# Power MOSFET, HiPerFET, N Channel, 300 V, 52 A, 0.06 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:7347952/)

**URL**: https://novapart.co/products/IXFH52N30Q/power-mosfet-hiperfet-n-channel-300-v-52-a-006-ohm
**SKU**: IXFH52N30Q
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €7.3900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 360W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 360W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.06ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 52A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:7347952/)

## **HiPerFET[TM] Power MOSFETs Q-Class** 

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances 

## **IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q** 

**V = 300    V DSS I = 52    A D25 R = 60 m** Q) **DS(on) t** < **250   ns rr** 

## Preliminary data 

|**Symbol**|**Test Conditions**<br>**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**|**TO-247 AD (IXFH)**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25 C to 150 C|300|V|||||||||
|**VDGR**<br>TJ = 25 C to 150 C; RGS= 1 M<br>**VGS**<br>Continuous<br>**VGSM**<br>Transient<br>**ID25**<br>TC = 25 C, Chip capability<br>**IDM**<br>TC = 25 C, pulse width limited by TJM<br>**IAR**<br>TC = 25 C<br>OO||300<br>20<br>30<br>52<br>208<br>52<br>+|V<br>V<br>V<br>A<br>A<br>A|**TO-268 (D3) ( IXFT)**|**TO-268 (D3) ( IXFT)**<br>DZ<br>Ss||Z|||(TAB)||
|**EAR**<br>TC = 25 C<br>30<br>mJ<br>**EAS**<br>TC = 25 C<br>1.5<br>J<br>**dv/dt**<br>IS<br>IDM, di/dt 100 A/ s, VDD VDSS,<br>5<br>V/ns<br>TJ<br>150 C, RG= 2<br>~~———~~|||||G||S|||(TAB)||
|**PD**|TC = 25 C|360|W|||||||||
|**TJ**<br>**TJM**||-55 ... +150<br>150|C<br>C|**TO-264 AA (IXFK)**||||||||
|**Tstg**||-55 ... +150|C|||||||||
|**TL**|1.6 mm (0.063 in) from case for 10 s|300|C|||||||||
|**Md**|Mounting torque<br>TO-247<br>TO-264|1.13/10 <br>0.9/6|Nm/lb.in.<br> Nm/lb.in.||G<br>D||S|||D (TAB)||
|**Weight**|TO-247|6|g|G = Gate||||||||
||TO-264|10|g|S = Source||||TAB = Drain||||
||TO-268|4|g|||||||||



## **Features** 

- Low gate charge 

## **Symbol Test Conditions Characteristic Values** 

||||(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|
|---|---|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||||
|**VDSS**|VGS = 0 V, I|= 0 V, ID= 1 mA|300|||||V|
|**VGS(th)**|VDS = V|= VGS, ID= 4 mA|2|||4||V|
|**IGSS**|VGS =|20 VDC, VDS= 0<br>||||+|200|nA||
|**IDSS**|VDS = V|= VDSS|TJ= 25 C|||50||A|
||VGS = 0 V|= 0 V|TJ= 125 C|||1|mA||
|**RDS(on)**|VGS = 10 V, I|= 10 V, ID= 0.5 • ID25||||60|m|Q|
||Pulse test, t  300 s, duty cycle d|Pulse test, t  300 s, duty cycle d<br><<br>ou|Pulse test, t  300 s, duty cycle d 2 %||||||



- International standard packages 

- EpoxymeetUL94V-0, flammability classification 

- Low RDS (on) HDMOS[TM] process 

- Rugged polysilicon gate cell structure 

- Avalanche energy and current rated 

- Fast intrinsic Rectifier 

## **Advantages** 

- Easy to mount 

- Space savings 

- High power density 

98522B (7/00) 

IXYS reserves the right to change limits, test conditions, and dimensions. 

© 2000 IXYS All rights reserved 

1 - 2 

**IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q** 

## **Symbol Test Conditions Characteristic Values** 

**==> picture [110 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
 TO-247 AD (IXFH) Outline<br>**----- End of picture text -----**<br>


|**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**|(TJ= 25 C, unless otherwise specified)<br>**min.**<br>VDS = 10 V; ID= 0.5 • ID25, pulse test<br>22<br>VGS = 0 V, VDS= 25 V, f = 1 MHz|(TJ= 25 C, unless otherwise specified)<br>**min.**<br>VDS = 10 V; ID= 0.5 • ID25, pulse test<br>22<br>VGS = 0 V, VDS= 25 V, f = 1 MHz|(TJ= 25 C, unless otherwise specified)<br>**min.**<br>VDS = 10 V; ID= 0.5 • ID25, pulse test<br>22<br>VGS = 0 V, VDS= 25 V, f = 1 MHz|C, unless otherwise specified)<br>**typ.**<br>**max.**<br>35<br>S<br>5300<br>pF<br>1010<br>pF<br>200<br>pF<br>**TO-247 AD (IXFH) Outline**<br>-|C, unless otherwise specified)<br>**typ.**<br>**max.**<br>35<br>S<br>5300<br>pF<br>1010<br>pF<br>200<br>pF<br>**TO-247 AD (IXFH) Outline**<br>-|C, unless otherwise specified)<br>**typ.**<br>**max.**<br>35<br>S<br>5300<br>pF<br>1010<br>pF<br>200<br>pF<br>**TO-247 AD (IXFH) Outline**<br>-|C, unless otherwise specified)<br>**typ.**<br>**max.**<br>35<br>S<br>5300<br>pF<br>1010<br>pF<br>200<br>pF<br>**TO-247 AD (IXFH) Outline**<br>-|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**<br>iE|**TO-247 AD (IXFH) Outline**<br>iE|**TO-247 AD (IXFH) Outline**<br>iE|**TO-247 AD (IXFH) Outline**<br>iE|**TO-247 AD (IXFH) Outline**<br>iE|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**td(on)**|||||27||ns||Dim.|Millimeter<br>Min.<br>Max.||Inches<br>Min.<br>Max.||
|**tr**|VGS = 10 V, V|= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|||60||ns||A|19.81|20.32|0.780|0.800|
|**td(off)**|RG= 1.5|(External),|||80||ns||B<br>C|20.80 <br>15.75|21.46<br> 16.26|0.819 <br>0.610|0.845<br> 0.640|
|**tf**|||||25||ns||D|3.55|3.65|0.140|0.144|
|**Qg(on)**|||||150||nC||E<br>F|4.32<br>5.4|5.49<br>6.2|0.170 <br>0.212|0.216<br> 0.244|
|**Qgs**|VGS = 10 V, V|= 10 V, VDS= 0.5 • VDSS, ID= 0.5 • ID25|||34||nC||G<br>H|1.65<br>-|2.13<br>4.5|0.065 <br>-|0.084<br>0.177|
|**Qgd**|||||75||nC||J|1.0|1.4|0.040|0.055|
|**RthJC**||||||0.35|K/W||K<br>L|10.8<br>4.7|11.0<br>5.3|0.426 <br>0.185|0.433<br> 0.209|
||||||||||M|0.4|0.8|0.016|0.031|
|**RthCK**|TO-247||||0.25||K/W||N|1.5|2.49|0.087|0.102|
||TO-264||||0.15||K/W|||||||



## **TO-264 AA Outline** 

|**Source-Drain Diode**|**Source-Drain Diode**||**Characteristic Values**|**Characteristic Values**|
|---|---|---|---|---|
|||(TJ= 25 C, unless otherwise specified)|||
|**Symbol**|**Test Conditions**||**min.**<br>**typ.     max.**||
|**IS**|VGS = 0 V||52|A|
|**ISM**|Repetitive; pulse width limited by T||Repetitive; pulse width limited by TJM<br>208|A|
|**VSD**|IF= IS, VGS= 0 V,||1.5|V|
|**trr**<br>**QRM**<br>**IRM**|IF= IS-di/dt = 100 A/ s, VR= 100 V<br>Pulse test, t<br>00 s, duty cycle d<br>y<br>;|= 100 V<br>2 %<br>250<br>1<br>8<br><||ns<br>C<br>A<br>3|



|||||||||1.5|1.5||V|V||Dim.|Dim.|Millimeter<br>Min.<br>Max.|Millimeter<br>Min.<br>Max.|Millimeter<br>Min.<br>Max.|Millimeter<br>Min.<br>Max.|Millimeter<br>Min.<br>Max.|Millimeter<br>Min.<br>Max.||Inches<br>Min.<br>Max.|Inches<br>Min.<br>Max.|Inches<br>Min.<br>Max.|Inches<br>Min.<br>Max.|Inches<br>Min.<br>Max.|Inches<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|<|2 %|2 %||||||||||||A||4.82<br>5.13|||||||.190||||||.202|
|= 100 V|= 100 V|= 100 V||||1<br>8||250||ns<br>C<br>A<br>3||||A1<br>A2<br>b<br>b1<br>b2||2.54<br>2.89<br>2.00<br>2.10<br>1.12<br>1.42<br>2.39<br>2.69<br>2.90<br>3.09|||||||.100<br>.079<br>.044<br>.094<br>.114||||||.114<br>.083<br>.056<br>.106<br>.122|
|||||||||||||||c||0.53<br>0.83|||||||.021||||||.033|
|||||||||||||||D||25.91<br>26.16|||||||1.020||||||1.030|
|||||||||||||||E||19.81<br>19.96|||||||.780||||||.786|
|||||||||||||||e|||5.46 BSC||||||||.215 BSC|||.215 BSC||
|||||||||||||||J||0.00<br>0.25|||||||.000||||||.010|
|||Dim.|Millimeter|||Inches||||||||K<br>L||0.00<br>0.25<br>20.32<br>20.83|||||||.000<br>.800||||||.010<br>.820|
||||Min.|Max.||Min.|Max.|||||||L1||2.29<br>2.59|||||||.090||||||.102|
|||A<br>A1<br>A2|4.9<br>2.7<br>.02|5.1<br>2.9<br>.25||.193<br>.106<br>.001||.201<br>.114<br>.010||||||P<br>Q<br>Q1<br>R||3.17<br>3.66<br>6.07<br>6.27<br>8.38<br>8.69<br>3.81<br>4.32|||||||.125<br>.239<br>.330<br>.150||||||.144<br>.247<br>.342<br>.170|
|||b|1.15|1.45||.045||.057||||||R1||1.78<br>2.29|||||||.070||||||.090|
|||b2|1.9|2.1||.75||.83||||||S||6.04<br>6.30|||||||.238||||||.248|
|||C<br>D<br>E<br>E1<br>e          5.45 BSC<br>H<br>L<br>L1<br>L2<br>L3         0.25 BSC<br>L4|.4<br>.65<br>13.80<br>14.00<br>15.85<br>16.05<br>13.3<br>13.6<br>e          5.45 BSC<br>.215 BSC<br>18.70<br>19.10<br>2.40<br>2.70<br>1.20<br>1.40<br>1.00<br>1.15<br>L3         0.25 BSC .010 BSC<br>3.80<br>4.10||.215 BSC<br>.010 BSC|.016<br>.543<br>.624<br>.524<br>.215 BSC<br>.736<br>.094<br>.047<br>.039<br>.010 BSC<br>.150|.026<br>.551<br>.632<br>.535<br>.215 BSC<br>.752<br>.106<br>.055<br>.045<br>.010 BSC<br>.161|||||**Min. Recommended Footprint**|T<br>1.57<br>1.83<br>.062<br>.072<br>**Min. Recommended Footprint**<br>~~ua~~<br>Eig|||||||||||||||||
|||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||
|IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:<br>4,835,592<br>4,881,106|||||IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:<br>5,017,508<br>5,049,961<br>5,187,117<br>5,486,715|||||||||||||||||||||||||
|4,850,072|||4,931,844||5,034,796|||5,063,307||||5,237,481||5,381,025||||||||||||||||



## **TO-268AA (D[3] PAK)** 

© 2000 IXYS All rights reserved 

2 - 2 



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- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixfh52n30q/mosfet-n-to-247/dp/7347952)
---

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