# Power MOSFET, N Channel, 650 V, 34 A, 0.1 ohm, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:3973208/)

**URL**: https://novapart.co/products/IXFP34N65X3/power-mosfet-n-channel-650-v-34-a-01-ohm-to-220
**SKU**: IXFP34N65X3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.5100
**Stock**: 200+
**Lead Time**: 295 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 446W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.1ohm |
| Gate Source Threshold Voltage Max | 5.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3973208/)

## **X3-Class HiPerFET[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated 

**V =   650V DSS I =   34A D25 R**  **100m**  **DS(on)** 

## **IXFP34N65X3** 

**==> picture [119 x 69] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G<br>TO-220<br>S (IXFP)<br>**----- End of picture text -----**<br>


|||||G|||
|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|**Maximum Ratings**||S<br>D|D (Tab)||
|**VDSS**|TJ = 25C to 150C|650|V||||
|**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain||
|**VGSS**|Continuous|20|V||||
|**VGSM**|Transient|30|V||||
|**ID25**|TC = 25C|34|A||||
|**IDM**|TC = 25C, Pulse Width Limited by TJM|48|A|**Features**|||
|**IA**|TC = 25C|5|A||||
|**EAS**|TC = 25C|750|mJ|International Standard Package||International Standard Package|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns|Low RDS(ON)and QG<br>Avalanche Rated|||
|**PD**|TC = 25C|446|W|Low Package Inductance|||
|**TJ**||-55 ... +150|C||||
|**TJM**||150|C|**Advantages**|||
|**Tstg**<br>**TL**|Maximum Lead Temperature for Soldering                     300<br>1.6 mm (0.062 in.) from Case for 10s|-55 ... +150<br>Maximum Lead Temperature for Soldering                     300|C<br>°C|High Power Density<br>Easy to Mount<br>Space Savings|||
|**Md**|Mounting Torque<br>1.13 / 10         Nm/lb.in|1.13 / 10         Nm/lb.in|||||
|**Weight**|3|3|g|**Applications**|||



- International Standard Package 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Applications** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>650||V|
|**VGS(th)**<br>VDS = VGS, ID= 2.5mA<br>3.2 5.2      V|5.2      V<br>~~_~~|5.2      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~_~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>3  mA|25<br>3  mA<br>~~=~~|25A<br>3  mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|100  m<br>~~|~~|100  m|



- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters  PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS101013B(9/21) 

©2021 Littelfuse, Inc. 

## **IXFP34N65X3** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                   13|22|S|
|**RGi**<br>Gate Input Resistance<br>|1.7||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2025<br>2800<br>2.6|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|100<br>440|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|24<br>10<br>47<br>6|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|29<br>11<br>10|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.50|0.28C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max**|
|**IS**<br>VGS= 0V|||34       A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|||136       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|||1.4        V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br> <br>IF= 17A, -di/dt = 100A/µs<br>VR= 100V|150<br>1.05<br>14.0|ns<br>µC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFP34N65X3** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

**==> picture [530 x 611] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>32 VGS = 10V VGS = 10V<br>70<br>28 9V<br>60<br>24<br>8V 50 9V<br>20<br>40<br>16<br>8V<br>30<br>12<br>7V<br>8 20 7V<br>4 6V 10<br>6V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20<br>VDS - Volts VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 17A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C Junction Temperature<br>3.8<br>32 VGS = 10V<br>9V 3.4 VGS = 10V<br>28<br>3.0<br>24 8V<br>2.6<br>20 I D = 34A<br>2.2<br>16 7V<br>1.8<br>I D = 17A<br>12<br>1.4<br>8 6V 1.0<br>4 0.6<br>5V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br>Drain Current vs. Junction Temperature<br>4.5 1.3<br>4.0 VGS = 10V     1.2<br>3.5 TJ = 125 [o] C 1.1 BVDSS<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>TJ = 25 [o] C VGS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 10 20 30 40 50 60 70 80 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXFP34N65X3** 

**==> picture [540 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>36 45<br>40 VDS = 10V<br>30<br>35<br>24 30<br>TJ = 125 [o] C<br>25 25 [o] C<br>18 - 40 [o] C<br>20<br>12 15<br>10<br>6<br>5<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>TC - Degrees Centigrade VGS - Volts<br>- Amperes - Amperes<br>I D I D<br>**----- End of picture text -----**<br>


**Fig. 9. Transconductance** 

**Fig. 10. Forward Voltage Drop of Intrinsic Diode** 

**==> picture [531 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 120<br>35 VDS = 10V TJ = - 40 [o] C<br>100<br>30<br>80<br>25 [o] C<br>25<br>20 60<br>125 [o] C  TJ = 125 [o] C<br>15<br>40<br>10 TJ = 25 [o] C<br>20<br>5<br>0 0<br>0 5 10 15 20 25 30 35 40 45 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4<br>ID - Amperes VSD - Volts<br>- Siemens - Amperes<br>g f s I S<br>**----- End of picture text -----**<br>


**Fig. 11. Gate Charge** 

**Fig. 12. Capacitance** 

**==> picture [530 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 100,000.0<br>9 VDS = 325V<br>I D = 17A 10,000.0<br>8 I G = 10mA      Ciss<br>7<br>1,000.0<br>6<br>Coss<br>5 100.0<br>4<br>10.0<br>3<br>2<br>1.0 C rss<br>f = 1 MHz<br>1<br>0 0.1<br>0 5 10 15 20 25 30 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

**IXFP34N65X3** 

## **Fig. 13. Output Capacitance Stored Energy** 

**Fig. 14. Forward-Bias Safe Operating Area** 

**==> picture [542 x 454] intentionally omitted <==**

**----- Start of picture text -----**<br>
24 100<br>RDS(on) Limit<br>25µs<br>20<br>16 10<br>100µs<br>12<br>8 1<br>TJ = 150 [o] C<br>4 TC = 25 [o] C<br>Single Pulse<br>1ms<br>0 0.1<br>0 100 200 300 400 Fig. 15. Maximum Transient Thermal Impedance 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br>1<br>Fig. 15. Maximum Transient Thermal Impedance<br>aaaaa<br>0.4<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

IXYS REF: F_34N65X3 (735) 6-18-20 

## **IXFP34N65X3** 

**==> picture [177 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220 Outline<br>E A<br>0P<br>ae fA A1 +<br>H1<br>Q<br>D (D2)<br>— ; D1<br>4<br>1 2 3 (E1)<br>A2<br>L1<br>=<br>|<br>e J c to 3X b<br>w he e1 3X b2<br>1 - Gate<br>ta) 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFP34N65X3/power-mosfet-n-channel-650-v-34-a-01-ohm-to-220)
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