# MOSFET, N-CH, 250V, 180A, TO-264

![Product image](https://novapart.co/image/farnell:3949049/)

**URL**: https://novapart.co/products/IXFK180N25T./mosfet-n-ch-250v-180a-to-264
**SKU**: IXFK180N25T.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €10.0900
**Stock**: 10+
**Lead Time**: 200 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | GigaMOS Series |
| Qualification | - |
| Power Dissipation | 1.39kW |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-264 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 180A |
| Drain Source On State Resistance | 0.0129ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3949049/)

## Preliminary Technical Information 

## **GigaMOS[TM] Power MOSFET** 

## **IXFK180N25T IXFX180N25T** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~——~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~——~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~——~~|**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>~~——~~|
|---|---|---|---|
|**VDSS**<br>**VDGR**|TJ = 25C to 150C<br>TJ = 25C to 150C, RGS= 1M|250<br>250|V<br>V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C|180|A|
|**IL(RMS)**|External Lead Current Limit|160|A|
|**IDM**<br>TC = 25C, Pulse Width Limited by TJM<br>500<br>A<br>~~OO~~||||
|**IA**<br>**EAS**|TC = 25C<br>TC = 25C|90<br>5|A<br>J|
|**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150°C                                      20                V/ns|150°C                                      20                V/ns|150°C                                      20                V/ns|
|**PD**|TC = 25C|1390|W|
|**TJ**||-55 ... +150|C|
|**TJM**||150|C|
|**Tstg**||-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**<br>**FC**|Mounting Torque  (TO-264)<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                N/lb|1.13/10<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                N/lb|Nm/lb.in<br>Mounting Force    (PLUS247)                     20..120 /4.5..27                N/lb|
|**Weight**|TO-264<br>PLUS247|10<br>6|g<br>6g|



**==> picture [130 x 324] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =    250V<br>DSS<br>I =    180A<br>D25<br>R      12.9m <br>DS(on)<br>t      200ns<br>rr<br>TO-264 (IXFK)<br>G<br>D<br>S<br>Tab<br>PLUS247 (IXFX)<br>G<br>D<br>S Tab<br>G  =  Gate D     =  Drain<br>S  =  Source Tab  =  Drain<br>**----- End of picture text -----**<br>


## **Features** 

- International Standard Packages 

- High Current Handling Capability 

- Fast Intrinsic Diode 

- Avalanche Rated 

- Low R DS(on) 

## **Advantages** 

|**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|**Min.        Typ.        Max.**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.        Typ.        Max.**<br>~~|~~|**Min.        Typ.        Max.**<br>~~||~~|**Min.        Typ.        Max.**|
|**BVDSS**<br>VGS = 0V, ID= 3mA                                        250<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 8mA                                        3.0<br>~~|~~<br>~~|~~|5.0<br>~~| |~~<br>~~||~~|5.0<br>V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>~~|~~|<br>~~| |~~<br>~~||~~|200<br>nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>2.5    mA<br>~~|~~|50<br>2.5    mA<br>~~_~~<br>~~||~~|50<br>A<br>2.5    mA|
|**RDS(on)**<br>VGS = 10V, ID= 90A, Note 1<br>~~|~~|12.9   m<br>~~||~~|12.9   m|



- Easy to Mount 

- Space Savings 

- High Power Density 

## **Applications** 

>  DC-DC Converters 

- Battery Chargers 

- Switched-Mode and Resonant-Mode Power Supplies 

- DC Choppers 

- AC Motor Drives 

- Uninterruptible Power Supplies 

- High Speed Power Switching Applications 

DS100129A(09/14) 

© 2014 IXYS CORPORATION, All Rights Reserved 

## **IXFK180N25T IXFX180N25T** 

|**Symbol**||**Test Conditions                                            Characteristic Values**|**Test Conditions                                            Characteristic Values**|**Test Conditions                                            Characteristic Values**|**Test Conditions                                            Characteristic Values**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|**TO-264 AA Outline**|||
|---|---|---|---|---|---|---|---|---|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.         Typ.         Max.**|||**Min.         Typ.         Max.**|**Min.         Typ.         Max.**|**Min.         Typ.         Max.**|||||||
|**gfs**||VDS= 10V, ID= 60A, Note 1                         90             150|= 60A, Note 1                         90             150|= 60A, Note 1                         90             150|S|||||||
|**Ciss**<br>**Coss**<br>**Crss**<br>**RGi**|**Gi**Gate Input Resistance                                                                 1.1<br>~~|~~|VGS= 0V, VDS= 25V, f = 1MHz<br>Gate Input Resistance                                                                 1.1|23.8<br>2070<br>47<br>Gate Input Resistance                                                                 1.1|23.8<br>2070<br>47<br>Gate Input Resistance                                                                 1.1<br>~~-~~|nF<br>pF<br>pF<br>Gate Input Resistance                                                                 1.1|||||||
|**td(on)**||35<br>**Resistive Switching Times**|35|35|ns||||Terminals:<br>1 - Gate<br>2 - Drain|||
|**tr**<br>**td(off)**<br>**tf**||52<br>88<br>VGS= 15V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|52<br>88<br>20|52<br>88<br>20|ns<br>ns<br>ns||A<br>Dim.|Millimeter<br>Min.<br>Max.<br>4.82<br>5.13|3 - Source<br>4 - Drain<br>Inches<br>Min.<br>Max.<br>.190<br>.202|||
||||||||A1|2.54<br>2.89|.100|.114||
|**Qg(on)**|||364|364|nC||A2<br>b|2.00<br>2.10<br>1.12<br>1.42|.079<br>.044|.083<br>.056||
|**Qgs**||VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|137|137|nC||b1<br>b2|2.39<br>2.69<br>2.90<br>3.09|.094<br>.114|.106<br>.122||
|**Qgd**|||60|60|nC||c<br>D|0.53<br>0.83<br>25.91<br>26.16|.021<br>1.020|.033<br>1.030||
|**RthJC**|||0.09|0.09|0.09C/W||E<br>e|19.81<br>19.96<br>5.46 BSC|.780<br>.215 BSC|.786<br>.215 BSC||
|**RthCS**|||0.15|0.15C/W|||J|0.00<br>0.25|.000|.010||
||||||||K|0.00<br>0.25|.000|.010||
||||||||L|20.32<br>20.83|.800|.820||
||||||||L1|2.29<br>2.59|.090|.102||
||||||||P|3.17<br>3.66|.125|.144||
||||||||Q|6.07<br>6.27|.239|.247||
||||||||Q1|8.38<br>8.69|.330|.342||
|**Source-Drain Diode**|||||||R<br>R1|3.81<br>4.32<br>1.78<br>2.29|.150<br>.070|.170<br>.090||
|**Symbol**||**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||S|6.04<br>6.30|.238|.248||
|**Symbol**||**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||T|1.57<br>1.83|.062|.072||



|**IS**<br>VGS = 0V<br>**I**<br>Repetitive, Pulse Width Limited by T|180<br>720|
|---|---|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM<br>**VSD**<br>IF= 100A, VGS= 0V, Note 1|720<br>1.4|
|**SD**<br>FGS<br>**trr**<br>200     ns<br>**QRM**<br>0.77<br>**IRM**<br>11<br>IF= 90A, -di/dt = 100A/s<br>V**R**= 75V, V**GS**= 0V|200     ns<br>0.77<br>11|



## **PLUS 247[TM] Outline** 

Note   1:   Pulse test, t  300s, duty cycle, d 2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>A1<br>A2|4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16|.190<br>.205<br>.090<br>.100<br>.075<br>.085|
|b<br>b1<br>b2|1.14<br>1.40<br>1.91<br>2.13<br>2.92<br>3.12|.045<br>.055<br>.075<br>.084<br>.115<br>.123|
|C<br>D<br>E|0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13|.024<br>.031<br>.819<br>.840<br>.620<br>.635|
|e<br>L<br>L1|5.45 BSC<br>19.81<br>20.32<br>3.81<br>4.32|.215 BSC<br>.780<br>.800<br>.150<br>.170|
|Q<br>R|5.59<br>6.20<br>4.32<br>4.83|.220 0.244<br>.170<br>.190|



IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFK180N25T IXFX180N25T** 

**==> picture [264 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>180<br>VGS = 10V<br>160            8V<br>140 7V<br>120<br>100<br>80 6V<br>60<br>40<br>20<br>5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

**==> picture [253 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
350<br>VGS = 10V<br>          8V<br>300<br>7V<br>250<br>200<br>150<br>100 6V<br>50<br>5V<br>0<br>0 2 4 6 8 10 12<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature** 

**==> picture [530 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
180 2.6<br>160 V            8V GS = 10V 2.4 V GS = 10V<br>           7V  2.2<br>140<br>2.0<br>120 6V 1.8<br>I D = 180A<br>100 1.6<br>80 1.4 I D = 90A<br>1.2<br>60<br>1.0<br>40 5V<br>0.8<br>20 0.6<br>4V<br>0 0.4<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Fig. 6. Maximum Drain Current vs.<br> Drain Current Case Temperature<br>2.4 180<br>2.2 VGS = 10V  160<br>External Lead Current Limit<br>2.0 TJ = 125ºC 140<br>120<br>1.8<br>100<br>1.6<br>80<br>1.4<br>60<br>1.2 TJ = 25ºC<br>40<br>1.0 20<br>0.8 0<br>0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

**IXFK180N25T IXFX180N25T** 

**==> picture [264 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>200<br>180<br>160<br>140<br>120<br>100<br>80 TJ = 125ºC 25ºC<br>- 40ºC<br>60<br>40<br>20<br>0<br>3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Forward Voltage Drop of Intrinsic Diode** 

**==> picture [255 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>250<br>200<br>150<br>TJ = 125ºC<br>100<br>TJ  = 25ºC<br>50<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**==> picture [101 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>**----- End of picture text -----**<br>


**==> picture [255 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
280<br>T J = - 40ºC<br>240<br>200<br>25ºC<br>160<br>125ºC<br>120<br>80<br>40<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  V DS = 125V<br> I D = 90A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 50 100 150 200 250 300 350<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [531 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
100,000 1,000<br>f = 1 MHz  Ciss RDS(on) Limit<br>25µs<br>10,000<br>100<br>1,000 Coss 100µs<br>10<br>100<br>T J  = 150ºC 1ms<br>Crss TSingle Pulse C  = 25ºC<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>D<br>I<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFK180N25T IXFX180N25T** 

**==> picture [259 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>80<br>70 RG =1Ω , VGS = 15V<br>V DS = 125V<br>60<br>50<br>40 I  D  = 90A<br>30<br>I D = 180A<br>20<br>10<br>0<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


**==> picture [268 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 15. Resistive Turn-on Switching Times vs.<br> Gate Resistance<br>280 140<br>t r td(on) - - - -<br>240 120<br> TJ = 125ºC,  VGS = 15V<br>VDS = 125V<br>200 100<br>160 I  D  = 180A 80<br>120 60<br>80 I D = 90A 40<br>40 20<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times vs.<br> Drain Current<br>26 130<br>t f t d(off) - - - -<br>24 RG = 1Ω,   V GS  = 15V 120<br>V DS  = 125V<br>22 110<br>T J  = 125ºC<br>20 100<br>TJ = 25ºC<br>18 90<br>16 80<br>14 70<br>90 100 110 120 130 140 150 160 170 180<br>ID - Amperes<br> d ( o n )t<br> - Nanoseconds<br>t r<br> - Nanoseconds<br> d ( o f f )t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 14. Resistive Turn-on Rise Time vs.<br> Drain Current<br>80<br>RG = 1Ω , VGS = 15V<br>70<br>VDS = 125V<br>60<br>TJ = 125ºC<br>50<br>40<br>T J  = 25ºC<br>30<br>20<br>10<br>90 100 110 120 130 140 150 160 170 180<br>ID - Amperes<br>Fig. 16. Resistive Turn-off Switching Times vs.<br>Junction Temperature<br>30 120<br>t f t d(off) - - - -<br>26 R G  = 1Ω,  V GS  = 15V 110<br>VDS = 125V<br>I  D  = 180A<br>22 100<br>18 90<br>I D = 90A<br>14 80<br>10 70<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times vs.<br> Gate Resistance<br>700 560<br>t f td(off) - - - -<br>600 480<br>TJ = 125ºC,  VGS = 15V<br>VDS = 125V<br>500 400<br>400 320<br>I D = 180A<br>300 240<br>200 I  D = 90A 160<br>100 80<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> - Nanosecondsr<br>t<br>t<br> - Nanosecondsf d ( o f f )<br>t<br> - Nanoseconds<br> d ( o f f )t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

## **IXFK180N25T IXFX180N25T** 

**==> picture [538 x 234] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Maximum Transient Thermal Impedance<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_180N25T (9E-N25) 9-18-14-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFK180N25T./mosfet-n-ch-250v-180a-to-264)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixfk180n25t/mosfet-n-ch-250v-180a-to-264/dp/3949049)
---

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