# Power MOSFET, N Channel, 650 V, 80 A, 0.038 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3996604/)

**URL**: https://novapart.co/products/IXFH80N65X2-4/power-mosfet-n-channel-650-v-80-a-0038-ohm-to-247
**SKU**: IXFH80N65X2-4
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €9.7500
**Stock**: 10+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | HiPerFET Series |
| Qualification | - |
| Power Dissipation | 890W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 0.038ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3996604/)

## **X2-Class HiPerFET[TM] Power MOSFET** 

## **IXFH80N65X2-4** 

**V =   650V DSS I =   80A D25 R**  **38m**  **DS(on)** 

**==> picture [231 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>G<br>TO-247-4L<br>Ss<br>S<br>D<br>S<br>gs Ss<br>G ( D )Tab<br>V<br>V<br>S = Source   G = Gate<br>V<br>D = Drain     Ss = Source Sense<br>**----- End of picture text -----**<br>


N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratin**|**Maximum Ratingss**|
|---|---|---|---|---|
|**VDSS**|TJ = 25C to 150C||650|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M||650|V|
|**VGSS**|Continuous||30|V|
|**VGSM**|Transient||40|V|
|**ID25**|TC = 25C||80|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM||160|A|
|**IA**|TC = 25C||20|A|
|**EAS**|TC = 25C||3|J|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns|150°C                                      50                   V/ns|
|**PD**|TC = 25C||890|W|
|**TJ**||-55 ... +150|-55 ... +150|C|
|**TJM**|||150|C|
|**Tstg**||-55 ... +150|-55 ... +150|C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**Md**Mounting Torque                                                  1.13 / 10|Mounting Torque                                                  1.13 / 10|Mounting Torque                                                  1.13 / 10||Nm/lb.in|
|**Weight**|**Weight**6                            g|6                            g|6                            g|6                            g|



## **Features** 

- International Standard Package 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount  Space Savings 

|(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**<br>~~|~~|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>650<br>~~|~~|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.5 5.0      V<br>~~|~~|5.0      V<br>~~|=~~|5.0      V|
|**IGSS**<br>VGS =30V, VDS= 0V<br><br>|<br>~~=~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>3  mA|50<br>3  mA|50A<br>3  mA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1||38   m|



## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- DC-DC Converters  PFC Circuits  AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100748A(1/20) 

© 2020 IXYS CORPORATION, All Rights Reserved 

**IXFH80N65X2-4** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                      33|55|S|
|**RGi**<br>Gate Input Resistance<br>|0.6||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|8300<br>5010<br>1.6|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|280<br>1160|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 3 (External)|32<br>24<br>70<br>11|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|140<br>50<br>40|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>|<br>0.21|0.14C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||80       A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||320       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br>  <br>IF= 40A, -di/dt = 100A/µs<br>VR= 100V|200<br>1.7<br>16.7|ns<br>µC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXFH80N65X2-4** 

**==> picture [264 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>80<br>VGS = 10V<br>70           9V<br>8V<br>60<br>50<br>7V<br>40<br>30<br>20 6V<br>10<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

**==> picture [252 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>VGS = 10V<br>180 9V<br>160<br>140<br>8V<br>120<br>100<br>7V<br>80<br>60<br>40<br>6V<br>20<br>5V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**==> picture [535 x 425] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 40A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>80 3.8<br>VGS = 10V<br>70           8V 3.4 VGS = 10V<br>3.0<br>60<br>7V 2.6<br>50 I  D  = 80A<br>2.2<br>40<br>6V<br>1.8 I  D  = 40A<br>30<br>1.4<br>20<br>5V 1.0<br>10 0.6<br>4V<br>0 0.2<br>0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>VGS = 10V<br>4.0 1.2<br>3.5 1.1 BV DSS<br>TJ = 125ºC<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>TJ = 25ºC V GS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 20 40 60 80 100 120 140 160 180 200 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

**IXFH80N65X2-4** 

**==> picture [537 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs.<br>Fig. 8. Input Admittance<br>Case Temperature<br>90 100<br>80 90<br>70 80<br>70<br>60<br>TJ = 125ºC<br>60<br>50           25ºC<br>      - 40ºC<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10 10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**==> picture [539 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>90 200<br>80 TJ = - 40ºC 180<br>160<br>70<br>140<br>60 25ºC<br>120<br>50<br>125ºC 100<br>40<br>80<br>30 60 TJ = 125ºC<br>20<br>40 TJ  = 25ºC<br>10 20<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 325V<br> I D = 40A Ciss<br>8 10,000<br> I G = 10mA<br>6 1,000<br>Coss<br>4 100<br>2 10<br>f = 1 MHz  Crss<br>0 1<br>0 20 40 60 80 100 120 140 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemensgf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFH80N65X2-4** 

**Fig. 13. Output Capacitance Stored Energy** 

**Fig. 14. Forward-Bias Safe Operating Area** 

**==> picture [538 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 1000<br>RDS(on) Limit<br>50<br>100 25µs<br>40<br>100µs<br>30 10<br>20<br>1<br> TJ = 150ºC 1ms<br>10  TC = 25ºC<br>Single Pulse<br>10ms<br>0 Fig. 15. Maximum  Transient T 0.1 hermal Impedance<br>1 0 100 200 300 400 500 600 10 100 1,0 00<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>0.3 aaaaa<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules  - Amperes<br>OSS ID<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_80N65X2(Z8-S602) 11-19-15 

**IXFH80N65X2-4** 

**TO-247 - 4L Outline** tee tT 1 affh el -@—-ftei++ ail Lrote Ep (O) | tt Fl oe«+t 1 rrr : Ho fl ta| | R an hal reoe **PINS: 1,5 - Drain     3 - Source Sense 2 - Source     4 - Gate** 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFH80N65X2-4** 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION, All Rights Reserved 



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---

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