# Power MOSFET, N Channel, 500 V, 78 A, 0.068 ohm, TO-264, Through Hole

![Product image](https://novapart.co/image/farnell:2674757/)

**URL**: https://novapart.co/products/IXFK78N50P3/power-mosfet-n-channel-500-v-78-a-0068-ohm-to-264
**SKU**: IXFK78N50P3
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €11.9500
**Stock**: 10+
**Lead Time**: 267 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:78A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar3 HiPerFET |
| Qualification | - |
| Power Dissipation | 1.13kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 78A |
| Drain Source On State Resistance | 0.068ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2674757/)

## **Polar3[TM ] HiPerFET[TM] Power MOSFET** 

## **IXFK78N50P3 IXFX78N50P3** 

|N-Channel Enhancement Mode|N-Channel Enhancement Mode|||
|---|---|---|---|
|Avalanche Rated|Avalanche Rated|||
|Fast Intrinsic Diode||||
|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~oo~~||||
|**VDSS**|TJ = 25C to 150C|500|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|500|V|
|**VGSS**|Continuous|30|V|
|**VGSM**|Transient|40|V|
|**ID25**|TC = 25C|78|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|200|A|
|**IA**|TC = 25C|39|A|
|**EAS**|TC = 25C|1.5|J|
|**PD**|TC = 25C|1130|W|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C                                      35                V/ns|150°C                                      35                V/ns|150°C                                      35                V/ns|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**<br>**TL**|Maximum Lead Temperature for Soldering                    300|-55 ... +150<br>Maximum Lead Temperature for Soldering                    300|C<br>°C|
|**TSOLD**<br>**Md**<br>**FC**|Plastic Body for 10s<br>260                    °C<br>Mounting Torque  (TO-264)<br>Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|260                    °C<br>1.13/10<br>Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|260                    °C<br>Nm/lb.in<br>Mounting Force    (PLUS247)                    20..120 /4.5..27                 N/lb|
|**Weight**|TO-264<br>PLUS247|10<br>6|g<br>6g|



**==> picture [118 x 306] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =    500V<br>DSS<br>I =    78A<br>D25<br>R      68m <br>DS(on)<br>t      250ns<br>rr<br>TO-264<br>(IXFK)<br>G<br>D<br>S<br>Tab<br>PLUS247<br>(IXFX)<br>G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- Dynamic dv/dt Rating 

- Avalanche Rated 

- Fast Intrinsic Diode 

- Low QG 

- Low R DS(on) 

- Low Drain-to-Tab Capacitance 

- Low Package Inductance 

## **Advantages** 

|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA                                        500||V|
|**VGS(th)**<br>VDS = VGS, ID= 4mA                                       3.0|5.0|5.0<br>V|
|**IGSS**<br>VGS =30V, VDS= 0V||200<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>3    mA|25<br>3    mA|25<br>A<br>3    mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1|68   m|68   m|



- Easy to Mount 

- Space Savings 

## **Applications** 

>  DC-DC Converters 

- Battery Chargers 

- Switch-Mode and Resonant-Mode 

- Power Supplies 

- Uninterrupted Power Supplies 

- AC Motor Drives 

- High Speed Power Switching 

- Applications 

©2019 IXYS CORPORATION, All Rights Reserved 

DS100313B(6/19) 

**IXFK78N50P3 IXFX78N50P3** 

|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                            Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                   40|75|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|9.9<br>970<br>5.0|nF<br>pF<br>pF|
|**RGi**Gate Input Resistance|1.1||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|30<br>10<br>60<br>7|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|147<br>50<br>38|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.15|0.11C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**|**Max.**|
|**IS**<br>VGS = 0V|||78<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|||310<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|||1.5<br>V|
|**trr**<br>**QRM**<br>**IRM**|<br> <br> <br>IF= 39A, -di/dt = 100A/s<br>V**R**= 100V, V**GS**= 0V|<br>1.2<br>13.0|250     ns<br>μC<br>A|
|||||



Note 1. Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFK78N50P3 IXFX78N50P3** 

**==> picture [538 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>80 160<br>V GS = 10V VGS = 10V<br>70          7V     140           8V<br>60 120<br>7V<br>50 100<br>40 6V 80<br>30 60<br>6V<br>20 40<br>10 20<br>5V 5V<br>0 0<br>0 1 2 3 4 5 6 0 5 10 15 20 25<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125[o] C** 

**==> picture [265 x 402] intentionally omitted <==**

**----- Start of picture text -----**<br>
80<br>VGS = 10V<br>70           7V<br>60<br>6V<br>50<br>40<br>30<br>20<br>5V<br>10<br>4V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 39A Value vs.<br>Drain Current<br>3.2<br>3.0 VGS = 10V<br>2.8<br>2.6 T J  = 125 [o] C<br>2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2 TJ = 25 [o] C<br>1.0<br>0.8<br>0 20 40 60 80 100 120 140 160<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**==> picture [266 x 427] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 39A Value vs.<br>Junction Temperature<br>3.4<br>3.0 VGS = 10V<br>2.6<br>I D = 78A<br>2.2<br>I D = 39A<br>1.8<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs. Case Temperature<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


©2019 IXYS CORPORATION, All Rights Reserved 

**IXFK78N50P3 IXFX78N50P3** 

**==> picture [260 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>90<br>80<br>70 T J = 125 [o] C<br>          25 [o] C<br>60<br>        - 40 [o] C<br>50<br>40<br>30<br>20<br>10<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [260 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>240<br>200<br>160<br>120<br>80<br>TTJJ = 125= 125 [o][o] CC<br>TJ = 25 [o] C<br>40<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**==> picture [258 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000<br>f = 1 MHz<br>Ciss<br>10,000<br>1,000<br>Coss<br>100<br>10 Crss<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**==> picture [260 x 638] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>140<br>TJ = - 40 [o] C<br>120<br>100<br>25 [o] C<br>80<br>125 [o] C<br>60<br>40<br>20<br>0<br>0 10 20 30 40 50 60 70 80 90<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  VDS = 250V<br> I D = 39A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>QG - NanoCoulombs<br>Fig. 12. Forward-Bias Safe Operating Area<br>1000<br>RDS(on) Limit<br>100 100μs<br>10<br>TJ = 150 [o] C<br>TC = 25 [o] C<br>Single Pulse<br>1ms<br>1<br>10 100 1,000<br>VDS - Volts<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFK78N50P3 IXFX78N50P3** 

**Fig. 13. Maximum Transient Thermal Impedance** 

1 

**==> picture [525 x 293] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>AAAAA<br>0.2<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


©2019 IXYS CORPORATION, All Rights Reserved 

**IXFK78N50P3 IXFX78N50P3** 

**==> picture [190 x 531] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-264 Outline<br>FS es<br>—n<br>ILD dORG<br>|<br>—t te<br>Le 1  = Gate<br>2,4  = Drain<br>3  =  Source<br>> (OL eon x<br>I {|<br> PLUS247 [[TM]]  Outline<br>‘The pate ey<br>r<br>T<br>Hear 3 eae<br>1  = Gate<br>2,4  = Drain<br>3  =  Source<br>**----- End of picture text -----**<br>


## **PLUS247[[TM]] Outline** 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_78N50P3(K8-N38) 3-15-11 

**IXFK78N50P3 IXFX78N50P3** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

©2019 IXYS CORPORATION, All Rights Reserved 



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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixfk78n50p3/mosfet-n-ch-500v-78a-to-264/dp/2674757)
---

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