# Power MOSFET, N Channel, 800 V, 24 A, 0.4 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757895/)

**URL**: https://novapart.co/products/IXFH24N80P/power-mosfet-n-channel-800-v-24-a-04-ohm-to-247
**SKU**: IXFH24N80P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €7.5700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 650W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 24A |
| Drain Source On State Resistance | 0.4ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757895/)

## **PolarHV[TM ] HiPerFET Power MOSFET** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

**IXFH 24N80P IXFK 24N80P IXFT 24N80P** 

**V =  800     V DSS I =    24     A D25 R ≤ 400 m Ω DS(on) t ≤ 250  ns rr** 

|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**TO-247 (IXFH)**|**TO-247 (IXFH)**|||||
|---|---|---|---|---|---|---|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C||800|V|||||||
|**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ||800|V|||||||
|**VGSS**|Continuous||±30|V|||||||
|**VGSM**|Transient||±40|V||G D S|D (TAB)|D (TAB)|||
|**ID25**|TC = 25°C||24|A|||||||
|**IDM**|TC = 25°C, pulse width limited by TJM||55|A|**TO-268 (IXFT) Case Style**||||||
|**IAR**|TC = 25°C||12|A|||||||
|**EAR**|TC = 25°C||50|mJ|||||||
|**EAS**<br>TC = 25°C<br>1.5<br>J<br>~~a~~||||||G|||||
|**dv/dt**|IS<br>≤IDM, di/dt≤100 A/μs, VDD ≤VDSS,||10|V/ns||S|||||
||TJ ≤150°C, RG= 2Ω||||||D (TAB)||||
|**PD**<br>**TJ**|TC = 25°C||650<br>-55 ... +150|W<br>°C|**TO-264 AA (IXFK)**||||||
|**TJM**|||150|°C|||||||
|**Tstg**|||-55 ... +150|°C|||||||
|**Md**|Mounting torque (TO-247 & TO-264)                        1.13/10|Mounting torque (TO-247 & TO-264)                        1.13/10|Mounting torque (TO-247 & TO-264)                        1.13/10 Nm/lb.in.||||||||
|**Weight**|TO-247                                                                             6|TO-247                                                                             6|TO-247                                                                             6|g||G|||||
||TO-268|5|5|g||S<br>D||(TAB)|||
|TO-264                                                                            10|TO-264                                                                            10|TO-264                                                                            10|TO-264                                                                            10|g|||||||
|**TL**<br>**TSOLD**|1.6 mm (0.062 in.) from case for 10 s<br>Plastic body for 10 s||300<br>260|°C<br>°C|G =  Gate<br>S =  Source|G =  Gate<br>D     = Drain<br>S =  Source<br>Tab = Drain|D     = Drain<br>Tab = Drain||||
||||||**Features**||||||
|**Symbol**<br>(TJ= 25°C, unless otherwise specified)<br>**BVDSS**<br>**VGS(th)**<br>**IGSS**<br>**IDSS**<br>**RDS(on)**|**Test Conditions**<br>C, unless otherwise specified)<br>VGS = 0 V, ID= 250μA<br>VDS = VGS, ID= 4 mA<br>VGS =±30 V, VDS= 0 V<br>VDS =  VDSS<br>VGS= 0 V<br>TJ= 125°C<br>VGS = 10 V, ID= 0.5 ID25<br>Pulse test, t≤300μs, duty cycle d≤2 %|International standard packages<br>Fast recovery diode<br>Unclamped Inductive Switching (UIS)<br>rated<br>Low package inductance<br>- easy to drive and to protect<br>**Advantages**<br>Easy to mount<br>Space savings<br>High power density<br>**Characteristic Values**<br>**Min.    Typ.**<br>**Max.**<br>800<br>V<br>3.0<br>5.0<br>V<br>±100<br>nA<br>25<br>μA<br>1000<br>μA<br>400<br>mΩ<br>~~+:~~<br>~~| |~~<br>.<br>~~=_a!~~|||||||||



DS99572E(07/06) 

© 2006 IXYS All rights reserved 

**IXFH 24N80P   IXFK 24N80P IXFT 24N80P** 

|**Symbol**|**Test Conditions**|(TJ= 25°C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**Characteristic Values**<br>C, unless otherwise specified)|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|**TO-247 AD (IXFH) Outline**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfs**<br>**Ciss**<br>**Coss**<br>**Crss**|VDS = 20 V; ID= 0.5 ID25, pulse test<br>VGS = 0 V, VDS= 25 V, f = 1 MHz||**Min.**<br>15||**Typ.**<br>25<br>7200<br>470<br>26||**Max.**|S<br>pF<br>pF<br>pF||1        2           3<br>a<br>E<br>A2<br>ae+f<br>4<br>toais<br>rt Of<br>ao<br>|<br>oP<br>ul~<br>L||||||
|**td(on)**<br>**tr**<br>**td(off)**|VGS = 10 V, VDS= 0.5 ID25<br>RG<br>=2Ω(External)||||32<br>27<br>75|||ns<br>ns<br>ns||b1<br>‘<br>--|||||<br>b2Le|Al||<br>kc|
|**tf**|||||24|||ns||Dim.|Millimeter|||Inches||
|**Qg(on)**|||||105|||nC||A|Min.<br>4.7||Max.<br>5.3|Min.<br>.185|Max.<br>.209|
|**Qgs**<br>**Qgd**|VGS = 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||||30<br>33|||nC<br>nC||A1<br>A2<br>b|2.2<br>2.2<br>1.0||2.54<br>2.6<br>1.4|.087<br>.059<br>.040|.102<br>.098<br>.055|
|||||||||||b1|1.65||2.13|.065|.084|
|**RthJC**|||||||0.19|°C/W||b2|2.87||3.12|.113|.123|
|**RthCS**|TO-247||||0.21|||°C/W||C<br>D|.4<br>20.80||.8<br>21.46|.016<br>.819|.031<br>.845|
|**RthCS**|TO-264|0.15|0.15|0.15|0.15|0.15|0.15|0.15°C/W||E|15.75||16.26|.610|.640|
|||||||||||e|5.20||5.72|0.205|0.225|
|||||||||||L|19.81||20.32|.780|.800|
|**Source-Drain Diode**|**Source-Drain Diode**||**Characteristic Values**|||||||L1|||4.50||.177|
|||(TJ= 25°C, unless otherwise specified)|C, unless otherwise specified)|C, unless otherwise specified)||||||∅P<br>Q|3.55<br>5.89||3.65<br>6.40|.140<br>0.232|.144<br> 0.252|
|**Symbol**|**Test Conditions**||**Min.**||**Typ.**||**Max.**|||R|4.32||5.49|.170|.216|
|**IS**<br>**ISM**<br>**VSD**|VGS= 0 V<br>Repetitive<br>IF= IS, VGS= 0 V,||||||24<br>55<br>1.5|A<br>A<br>V<br>**TO-264 (IXFK) Outline**|**TO-264 (IXFK) Outline**<br>S<br>6.15 BSC<br>242 <br>=<br>~~|~~<br>a<br>:<br>“+ Ea}<br>7||||||BSC<br>~~|~~<br> ryr|
||Pulse test, t≤300μs, duty cycle d|s, duty cycle d≤2 %||||||||||||||
|**trr**<br>**QRM**|IF= 25A, -di/dt = 100 A/μs<br>VR= 100V||||0.8||250|ns<br>μC|I" ¥||1<br>2|3|t|||
|**IRM**|**RM**|**RM**|**RM**|**RM**|**RM**6.0|||A||||||||



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TO-268 (IXFT)Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 IXYS reserves the right to change limits, test conditions,  and  dimensions.<br>IXYS MOSFETs  and IGBTs are covered  by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734  B2<br>  one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728  B1 6,583,505 6,710,463 6,771,478 B2<br>**----- End of picture text -----**<br>


**IXFH 24N80P   IXFK 24N80P IXFT 24N80P** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>24 55<br>22 V GS = 10V   50 V             7VGS = 10V<br>20 45<br>18<br>6V 40<br>16 6V<br>35<br>14<br>30<br>12<br>25<br>10<br>5V 20<br>8<br>15<br>6<br>4 10 5V<br>2 5<br>0 0<br>0 1 2 3 4 5 6 7 8 9 0 3 6 9 12 15 18 21 24 27 30<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ 125ºC** 

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**----- Start of picture text -----**<br>
24<br>VGS = 10V<br>22<br>              6V<br>20<br>18<br>16 5V<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.1<br>2.8  V GS = 10V<br>2.5<br>2.2<br>1.9 I D = 24A<br>1.6 I D = 12A<br>1.3<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 5. RDS(on) Normalized to ID = 12A Value** 

**vs. Drain Current** 

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3<br>2.8  VGS = 10V<br>2.6 TJ = 125ºC<br>2.4<br>2.2<br>2<br>1.8<br>1.6<br>1.4<br>1.2 TJ = 25 º C<br>1<br>0.8<br>0 5 10 15 20 25 30 35 40 45 50 55<br>ID - Amperes<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Maximum Drain Current vs. Case Temperature** 

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**----- Start of picture text -----**<br>
26<br>24<br>22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2006 IXYS All rights reserved 

**IXFH 24N80P   IXFK 24N80P IXFT 24N80P** 

**Fig. 7. Input Admittance** 

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**----- Start of picture text -----**<br>
40<br>36<br>32<br>28<br>24<br>20<br>TJ = 125ºC<br>16           25ºC<br>       - 40ºC<br>12<br>8<br>4<br>0<br>3 3.5 4 4.5 5 5.5 6<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Forward Voltage Drop of Intrinsic Diode** 

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**----- Start of picture text -----**<br>
36<br>32<br>28<br>24<br>20<br>16 TJ = 125ºC<br>12<br>TJ  = 25ºC<br>8<br>4<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>VSD - Volts<br>Fig. 11. Capacitance<br>10,000<br>Ciss<br>1,000<br>Coss<br>100<br> f = 1 MHz   Crss<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 8. Transconductance** 

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**----- Start of picture text -----**<br>
65<br>60<br>55<br>50<br>45<br>40 TJ = - 40ºC<br>35           25ºC<br>        125ºC<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9  V DS = 400V<br> I D = 12A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>QG - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Maximum Transient Thermal Resistance** 

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1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>R<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions,  and  dimensions. 

F_24N80P (8J) 6-22-06.xls 

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