# Power MOSFET, N Channel, 800 V, 44 A, 0.19 ohm, TO-264, Through Hole

![Product image](https://novapart.co/image/farnell:1427311/)

**URL**: https://novapart.co/products/IXFK44N80P/power-mosfet-n-channel-800-v-44-a-019-ohm-to-264
**SKU**: IXFK44N80P
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €13.8700
**Stock**: 200+
**Lead Time**: 197 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.2kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 44A |
| Drain Source On State Resistance | 0.19ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1427311/)

## **Polar[TM]** 

## **IXFK44N80P IXFX44N80P** 

## **HiperFET[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|800|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|800|V|
|**VGSS**|Continuous|30|V|
|**VGSM**|Transient|40|V|
|**ID25**|TC = 25C|44|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|100|A|
|**IA**|TC = 25C|22|A|
|**EAS**|TC = 25C|3.4|J|
|**dv/dt**|IS<br>IDM,  VDD VDSS, TJ 150C|10|V/ns|
|**PD**|TC = 25C|1040|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                     300|Maximum Lead Temperature for Soldering                     300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                               260|1.6 mm (0.062in.) from Case for 10s                               260|°C|
|**Md**|Mounting Torque  (TO-264)|1.13/10|Nm/lb.in|
|**FC**|Mounting Force    (PLUS247)                      20..120 /4.5..27                  N/lb|Mounting Force    (PLUS247)                      20..120 /4.5..27                  N/lb|Mounting Force    (PLUS247)                      20..120 /4.5..27                  N/lb|
|**Weight**|TO-264|10|g|
||PLUS247|6|6g|



**V =    800V DSS I =    44A D25 R  190m  DS(on)** 

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TO-264 (IXFK)<br>G<br>D<br>S<br>Tab<br>**----- End of picture text -----**<br>


## **PLUS247 (IXFX)** 

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**----- Start of picture text -----**<br>
G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- Fast Intrinsic Diode 

- Avalanche Rated 

- Low R DS(on) 

- Low Package Inductance 

## **Advantages** 

|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 800μA                                       800<br>~~|~~|~~|~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 8mA                                          3.0                                  5.0<br>~~|~~<br>~~|~~|= 8mA                                          3.0                                  5.0<br>~~|~~<br>~~|~~<br>~~|~~|= 8mA                                          3.0                                  5.0<br>V|
|**IGSS**<br>VGS =30V, VDS= 0V<br>~~|~~<br>~~|~~|<br>~~|~~<br>~~|~~|200<br>nA|
|**IDSS**<br>VDS =  VDSS, VGS= 0V<br>TJ= 125C<br>1.5    mA<br>~~|~~|50<br>1.5    mA<br>~~|_~~|50A<br>1.5    mA|
|**RDS(on)**<br>VGS = 10V, ID= 22A, Note 1|190   m<br>~~|~~|190   m|



- Easy to Mount 

- Space Savings 

- High Power Density 

© 2018 IXYS CORPORATION, All Rights Reserved 

DS99478F(12/18) 

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IXFK44N80P<br>IXFX44N80P<br>**----- End of picture text -----**<br>


|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Min.       Typ.        Max.**|**Min.       Typ.        Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Min.       Typ.        Max.**|**Min.       Typ.        Max.**|
|**gfs**<br>VDS= 20V, ID= 22A,  Note 1                              27              43|= 22A,  Note 1                              27              43|S|
|**Ciss**<br>12<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>910<br>**Crss**<br>30|12<br>910<br>30|nF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br>22<br>**td(off)**<br>75<br>**tf**<br>27<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>RG= 1(External)|28<br>22<br>75<br>27<br>~~_~~|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>198<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>67<br>**Qgd**<br>65|198<br>67<br>65<br>~~_~~|nC<br>nC<br>nC|
|**RthJC**<br>0.12<br>**RthCS**<br>0.15|0.12<br>0.15<br>~~a~~|0.12C/W<br>C/W|



## **TO-264 Outline** 

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PINS:<br>1    - Gate<br>2,4 - Drain<br>3    - Source<br>**----- End of picture text -----**<br>


## **Source-Drain Diode** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|**Min.     Typ.       Max.**|
|**IS**<br>VGS= 0V|44     A|44     A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM|100     A|100     A|
|**VSD**<br>IF= 44A, VGS= 0V,  Note 1|1.5    V|1.5    V|
|**trr**<br>250   ns<br>**IRM**<br>8.0                   A<br>**QRM**<br>0.8                μC<br>IF= 22A, VGS= 0V<br>-di/dt = 100A/s<br>VR= 100V|250   ns<br>8.0                   A<br>0.8                μC|250   ns<br>8.0                   A<br>0.8                μC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

## **PLUS247[TM] Outline** 

PINS: 1    - Gate 2,4 - Drain 3    - Source 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFK44N80P IXFX44N80P** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>45 100<br>40 V GS = 10V  90 VGS = 10V<br>80<br>35<br>6V 7V<br>70<br>30<br>60<br>25 6V<br>50<br>20<br>40<br>15<br>30<br>10<br>20<br>5V 5V<br>5 10<br>0 0<br>0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125[o] C** 

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45<br>V GS = 10V<br>40<br>6V<br>35<br>30<br>25<br>20<br>5V<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 22A Value vs.<br>Drain Current<br>2.4<br>2.2 VGS = 10V<br>TJ = 125 [o] C<br>2.0<br>1.8<br>1.6<br>TJ = 25 [o] C<br>1.4<br>1.2<br>1.0<br>0.8<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 22A Value vs.<br>Junction Temperature<br>2.6<br>VGS = 10V<br>2.2<br>I  D  = 44A<br>1.8<br>I D = 22A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 6. Maximum Drain Current vs. Case Temperature<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

**IXFK44N80P IXFX44N80P** 

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Fig. 7. Input Admittance<br>80<br>70<br>60<br>50<br>40<br>TJ = 125 [o] C<br>          25 [o] C<br>30<br>- 40 [o] C<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>90<br>T J = - 40 [o] C<br>80<br>70<br>25 [o] C<br>60<br>50 125 [o] C<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  VDSDS = 400V<br> I  D  = 22A<br>8<br> I G G = 10mA    10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>140 10<br>9  VDSDS = 400V<br>120  I  D  = 22A<br>8<br> I G G = 10mA    10mA<br>100 7<br>6<br>80<br>5<br>60<br>4<br>TJ = 125 [o] C<br>40 3<br>T J   = 25 [o] C<br>2<br>20<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 200<br>VSD - Volts QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 1000<br>f = 1 MHz<br>RDS(on) Limit<br>Ciss<br>10,000 100<br>25 μs<br>Coss 100μs<br>1,000 10<br>100 1<br>TJ = 150 [o] C 1m s<br>Crss T C  = 25 [o] C<br>Single Pulse  10 ms<br>DC<br>10 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Volts<br> - Amperes GS<br>IS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFK44N80P IXFX44N80P** 

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Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF:F_44N80P (93-788)12-14-18-B 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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---

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