# Power MOSFET, N Channel, 500 V, 22 A, 0.27 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757918/)

**URL**: https://novapart.co/products/IXFH22N50P/power-mosfet-n-channel-500-v-22-a-027-ohm-to-247
**SKU**: IXFH22N50P
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.0500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar HiPerFET Series |
| Qualification | - |
| Power Dissipation | 350W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 22A |
| Drain Source On State Resistance | 0.27ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757918/)

## **Polar[TM ] Power MOSFET HiPerFET[TM]** 

## **IXFV22N50P IXFV22N50PS IXFH22N50P** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|500|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|500|V|
|**VGSS**|Continuous|±30|V|
|**VGSM**|Transient|±40|V|
|**ID25**|TC = 25°C|22|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|50|A|
|**IA**|TC = 25°C|22|A|
|**EAS**|TC = 25°C|750|mJ|
|**dV/dt**|IS<br>≤IDM,  VDD ≤VDSS, TJ ≤150°C|10|V/ns|
|**PD**|TC = 25°C|350|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in.|
|**FC**|Mounting Force (PLUS 220) 11..65/2.5..14.6|11..65/2.5..14.6|N/lb.|
|**Weight**|TO-247|6|g|
||PLUS 220 types|4                        g|4                        g|



**V =  500V DSS I =  22A D25 R ≤ 270m Ω DS(on) t ≤ 200ns rr** 

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PLUS220 (IXFV)<br>G<br>DS<br>D  (TAB)<br>**----- End of picture text -----**<br>


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PLUS220SMD (IXFV_S)<br>G<br>S<br>D (TAB)<br>**----- End of picture text -----**<br>


## **TO-247 (IXFH)** 

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D  (TAB)<br>**----- End of picture text -----**<br>


G =  Gate D      =  Drain S =  Source TAB  =  Drain 

## **Features** 

International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance 

## **Advantages** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|**Min.        Typ.       Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>500|~~—~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 2.5mA<br>3.0<br>~~rs~~|5.5<br>~~—~~<br>~~||~~<br>~~rs~~|5.5<br>V|
|**IGSS**<br>VGS =±30V, VDS= 0V<br>~~rs~~|±<br>~~rs~~|±100<br>nA|
|**IDSS**<br>VDS =  VDSS, VGS=  0V<br>TJ= 125°C<br>250    μA<br>~~rs~~|15<br>250    μA<br>~~rs~~<br>~~[~~|15<br>μA<br>250    μA|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1|270<br>~~—~~|270 mΩ|



High Power Density Easy to Mount Space Savings 

## **Applications** 

Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 

DS99358G(07/09) 

© 2009 IXYS CORPORATION, All Rights Reserved 

**IXFV22N50PS   IXFV22N50P IXFH22N50P** 

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**----- Start of picture text -----**<br>
 PLUS220 (IXFV)  Outline<br>E1E L2 A1A E1<br>D1<br>D<br>L3<br>L1<br>L<br>2X e 3X b cA2<br>Terminals: 1 - Gate 2 - Drain<br>3 - Source TAB - Drain<br>A<br>A1<br>A2<br>b<br>c<br>D<br>D1<br>E<br>E1<br>e<br>L<br>L1<br>L2<br>L3<br>**----- End of picture text -----**<br>


|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.         Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.         Max.**|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.        Typ.         Max.**|
|---|---|---|
|**gfs**<br>VDS = 20V, ID= 0.5 • ID25, Note 1                   12|20|S|
|**Ciss**<br> <br>**Coss**<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2880<br>310<br>29|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10Ω(External)|22<br>25<br>72<br>21|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br> <br>|50<br>16<br>18<br>|nC<br>nC<br>nC<br> °|
|**RthJC**<br>**RthCS**<br>(TO-247 & PLUS220)<br>|<br>0.25|0.35 C/W<br>°C/W|



## **Source-Drain Diode** 

|**Symbol**|**Test Conditions**|**Characteristic**|**Characteristic**|**Values**||
|---|---|---|---|---|---|
|(TJ= 25°C|Unless Otherwise Specified)|**Min.**|**Typ. **|**Max.**||
|**IS**|VGS= 0V|||22|A|
|**ISM**<br>**VSD**|Repetitive, Pulse Width Limited by TJM<br>IF= IS, VGS= 0V, Note 1||<br>|88<br>1.5|A<br>V|
|**trr**|IF= 22A, -di/dt = 100A/μs|||200|ns|
|**QRM**<br>**IRM**|VR= 100V, VGS = 0V|<br>|0.7<br>7.0||μC<br>A|



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  TO-247 (IXFH) Outline<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
trr IF = 22A, -di/dt = 100A/μs               200 ns<br>QRM VR = 100V, VGS = 0V                   0.7 μC<br>IRM                   7.0 A ∅ P<br>Note 1:  Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.<br>PLUS220SMD (IXFV_S)  Outline<br>e<br>E1E L2 A1A E1<br>A Dim. Millimeter Inches<br>A1 Min. Max. Min. Max.<br>A2 A 4.7 5.3 .185 .209<br>D A3 A3b AA12 2.22.2 2.542.6 .087.059 .102.098<br>c<br>L3 b 1.0 1.4 .040 .055<br>L1 L L4 DD1E bCb12 1.652.87.4 2.133.12.8 .065.113.016 .084.123.031<br>e 2X b c E1 D 20.80 21.46 .819 .845<br>A2 e E 15.75 16.26 .610 .640<br>L<br>e 5.20 5.72 0.205 0.225<br>L1<br>L 19.81 20.32 .780 .800<br>L2 L1 4.50 .177<br>L3<br>Terminals: 1 - Gate 2 - Drain ∅P 3.55 3.65 .140 .144<br>L4<br>3 - Source TAB - Drain Q 5.89 6.40 0.232 0.252<br>R 4.32 5.49 .170 .216<br>S 6.15     BSC 242    BSC<br>IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br>IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2<br>by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br>


**IXFV22N50PS   IXFV22N50P IXFH22N50P** 

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Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics<br>@ 25ºC @ 25ºC<br>22 55<br>20 VGS = 10V 50 VGS = 10V<br>        8V            8V<br>18         7V 45<br>16 40<br>7V<br>14 35<br>12 30<br>10 6V 25<br>6V<br>8 20<br>6 15<br>4 10<br>5V<br>2 5 5V<br>0 0<br>0 1 2 3 4 5 6 7 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br>Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 11A Value<br>@ 125ºC vs. Junction Temperature<br>22 3.2<br>20 V         7VGS = 10V V GS = 10V<br>2.8<br>18<br>16 6V 2.4<br>14 I D = 22A<br>2.0<br>12 I D = 11A<br>10<br>1.6<br>8<br>6 1.2<br>5V<br>4<br>0.8<br>2<br>0 0.4<br>0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 11A Value Fig. 6. Maximum Drain Current vs.<br> vs. Drain Current Case Temperature<br>3.4 24<br>VGS = 10V<br>3.0 20<br>TJ = 125ºC<br>2.6<br>16<br>2.2<br>12<br>1.8<br>8<br>1.4 T J  = 25ºC<br>4<br>1.0<br>0.6 0<br>0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150<br>ID - Amperes TC - Degrees Centigrade<br> - Amperes  - Amperes<br>ID ID<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

**IXFV22N50PS   IXFV22N50P IXFH22N50P** 

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Fig. 7. Input Admittance<br>40<br>35<br>30<br>25 TJ = 125ºC<br>          25ºC<br>        - 40ºC<br>20<br>15<br>10<br>5<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 8. Transconductance<br>40<br>TJ = - 40ºC<br>35<br>30<br>25ºC<br>25<br>125ºC<br>20<br>15<br>10<br>5<br>0<br>0 4 8 12 16 20 24 28 32 36<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 9. Forward Voltage Drop of Intrinsic Diode** 

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80<br>70<br>60<br>50<br>40<br>30 TJ = 125 º C<br>20<br>TJ  = 25ºC<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

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**----- Start of picture text -----**<br>
10<br>9  VDS = 250V<br> I D = 11A<br>8<br> I G = 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 11. Capacitance** 

**Fig. 12. Forward-Bias Safe Operating Area** 

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10,000 100.0<br>f = 1 MHz  RDS(on) Limit<br>25µs<br>Ciss 100µs<br>1,000 10.0<br>C oss<br>100 1.0<br>1ms<br>T J  = 150ºC<br>TC = 25ºC<br>Crss Single Pulse  10ms<br>DC 100ms<br>10 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFV22N50PS   IXFV22N50P IXFH22N50P** 

## **Fig. 13. Maximum Transient Thermal Impedance** 

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1.00<br>0.10<br>0.01<br>0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_22N50P(63)07-22-09-B 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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