# Power MOSFET, N Channel, 600 V, 28 A, 0.26 ohm, TO-3P, Through Hole

![Product image](https://novapart.co/image/farnell:2674766/)

**URL**: https://novapart.co/products/IXFQ28N60P3/power-mosfet-n-channel-600-v-28-a-026-ohm-to-3p
**SKU**: IXFQ28N60P3
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.9800
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar3 HiPerFET |
| Qualification | - |
| Power Dissipation | 695W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-3P |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 28A |
| Drain Source On State Resistance | 0.26ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674766/)

## **Polar3[TM ] HiperFET[TM] Power MOSFET** 

## **IXFQ28N60P3 IXFH28N60P3** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

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||||||
|---|---|---|---|---|
|Symbol|Test Conditions|Maximum Ratings|
|VDSS|TJ|= 25C to 150C|600|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|600|V|
|VGSS|Continuous| 30|V|
|VGSM|Transient| 40|V|
|ID25|TC|= 25C|28|A|
|IDM|TC|= 25C, Pulse Width Limited by TJM|70|A|
|IA|TC|= 25C|14|A|
|EAS|TC|= 25C|500|mJ|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      35                V/ns|
|PD|TC|= 25C|695|W|
|T|-55 ... +150|C|
|J|
|TJM|150|C|
|T|-55 ... +150|C|
|stg|
|TL|Maximum Lead Temperature for Soldering                    300|°C|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|Md|Mounting Torque|1.13 / 10|Nm/lb.in|
|Weight|TO-3P|5.5                         g|
|TO-247|6.0|g|

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|||||||
|---|---|---|---|---|---|
|Symbol|Test Conditions                                             Characteristic Values|
|(TJ = 25C Unless Otherwise Specified)|Min.       Typ.      Max.|
|BVDSS|VGS|= 0V, ID = 1mA|600|||V|
|VGS(th)|VDS|= VGS, ID = 2.5mA|3.0|5.0    V||||
|IGSS|VGS|= 30V, VDS = 0V|||||100  nA|
|IDSS|VDS|= VDSS, VGS =  0V|25    A|
|TJ = 125C|1.5|=|mA|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|260  m|_||

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**V =   600V DSS I =   28A D25 R  260m  DS(on)** 

## **TO-3P (IXFQ)** 

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G<br>D<br>S<br>    Tab<br>TO-247 ( IXFH)<br>G<br>D     Tab<br>S<br>G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

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|||
|---|---|
||Fast Intrinsic Rectifier|
||Avalanche Rated|
||Low RDS(ON) and QG|
||Low Package Inductance|
|Advantages|

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|||
|---|---|
||High Power Density|
||Easy to Mount|
||Space Savings|
|Applications|

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|||
|---|---|
||Switch-Mode and Resonant-Mode|
|Power Supplies|
||DC-DC Converters|
||Laser Drivers|
||AC and DC Motor Drives|
||Robotics and Servo Controls|

**----- End of picture text -----**<br>


DS100322B(6/18) 

© 2018 IXYS CORPORATION,  All Rights Reserved 

**IXFQ28N60P3 IXFH28N60P3** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   18|30|S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|3560<br>360<br>3.3|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|1.5||
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|27<br>18<br>48<br>19|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|50<br>17<br>14|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>|<br>0.25|0.18 C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br> |
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**IS**<br>VGS= 0V||28<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||112<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 14A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>9.0 <br>0.8|250     ns<br> A<br>μC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFQ28N60P3 IXFH28N60P3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>28<br>V GS = 10V<br>          8V<br>24<br>20 7V<br>16<br>12 6V<br>8<br>4<br>5V<br>0<br>0 1 2 3 4 5 6 7 8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>60<br>VGS = 10V<br>          8V<br>50<br>7V<br>40<br>30<br>20<br>6V<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125 [o] C Fig. 4. RDS(on) Normalized to ID = 14A Value vs.<br>Junction Temperature<br>28 3.4<br>V GS = 10V<br>24          7V     3.0 VGS = 10V<br>2.6<br>20 6V I D = 28A<br>2.2<br>16<br>1.8 I D = 14A<br>12<br>1.4<br>8<br>1.0<br>5V<br>4<br>0.6<br>0 0.2<br>0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 14A Value vs.<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>Drain Current<br>3.4 32<br>V GS = 10V<br>3.0 T J  = 125 [o] C 28<br>24<br>2.6<br>20<br>2.2<br>16<br>1.8<br>12<br>1.4 TJ = 25 [o] C<br>8<br>1.0<br>4<br>0.6 0<br>0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION,  All Rights Reserved 

**IXFQ28N60P3 IXFH28N60P3** 

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Fig. 7. Input Admittance<br>50<br>40<br>TJ = 125 [o] C<br>          25 [o] C<br>        - 40 [o] C<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30 TJ = 125 [o] C<br>T J  = 25 [o] C<br>20<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>**----- End of picture text -----**<br>


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60<br>TJ = - 40 [o] C<br>50<br>25 [o] C<br>40<br>125 [o] C<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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10<br>9  VDS = 300V<br> I D = 14A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
10,000 100<br>RDS(on) Limit<br>25μs<br>Ciss<br>100μs<br>1,000<br>10<br>C oss<br>100<br>1<br>10<br>T J  = 150 [o] C<br>Crss TC = 25 [o] C    1ms<br>f = 1 MHz  Single Pulse<br>1 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFQ28N60P3 IXFH28N60P3** 

**Fig. 13. Maximum Transient Thermal Impedance** 

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1<br>Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.3<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_28N60P3(K7)03-26-12-A 

**IXFQ28N60P3 IXFH28N60P3** 

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**----- Start of picture text -----**<br>
TO-247 Outline<br>ete]— ee RT<br>Le<br>‘| Onl 02 (©)<br>ot<br>12 iL<br>ul 3s som<br>il |<br>;<br>cit Vi 1 - Gate<br>“ 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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TO-3P Outline E<br>| A oP<br>(/© [—\) af<br> OF<br>| D1<br>1% 3<br>uf aye<br>Tt<br>]<br>lye 1 - Gate<br>2,4 - Drain<br>at 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

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---

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