# Power MOSFET, N Channel, 300 V, 40 A, 0.085 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:9359150/)

**URL**: https://novapart.co/products/IXFH40N30/power-mosfet-n-channel-300-v-40-a-0085-ohm-to-247
**SKU**: IXFH40N30
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.2700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 300W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.085ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.085ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9359150/)

## **HiPerFET[TM] Power MOSFETs** 

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS[TM] Family 

||**V**DSS|**V**DSS||**I**D25|**R**DS(on)|**R**DS(on)|
|---|---|---|---|---|---|---|
|**IXFH/IXFM 35 N30**|**300 V**|**300 V**||**35 A**|**100 m**|Q|
|**IXFH 40 N30**|**300 V**|**300 V**||**40 A**|**85 m**|Q|
|**IXFM 40 N30**|**300 V**|**300 V**||**40 A**|**88 m**|Q|
||**t**rr<br><|**200 ns**||**200 ns**|||



**Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS** TJ = 25 C to 150 C 300 V **VDGR** TJ = 25 C to 150 C; RGS = 1 M 300 V **V** ST **GS** Continuous ~ 20 _ V ZH,Ss * **VGSM** Transient 30 V **ID25** TC = 25 C 35N3040N30 3540 AA **TO-204 AE (IXFM) IDM** TC = 25 C, pulse width limited by TJM 35N30 140 A 40N30 160 A ° SyU **IAR** TC = 25 C 35N30 35 A G 40N30 40 A D **EAR** TC = 25 C 30 mJ G = Gate,S = Source, TAB = DrainD = Drain, a **dv/dt** IS IDM, di/dt 100 A/ s, VDD a VDSS, 5 V/ns TJ  150 <° C, RG = 2 QO **PD** TC = 25 C 300 W **Features TJ** -55 ... +150 C **TTJMstg** -55 ... +150150 CC ••• Rugged polysilicon gate cell structureInternational standard packagesLow RDS (on) HDMOS[TM] process **TL** 1.6 mm (0.062 in.) from case for 10 s 300 C • ratedUnclamped Inductive Switching (UIS)Unclamped Inductive Switching (UIS) **Md** Mounting torque 1.13/10 Nm/lb.in. • Low package inductance - easy to drive and to protect **Weight** TO-204 = 18 g, TO-247 = 6 g • Fast intrinsic Rectifier **Applications Symbol Test Conditions Characteristic Values** (TJ = 25 C, unless otherwise specified) • DC-DC converters **min. typ. max.** • Synchronous rectification • Battery chargers **VDSS** VGS = 0 V, ID = 250 A 300 V • Switched-mode and resonant-mode power supplies **VGS(th)** VDS = VGS, ID = 4 mA 2 4 V • DC choppers • AC motor control **IGSS** VGS = 20 VDC, VDS = 0 100 nA • Temperature and lighting controls • Low voltage relays **IDSS** VDS = 0.8 • VDSS TJ = 25 C 200 A VGS = 0 V TJ = 125 C 1 mA **Advantages RDS(on)** VGS = 10 V, ID = 0.5 ID25 35N30 0.100 Q • Easy to mount with 1 screw (TO-247) FH40N30 0.085 Q (isolated mounting screw hole) FM40N30 0.088 Q • Space savings SS Pulse test, t  300 s, duty cycle d < ou < 2 % • High power density IXYS reserves the right to change limits, test conditions, and  dimensions. 91523F (07/00) © 2000 IXYS All rights reserved 

**TO-247 AD (IXFH)** (TAB) 

- ratedUnclamped Inductive Switching (UIS)Unclamped Inductive Switching (UIS) 

- Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) 

91523F (07/00) 

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**IXFH 35N30 IXFH 40N30 IXFM 35N30 IXFM 40N30** 

## **Symbol** 

## **Test Conditions** 

## **Characteristic Values** 

|||(TJ= 25 C, unless otherwise specified)<br>°|(TJ= 25 C, unless otherwise specified)<br>°|(TJ= 25 C, unless otherwise specified)<br>°|(TJ= 25 C, unless otherwise specified)<br>°|(TJ= 25 C, unless otherwise specified)<br>°|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**gfs**|VDS|= 10 V; ID=  0.5 ID25, pulse test|22|25||S|
|**Ciss**||||4800||pF|
|**Coss**||VGS = 0 V, VDS= 25 V, f = 1 MHz||745||pF|
|**Crss**||||280||pF|
|**td(on)**||||20|30|ns|
|**tr**||VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 ID25||60|90|ns|
|**td(off)**||RG= 2<br>(External)||75|100|ns|
|**tf**||||45|90|ns|
|**Qg(on)**||||177|200|nC|
|**Qgs**||VGS = 10 V, VDS= 0.5 • VDSS, ID= 0.5 ID25||28|50|nC|
|**Qgd**||||78|105|nC|
|**RthJC**|||||0.42|K/W|
|**RthCK**||||0.25||K/W|



## **Source-Drain Diode** 

## **Characteristic Values** 

|||||||(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|(TJ= 25 C, unless otherwise specified)|
|---|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**|||||**min.**|**typ.**|**max.**||
|**IS**|VGS = 0 V|||||35N30||35|A|
|||||||40N30||40|A|
|**ISM**|Repetitive;|||||35N30||140|A|
||pulse width limited by T|||pulse width limited by TJM||40N30||160|A|
|**VSD**|IF= IS, VGS= 0 V,<br>Pulse test, t|= 0 V,<br><|= 0 V,<br>300|ie|s, duty cycle d|s, duty cycle d 2 %<br><||1.5|V|
|**trr**|IF= IS, -di/dt = 100 A/|, -di/dt = 100 A/|, -di/dt = 100 A/|, -di/dt = 100 A/ s,<br>uu||TJ=<br>25 C<br>°||200|ns|
||VR= 100 V|||||TJ= 125 C||350|ns|



## **TO-247 AD (IXFH) Outline** 

|Dim.|Millimeter<br>Min.<br>Max.|Inches<br>Min.<br>Max.|
|---|---|---|
|A<br>19.81<br>B<br>20.80|19.81 20.32<br>20.80 21.46|0.780 0.800<br>0.819 0.845|
|C<br>15.75<br>D|15.75 16.26<br>3.55<br>3.65|0.610 0.640<br>0.140 0.144|
|E<br>F|4.32<br>5.49<br>5.4<br>6.2|0.170 0.216<br>0.212 0.244|
|G<br>H|1.65<br>2.13<br>-<br>4.5|0.065 0.084<br>-<br>0.177|
|J<br>K|1.0<br>1.4<br>10.8<br>11.0|0.040 0.055<br>0.426 0.433|
|L<br>M|4.7<br>5.3<br>0.4<br>0.8|0.185 0.209<br>0.016 0.031|
|N|1.5<br>2.49|0.087 0.102|



## **TO-204 AE (IXFM) Outline** 

||iQ||
|---|---|---|
|Dim.|Millimeter<br>Min.<br>Max.<br>iQ|Inches<br>Min.<br>Max.|
|A<br>B|38.61 39.12<br>- 22.22|1.520 1.540<br>- 0.875|
|C<br>D|6.40 11.40<br>1.45<br>1.60|0.252 0.449<br>0.057 0.063|
|E<br>F|1.52<br>3.43<br>30.15<br>BSC|0.060 0.135<br>1.187<br>BSC|
|G<br>H|10.67 11.17<br>5.21<br>5.71|0.420 0.440<br>0.205 0.225|
|J<br>K|16.64 17.14<br>11.18 12.19|0.655 0.675<br>0.440 0.480|
|Q<br>R|3.84<br>4.19<br>25.16 26.66|0.151 0.165<br>0.991 1.050|



IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 

© 2000 IXYS All rights reserved 

2 - 4 

**IXFH 35N30 IXFH 40N30 IXFM 35N30 IXFM 40N30** 

**==> picture [502 x 622] intentionally omitted <==**

© 2000 IXYS All rights reserved 

3 - 4 

**IXFH 35N30 IXFH 40N30 IXFM 35N30 IXFM 40N30** 

## Fig.7 Gate Charge Characteristic Curve 

## Fig.8 Forward Bias Safe Operating Area 

**==> picture [504 x 377] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>10µs<br>VDS = 150V 100 Limited by RDS(on)<br>8 ID = 21A<br>IG = 10mA 100µs<br>6<br>1ms<br>10<br>4<br>10ms<br>2<br>100ms<br>0 1<br>0 25 50 75 100 125 150 175 200 1 10 100 300<br>Gate Charge - nCoulombs VDS - Volts<br>Fig.9 Capacitance Curves Fig.10  Source Current vs. Source<br>80<br>4500 Ciss<br>70<br>4000<br>3500 60<br>f = 1 MHz<br>3000 50<br>VDS = 25V<br>2500<br>40<br>2000 TJ = 125°C<br>30<br>1500 TJ = 25°C<br>1000 Coss 20<br>500 Crss 10<br>0 0<br>0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Vds - Volts VSD - Volts<br> - Volts<br>GE<br>V  - AmperesID<br> - Amperes<br>ID<br>Capacitance - pF<br>**----- End of picture text -----**<br>


Fig.11 Transient Thermal Impedance 

**==> picture [480 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Time - Seconds<br>Thermal Response - K/W<br>**----- End of picture text -----**<br>


© 2000 IXYS All rights reserved 

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- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixfh40n30/mosfet-n-to-247/dp/9359150)
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