# Power MOSFET, N Channel, 75 V, 340 A, 3200 µohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4060230/)

**URL**: https://novapart.co/products/IXFH340N075T2/power-mosfet-n-channel-75-v-340-a-3200-ohm-to-247
**SKU**: IXFH340N075T2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.4600
**Stock**: 10+
**Lead Time**: 169 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | TrenchT2 HiPerFET Series |
| Qualification | - |
| Power Dissipation | 935W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 340A |
| Drain Source On State Resistance | 3200µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4060230/)

## **TrenchT2[TM ] HiPerFET[TM] IXFH340N075T2 Power MOSFET IXFT340N075T2** 

**V =   75V DSS I =   340A D25** 

**R**  **3.2m**  **DS(on)** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **TO-268 (IXFT)** 

|||||||S<br>G<br>;|;|;|
|---|---|---|---|---|---|---|---|---|
||||||||D(Tab)||
|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**||||||
|**VDSS**|TJ = 25C to 175C|75||V|**TO-247**||||
|**VDGR**|TJ = 25C to 175C, RGS= 1M|75||V|**(IXFH)**||||
|**VGSM**|Transient|20||V|||||
|**ID25**<br>**ILRMS**<br>**IDM**|TC = 25C (Chip Capability)<br>Lead Current Limit, RMS<br>TC = 25C, Pulse Width Limited by TJM|340<br>160<br>850||A<br>A<br>A|G<br>S<br>D||D(Tab)||
|**IA**|TC = 25C|170||A|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain|G  = Gate           D      =  Drain||
|**EAS**|TC = 25C|960||mJ|S  = Source      Tab   =  Drain|S  = Source      Tab   =  Drain|S  = Source      Tab   =  Drain||
|**PD**|TC = 25C|935||W|||||
|**TJ**||-55 ... +175|C||||||
|**TJM**||175|C||||||
|**Tstg**<br>**TL**Maximum Lead Temperature for Soldering                     300|Maximum Lead Temperature for Soldering                     300|-55 ... +175<br>Maximum Lead Temperature for Soldering                     300|C<br>°C||**Features**||||
|**TSOLD**|Plastic Body for 10 seconds|260|°C|°C|International Standard Packages|||International Standard Packages|
|**Md**|Mounting Torque (TO-247)                                           1.13/10|Mounting Torque (TO-247)                                           1.13/10 Nm/lb.in.|Nm/lb.in.||175°C Operating Temperature||175°C Operating Temperature||
|**Weight**|TO-247<br>TO-268|6<br>4||g<br>g|High Current Handling Capability<br>Avalanche Rated<br>Fast Intrinsic Diode|||High Current Handling Capability|
||||||Low RDS(on)||||



## **Advantages** 

||||**Advantages**|**Advantages**|
|---|---|---|---|---|
|**Symbol**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**|**Test Conditions                                             Characteristic Values**<br>**Advantages**||
|(TJ= 25C Unless Otherwise Specified)<br>**BVDSS**|C Unless Otherwise Specified)<br>VGS = 0V, ID= 1mA|**Min.       Typ.      Max.**<br>75|**Min.       Typ.      Max.**<br>75|**Min.       Typ.      Max.**<br>V<br>Easy to Mount<br>Space Savings<br>~~_~~|
|**VGS(th)**|VDS = VGS, ID= 3mA|2.0|2.0<br>4.0    V|4.0    V<br>High Power Density<br>~~a~~|
|**IGSS**|VGS =20V, VDS= 0V||200  nA<br>~~a~~||
|**IDSS**|VDS = VDSS, VGS= 0V<br>T|TJ= 150C|25<br>1.5|25A<br>1.5mA<br>**Applications**<br>DC/DC Converters and Off-line UPS<br>~~-~~|
|**RDS(on)**|VGS = 10V, ID= 100A, Note 1||3.2  m|3.2  m<br>Primary- Side Switch<br>High Current Switching Applications|



DS100194A(5/21) 

© 2021 Littelfuse, Inc. 

**IXFH340N075T2 IXFT340N075T2** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>  <br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>  <br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**gfs** VDS= 10V, ID= 60A,  Note 1                           65|110|S|
|**Ciss**<br> <br>**Coss**VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|19<br>2230<br>490|nF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|1.7||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 100A<br>RG= 1(External)|26<br>50<br>60<br>35|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Q**<br>|300<br>68<br>70|nC<br>nC<br>nC|
|**gd**<br>|||
|**RthJC**<br> <br>**RthCH**<br>TO-247|<br>0.21|0.16C/W<br>C/W|



## **Source-Drain Diode** 

|**Source-Drain Diode**|**Source-Drain Diode**|**Source-Drain Diode**|
|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>  <br>|||
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**|
|**IS**VGS= 0V||340<br>A|
|**ISM**Repetitive, Pulse Width Limited by TJM||1360<br>A|
|**VSD**IF= 100A, VGS= 0V,  Note 1||1.3<br>V|
|**trr**<br> <br>**IRM**<br>**QRM**<br> <br>IF= 170A, VGS= 0V<br>-di/dt = 100A/s<br>VR= 37.5V|75<br> 4.4 <br>165|ns<br> A<br>nC|
||||



Note  1. Pulse test, t  300s; duty cycle, d  2%. 

Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXFH340N075T2 IXFT340N075T2** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>350<br>VGS = 15V<br>10V<br>300 9V<br>8V<br>250<br>7V<br>200<br>6V<br>150<br>5V<br>100<br>50<br>4V<br>0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 150ºC** 

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350<br>VGS = 15V<br>10V<br>300 9V<br>8V<br>250 7V<br>200 6V<br>150<br>100 5V<br>50<br>4V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 170A Value vs.<br>Drain Current<br>2.4<br>2.2<br>2.0 TJ = 175ºC<br>1.8<br>1.6 VGS = 10V<br>15V<br>1.4<br>1.2<br>TJ = 25ºC<br>1.0<br>0.8<br>0.6<br>0 40 80 120 160 200 240 280 320 360<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>400<br>VGS = 15V<br>10V<br>350<br>8V<br>7V<br>300<br>250<br>6V<br>200<br>150<br>5V<br>100<br>50<br>4V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 170A Value vs. Junction Temperature** 

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2.4<br>2.2 VGS = 10V<br>2.0<br>1.8 I D = 340A<br>1.6<br>I D = 170A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br>Fig. 6. Drain Current vs. Case Temperature<br>180<br>External Lead Current Limit<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. 

**IXFH340N075T2 IXFT340N075T2** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance Fig. 8. Transconductance<br>200 240<br>TJ = - 40ºC<br>180<br>200<br>160<br>140 25ºC<br>160<br>120<br>100 120 150ºC<br>80<br>TJ = 150ºC25ºC 80<br>60 - 40ºC<br>40<br>40<br>20<br>0 0<br>2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 100 120 140 160 180 200 220<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>300 10<br>9 VDS = 37.5V<br>250 I D = 170A<br>8 I G = 10mA<br>7<br>200<br>6<br>150 5<br>TJ = 150ºC 4<br>100<br>3<br>TJ = 25ºC 2<br>50<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 50 100 150 200 250 300<br>VSD - Volts QG - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 1,000<br>f = 1 MHz RDS(on) Limit<br>25µs<br>10,000 Ciss 100 External Lead Current Limit  100µs<br>100ms 1ms<br>Coss<br>1,000 10 DC<br>TJ = 175ºC<br>Crss TC = 25ºC 10ms<br>Single Pulse<br>100 1<br>0 5 10 15 20 25 30 35 40 1 10 100<br>VDS - Volts VDS - Volts<br> - Amperes  - Siemens<br>ID g f s<br>Volts<br> -<br> - Amperes GS<br>IS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

**IXFH340N075T2 IXFT340N075T2** 

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**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br>Junction Temperature Drain Current<br>70 70<br>RG = 1Ω ,  VGS = 10V RG = 1Ω ,  VGS = 10V<br>65 VDS = 37.5V   65 VDS = 37.5V<br>TJ = 125ºC<br>60 60<br>I  D = 200A<br>55 55<br>50 50<br>I  D = 100A TJ = 25ºC<br>45 45<br>40 40<br>25 35 45 55 65 75 85 95 105 115 125 100 110 120 130 140 150 160 170 180 190 200<br>TJ - Degrees Centigrade ID - Amperes<br>t - Nanoseconds r t - Nanoseconds r<br>**----- End of picture text -----**<br>


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Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br>Gate Resistance Junction Temperature<br>400 90 50 90<br>350 Tt rJ = 125ºC , VGStd(on) = 10V 80 45 Rt fG = 1Ω , VGStd(off)= 10V 85<br>VDS = 37.5V         I D = 200A VDS = 37.5V<br>300 70 40 80<br>250 60 35 75<br>200 50 30 I D = 100A, 200A 70<br>150 I D = 100A 40 25 65<br>100 30 20 60<br>50 20 15 55<br>0 10 10 50<br>1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br>Drain Current Gate Resistance<br>48 85 500 400<br>t f td(off) 450 t f td(off) 360<br>44 RG = 1Ω , VGS = 10V 80 TJ = 125ºC , VGS = 10V<br>VDS = 37.5V       400 VDS = 37.5V               320<br>40 75 350 280<br>300 240<br>36 70<br>250 200<br>32 TJ = 25ºC, 125ºC 65 200 I D = 200A 160<br>I D = 100A<br>28 60 150 120<br>100 80<br>24 55<br>50 40<br>20 50 0 0<br>100 110 120 130 140 150 160 170 180 190 200 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>ID - Amperes RG - Ohms<br>t<br>t<br> d(on)<br>t - Nanoseconds r t - Nanoseconds f  d(off)<br>- Nanoseconds<br>- Nanoseconds<br> d(off)t  d(off)t<br>t - Nanoseconds f t - Nanoseconds f<br>- Nanoseconds - Nanoseconds<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. 

**IXFH340N075T2 IXFT340N075T2** 

**Fig. 19. Maximum Transient Thermal Impedance** 

1.00 

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**----- Start of picture text -----**<br>
Fig. 19. Maximum Transient Thermal Impedance<br>0.20 afaf<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br>K / W<br> -<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS REF: F_340N075T2 (V8) 5-18-21 

**IXFH340N075T2 IXFT340N075T2** 

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**----- Start of picture text -----**<br>
TO-268 Outline :<br>'<br>|<br>-<br>ra<br>all<br>el ble<br>*<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TO-247 Outline<br>eae imePe—ET1 4|<br>rill @©-ff [s] 02 (0)<br>ot A Att<br>1 eg |<br>ll<br>H ot L et<br>L<br>me.C baTe | 1 - Gate<br>2,4 - Drain<br>/OACOF 3 - Source<br>**----- End of picture text -----**<br>


Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2021 Littelfuse, Inc. 



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---

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