single Pulse<br>0.0 0.01<br>0 50 100 150 200 250 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Fig. 15. Maximum Transient Thermal Impedance** 

**==> picture [524 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved. 

IXYS REF: F_30N25X3(22-S202) 6-28-17 

**==> picture [242 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
IXFY30N25X3     IXFA30N25X3<br>                                       IXFP30N25X3<br>**----- End of picture text -----**<br>


**==> picture [517 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-252  Outline TO-263 Outline TO-220 Outline<br>  4 b3 E  L3 A  c2 E  C2A  E1 E oP A1A<br> L1  D1<br>D<br>ibe L4 m  1      2      3 e e bk  A2 A1 H lL 1 e 2 3  L2 A |  A1 H Li 4 POR D Q H1 A Tea D2<br>[Lo Tl  L1  L  b2 | G4] b  L3 EH LT [J D1<br>EY  e1  e1 e  b2  L2  c 1 - Gate2,4 - Drain Pe  0c S e e TT 0.43 [11.0] e A l E1<br> 0 3 - Source<br>OPTIONAL 5.55MIN 0.34 [8.7] EJECTOR A2<br>6.50MIN  A2 0.66 [16.6] PIN L1 L<br>  4 1 - Gate 0.20 [5.0] 0.12 [3.0]<br>6.40 2,4 - Drain<br>2.85MIN 3 - Source 0.10 [2.5] 0.06 [1.6] e e1 c  3X b3X b2<br>BOTTOMVIEW  2.28 | at 1.25MIN 1 - Gate<br>LAND PATTERN RECOMMENDATION 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFY30N25X3     IXFA30N25X3 IXFP30N25X3** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2019 IXYS CORPORATION, All Rights Reserved. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixfy30n25x3/mosfet-n-ch-250v-30a-to-252/dp/3949070)
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