# Power MOSFET, N Channel, 300 V, 130 A, 0.022 ohm, ISOTOP, Module

![Product image](https://novapart.co/image/farnell:7347995/)

**URL**: https://novapart.co/products/IXFN130N30/power-mosfet-n-channel-300-v-130-a-0022-ohm-isotop
**SKU**: IXFN130N30
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €24.7300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Power Dissipation | 700W |
| Transistor Mounting | Module |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 700W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.022ohm |
| Transistor Case Style | ISOTOP |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 130A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:7347995/)

## **HiPerFET[TM] Power MOSFETs Single Die MOSFET** 

## **IXFN 130N30** 

**==> picture [117 x 79] intentionally omitted <==**

**----- Start of picture text -----**<br>
V = 300 V<br>DSS<br>I = 130 A<br>D25<br>R   22  m Ω<br>DS(on) =<br>t <  250  ns<br>rr<br>**----- End of picture text -----**<br>


**==> picture [44 x 61] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G<br>S<br>S<br>**----- End of picture text -----**<br>


N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 

**==> picture [119 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
miniBLOC, SOT-227 B (IXFN)<br>           E153432<br>**----- End of picture text -----**<br>


||||S|S|
|---|---|---|---|---|
|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|
|**VDSS**|TJ = 25°C to 150°C||300|V|
|**VDGR**<br>oo|TJ = 25°C to 150°C; RGS= 1 MΩ<br>oo||300<br>oo|V<br>oo|
|**VGS**|Continuous||±20|V|
|**VGSM**|Transient||±30|V|
|**ID25**|TC= 25°C||130|A|
|**IL(RMS)**|Terminal (current limit)|Terminal (current limit)|100|A|
|**IDM**|TC= 25°C, pulse width limited by T|C, pulse width limited by TJM|520|A|
|**IAR**|TC= 25°C||100|A|
|**EAR**|TC= 25°C||85|mJ|
|**EAS**|TC= 25°C||4|J|
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,||5|V/ns|
||TJ ≤150°C, RG= 2|= 2Ω|||
|**PD**<br>**TJ**|TC = 25°C|-55 ... +150|700<br>-55 ... +150|W<br>°C|
|**TJM**|||150|°C|
|**Tstg**<br>**VISOL**|50/60 Hz, RMS<br>IISOL ≤1 mA|t = 1 min<br>t = 1 s|-55 ... +150<br>2500<br>3000|°C<br>V~<br>V~|
|**Md**|Mounting torque<br>Terminal connection torque||1.5/13 <br>1.5/13|Nm/lb.in.<br> Nm/lb.in.|
|**Weight**|||30|g|



**==> picture [155 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
S<br>G<br>S<br>D<br>G = Gate D = Drain<br>S = Source<br>**----- End of picture text -----**<br>


Either Source terminal at miniBLOC can be used as Main or Kelvin Source 

## **Features** 

- International standard packages 

- miniBLOC, with Aluminium nitride isolation 

- Low RDS (on) HDMOS[TM] process 

- Rugged polysilicon gate cell structure 

- Unclamped Inductive Switching (UIS) rated 

- Low package inductance 

- Fast intrinsic Rectifier 

## **Applications** 

## **Symbol Test Conditions** 

## **Characteristic Values** 

|**min.**|**typ.**|**max.**|
|---|---|---|
|**VDSS**<br>VGS = 0 V, ID= 3 mA<br>300<br>**VGH(th)**<br>VDS = VGS, ID= 8 mA<br>2||V<br>4<br>V|
|**IGSS**<br>VGS =±20 VDC, VDS= 0||±200<br>nA|
|**IDSS**<br>VDS =  VDSS<br>TJ=   25°C<br>VGS = 0 V<br>TJ= 125°C||100<br>µA<br>2<br>mA|
|**RDS(on)**<br>VGS = 10 V, ID= 0.5 • ID25<br>Pulse test, t≤300µs,<br>duty cycle d≤2 %||22 mΩ|



- DC-DC converters 

- Battery chargers 

- Switched-mode and resonant-mode power supplies 

- DC choppers 

- Temperature and lighting controls 

## **Advantages** 

- Easy to mount 

- Space savings 

- High power density 

© 2003 IXYS All rights reserved 

DS98531F(01/03) 

**IXFN  130N30** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|
|---|---|---|
|**gfs**<br>VDS<br>= 10 V; ID= 60A, pulse test<br>70<br>|92<br>|S<br>|
|**Ciss**<br>**Coss**<br>VGS = 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|14500<br>2650<br>610|pF<br>pF<br>pF|
|**td(on)**<br>**tr**<br>VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**td(off)**<br>RG<br>= 1Ω(External),<br>**tf**|45<br>75<br>130<br>31|ns<br>ns<br>ns<br>ns|
|**QG(on)**<br>**QGS**<br>VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**QGD**|380<br>95<br>180|nC<br>nC<br>nC|
|**RthJC**<br>**RthCK**|0.05|0.18<br>K/W<br>K/W|



**miniBLOC, SOT-227 B** 

|M4 screws (4x) supplied|M4 screws (4x) supplied|M4 screws (4x) supplied|
|---|---|---|
|Dim.<br>|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|A<br>3<br>B|1.50<br>31.88<br>7.80<br>8.20|1.240<br>1.255<br>0.307<br>0.323|
|C<br>D|4.09<br>4.29<br>4.09<br>4.29|0.161<br>0.169<br>0.161<br>0.169|
|E<br>F<br>1|4.09<br>4.29<br>4.91<br>15.11|0.161<br>0.169<br>0.587<br>0.595|
|G<br>3<br>H<br>3|0.12<br>30.30<br>8.00<br>38.23|1.186<br>1.193<br>1.496<br>1.505|
|J<br>1<br>K|1.68<br>12.22<br>8.92<br>9.60|0.460<br>0.481<br>0.351<br>0.378|
|L<br>M<br>1|0.76<br>0.84<br>2.60<br>12.85|0.030<br>0.033<br>0.496<br>0.506|
|N<br>2<br>O|5.15<br>25.42<br>1.98<br>2.13|0.990<br>1.001<br>0.078<br>0.084|
|P<br>Q<br>2|4.95<br>5.97<br>6.54<br>26.90|0.195<br>0.235<br>1.045<br>1.059|
|R<br>S|3.94<br>4.42<br>4.72<br>4.85|0.155<br>0.174<br>0.186<br>0.191|
|T<br>2<br>U<br>-|4.59<br>25.07<br>0.05<br>0.1<br>|0.968<br>0.987<br>-0.002<br>0.004|



|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br><br>|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br><br>|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br><br>|
|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**min.**|**typ.**|**max.**|
|**IS**<br>VGS = 0 V||130<br>A|
|**ISM**<br>Repetitive;<br>pulse width limited by TJM||520<br>A|
|**VSD**<br>IF = 100A, VGS= 0 V,<br>Pulse test, t≤300µs, duty cycle d≤2 %||1.5<br>V|
|**trr**<br>IF = 30A, -di/dt = 100 A/µs, VR= 100 V<br>**QRM**<br>**IRM**|0.8<br>8|250<br>ns<br>µC<br>A|



IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 

**IXFN  130N30** 

**==> picture [225 x 628] intentionally omitted <==**

**----- Start of picture text -----**<br>
250<br>TJ=25 [O] C VGS=10V<br>         9V<br>200          8V<br>         7V 6V<br>150<br>100<br>5V<br>50<br>0<br>0 4 8 12 16<br>VDS - Volts<br>Figure 1. Output Characteristics at 25 [O] C<br>2.4<br>2.2 VGS = 10V<br>TJ = 125 [O] C<br>2.0<br>1.8<br>1.6<br>1.4 TJ = 25 [O] C<br>1.2<br>1.0<br>0.8<br>0 50 100 150 200 250<br>ID - Amperes<br>Figure 3. RDS(on) normalized to 0.5 ID25  value<br> vs. I<br>D<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees C<br> - Amperes<br>ID<br> - Normalized<br>DS(ON)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


Figure 5. Drain Current vs. Case Temperature 

**==> picture [222 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>VGS=10V<br>TJ=125 [O] C          9V<br>160          8V<br>         7V 6V<br>120<br>5V<br>80<br>40<br>0<br>0 4 8 12 16 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


Figure 2. Output Characteristics at 125[O] C 

**==> picture [226 x 406] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.2<br>VGS=10V<br>2.0<br>1.8<br>ID=120A<br>1.6<br>ID=60A<br>1.4<br>1.2<br>1.0<br>25 50 75 100 125 150<br>TJ - Degrees C<br>Figure 4. RDS(on) normalized to 0.5 ID25<br>value vs. T<br>J<br>120<br>90<br>TJ = 125 [o] C<br>60<br>30 TJ = 25 [o] C<br>0<br>2 3 4 5 6<br>VGS - Volts<br> - Normalized<br>DS(ON)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


Figure 6. Admittance Curves 

© 2003 IXYS All rights reserved 

**IXFN  130N30** 

**==> picture [492 x 615] intentionally omitted <==**

**----- Start of picture text -----**<br>
12 18000<br>10 VVds=300VDS  ID =30A= 150V [=  65A] 15000 CISS<br>IG =10mA [= 10mA] f = 100KHz<br>8 12000<br>6 9000<br>4 6000<br>COSS<br>2 3000<br>CRSS<br>0 0<br>0 100 200 300 400 500 0 5 10 15 20 25 30 35 40<br>Gate Charge - nC VDS - Volts<br>Figure 7. Gate Charge Figure 8. Capacitance Curves<br>200<br>160<br>120<br>TJ = 125J = 125= 125 [[O]] C<br>80<br>TJ = 25J = 25= 25 [[O]] C<br>40<br>0<br>0.3 0.6 0.9 1.2 1.5 1.8<br>VSD -  Volts<br>Figure 9. Forward Voltage Drop of the<br>Intrinsic Diode<br>0.100<br>0.010<br>Single Pulse<br>0.001<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>Pulse Width - Seconds<br> - Volts<br>GS<br>V<br>Capacitance - pF<br>D<br> - K/W<br>JC<br>R(th)<br>**----- End of picture text -----**<br>


**==> picture [216 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>160<br>120<br>TJ = 125J = 125= 125 [[O]] C<br>80<br>TJ = 25J = 25= 25 [[O]] C<br>40<br>0<br>0.3 0.6 0.9 1.2 1.5 1.8<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


Figure 10. Transient Thermal Resistance 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFN130N30/power-mosfet-n-channel-300-v-130-a-0022-ohm-isotop)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixfn130n30/mosfet-n-sot-227b/dp/7347995)
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