# Power MOSFET, N Channel, 500 V, 52 A, 0.12 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757928/)

**URL**: https://novapart.co/products/IXFH52N50P2/power-mosfet-n-channel-500-v-52-a-012-ohm-to-247
**SKU**: IXFH52N50P2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.6600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar2 HiPerFET Series |
| Qualification | - |
| Power Dissipation | 960W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 52A |
| Drain Source On State Resistance | 0.12ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757928/)

## **Polar2[TM ] HiperFET[TM] Power MOSFET** 

## **IXFH52N50P2 IXFT52N50P2** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|500|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|500|V|
|**VGSS**|Continuous|±30|V|
|**VGSM**|Transient|±40|V|
|**ID25**|TC = 25°C|52|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|150|A|
|**IA**|TC = 25°C|52|A|
|**EAS**|TC = 25°C|1.5|J|
|**dv/dt**|IS<br>≤IDM, VDD ≤VDSS, TJ ≤150°C                                      15                V/ns|150°C                                      15                V/ns|150°C                                      15                V/ns|
|**PD**|TC = 25°C|960|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|1.6mm (0.062in.) from Case for 10s|300|°C|
|**Tsold**|Plastic Body for 10 seconds|260|°C|
|**Md**|Mounting Torque  (TO-247)|1.13 / 10|Nm/lb.in.|
|**Weight**|**Weight**TO-247|6|g|
|TO-268                                                                                              4                         g|TO-268                                                                                              4                         g|TO-268                                                                                              4                         g|TO-268                                                                                              4                         g|



|**Symbol**<br>(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|**Min.       Typ.      Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.       Typ.      Max.**<br>~~|~~|**Min.       Typ.      Max.**<br>~~||~~|**Min.       Typ.      Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>500<br>~~|~~<br>~~|~~|~~||~~<br>~~||~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>2.5<br>4.5    V<br>~~|~~<br>~~|~~<br>~~|_|~~|4.5    V<br>~~| |~~<br>~~||~~<br>~~|_|~~|4.5    V<br>~~|_|~~|
|**IGSS**<br>VGS =±30V, VDS= 0V<br>±<br>~~|~~<br>~~|_|~~|±<br>~~| |~~<br>~~|_|~~|±100  nA<br>~~|_|~~|
|**IDSS**<br>VDS =  VDSS, VGS= 0V<br>15<br>TJ= 125°C<br>1.5<br>~~|_|~~<br>~~|~~|15<br>1.5<br>~~|_|~~<br>~~—~~<br>~~||~~|15μA<br>1.5 mA<br>~~|_|~~|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25, Note 1<br>120  m<br>~~|~~|120  m<br>~~||~~|120  mΩ|



**V =   500V DSS I =   52A D25 R ≤ 120m Ω DS(on)** 

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**----- Start of picture text -----**<br>
TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


## **TO-268 (IXFT)** 

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**----- Start of picture text -----**<br>
G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance 

## **Advantages** 

High Power Density Easy to Mount Space Savings 

## **Applications** 

Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters : Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 

DS100256A(9/11) 

© 2011 IXYS CORPORATION,  All Rights Reserved 

## **IXFH52N50P2 IXFT52N50P2** 

## **Symbol Test Conditions Characteristic Values** 

||||
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                   30<br><br>|48<br>|S<br>|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|6800<br>695<br>76|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1Ω(External)|22<br>10<br>46<br>8|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|113<br>30<br>43|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>|<br>0.21|0.13 °C/W<br>°C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.         Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.         Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.         Max.**|
|---|---|---|
|**IS**<br>VGS= 0V||52<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||208<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.3<br>V|



Note      1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

## **TO-247 Outline** 

||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||
||||||||||||||||||||
||||||||||||||||||||
||||||||||||||||||||
||||||||||||||||||||
||||||||**1**|||**2       3**||∅P|||||||
||||||||||||||||||||
||||||||||||||||||||
|Terminals:||||||||~~e~~<br> 1 - Gate|||||2 - Drain||||||
|||||||||3 - Source|||||||||||
||Dim.||||Millimeter<br>Min.<br>Max.||||||||Inches<br>Min.<br>Max.||||||
|||A<br>A1<br>A2||||4.7<br>2.2<br>2.2||||5.3<br>2.54<br>2.6|||.185<br>.087<br>.059|||.209<br>.102<br>.098|||
|||b<br>b1|||1.0<br>1.65|||||1.4<br>2.13|||.040<br>.065|||.055<br>.084|||
|||b~~2~~|||2.87|||||3.12|||.113|||.123|||
|||C||||||.4||.8|||.016|||.031|||
|||D|||20.80|||||21.46|||.819|||.845|||
|||E|||15.75|||||16.26|||.610|||.640|||
|||e|||5.20|||||5.72||0.205 0.225|||||||
|||L|||19.81|||||20.32|||.780|||.800|||
|||L1||||||||4.50||||||.177|||
|||∅P|||3.55|||||3.65|||.140|||.144|||
|||Q|||5.89|||||6.40||0.232 0.252|||||||
|||R|||4.32|||||5.49|||.170|||.216|||
|||S|||6.15|||||BSC|||242 BSC||||||



## **TO-268  Outline** 

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**----- Start of picture text -----**<br>
Terminals: 1 - Gate 2 - Drain<br>3 - Source 4 - Drain<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFH52N50P2 IXFT52N50P2** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>55<br>50 VGS = 10V<br>         7V<br>45<br>40<br>35<br>30 6V<br>25<br>20<br>15<br>10<br>5V<br>5<br>0<br>0 1 2 3 4 5 6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125ºC<br>55<br>50 VGS = 10V<br>        7V<br>45<br>40 6V<br>35<br>30<br>25<br>20<br>5V<br>15<br>10<br>5 4V<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 26A Value vs.<br>Drain Current<br>3.4<br>V GS = 10V<br>3.0<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4<br>TJ = 25ºC<br>1.0<br>0.6<br>0 10 20 30 40 50 60 70 80 90 100 110 120<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>120<br>VGS = 10V<br>         8V<br>100<br>7V<br>80<br>60<br>6V<br>40<br>20<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br>Fig. 4. RDS(on) Normalized to ID = 26A Value vs.<br>Junction Temperature<br>3.4<br>3.0 VGS = 10V<br>2.6<br>2.2 I D = 52A<br>1.8 I D = 26A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION,  All Rights Reserved 

## **IXFH52N50P2 IXFT52N50P2** 

**==> picture [535 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>90 100<br>80 90 T J = - 40ºC<br>70 80<br>TJ = 125ºC 70<br>60           25ºC 25ºC<br>        - 40ºC 60<br>50<br>50<br>40 125ºC<br>40<br>30<br>30<br>20<br>20<br>10 10<br>0 0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 50 60 70 80 90<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>120 10<br>9  V DS = 250V<br>100  I D = 26A<br>8  I  G  = 10mA<br>7<br>80<br>6<br>60 5<br>4<br>40 T J = 125ºC<br>3<br>TJ  = 25ºC<br>2<br>20<br>1<br>Fig. 13. Maximum Transient Thermal Impedance<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70 80 90 100 110 120<br>1.00<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance<br>             Fig. 12. Maximum Transient Thermal Impedance<br>100,000 0.30<br>f = 1 MHz<br>10,000 C iss<br>0.10<br>1,000<br>Coss<br>100<br>Crss<br>10 0.01<br>0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - Amperes  - Siemens<br>ID gf s<br> - Volts<br>GS<br> - AmperesIS V<br> - ºC / W<br>(th)JC<br>Z<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_52N50P2(8J-N45)03-22-10 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixfh52n50p2/mosfet-n-ch-500v-52a-to-247/dp/4757928)
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