# Power MOSFET, N Channel, 600 V, 42 A, 0.185 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2429709/)

**URL**: https://novapart.co/products/IXFH42N60P3/power-mosfet-n-channel-600-v-42-a-0185-ohm-to-247
**SKU**: IXFH42N60P3
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.7200
**Stock**: 500+
**Lead Time**: 267 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 830W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.185ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2429709/)

## **Polar3[TM] HiperFET[TM] Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

**==> picture [209 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
V =   600V<br>DSS<br>I =   42A<br>D25<br>R     185m <br>DS(on)<br>D<br>G<br>TO-247<br>S<br>**----- End of picture text -----**<br>


## **IXFH42N60P3** 

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**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Maximum Ratings|G|
|D|Tab|
|VDSS|TJ|= 25C to 150C|600|V|S|
|VDGR|TJ|= 25C to 150C, RGS = 1M|600|V|
|G  = Gate|D       =  Drain|
|VGSS|Continuous| 30|V|S  = Source      Tab    =  Drain|
|VGSM|Transient| 40|V|
|ID25|TC|= 25C|42|A|
|IDM|TC|= 25C, Pulse Width Limited by TJM|100|A|
|IA|TC|= 25C|21|A|
|EAS|TC|= 25C|1|J|Features|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      35                V/ns||International Standard Package|
|PD|TC|= 25|C|830|W||Fast Intrinsic Rectifier|
|||Avalanche Rated|
|T|-55 ... +150|C|
|TJJM|150|C||Low RLow Package InductanceDS(ON) and QGLow Package InductanceDS(ON) and QG|
|T|-55 ... +150|C|
|stg|
|TL|Maximum Lead Temperature for Soldering                    300|°C|Advantages|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|Md|Mounting Torque|1.13 / 10|Nm/lb.in||High Power DensityEasy to Mount|
|Weight|6|g||

**----- End of picture text -----**<br>


- International Standard Package 

- Fast Intrinsic Rectifier  Avalanche Rated  DS(ON) and QG and QGG Low RLow Package InductanceDS(ON) and QGLow Package InductanceDS(ON) and QG 

- Easy to Mount 

- Space Savings 

## **Applications** 

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**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Symbol|Test Conditions                                             Characteristic Values|
|(TJ = 25C Unless Otherwise Specified)|Min.       Typ.      Max.|
|BVDSS|VGS|= 0V, ID = 1mA|600|||V|
|VGS(th)|VDS|= VGS, ID = 4mA|3.0|5.0    V|||
|IGSS|VGS|= 30V, VDS = 0V||||100  nA|
|IDSS|VDS|= VDSS, VGS = 0V|25    A|
|TJ = 125C|1.5|a|mA|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|185  m|_||

**----- End of picture text -----**<br>


- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls 

DS100296D(1/20) 

© 2020 IXYS CORPORATION,  All Rights Reserved 

## **IXFH42N60P3** 

|**Symbol**<br>**Test Conditions                                          Characteristic Values**|**Symbol**<br>**Test Conditions                                          Characteristic Values**|**Symbol**<br>**Test Conditions                                          Characteristic Values**|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   25|42|S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|5150<br>500<br>2.8|pF<br>pF<br>pF|
|**RGi**Gate Input Resistance|1.0||
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 1(External)|32<br>23<br>60<br>17|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Q**<br>|78<br>23<br>20|nC<br>nC<br>nC|
|**gd**<br>|||
|**RthJC**<br>**RthCS**<br>|<br>0.21|0.15 C/W<br>C/W|



## **Source-Drain Diode** 

**Symbol Test Conditions                                           Characteristic Values** (TJ = 25C Unless Otherwise Specified) **Min.        Typ. Max.** 

||||
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
||||
|**IS**<br>VGS= 0V||42<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||168<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.3<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 21A, -di/dt = 100A/µs<br>VR= 100V, VGS = 0V|<br>12.4 <br>1.4|250     ns<br> A<br>µC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFH42N60P3** 

**==> picture [166 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
45<br>V GS = 10V<br>40         7V<br>35<br>30 6V<br>25<br>20<br>15<br>10<br>5 5V<br>0<br>0 1 2 3 4 5 6 7 8 9<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

**==> picture [255 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
45<br>V GS = 10V<br>40         7V<br>35<br>6V<br>30<br>25<br>20<br>15 5V<br>10<br>5<br>4V<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 21A Value vs.<br>Drain Current<br>3.0 V GS = 10V<br>TJ = 125ºC<br>2.6<br>2.2<br>1.8<br>1.4 T J = 25ºC<br>1.0<br>0.6<br>0 10 20 30 40 50 60 70 80<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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**----- Start of picture text -----**<br>
80<br>V GS = 10V<br>70<br>60 7V<br>50<br>40<br>6V<br>30<br>20<br>10<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 21A Value vs. Junction Temperature** 

**==> picture [257 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.4<br>VGS = 10V<br>3.0<br>2.6<br>I D = 42A<br>2.2<br>1.8 I D = 21A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

**IXFH42N60P3** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>70<br>60<br>50 TJ = 125ºC<br>          25ºC<br>        - 40ºC<br>40<br>30<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>120<br>100<br>80<br>60<br>40<br>TJ = 125ºC<br>20 T J  = 25ºC<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>ID<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**==> picture [261 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>80<br>TJ = - 40ºC<br>70<br>60<br>25ºC<br>50<br>125ºC<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [251 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9  V DS = 300V<br> I D = 21A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [527 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
10,000 100<br>R DS(on)  Limit 100µs<br>C iss<br>1,000<br>C oss<br>100 10<br>10<br>Crss T T J C  = 150ºC  = 25ºC<br>f = 1 MHz  Single Pulse<br>1ms<br>1<br>1<br>0 5 10 15 20 25 30 35 40<br>10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFH42N60P3** 

**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [526 x 253] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>    Fig. 13. Maximium Transient Thermal Impedance<br>0.2 aaaa<br>0.1<br>0.01<br>0.001<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_42P60P3(W7)03-24-11 

## **IXFH42N60P3** 

**==> picture [170 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 Outline<br>[-B=| a<br>ae|7 @xrllThi [S] 02 oP] aK<br>0 Tr a a<br>er<br>12 3c ont<br>ul<br>T Ets] tf |<br>i ie<br>M a ia>bf 1 - Gate<br>2,4 - Drain<br>[él J DICTA WD) 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFH42N60P3** ~~sd~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION,  All Rights Reserved 



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- [View this product on Novapart](https://novapart.co/products/IXFH42N60P3/power-mosfet-n-channel-600-v-42-a-0185-ohm-to-247)
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- [Supplier page](https://es.farnell.com/ixys-semiconductor/ixfh42n60p3/mosfet-n-ch-600v-42a-to-247/dp/2429709)
---

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