# MOSFET, N-CH, 300V, 56A, TO-220

![Product image](https://novapart.co/image/farnell:3949057/)

**URL**: https://novapart.co/products/IXFP56N30X3M./mosfet-n-ch-300v-56a-to-220
**SKU**: IXFP56N30X3M.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.4500
**Stock**: 10+
**Lead Time**: 114 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:300V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 0.021ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949057/)

## **X3-Class HiPerFET[TM] Power MOSFET** 

**==> picture [201 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =   300V<br>DSS<br>I =   56A<br>D25<br>R     27m <br>D DS(on)<br>G<br>S OVERMOLDED<br>TO-220<br>gs<br>V<br>V Isolated Tab<br>G D S<br>V<br>V G = Gate D = Drain<br>S = Source<br>**----- End of picture text -----**<br>


## **IXFP56N30X3M** 

## **(Electrically Isolated Tab)** 

N-Channel Enhancement Mode 

|**Symbol**|**Test Conditions**|**Maximum Ratingss**||
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|300|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|300|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C, Limited by TJM|56|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|112|A|
|**IA**|TC = 25C|28|A|
|**EAS**|TC = 25C|700|mJ|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns|
|**PD**|TC = 25C|36|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**VISOL**|50/60 Hz, 1 Minute                                                        2500|50/60 Hz, 1 Minute                                                        2500<br>|V~|
|**Md**|Mounting Torque<br>1.13 / 10         Nm/lb.in|1.13 / 10         Nm/lb.in||
|**Weight**|2.5|2.5|g|



## **Features** 

- International Standard Package 

- Plastic Overmolded Tab  Low RDS(ON) and QG  Avalanche Rated  2500V~ Electrical Isolation 

- Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount  Space Savings 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>300|~~__~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 1.5mA<br>2.5                            4.5    V|2.5                            4.5    V<br>~~—_~~|2.5                            4.5    V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~—_~~<br>~~—~~|100  nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>500|5<br>500<br>~~—_~~|5A<br>500A|
|**RDS(on)**<br>VGS = 10V, ID= 28A, Note 1|21             27 m<br>~~—_~~|21             27 m|



## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 

DS100885C(11/19) 

© 2019 IXYS CORPORATION, All Rights Reserved 

**IXFP56N30X3M** 

|**Symbol**<br>(TJ= 25C,|**Test Conditions                                               Characteristic Values**<br>Unless Otherwise Specified)**Min.       Typ.        Max**|**Test Conditions                                               Characteristic Values**<br>Unless Otherwise Specified)**Min.       Typ.        Max**|**Test Conditions                                               Characteristic Values**<br>Unless Otherwise Specified)**Min.       Typ.        Max**|
|---|---|---|---|
|**gfs**|VDS= 10V, ID= 28A,   Note 1                         26|43|S|
|**RGi**|Gate Input Resistance<br>|2.3||
|**Ciss**||3750|pF|
|**Coss**|VGS= 0V, VDS= 25V, f = 1MHz<br>|560|pF|
|**Crss**||3|pF|
||**Effective Output Capacitance**|||
|**Co(er)**<br>**Co(tr)**|<br> <br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|210<br>860|pF<br>pF|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|<br> <br> <br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 28A<br>RG=5(External)|21<br>26<br>64<br>10|ns<br>ns<br>ns<br>ns|
|**Qg(on)**||56|nC|
|**Qgs**|VGS= 10V, VDS= 0.5**•**VDSS, ID= 28A<br>|18|nC|
|**Qgd**||17|nC|
|**RthJC**|||3.5C/W|
|**RthCS**||0.50|C/W|



## **Source-Drain Diode** 

|**Symbol**|**Test Conditions**|**Characteristic**|**Characteristic**|**Values**||
|---|---|---|---|---|---|
|(TJ= 25C,|Unless Otherwise Specified)|**Min.**|**Typ.**|**Max**||
|**IS**|VGS= 0V|||56|A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|||224|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||1.4|V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br>IF= 28A, -di/dt = 100A/μs<br>VR= 100V|<br> <br>|115<br>580<br>10|ns<br>nC<br>A||



**==> picture [163 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
OVERMOLDED TO-220<br>(IXFP...M) oP<br>1 2 3<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXFP56N30X3M** 

**==> picture [264 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>60<br>VGS = 10V<br>          9V<br>50<br>8V<br>40<br>7V<br>30<br>20<br>6V<br>10<br>5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

**==> picture [253 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>V GS = 10V<br>180<br>160 9V<br>140<br>120 8V<br>100<br>80 7V<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [537 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 28A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>60 3.0<br>VGS = 10V<br>           9V VGS = 10V<br>50 8V 2.6<br>7V 2.2<br>40<br>1.8<br>I D = 56A<br>30<br>6V 1.4<br>I D = 28A<br>20<br>1.0<br>10<br>5V 0.6<br>4V<br>0 0.2<br>0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 28A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 V GS = 10V  1.2<br>3.5<br>TJ = 125 [o] C 1.1 BV DSS<br>3.0<br>1.0<br>2.5<br>0.9<br>2.0<br>0.8<br>1.5 TJ = 25 [o] C VGS(th)<br>0.7<br>1.0<br>0.5 0.6<br>0 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved 

## **IXFP56N30X3M** 

**==> picture [538 x 639] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>80 90<br>70 VDS = 10V  80 VDS = 10V  TJ = - 40 [o] C<br>70<br>60<br>60  25 [o] C<br>50<br>50<br>40 125 [o] C<br>40<br>30 T J = 125 [o] C 30<br>          25 [o] C<br>20<br>20<br>- 40 [o] C<br>10 10<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 10 20 30 40 50 60 70 80<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>140 10<br>9  VDS = 150V<br>120  I D = 28A<br>8<br> I G = 10mA<br>100 7<br>6<br>80<br>5<br>60<br>4<br>TJ = 125 [o] C<br>3<br>40<br>T J  = 25 [o] C 2<br>20<br>1<br>0 0<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 35 40 45 50 55<br>VSD - Volts QG - NanoCoulombs<br>Fig. 12. Output Capacitance Stored Energy<br>Fig. 11. Capacitance<br>10<br>100,000<br>f = 1 MHz<br>8<br>10,000<br>Ciss<br>1,000 6<br>100 Coss 4<br>C rss<br>10 2<br>1 0<br>1 10 100 1,000 0 50 100 150 200 250 300<br>VDS - Volts VDS - Volts<br> - Siemens<br> - AmperesID gf s<br> - Volts<br>GS<br> - AmperesIS V<br> - MicroJoules<br>OSS<br>E<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFP56N30X3M** 

**Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance** 

**==> picture [256 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>R DS( on )  Limit<br>100<br>10<br>100μs<br>1<br>1ms<br>0.1  TJ = 150 [o] C 10ms<br> TC = 25 [o] C    DC<br> Single Pulse<br>0.01<br>1 10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [254 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_56N30X3(24-S301) 1-09-18-A 

**IXFP56N30X3M** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 



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- [View this product on Novapart](https://novapart.co/products/IXFP56N30X3M./mosfet-n-ch-300v-56a-to-220)
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- [Supplier page](https://es.farnell.com/littelfuse/ixfp56n30x3m/mosfet-n-ch-300v-56a-to-220/dp/3949057)
---

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