# Power MOSFET, N Channel, 200 V, 74 A, 0.034 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757915/)

**URL**: https://novapart.co/products/IXFH74N20P/power-mosfet-n-channel-200-v-74-a-0034-ohm-to-247
**SKU**: IXFH74N20P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.4300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar HiPerFET Series |
| Qualification | - |
| Power Dissipation | 480W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 74A |
| Drain Source On State Resistance | 0.034ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757915/)

## **PolarHT[TM ] Power MOSFET HiPerFET[TM]** 

## **IXFV74N20P IXFV74N20PS IXFH74N20P** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|N-Channel Enhancement Mode<br>Avalanche Rated<br>Fast Intrinsic Diode<br>**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>200<br>V<br>**VDGR**<br>TJ = 25°C to 175°C, RGS= 1MΩ<br>200<br>V<br>**VGSS**<br>Continuous<br>± 20<br>V<br>:D<br>~~ee~~|N-Channel Enhancement Mode<br>Avalanche Rated<br>Fast Intrinsic Diode<br>**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>200<br>V<br>**VDGR**<br>TJ = 25°C to 175°C, RGS= 1MΩ<br>200<br>V<br>**VGSS**<br>Continuous<br>± 20<br>V<br>:D<br>~~ee~~|N-Channel Enhancement Mode<br>Avalanche Rated<br>Fast Intrinsic Diode<br>**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>200<br>V<br>**VDGR**<br>TJ = 25°C to 175°C, RGS= 1MΩ<br>200<br>V<br>**VGSS**<br>Continuous<br>± 20<br>V<br>:D<br>~~ee~~|N-Channel Enhancement Mode<br>Avalanche Rated<br>Fast Intrinsic Diode<br>**Symbol**<br>**Test Conditions**<br>**Maximum Ratings**<br>**VDSS**<br>TJ = 25°C to 175°C<br>200<br>V<br>**VDGR**<br>TJ = 25°C to 175°C, RGS= 1MΩ<br>200<br>V<br>**VGSS**<br>Continuous<br>± 20<br>V<br>:D<br>~~ee~~|
|---|---|---|---|
|**VGSM**|Transient|± 30|V|
|**ID25**|TC = 25°C|74|A|
|**IDM**|TC = 25°C, pulse width limited by TJM|200|A|
|**IA**|TC = 25°C|37|A|
|**EAS**|TC = 25°C|1|J|
|**dV/dt**<br>IS<br>≤IDM,  VDD ≤VDSS, TJ ≤175°C<br>10<br>V/ns<br>**PD**<br>TC = 25°C<br>480<br>W<br>**TJ**<br>-55 ... +175<br>°C<br>**TJM**<br>175<br>°C<br>~~a~~||||
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum lead temperature for soldering|300|°C|
|**TSOLD**|Plastic body for 10s|260|°C|
|**Md**|Mounting torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in.|
|**FC**|Mounting force (PLUS220)<br>11..65/2.5..14.6|11..65/2.5..14.6|N/lb.|
|**Weight**|PLUS220 & PLUS220SMD|4                         g|4                         g|
||TO-247|6                        g|6                        g|



|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|**Min.      Typ.      Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>200||V|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>2.5<br>5.0|5.0|5.0<br>V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±|±100<br>nA|
|**IDSS**<br>VDS =  VDSS<br>25<br>VGS =  0V<br>TJ= 150°C<br>250    μA|25<br>250    μA|25<br>μA<br>250    μA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>34|34|34<br>mΩ|



**V =   200V DSS I =   74A D25 R ≤ 34m Ω DS(on) t ≤ 200ns rr PLUS220 (IXFV)** . A G DS D  (TAB) 4 f **PLUS220SMD (IXFV_S)** G S D (TAB) 

**TO-247 (IXFH)** 

D  (TAB) 

G =  Gate D      =  Drain S =  Source TAB  =  Drain 

## **Features** 

International standard packages Fast recovery diode Avalanche rated Low package inductance - easy to drive and to protect 

## **Advantages** 

Easy to mount Space savings High power density 

DS99209F(05/08) 

© 2008 IXYS CORPORATION, All rights reserved 

## **IXFH74N20P   IXFV74N20P IXFV74N20PS** 

|**Symbol**<br>**Test Conditions**<br>(TJ= 25°C unless otherwise specified)**Min.        Typ.           Max.**|**Symbol**<br>**Test Conditions**<br>(TJ= 25°C unless otherwise specified)**Min.        Typ.           Max.**|**Symbol**<br>**Test Conditions**<br>(TJ= 25°C unless otherwise specified)**Min.        Typ.           Max.**|**Characteristic Values**<br>**Min.        Typ.           Max.**|**Characteristic Values**<br>**Min.        Typ.           Max.**|**Characteristic Values**<br>**Min.        Typ.           Max.**|**Characteristic Values**<br>**Min.        Typ.           Max.**||
|---|---|---|---|---|---|---|---|
|**gfs**||VDS = 10V, ID= 0.5 • ID25, Note 1                   30             44|, Note 1                   30             44|, Note 1                   30             44|||S|
|**Ciss**|||3300|3300|||pF|
|**Coss**<br>**Crss**<br>**td(on)**<br>**tr**<br>**td(off)**<br>**tf**||VGS = 0V, VDS= 25V, f = 1MHz<br>  <br>60<br>21<br>**Resistive Switching Times**<br>VGS= 1V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 4Ω(External)|800<br>190<br>23<br> 21                   ns<br>60<br>21|800<br>190<br>23<br>21                   ns<br>60<br>21|21                   ns|ns<br>21                   ns<br>ns<br>ns|pF<br>pF<br>ns<br>21                   ns<br>ns<br>ns|
|**Qg(on)**<br>**Qgs**<br>**Qgd**|||VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|107<br>24<br>52|107<br>24<br>52|||nC<br>nC<br>nC|
|**RthJC**||||0.31|0.31|0.31 °C/W||
|**RthCS**||(TO-247, PLUS220)|0.25|0.25||°C/W||
|**Source-Drain Diode**|||**Characteristic Values**||**Characteristic Values**|||
|TJ= 25°C unless otherwise specified)|C unless otherwise specified)**Min.        Typ.           Max.**||**Min.        Typ.           Max.**|**Min.        Typ.           Max.**|**Min.        Typ.           Max.**|**Min.        Typ.           Max.**||
|**IS**||VGS= 0V||74|74|74|A|
|**ISM**||Repetitive, pulse width limited by TJM||180|180|180|A|
|**VSD**||IF= IS, VGS= 0V, Note 1||1.5|1.5|1.5|V|
|**trr**<br>**QRM**<br>**IRM**||IF= 25A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V|120<br>0.40<br>6|120 200  ns<br>0.40<br>6|200  ns|200  ns|200  ns<br>μC<br>A|



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**----- Start of picture text -----**<br>
 PLUS220 (IXFV) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
trr IF = 25A, -di/dt = 100A/μs                   120           200  ns   TO-247 (IXFH) Outline<br>QRM                 0.40 μC = E A<br>IRM VR = 100V, VGS = 0V                      6 A 41 Ryh Q7J os t 4  o r|<br>o f i<br>∅ P<br>| ; ms<br>! _u1<br>Note 1:  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. L<br>b1 an | A t e<br>PLUS220SMD (IXFV_S)  Outline 5 L e ” bc<br>is Dim. Millimeter Inches<br>[re Pat jt<br>| | i -AS-A2 [000[098 ]_118| 010 || 250]6.00 | 3.00o25 || A Min.4.7 Max.5.3 .185Min. Max..209<br>b 6-035] A1 2.2 2.54 .087 .102<br>Ty rs ri 047] 6.90] Leo | A2 2.2 2.6 .059 .098<br>j \S/ 3 \ 1 jc | Oes |] 035] O.70 |] 0.90 | b 1.0 1.4 .040 .055<br>fp pot : run, ob |755i [591 [14.00 175.00 b1 1.65 2.13 .065 .084<br>LQ) Tp 7 | ou -o7 [Sie | 539 /13.00 |13.70 | b2 2.87 3.12 .113 .123<br>L gaail J IT whl Lp) De | .2008sc | S.os BSc__| CD 20.80.4 21.46.8 .819.016 .845.031<br>rota ta } a (cOULECTOR) E 15.75 16.26 .610 .640<br>e 5.20 5.72 0.205 0.225<br>HT AP) & BRam (COULECTOR) L 19.81 20.32 .780 .800<br>L1 4.50 .177<br>∅P 3.55 3.65 .140 .144<br>Q 5.89 6.40 0.232 0.252<br>R 4.32 5.49 .170 .216<br>S 6.15     BSC 242    BSC<br>IXYS reserves the right to change limits, test conditions,  and  dimensions.<br>IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2<br>by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br>


**IXFH74N20P   IXFV74N20P IXFV74N20PS** 

## **Fig. 1. Output Characteristics @ 25ºC** 

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80<br>VGS = 10V<br>70<br>          9V<br>          8V<br>60<br>7V<br>50<br>40<br>30<br>6V<br>20<br>10 5V<br>0<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 150ºC** 

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**----- Start of picture text -----**<br>
80<br>VGS = 10V<br>70<br>          9V<br>60           8V<br>7V<br>50<br>40<br>6V<br>30<br>20<br>10 5V<br>0<br>0 1 2 3 4 5 6 7<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID** 

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**----- Start of picture text -----**<br>
5.0<br>4.5<br>V GS = 10V<br>4.0             15V  - - - -<br>TJ = 175ºC<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>TJ = 25ºC<br>0.5<br>0 20 40 60 80 100 120 140 160 180 200<br>I D - Amperes<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>200<br>180 V GS = 10V 9V<br>160<br>8V<br>140<br>120<br>7V<br>100<br>80<br>60 6V<br>40<br>20 5V<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.0<br>2.6 VGS = 10V<br>2.2<br>I D = 74A<br>1.8<br>ID = 37A<br>1.4<br>1.0<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br>


## **Fig. 6. Drain Current vs. Case Temperature** 

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**----- Start of picture text -----**<br>
80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION, All rights reserved 

**IXFH74N20P   IXFV74N20P IXFV74N20PS** 

**Fig. 7. Input Admittance** 

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**----- Start of picture text -----**<br>
100<br>90<br>80<br>70<br>60<br>50<br>40<br>30  TJ = 150ºC<br>           25ºC<br>20          - 40ºC<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5<br>VG S - Volts<br>Fig. 9. Source Current vs.<br>Source-To-Drain Voltage<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60 T J = 150ºC<br>40<br>TJ = 25ºC<br>20<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>VS D - Volts<br> - Amperes<br>D<br>I<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

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**----- Start of picture text -----**<br>
10000<br>f = 1MHz<br>C iss<br>1000 C oss<br>C rss<br>100<br>0 5 10 15 20 25 30 35 40<br>VD S - Volts<br>Capacitance - picoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
60<br>TJ = - 40ºC<br>50<br>25ºC<br>40<br>30 150ºC<br>20<br>10<br>0<br>0 20 40 60 80 100 120<br>I D - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [240 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 V DS = 100V<br>8 I D  = 37A<br>7 I G  = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

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**----- Start of picture text -----**<br>
1000<br>TJ = 175ºC<br>RDS(on)  T C  = 25ºC<br>100 25µs<br>100µs<br>1ms<br>10ms<br>10<br>DC<br>1<br>10 100 1000<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

IXYS REF: F_74N20P(6S)6-15-05-D 

**IXFH74N20P   IXFV74N20P IXFV74N20PS** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
1.00<br>0.10<br>0.01<br>0.1 1 10 100 1000<br>Pulse Width - milliseconds<br>ºC / W<br> -<br>( t h ) J C<br>Z<br>**----- End of picture text -----**<br>


© 2008 IXYS CORPORATION, All rights reserved 

IXYS REF: F_74N20P(6S)6-15-05-D 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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