# Power MOSFET, N Channel, 650 V, 26 A, 0.13 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3996598/)

**URL**: https://novapart.co/products/IXFH26N65X2/power-mosfet-n-channel-650-v-26-a-013-ohm-to-247
**SKU**: IXFH26N65X2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €7.0700
**Stock**: 200+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HiPerFET Series |
| Qualification | - |
| Power Dissipation | 460W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 26A |
| Drain Source On State Resistance | 0.13ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3996598/)

## **X2-Class HiPerFET[TM] Power MOSFET** 

**IXFA26N65X2 IXFP26N65X2 IXFH26N65X2** 

**V =   650V DSS I =   26A D25 R**  **130m**  **DS(on)** 

**==> picture [519 x 565] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|D|
|N-Channel Enhancement Mode|
|TO-263|
|Avalanche Rated|
|G|(IXFA)|
|G|
|S|S|
|ae|
|D (Tab)|
|TO-220|
|Symbol|Test Conditions|Maximum Ratings|(IXFP)|
|VDSS|TJ|= 25C to 150C|650|V|
|V|oO|DGR|TJ|= 25C to 150C, RGS = 1M|650|V|
|VGSS|Continuous|30|V|GD|
|VGSM|Transient|40|V|S|D (Tab)|
|ID25|TC|= 25C|26|A|TO-247|
|IDM|TC|= 25C, Pulse Width Limited by TJM|36|A|(IXFH)|
|IA|TC|= 25C|5|A|
|EAS|TC|= 25C|1|J|
|.|G|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      50                   V/ns|D|S|D (Tab)|
|PD|TC|= 25C|460|W|
|TJ|-55 ... +150|C|G  = Gate           D      =  DrainS  = Source       Tab   =  Drain|
|TJM|150|C|
|T|-55 ... +150|C|
|stg|
|TL|Maximum Lead Temperature for Soldering                    300|°C|Features|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|FMCd|Mounting Torque (TO-220 & TO-247)Mounting Force   (TO-263)                      10..65 / 2.2..14.6                    N/lb1.13 / 10         Nm/lb.in||International Standard PackagesLow RAvalanche RatedDS(ON) and QG|
|Weight|TO-263|2.5|g||Low Package Inductance|
|TO-220|3.0|g|
|TO-247|6.0                        g|
|Advantages|
||High Power Density|
|Symbol|Test Conditions                                                Characteristic Values||
|(TJ = 25C, Unless Otherwise Specified)|Min.       Typ.         Max.||Easy to MountSpace Savings|
|BVDSS|VGS|= 0V, ID = 250µA|650|||V|
|VGS(th)|VDS|= VGS, ID = 2.5mA|3.5|5.0      V|_|Applications|
|IGSS|VGS|= 30V, VDS = 0V||_|100   nA||Switch-Mode and Resonant-Mode|
|Power Supplies|
|IDSS|VDS|= VDSS, VGS = 0V|25    A||DC-DC Converters|
|TJ = 125C|1  mA|7||PFC Circuits|
|RDS(on)|VGS|= 10V, ID = 0.5|•|ID25, Note 1|130  m||AC and DC Motor Drives|

**----- End of picture text -----**<br>


- DS(ON) and QG and QGG 

-  

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- Robotics and Servo Controls 

DS100960B(7/21) 

©2021 Littelfuse, Inc. 

## **IXFA26N65X2     IXFP26N65X2 IXFH26N65X2** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                   9.5|16.0|S|
|**RGi**<br>Gate Input Resistance<br>|0.6||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2450<br>1360<br>1.2|pF<br>pF<br>pF|
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|90<br>380|pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|40<br>53<br>50<br>17|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|45<br>18<br>15|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21|0.27C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||26       A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||104       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 13A, -di/dt = 100A/µs<br>VR= 100V|230<br>1.6<br>12|ns<br>C<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

Littelfuse reserves the right to change limits, test conditions, and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXFA26N65X2     IXFP26N65X2 IXFH26N65X2** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>26<br>24 VGS = 10V<br>9V<br>22<br>20<br>18<br>16 8V<br>14<br>12<br>10<br>7V<br>8<br>6<br>4<br>6V<br>2<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>60<br>VGS = 10V<br>50<br>40<br>9V<br>30<br>8V<br>20<br>7V<br>10<br>6V<br>0<br>0 5 10 15 20 25<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


## **Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature** 

**==> picture [168 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
26 4.0<br>24 VGS         9V   = 10V 3.5 VGS = 10V<br>22<br>20 8V 3.0<br>18<br>16 2.5 I  D = 26A<br>14<br>7V 2.0<br>12<br>I  D = 13A<br>10 1.5<br>8 6V<br>1.0<br>6<br>4<br>0.5<br>5V<br>2<br>0 0.0<br>0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>5.0 1.3<br>4.5 VGS = 10V  1.2<br>4.0<br>1.1 BVDSS<br>TJ = 125 [o] C<br>3.5<br>1.0<br>3.0<br>0.9<br>2.5<br>0.8<br>2.0 VGS(th)<br>T J  = 25 [o] C 0.7<br>1.5<br>1.0 0.6<br>0.5 0.5<br>0 10 20 30 40 50 60 -50 -30 -10 10 30 50 70 90 110 130 150<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

## **IXFA26N65X2     IXFP26N65X2 IXFH26N65X2** 

**==> picture [538 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>30 25<br>VDS = 20V<br>25<br>20<br>20<br>15<br>15<br>TJ = 125 [o] C<br>10<br>10 25 [o] C<br>5<br>5 - 40 [o] C<br>0 0<br>-50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**==> picture [537 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>30 120<br>VDS = 20V<br>25 TJ = - 40 [o] C 100<br>20 80<br>25 [o] C<br>15 60<br>125 [o] C<br>TJ = 125 [o] C<br>10 40<br>TJ = 25 [o] C<br>5 20<br>0 0<br>0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 10,000<br>9  V DS = 325V<br>8  I D = 13A 1,000 Ciss<br> I G = 10mA<br>7<br>6 100<br>5 Coss<br>4 10<br>3<br>2 1<br>f = 1 MHz  Crss<br>1<br>0 0<br>0 5 10 15 20 25 30 35 40 45 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

## **IXFA26N65X2     IXFP26N65X2 IXFH26N65X2** 

**==> picture [535 x 448] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>20 100<br>RDS(on) Limit<br>16<br>10<br>100µs<br>12<br>1<br>8<br>1ms<br>0.1  TJ = 150 [o] C<br>4 10ms<br> TC = 25 [o] C    DC<br>Single Pulse<br>0 0.01<br>0 100 200 300 400 500 600 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


©2021 Littelfuse, Inc. 

IXYS REF: F_26N65X2 (Z5-S602) 4-04-19 

## **IXFA26N65X2     IXFP26N65X2 IXFH26N65X2** 

**==> picture [177 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-263 Outline<br>E ekA et<br>a<br>| qT<br>3 5<br>e b<br>| 9<br>\ a=<br>Th 1 HeHeH<br>Ly) GJ i} +<br>ee| at -<br>cH Oneal|<br>goer [P""4lla<br>eAilnnch nl Zs7Ey<br>T aifft<br>Ilo<br>1 - Gate (J KI<br>b4 | BY<br>2,4 - Drain GY oY<br>3 - Source seaMINIMUMadPCB FOOToolPRINTad(R=<br>TO-220 Outline<br>: A<br>tr i<br>ae anen<br>| HW [7<br>D<br>O 1<br>123<br>tie A L<br>u<br>L<br>ce<br>Kb<br>3Xb2<br>1 - Gate<br>2,4 - Drain<br>p=] 3 - Source<br>TO-247 Outline<br>abB=] orl [ok @ [D<br>7 TL 4 [5] pe<br>Tr | at<br>ee<br>1 2 5 aanomen]<br>i7 Fes] 1 eS 1<br>I<br>]<br>Al aC. oir—tIbf 1 - Gate<br>2,4 - Drain<br>[@]_ [J] [MICA)] 3 - Source<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions, and dimensions. 

**IXFA26N65X2     IXFP26N65X2 IXFH26N65X2** ~~sd~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

©2021 Littelfuse, Inc. 



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