# Power MOSFET, N Channel, 250 V, 170 A, 7400 µohm, TO-268HV, Surface Mount

![Product image](https://novapart.co/image/farnell:4757888/)

**URL**: https://novapart.co/products/IXFT170N25X3HV/power-mosfet-n-channel-250-v-170-a-7400-ohm-to
**SKU**: IXFT170N25X3HV
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €12.2100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 890W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-268HV |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 170A |
| Drain Source On State Resistance | 7400µohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757888/)

## **X3-Class HiPerFET[TM] Power MOSFET** 

**IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3** 

**V =   250V DSS I =   170A D25 R**  **7.4m**  **DS(on)** 

**==> picture [523 x 569] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|N-Channel Enhancement Mode|TO-268HV|
|D|(IXFT..HV)|
|Avalanche Rated|
|Fast Intrinsic Diode|
|G|G|
|S|
|@|S|D (Tab)|
|TO-247|
|Symbol|Test Conditions|Maximum Ratings|(IXFH)|
|VDSS|TJ|= 25C to 150C|250|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|250|V|
|G|
|VGSS|Continuous|20|V|D|S|D (Tab)|
|VGSM|Transient|30|V|
|IID25|TExternal Lead Current LimitC|= 25C (Chip Capability)|170160|AA|TO-264K(IXFK)|
|L(RMS)|
|IDM|TC|= 25C, Pulse Width Limited by TJM|400|A|
|IA|TC|= 25C|85|A|
|EAS|TC|= 25C|2.3|J|G|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      50                   V/ns|D|D (Tab)|
|S|
|PD|TC|= 25C|890|W|
|G  = Gate           D      =  Drain|
|TJ|-55 ... +150|C|S  = Source       Tab   =  Drain|
|TJM|150|C|
|Tstg|-55 ... +150|C|Features|
|TL|Maximum Lead Temperature for Soldering                    300|°C|
|TSOLD|1.6 mm (0.062 in.) from Case for 10s                              260|°C||International Standard Packages|
|Md|Mounting Torque (TO-247 & TO-264K)|1.13 / 10         Nm/lb.in||Low RAvalanche RatedDS(ON) and QG|
|Weight|TO-268HV|4                        g||Low Package Inductance|
|TO-247|6                         g|
|TO-264K|10                           g|
|Advantages|
|Symbol|Test Conditions                                                Characteristic Values||High Power Density|
|(TJ = 25C, Unless Otherwise Specified)|Min.       Typ.         Max.||Easy to Mount|
||Space Savings|
|BVDSS|VGS|= 0V, ID = 1mA|250|||V|
|VGS(th)|VDS|= VGS, ID = 4mA|2.5|4.5      V|7|Applications|
|IGSS|VGS|= 20V, VDS = 0V||_|100   nA||Switch-Mode and Resonant-Mode|
|IDSS|VDS|= VDSS, VGS = 0V||10    A|Power Supplies|DC-DC Converters|
|TJ = 125|C|1  mA|_||PFC Circuits|
|RDS(on)|VGS|= 10V, ID = 0.5|•|ID25, Note 1|6.1         7.4  m||AC and DC Motor Drives|
||Robotics and Servo Controls|

**----- End of picture text -----**<br>


DS100809E(6/23) 

© 2023 Littelfuse, Inc. 

**IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 60A, Note 1                              66|110|S|
|**RGi**<br>Gate Input Resistance<br>|1.3||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|13.5<br>2.3<br>1.6|nF<br>nF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|800<br>3280|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)|18<br>10<br>62<br>7|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|190<br>55<br>45|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-247<br>TO-264K|<br>0.21<br>0.15|0.14C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||170     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||680     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 85A, -di/dt = 100A/µs<br>VR= 100V|140<br>770<br>11|ns<br>nC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

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**----- Start of picture text -----**<br>
180 800<br>160 VGSGS = 10V8V 8V  700 VGS = 10V<br>9V<br>140 7V<br>600<br>120 8V<br>500<br>100<br>6V<br>400<br>80 7V<br>300<br>60<br>5V<br>200<br>40<br>6V<br>20 100<br>4V<br>0 0 5V<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30<br>VDS - VoltsDS - Volts - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 85A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C Junction Temperature<br>180 2.8<br>VGS = 10V<br>160 8V VGS = 10V<br>2.4<br>140 7V<br>120 2.0<br>6V I D = 170A<br>100<br>1.6<br>80 I D = 85A<br>60 5V 1.2<br>40<br>0.8<br>20 4V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br>Drain Current vs. Junction Temperature<br>4.0 1.3<br>3.5 VGSGS = 10V  1.2<br>TJJ = 125 [[o]] C 1.1 BVDSS<br>3.0<br>1.0<br>2.5 0.9<br>2.0 0.8<br>0.7<br>1.5 TJ = 25J = 25 = 25 [[o]] C VGS(th)<br>0.6<br>1.0<br>0.5<br>BVDSS<br>0.5 0.4<br>0 100 200 300 400 500 600 700 800 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - AmperesD - Amperes - Amperes TJ - Degrees Centigrade<br> - Amperes  - Amperes<br>IDD ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


**==> picture [252 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>160 VGSGS = 10V8V 8V<br>140 7V<br>120<br>100<br>6V<br>80<br>60<br>5V<br>40<br>20<br>4V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VDS - VoltsDS - Volts - Volts<br> - Amperes<br>IDD<br>**----- End of picture text -----**<br>


**==> picture [252 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.0<br>3.5 VGSGS = 10V<br>TJJ = 125 [[o]] C<br>3.0<br>2.5<br>2.0<br>1.5 TJ = 25J = 25 = 25 [[o]] C<br>1.0<br>0.5<br>0 100 200 300 400 500 600 700 800<br>ID - AmperesD - Amperes - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2023 Littelfuse, Inc. 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

**Fig. 7. Maximum Drain Current vs. Case Temperature** 

**Fig. 8. Input Admittance** 

**==> picture [523 x 391] intentionally omitted <==**

**----- Start of picture text -----**<br>
180 250<br>160<br>External Lead Current Limit 200<br>140<br>120<br>150<br>100<br>80<br>100<br>60 TJ = 125 [o] C<br>25 [o] C<br>- 40 [o] C<br>40<br>50<br>20<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>TC - Degrees Centigrade VGS - Volts<br>Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>240 600<br>TJJ = - 40 [[o]] C<br>200 500<br>160 25 [[o]] C 400<br>120 125 [[o]] C 300<br>80 200<br>TJJ = 25 [[o]] C<br>40 100 TJJ = 125 [[o]] C<br>0 0<br>0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>ID - AmperesD - Amperes - Amperes VSD - VoltsSD - Volts - Volts<br> - Amperes  - Amperes<br>ID ID<br> - Siemens<br> - Amperes<br>g f s f s ISS<br>**----- End of picture text -----**<br>


**==> picture [524 x 390] intentionally omitted <==**

**----- Start of picture text -----**<br>
240 600<br>TJJ = - 40 [[o]] C<br>200 500<br>160 25 [[o]] C 400<br>120 125 [[o]] C 300<br>80 200<br>TJJ = 25 [[o]] C<br>40 100 TJJ = 125 [[o]] C<br>0 0<br>0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>ID - AmperesD - Amperes - Amperes VSD - VoltsSD - Volts - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9 VDS = 125V<br>8 II DG = 10mA     = 85A 10,000 Ciss<br>7<br>6 1,000<br>5 Coss<br>4 100<br>3<br>Crss<br>2 10<br>f = 1 MHz<br>1<br>0 1<br>0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br> - Amperes<br>g f s f s ISS<br>Volts<br> -<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

**Fig. 13. Output Capacitance Stored Energy** 

**Fig. 14. Forward-Bias Safe Operating Area** 

**==> picture [522 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
24 1000<br>RDS(on) Limit<br>20 25µs<br>100<br>16 100µs<br>12 10<br>8<br>1ms<br>1<br>TJ = 150 [o] C<br>4 TC = 25 [o] C    10ms<br>Single Pulse        100ms<br>DC<br>0 0.1<br>0 40 80 120 160 200 240 1 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br>- MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>K / W<br> -<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2023 Littelfuse, Inc. 

IXYS REF: F_170N25X3 (28-S301) 4-24-17 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

## **TO-268HV Outline** 

**==> picture [44 x 29] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 - Gate<br>2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


**==> picture [256 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 Outline TO-264K Outline<br>D A<br> A2  A2 A E B  0P O 0K M  D B M+<br>“h a = foo<br>Q<br>R   + S  D2   +<br>f Tok e '  D1 ty<br>D<br>0P1<br>4<br>{ 1 2 3 i ixys option  2 “booed {| Hl<br> L1 lt a7<br>C<br>L L oos f a  E1 r | tat<br> A1 b | | ArTir<br>c  b2  b4 1 - Gate<br>e V O  J  M  C  A M+ [“lL] e 2,4 - Drain | tt<br>3 - Source Se a<br>[sym Ft reqes<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** ~~ss~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2023 Littelfuse, Inc. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixft170n25x3hv/mosfet-n-ch-250v-170a-to-268hv/dp/4757888)
---

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