# MOSFET, N-CH, 200V, 36A, TO-220

![Product image](https://novapart.co/image/farnell:3949056/)

**URL**: https://novapart.co/products/IXFP36N20X3M./mosfet-n-ch-200v-36a-to-220
**SKU**: IXFP36N20X3M.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7500
**Stock**: 10+
**Lead Time**: 270 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949056/)

## **X3-Class HiPerFET[TM] Power MOSFET** 

## **IXFP36N20X3M** 

**V =   200V DSS I =   36A D25 R  45m  DS(on)** 

## **(Electrically Isolated Tab)** 

N-Channel Enhancement Mode 

|**Symbol**<br>~~a~~|**Test Conditions**<br>~~a~~|**Maximum Ratings**<br>~~a~~|~~a~~|
|---|---|---|---|
|~~a~~|~~a~~|~~a~~|~~a~~|
|**VDSS**|TJ = 25C to 150C|200|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|200|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C, Limited by TJM|36|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|50|A|
|**IA**|TC = 25C|18                        A|18                        A|
|**EAS**|TC = 25C|300|mJ|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      20                   V/ns|150°C                                      20                   V/ns|150°C                                      20                   V/ns|
|**PD**|TC = 25C|36|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**VISOL**|50/60 Hz, 1 Minute                                                        2500|50/60 Hz, 1 Minute                                                        2500<br>|V~|
|**Md**|Mounting Torque<br>1.13 / 10         Nm/lb.in|1.13 / 10         Nm/lb.in||
|**Weight**|2.5|2.5|g|



**OVERMOLDED TO-220** Isolated Tab G D S 

G = Gate D = Drain S = Source 

## **Features** 

- International Standard Package 

- Plastic Overmolded Tab  Low RDS(ON) and QG  Avalanche Rated  2500V~ Electrical Isolation  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>200<br>~~|~~|~~||~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 500μA<br>2.5                            4.5    V<br>~~|~~<br>~~|~~|2.5                            4.5    V<br>~~|~~<br>~~|~~|2.5                            4.5    V|
|**IGSS**<br>VGS =20V, VDS= 0V<br><br>~~|~~<br>~~|~~|<br>~~|~~<br>~~|~~|100  nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>100<br>~~|~~|5<br>100<br>~~|-~~|5A<br>100A|
|**RDS(on)**<br>VGS = 10V, ID= 18A, Note 1|38            45 m<br>~~—~~|38            45 m|



DS100847D(5/19) 

© 2019 IXYS CORPORATION, All Rights Reserved 

**IXFP36N20X3M** 

|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|**IXFP36N20X3M**|
|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||
||||||||||||
|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|||||||1<br>2<br>3<br>**OVERMOLDED TO-220**<br>**(IXFP...M)**<br>oP||||
||||||||||2<br>3<br>oP||
|**gfs**<br>VDS= 10V, ID= 18A,   Note 1                           16||26||S|||||||
|**RGi**<br>Gate Input Resistance<br>||1.6|||||||||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>||1425<br>280<br>1.2||pF<br>pF<br>pF|||||||
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS = 0.8 • VDSS|||||||||||
||<br> <br>**pacitance**<br>GS= 0V<br>DS = 0.8 • VDSS|130<br>400||pF<br>pF|||||Terminals:<br>1 -<br>2 -<br>3 -|Gate<br>Drain<br>Source|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**Resistive Switchin**<br>VGS= 10V, VDS= 0.5<br>RG= 30(External)|<br> <br> <br> <br>**g Times**<br>• VDSS, ID= 18A<br>|19<br>30<br>54<br>20||ns<br>ns<br>ns<br>ns|||||||
|**Qg(on)**<br>**Qgs**<br>VGS= 10V, VDS= 0.5<br>**Qgd**<br>**RthJC**<br>**RthCS**<br>|||||||||||
||||||||||||
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions**<br>(TJ= 25C, Unless Otherwise Spec|**Characteristic Values**<br>ified)**Min.       Typ.       Max**||||||||||
|**IS**<br>VGS= 0V|||||36     A||||||
|**ISM**<br>Repetitive, Pulse Wi|dth Limited by TJM||||144     A||||||
|**VSD**<br>IF= IS, VGS= 0V, Not|e 1||||1.4     V||||||
|**trr**<br>**QRM**<br>**IRM**<br>IF= 18A, -di/dt = 100<br>VR= 100V|<br> <br> <br>A/μs||75<br>230<br>6||ns<br>nC<br>A||||||
||||||||||||



|**Symbol**|**Test Conditions**|**Characteristic**|**Characteristic**|**Values**||
|---|---|---|---|---|---|
|(TJ= 25C,|Unless Otherwise Specified)|**Min.**|**Typ.**|**Max**||
|**IS**|VGS= 0V|||36|A|
|**ISM**|Repetitive, Pulse Width Limited by TJM|||144|A|
|**VSD**|IF= IS, VGS= 0V, Note 1|||1.4|V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br>IF= 18A, -di/dt = 100A/μs<br>VR= 100V|<br> <br>|75<br>230<br>6|ns<br>nC<br>A||



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFP36N20X3M** 

**==> picture [538 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>36 80<br>VGS = 10V VGS = 10V<br>            9V   70 9V<br>30<br>8V<br>60<br>8V<br>24<br>50<br>7V<br>18 40<br>7V<br>30<br>12<br>20<br>6V<br>6 6V<br>10<br>5V<br>0 0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**==> picture [532 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 18A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>36 3.2<br>VGS = 10V<br>             9V 8V VGS = 10V<br>2.8<br>30<br>2.4<br>7V<br>24<br>I  D  = 36A<br>2.0<br>18<br>1.6 I  D  = 18A<br>6V<br>12<br>1.2<br>6<br>0.8<br>5V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>3.8 1.2<br>3.4 VGS = 10V  BVDSS<br>1.1<br>3.0<br>T J  = 125 [o] C 1.0<br>2.6<br>2.2 0.9<br>1.8<br>T J  = 25 [o] C 0.8 V GS(th)<br>1.4<br>0.7<br>1.0<br>0.6 0.6<br>0 10 20 30 40 50 60 70 80 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved 

**IXFP36N20X3M** 

**==> picture [537 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>50 45<br>45 VDS = 10V 40 VDS = 10V TJ = - 40 [o] C<br>40<br>35<br>35<br>30 25 [o] C<br>30<br>25<br>25<br>125 [o] C<br>20<br>20<br>TJ = 125 [o] C 15<br>15            25 [o] C<br>10 - 40 [o] C  10<br>5 5<br>0 0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 5 10 15 20 25 30 35 40 45 50<br>VGS - Volts ID - Amperes<br> - Siemens<br> - AmperesID gf s<br>**----- End of picture text -----**<br>


**==> picture [270 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>140<br>120<br>100<br>80<br>60<br>T J  = 125 [o] C<br>40<br>TJ = 25 [o] C<br>20<br>0<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>100<br>Coss<br>10<br>Crss<br>f = 1 MHz<br>1<br>1 10 100 1,000<br>VDS - Volts<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [264 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9  V DS = 100V<br>8  I D = 18A<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22<br>QG - NanoCoulombs<br>Fig. 12. Output Capacitance Stored Energy<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 20 40 60 80 100 120 140 160 180 200<br>VDS - Volts<br> - Volts<br>GS<br>V<br> - MicroJoules<br>OSS<br>E<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFP36N20X3M** 

**==> picture [538 x 233] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 14. Maximum Transient Thermal Impedance<br>Fig. 13. Forward-Bias Safe Operating Area<br>100 10<br>RDS(on) Limit<br>1<br>10<br>0.1<br>100μs<br>1<br>0.01<br> T J = 150 [o] C<br> T C  = 25 [o] C<br> Single Pulse  1ms<br>DC 10ms<br>0.1 0.001<br>1 10 100 1,000 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>VDS - Volts Pulse Width - Seconds<br> - Amperes  - K / W<br>ID (th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2019 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_36N20X3(22-S202) 6-28-17 

**IXFP36N20X3M** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixfp36n20x3m/mosfet-n-ch-200v-36a-to-220/dp/3949056)
---

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