# Power MOSFET, N Channel, 200 V, 120 A, 0.017 ohm, ISOTOP, Module

![Product image](https://novapart.co/image/farnell:9359257/)

**URL**: https://novapart.co/products/IXFN120N20/power-mosfet-n-channel-200-v-120-a-0017-ohm-isotop
**SKU**: IXFN120N20
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €20.3100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 600W |
| Transistor Mounting | Module |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 600W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.017ohm |
| Transistor Case Style | ISOTOP |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 0.017ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9359257/)

## **IXFN 120N20** 

## **HiPerFET[TM] Power MOSFETs** 

## Single MOSFET Die 

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**<br>**VDGR**<br>**VGS**<br>**VGSM**<br>a<br>a|TJ = 25°C to 150°C<br>TJ = 25°C to 150°C; RGS= 1 MΩ<br>Continuous<br>Transient<br>a<br>a|200<br>200<br>±20<br>±30<br>a<br>a|V<br>V<br>V<br>V<br>a<br>a|
|**ID25**|TC = 25°C|120|A|
|**IDM**|TC = 25°C, pulse width limited by TJM|480|A|
|**IAR**|TC = 25°C|120|A|
|**EAR**<br>**EAS**|TC = 25°C<br>TC = 25°C|64<br>3|mJ<br>J|
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS<br>TJ ≤150°C, RG= 2Ω|5|V/ns|
|**PD**|TC = 25°C|600|W|
|**TJ**||-55 ... +150|°C|
|**TJM**<br>**Tstg**||150<br>-55 ... +150|°C<br>°C|
|**TL**<br>**VISOL**|1.6 mm (0.063 in.) from case for 10 s<br>50/60 Hz, RMS<br>t = 1 min<br>IISOL ≤1 mA<br>t = 1 s|-<br>2500<br>3000|°C<br>V~<br>V~|
|**Md**|Mounting torque|1.5/13  Nm/lb.in.|1.5/13  Nm/lb.in.|
|**Weight**|Terminal connection torque|1.5/13 <br>30|Nm/lb.in.<br>g|



**V = 200 V DSS I = 120 A D25 R = 17 m Ω DS(on)** 

## **t ≤ 250 ns** rr 

**miniBLOC, SOT-227 B (IXFN) E153432** S 

**==> picture [69 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>D<br>**----- End of picture text -----**<br>


G = Gate D = Drain 

S = Source 

Either Source terminal at miniBLOC can be used as Main or Kelvin Source 

## **Features** 

- Encapsulating  epoxy  meets UL 94 V-0, flammability classification 

- International standard package 

- miniBLOC, with Aluminium nitride isolation 

- Low RDS (on) HDMOS[TM] process 

- Rugged polysilicon gate cell structure 

- Unclamped Inductive Switching (UIS) rated 

- Low package inductance 

- Fast intrinsic Rectifier 

## **Applications** 

**Symbol Test Conditions Characteristic Values** (TJ = 25°C, unless otherwise specified) **min. typ. max. VDSS** VGS = 0 V, ID = 3mA 200 V **VGS(th)** VDS = VGS, ID = 8mA 2 || 4   V **IGSS** VGS  = ±20 V, VDS = 0 ±200 nA = **IDSS** VDS  =  VDSS TJ  =   25°C 100  µA VGS   = 0 V TJ  = 125°C = 2 mA **RDS(on)** VGS  = 10 V, ID = 0.5 • ID25 17 mΩ Note 1 ~ 

- DC-DC converters 

- Battery chargers 

- Switched-mode and resonant-mode power supplies 

- DC choppers 

- Temperature and lighting controls 

- Low voltage relays 

## **Advantages** 

- Easy to mount 

- Space savings 

- High power density 

© 2003 IXYS All rights reserved 

DS96538D(03/03) 

**IXFN  120N20** 

## **Symbol Test Conditions** 

## **Characteristic Values** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**min.**<br>**typ.**<br>**max.**|||
|**gfs**<br>VDS = 10 V; ID= 0.5 • ID25<br>Note 1<br>40<br>|77<br>|S<br>|
|**Ciss**<br>**Coss**<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>**Crss**|9100<br>2200<br>1000|pF<br>pF<br>pF|
|**td(on)**<br>**tr**<br>VGS= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**td(off)**<br>RG= 1Ω(External),<br>**tf**|42<br>55<br>110<br>40|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>**Qgs**<br>VGS= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>**Qgd**|360<br>50<br>160|nC<br>nC<br>nC|
|**RthJC**||0.22<br>K/W|
|**RthCK**|0.05|K/W|



|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br>|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br>|**Source-Drain Diode**<br>**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)<br><br> <br>|
|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**min.**|**typ.**|**max.**|
|**IS**<br>VGS = 0 V||120<br>A|
|**ISM**<br>Repetitive;<br>pulse width limited by TJM||480<br>A|
|**VSD**<br>IF= IS, VGS= 0 V, Note 1||1.5<br>V|
|**trr**<br>**QRM**<br>**IRM**<br>IF= 50A,-di/dt = 100 A/µs, VR= 100 V|1.1<br>13|250<br>ns<br>µC<br>A|



|**miniBLOC, SOT-227**|**miniBLOC, SOT-227**|**miniBLOC, SOT-227**|**miniBLOC, SOT-227**|**B**||||
|---|---|---|---|---|---|---|---|
|M4 screws (4x) supplied||||||||
||Dim.|Millimeter|||Inches|||
|||Min.|Max.|Min.||Max.||
||A|31.50|31.88|1.240||1.255||
||B|7.80|8.20|0.307||0.323||
||C|4.09|4.29|0.161||0.169||
||D|4.09|4.29|0.161||0.169||
||E|4.09|4.29|0.161||0.169||
||F|14.91|15.11|0.587||0.595||
||G|30.12|30.30|1.186||1.193||
||H|38.00|38.23|1.496||1.505||
||J|11.68|12.22|0.460||0.481||
||K|8.92|9.60|0.351||0.378||
||L|0.76|0.84|0.030||0.033||
||M|12.60|12.85|0.496||0.506||
||N|25.15|25.42|0.990||1.001||
||O|1.98|2.13|0.078||0.084||
||P|4.95|5.97|0.195||0.235||
||Q|26.54|26.90|1.045||1.059||
||R|3.94|4.42|0.155||0.174||
||S|4.72|4.85|0.186||0.191||
||T|24.59|25.07|0.968||0.987||
||U|-0.05|0.1|-0.002||0.004||
|||||||||



Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 

IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 

**IXFN  120N20** 

**==> picture [235 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics<br>@ 25 Deg. C<br>120<br>VGS  = 1 0V<br>100             9V<br>            8V<br>80             7V 6V<br>60<br>5V<br>40<br>20<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [235 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics<br>@ 125 Deg. C<br>120<br>VGS  = 1 0V<br>100             9V<br>            8V<br>            7V 6V<br>80<br>60<br>40<br>5V<br>20<br>0<br>0 1 2 3 4 5<br>V DS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [235 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 5. RDS(on) Normalized to ID25<br> Value vs. ID<br>2.2<br>VGS = 1 0V<br>1.9<br>TJ = 1 25ºC<br>1.6<br>1.3<br>TJ = 25ºC<br>1<br>0.7<br>0 30 60 90 120 150 180<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ 25 deg. C** 

**==> picture [197 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>150             9V VGS  = 1 0V 7V<br>            8V<br>120<br>6V<br>90<br>60<br>5V<br>30<br>0<br>0 1 2 3 4 5<br>V DS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [234 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID25 Value vs.<br>Junction Temperature<br>2.5<br>2.2 VGS = 1 0V<br>1.9<br>1.6<br>ID = 1 20A<br>1.3<br>ID = 60A<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**==> picture [234 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 6. Drain Current vs. Case<br>Temperature<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2003 IXYS All rights reserved 

**IXFN  120N20** 

**Fig. 7. Input Admittance** 

**==> picture [205 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>120<br>90<br>60  TJ = -40ºC<br>          25ºC<br>        1 25ºC<br>30<br>0<br>3 3.5 4 4.5 5 5.5 6 6.5<br>V GS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Source Current vs. Source-To-Drain Voltage** 

**==> picture [205 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>160<br>120<br>80 TJ = 1 25ºC<br>TJ = 25ºC<br>40<br>0<br>0.4 0.55 0.7 0.85 1 1.15 1.3<br>V SD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [204 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>Ciss<br>f = 1 M Hz<br>Coss<br>1000<br>Crss<br>100<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - pF<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

**==> picture [206 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>100 TJ = 25ºC<br>80<br>60<br>40<br>20<br>0<br>0 30 60 90 120 150 180<br>ID - Amperes<br> - Siemens<br>fs<br>G<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [201 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>VDS  = 1 00V<br>8 ID = 60A<br>IG = 1 0mA<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300<br>QG - nanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [234 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12. Maximum Transient Thermal<br>Resistance<br>1<br>0.1<br>0.01<br>1 10 100 1000<br>Pulse Width - milliseconds<br>(ºC/W)<br> -<br>(th)JC<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFN120N20/power-mosfet-n-channel-200-v-120-a-0017-ohm-isotop)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixfn120n20/mosfet-n-sot-227b/dp/9359257)
---

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