# Power MOSFET, N Channel, 650 V, 120 A, 0.024 ohm, PLUS247, Through Hole

![Product image](https://novapart.co/image/farnell:3930114/)

**URL**: https://novapart.co/products/IXFX120N65X2/power-mosfet-n-channel-650-v-120-a-0024-ohm
**SKU**: IXFX120N65X2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €15.1500
**Stock**: 10+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.25kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PLUS247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 0.024ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930114/)

## **X2-Class HiPerFET[TM] Power MOSFET** 

**V =    650V DSS I =    120A D25 R**  **24m**  **DS(on)** 

## **IXFK120N65X2 IXFX120N65X2** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

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D<br>TO-264<br>G<br>(IXFK)<br>S<br>G<br>D<br>gss Tab<br>S<br>**----- End of picture text -----**<br>


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||||||||||
|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Maximum Ratingss|Tab|
|S|
|VDSS|TJ|= 25C to 150C|650|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|650|V|PLUS247|
|(IXFX)|
|VGSS|Continuous| 30|V|
|VGSM|Transient| 40|V|
|ID25|TC|= 25C|120|A|
|I|Sse|DM|TC|= 25C, Pulse Width Limited by TJM|240|A|G|D|
|IA|TC|= 25C|15|A|S|Tab|
|EAS|TC|= 25C|3.5|J|
|PD|TC|= 25C|1250|W|G  =  Gate|D     =  Drain|
|S  =  Source|Tab  =  Drain|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      50                V/ns|
|TJ|-55 ... +150|C|
|TJM|150|C|Features|
|Tstg|-55 ... +150|C|
|TL|Maximum Lead Temperature for Soldering                    300|°C||International Standard Packages|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                              260|°C||Low QAvalanche RatedG|
|Md|Mounting Torque  (TO-264)|1.13/10|Nm/lb.in||Low Package Inductance|
|FC|Mounting Force   (PLUS247)                     20..120 /4.5..27                 N/lb|
|Weight|TO-264|10|g|Advantages|
|PLUS247|6                     g|

**----- End of picture text -----**<br>


- International Standard Packages 

- High Power Density 

- Easy to Mount 

- Space Savings 

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||||||
|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|
|(TJ = 25C Unless Otherwise Specified)|Min.        Typ.        Max.|
|BVDSS|VGS|= 0V, ID = 3mA                                       650|V|
|VGS(th)|VDS|= VGS, ID = 8mA                                       3.5|5.0|V|
|IGSS|VGS|=  30V, VDS = 0V|100|nA|
|IDSS|VDS|= VDSS, VGS = 0V|50|A|
|TJ = 125C|5   mA|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|24   m|

**----- End of picture text -----**<br>


## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

© 2020 IXYS CORPORATION, All Rights Reserved 

DS100685D(1/20) 

## **IXFK120N65X2 IXFX120N65X2** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                      46|76|S|
|**RGi**<br>Gate Input Resistance<br>|0.74||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|14<br>8700<br>5.5|nF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|455<br>1930|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|39<br>26<br>82<br>12|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|240<br>87<br>65|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.10C/W<br>C/W|



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## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**IS**<br>VGS = 0V|||120<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|||480     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|||1.4<br>V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br> <br>IF= 60A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V|220<br>2.3<br>21.0|ns<br>µC<br>A|
|||||



Note 1. Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFK120N65X2 IXFX120N65X2** 

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Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>120 280<br>VGS = 10V VGS = 10V<br>240 9V<br>100<br>8V<br>200<br>80 8V<br>7V 160<br>60<br>120<br>7V<br>40 6V<br>80<br>20 6V<br>40<br>5V 5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 60A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>120 3.4<br>VGS = 10V<br>8V 3.0 VGS  = 10V<br>100<br>2.6<br>7V<br>80<br>2.2 I D = 120A<br>60 6V 1.8<br>I D = 60A<br>1.4<br>40<br>1.0<br>5V<br>20<br>0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>3.5 1.3<br>VGS  = 10V  1.2<br>3.0<br>TJ = 125ºC 1.1 BVDSS<br>2.5<br>1.0<br>2.0 0.9<br>0.8<br>1.5 T J = 25ºC VGS(th)<br>0.7<br>1.0<br>0.6<br>0.5 0.5<br>0 40 80 120 160 200 240 280 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>IA - Amperes TJ - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

## **IXFK120N65X2 IXFX120N65X2** 

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Fig. 7. Maximum Drain Current vs. Case Temperature<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


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Fig. 9. Transconductance<br>160<br>TJ = - 40ºC<br>140<br>120<br>25ºC<br>100<br>80 125ºC<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


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Fig. 8. Input Admittance<br>180<br>160<br>140<br>120<br>TJ = 125ºC<br>          25ºC<br>100        - 40ºC<br>80<br>60<br>40<br>20<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


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Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>300<br>250<br>200<br>150<br>100<br>TJ = 125ºC<br>50 T J = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4<br>VSD - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>9  VDS = 325V<br> I D = 60A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220 240<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Capacitance** 

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100,000<br>10,000<br>Ciss<br>1,000<br>Coss<br>100<br>10<br>f = 1 MHz  Crss<br>1<br>1 10 100 1000<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFK120N65X2 IXFX120N65X2** 

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**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>100 1000<br>90 RDS(on) Limit<br>80<br>100<br>70 25µs<br>100µs<br>60<br>50 10<br>40<br>30<br>1<br>20  TJ = 150ºC 1ms<br> TC = 25ºC<br>10 Single Pulse<br>0 Fig. 15. Maximum Transient T 0.1 hermal Impedance 10ms<br>1 0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


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Fig. 15. Maximum Transient Thermal Impedance<br>aaaaa<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_120N65X2(X9-S602) 12-14-15 

## **IXFK120N65X2 IXFX120N65X2** 

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**----- Start of picture text -----**<br>
PLUS247 Outline<br>I] A2 FTE af EI<br>1 A<br>rimM ©oflff pg<br>Tre<br>of  @©7<br>| ee |<br>|<br>fg<br>Ul<br>t<br>L<br>IE Al picsb — fel<br>b4<br>1 - Gate NOTE: 1.<br>2,4 - Drain 2. Pin<br>3.<br>3 - Source 3.1<br>3.2<br>TO-264 Outline<br>-’#—— E—+ FA<br>-—1<br>we<br>= é :<br>RTDeo| [one] | QlQ |<br>RIJ D q<br>1 9 3 | ru<br>—<br>(D<br>c<br>ax2 E] Y nk “1 1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFK120N65X2 IXFX120N65X2** sid 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION, All Rights Reserved 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFX120N65X2/power-mosfet-n-channel-650-v-120-a-0024-ohm)
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- [Supplier page](https://es.farnell.com/littelfuse/ixfx120n65x2/mosfet-120a-650v-1-25kw/dp/3930114)
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