# MOSFET, N-CH, 300V, 210A, PLUS247

![Product image](https://novapart.co/image/farnell:3949067/)

**URL**: https://novapart.co/products/IXFX210N30X3./mosfet-n-ch-300v-210a-plus247
**SKU**: IXFX210N30X3.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €17.5700
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:210A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 1.25kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PLUS247 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 210A |
| Drain Source On State Resistance | 0.0043ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949067/)

## **X3-Class HiPerFET[TM] Power MOSFET** 

|**X3-Class HiPerFET**|**X3-Class HiPerFET[TM]**|**IXFK210N30X3**|**IXFK210N30X3**|**IXFK210N30X3**||**VDSS**||**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|**=   300V**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Power MOSFET**||**IXFX210N30X3**||||**ID25**||**=   210A**||**=   210A**|**=   210A**|**=   210A**|||||||
|||||||**RDS(on)**||**   5.5m**||**5.5m**|**5.5m**|**5.5m**|||||||
|||||D|||||||||||||||
|N-Channel Enhancement Mode|||||||||||||||||||
|Avalanche Rated|Avalanche Rated|||G|||||||||||||||
|||||||**TO-264**|||||||||||||
|||||S||**(IXFK)**|||||||||||||
|**Symbol**<br>**Test Conditions**<br>**VDSS**<br>TJ = 25C to 150C<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>**VGSS**<br>Continuous<br>**VGSM**<br>Transient<br>**ID25**<br>TC = 25C<br>**IL(RMS)**<br>External Lead Current Limit<br>**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>**IA**<br>TC = 25C<br>~~So~~<br>~~Oo~~|||**Maximum Ratin**<br>300<br>300<br>20<br>30<br>210<br>160<br>650<br>105|**Maximum Ratings**|V<br>V<br>V<br>V<br>A<br>A<br>A<br>A|**PLUS247**<br>**(IXFX)**<br>G<br>D S<br>S<br>G<br>D<br>C~~Y~~||||||||Tab<br>Tab<br>:|||||
|**EAS**|TC = 25C||3||J||||||||||||||
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns||G  =  Gate<br>S  =  Source|||||D     =  Drain<br>Tab  =  Drain|||D     =  Drain<br>Tab  =  Drain||D     =  Drain<br>Tab  =  Drain|||
|**PD**|TC = 25C||1250||W||||||||||||||
|**TJ**|||-55 ... +150||C||||||||||||||
|**TJM**|||150||C||||||||||||||
|**Tstg**|||-55 ... +150||C||||||||||||||
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300||°C|**Features**|||||||||||||
|**TSOLD**<br>**Md**<br>**FC**|1.6 mm (0.062in.) from Case for 10s                              260<br>Mounting Torque  (TO-264)<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                   N/lb|1.6 mm (0.062in.) from Case for 10s                              260<br>1.13/10<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                   N/lb|1.6 mm (0.062in.) from Case for 10s                              260<br>1.13/10<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                   N/lb|°C<br>Nm/lb.in<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                   N/lb||International Standard Packages<br>Low RDS(ON)and QG<br>Avalanche Rated|||||||||||International Standard Packages|International Standard Packages|
|**Weight**|TO-264|10|10||g|Low Package Inductance|||||Low Package Inductance||||||||
||PLUS247|6|6|6|6g||||||||||||||



- International Standard Packages 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 3mA<br>300|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 8mA<br>2.5 4.5      V|4.5      V<br>~~|~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~|200   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>2.5  mA|25<br>2.5  mA<br>~~—~~|25A<br>2.5  mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|4.3         5.5  m<br>~~—~~<br>~~|~~|4.3         5.5  m|



- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 

DS100864B(11/19) 

© 2019 IXYS CORPORATION, All Rights Reserved 

**IXFK210N30X3 IXFX210N30X3** 

|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                              Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 60A, Note 1                           84|140|S|
|**RGi**<br>Gate Input Resistance<br>|2||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|24.2<br>3.1<br>7.7|nF<br>nF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|1100<br>4600|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|38<br>40<br>210<br>15|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|375<br>107<br>100|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.10C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||210      A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||840      A|
|**VSD**<br>IF= 100A, VGS= 0V, Note 1||1.4      V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 105A, -di/dt = 100A/μs<br>VR= 100V|190<br>1.4<br>15|ns<br>μC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXFK210N30X3 IXFX210N30X3** 

**==> picture [264 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>220<br>VGS = 10V<br>200<br>            8V<br>180<br>7V<br>160<br>140<br>120<br>6V<br>100<br>80<br>60<br>40<br>5V<br>20<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

**==> picture [253 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
900<br>VGS = 10V 9V<br>800<br>700<br>8V<br>600<br>500<br>400 7V<br>300<br>6V<br>200<br>100<br>5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [536 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 105A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>220 2.4<br>200 V           8VGS = 10V 2.2 VGS = 10V<br>7V<br>180<br>2.0<br>160<br>1.8<br>140 6V I D = 210A<br>120 1.6<br>I D = 105A<br>100 1.4<br>80<br>5V 1.2<br>60<br>1.0<br>40<br>0.8<br>20<br>4V<br>0 0.6<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.0 1.3<br>VGS = 10V<br>3.5 1.2<br>3.0 1.1 BVDSS<br>TJ = 125 [o] C<br>2.5 1.0<br>2.0 0.9<br>1.5 0.8<br>T J  = 25 [o] C<br>1.0 0.7 VGS(th)<br>0.5 0.6<br>0 100 200 300 400 500 600 700 800 900 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved 

## **IXFK210N30X3 IXFX210N30X3** 

**==> picture [265 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature<br>180<br>160<br>External Lead Current Limit<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Transconductance** 

**==> picture [256 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
400<br>TJ = - 40 [o] C<br>350 VDS = 10V<br>300<br>250 25 [o] C<br>200<br>125 [o] C<br>150<br>100<br>50<br>0<br>0 40 80 120 160 200 240 280<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 8. Input Admittance** 

**==> picture [255 x 399] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>240 VDS = 10V<br>200<br>160<br>120<br>TJ = 125 [o] C<br>          25 [o] C<br>80<br>- 40 [o] C<br>40<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br>Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>600<br>500<br>400<br>300<br>200<br>TJ = 125 [o] C<br>100<br>TJ = 25 [o] C<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**==> picture [535 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9  V DS = 150V C iss<br>8  I D = 105A 10,000<br> I G = 10mA<br>7<br>6 1,000<br>Coss<br>5<br>4 100 Crss<br>3<br>2 10<br>1 f = 1 MHz<br>0 1<br>0 50 100 150 200 250 300 350 400 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFK210N30X3 IXFX210N30X3** 

**==> picture [538 x 453] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>45 1000<br>RDS(on) Limit<br>40<br>25μs<br>35<br>100 100μs<br>30<br>External Lead<br> Current Limit<br>25<br>10<br>20<br>1ms<br>15<br>1<br>10  TJ = 150 [o] C 10ms<br>5  T C  = 25 [o] C    DC<br>Fig. 15. Maximum Transient Thermal Impedance  Single Pulse<br>10 0.1<br>0 50 100 150 200 250 300 1 10 100 1,0 00<br>V DS  - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>0.2 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_210N30X3 (29-S301) 11-08-17 

**IXFK210N30X3 IXFX210N30X3** 

**==> picture [182 x 488] intentionally omitted <==**

**----- Start of picture text -----**<br>
PLUS247 Outline<br>| A2 FeTE—Ayre tf EI<br>LTTri|mM ©~ i Lopg A<br>es Oe @O7<br>H ||<br>4<br>U1<br>Tt<br>L<br>Mb<br>ai A ope, o> pues hrel.<br>b4<br>1 - Gate<br>2,4 - Drain 2. Pin<br>3.<br>3 - Source<br>3.1<br>3.2<br>| | NOTE: 1.<br>TO-264 Outline<br>-— E-— fra<br>a<br>R] [HSyo][ Go] Q |<br>| = | a<br>q<br>7?<br>RI | r_@ |<br>is pit<br>|<br>L<br>c<br>a = y at PM 1 - Gate<br>2,4 - Drain<br>3 - Source<br>a oe<br>x2 EE] NOTE: Leads|and back heatsink are<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFK210N30X3 IXFX210N30X3** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2019 IXYS CORPORATION, All Rights Reserved 



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- [Supplier page](https://es.farnell.com/littelfuse/ixfx210n30x3/mosfet-n-ch-300v-210a-plus247/dp/3949067)
---

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