# MOSFET, N-CH, 200V, 90A, TO-220AB

![Product image](https://novapart.co/image/farnell:3949063/)

**URL**: https://novapart.co/products/IXFP90N20X3./mosfet-n-ch-200v-90a-to-220ab
**SKU**: IXFP90N20X3.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.2500
**Stock**: 10+
**Lead Time**: 221 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 390W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 90A |
| Drain Source On State Resistance | 0.0105ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949063/)

## **X3-Class HiPerFET[TM] Power MOSFET** 

## **IXFP90N20X3 IXFQ90N20X3 IXFH90N20X3** 

**V =   200V DSS I =   90A D25 R  12.8m  DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

**==> picture [113 x 66] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220AB (IXFP)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**<br>TJ = 25C to 150C<br>200<br>V<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>200<br>V<br>~~ee~~||||
|**VGSS**<br>**VGSM**|Continuous<br>Transient|20<br>30|V<br>V|
|**ID25**|TC = 25C|90|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|220|A|
|**IA**|TC = 25C|45|A|
|**EAS**<br>**dv/dt**I|TC = 25C<br>IS IDM, VDD VDSS, TJ 150°C                                      20                   V/ns|1.5<br>150°C                                      20                   V/ns|J<br>150°C                                      20                   V/ns|
|**PD**|TC = 25C|390|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**<br>**Weight**|Mounting Torque<br>1.13 / 10         Nm/lb.in<br>TO-220<br>3.0|1.13 / 10         Nm/lb.in<br>3.0<br>g||
|TO-3P<br>TO-247|TO-3P<br>5.5<br>TO-247<br>6.0|5.5<br>6.0|g<br>g|



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TO-3P (IXFQ)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D S D (Tab)<br>G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>200|~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 1.5mA<br>2.5 4.5      V|4.5      V<br>~~|~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~<br>~~|~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>300|5<br>300<br>~~|—~~|5A<br>300A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|10.5       12.8  m|10.5       12.8  m|



- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

DS100802D(4/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXFP90N20X3    IXFQ90N20X3 IXFH90N20X3** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                      40|67|S|
|**RGi**<br>Gate Input Resistance<br>|1.4||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5420<br>930<br>4|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|420<br>1300|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)|22<br>26<br>62<br>13|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|78<br>23<br>22|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247 & TO-3P|<br>0.50<br>0.25|0.32C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||90     A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||360     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 45A, -di/dt = 100A/μs<br>VR= 100V|95<br>360<br>7.6|ns<br>nC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFP90N20X3    IXFQ90N20X3 IXFH90N20X3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>90 400<br>VGS = 10V VGS = 10V<br>80           8V    350<br>70 7V 9V<br>300<br>60<br>250 8V<br>50<br>6V 200<br>40<br>150<br>30 7V<br>100<br>20<br>6V<br>10 5V 50<br>5V<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 45A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>90 2.8<br>VGS = 10V<br>80            8V VGS = 10V<br>7V 2.4<br>70<br>60 2.0 I D = 90A<br>50<br>6V 1.6 I D = 45A<br>40<br>30 1.2<br>5V<br>20<br>0.8<br>10<br>4V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 VGS = 10V  1.2<br>3.5 1.1 BV DSS<br>TJ = 125 [o] C<br>3.0<br>1.0<br>2.5<br>0.9<br>2.0<br>T J  = 25 [o] C 0.8<br>1.5 V GS(th)<br>0.7<br>1.0<br>0.5 0.6<br>0 50 100 150 200 250 300 350 400 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXFP90N20X3    IXFQ90N20X3 IXFH90N20X3** 

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Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>100 240<br>200<br>80<br>160<br>60<br>120<br>40<br>80<br>TJ = 125 [o] C<br>20           25 [o] C<br>40 - 40 [o] C<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


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Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>180 400<br>TJ = - 40 [o] C<br>160 350<br>140<br>300<br>120 25 [o] C<br>250<br>100<br>200<br>80 125 [o] C<br>150<br>60<br>T J  = 125 [o] C<br>100<br>40<br>T J  = 25 [o] C<br>20 50<br>0 0<br>0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100000<br> V DS = 100V<br>8  I D = 45A 10000<br> I G = 10mA    Ciss<br>6 1000<br>Coss<br>4 100<br>Crss<br>2 10<br>f = 1 MHz<br>0 1<br>0 10 20 30 40 50 60 70 80 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFP90N20X3    IXFQ90N20X3 IXFH90N20X3** 

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Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>8 1000<br>7 R DS( on )  Limit<br>25μs<br>6 100<br>5<br>100μs<br>4 10<br>3<br>2 1<br> TJ = 150 [o] C<br>1ms<br>1  TC = 25 [o] C<br> Single Pulse<br>DC 10ms<br>0 0.1<br>0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Fig. 15. Maximum Transient Thermal Impedance** 

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1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_90N20X3(25-S202) 5-31-17-A 

## **IXFP90N20X3    IXFQ90N20X3 IXFH90N20X3** 

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**----- Start of picture text -----**<br>
TO-220 Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Pins: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TO-3P Outline   TO-247 Outline<br>D A<br>A2A E B<br>Q<br>R S D2<br>D1<br>D<br>P1<br>4<br>| 1 @ |3 D 7 DI ee L1 T 1       2      3 _a!<br>TTT d k TT ca hoe E1<br>f L<br>|<br>A1 1 b<br>U —+ ~ C JE b2 b4 e 1 - Gate2,4 - Drain<br>ea aient 3 - Source<br>P T Loe ae<br>: (e} H { | 7  GreraG)<br>Pins: 3 - Source1 - Gate 4 -  Drain2 - Drain alee<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFP90N20X3./mosfet-n-ch-200v-90a-to-220ab)
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- [Supplier page](https://es.farnell.com/littelfuse/ixfp90n20x3/mosfet-n-ch-200v-90a-to-220ab/dp/3949063)
---

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