# Power MOSFET, N Channel, 250 V, 170 A, 6100 µohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930509/)

**URL**: https://novapart.co/products/IXFH170N25X3/power-mosfet-n-channel-250-v-170-a-6100-ohm-to-247
**SKU**: IXFH170N25X3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €10.3100
**Stock**: 50+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | X3-Class HiPerFET Series |
| Qualification | - |
| Power Dissipation | 890W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 250V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 170A |
| Drain Source On State Resistance | 6100µohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930509/)

## (Co Preliminary Technical Information 

## **X3-Class HiPerFET[TM] Power MOSFET** 

**IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3** 

**V =   250V DSS I =   170A D25 R  7.4m  DS(on)** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

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||||||||
|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Maximum Ratings|
|VDSS|TJ|= 25C to 150C|250|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|250|V|
|VGSS|Continuous|20|V|
|VGSM|Transient|30|V|
|ID25|TC|= 25C|170|A|
|I|External Lead Current Limit|160|A|
|L(RMS)|
|IDM|TC|= 25C, Pulse Width Limited by TJM|400|A|
|IA|TC|= 25C|85|A|
|E|ee|AS|TC|= 25C|2.3|J|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      20                   V/ns|
|PD|TC|= 25C|890|W|
|TJ|-55 ... +150|C|
|TJM|150|C|
|Tstg|-55 ... +150|C|
|TL|Maximum Lead Temperature for Soldering                    300|°C|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|Md|Mounting Torque (TO-247 & TO-264)|1.13 / 10         Nm/lb.in|
|Weight|TO-268HV|4                        g|
|TO-247|6                         g|
|TO-264|10                         g|

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## **TO-268HV (IXFT)** 

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G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


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TO-247 (IXFH)<br>**----- End of picture text -----**<br>


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G OA<br>D<br>S , D (Tab)<br>TO-264 (IXFK)<br>G<br>D<br>D (Tab)<br>S<br>G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain<br>**----- End of picture text -----**<br>


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|||
|---|---|
|Features|
||International Standard Packages|
||Low RDS(ON) and QG|
||Avalanche Rated|
||Low Package Inductance|

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## **Advantages** 

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|||||||||
|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions                                                Characteristic Values|
|(TJ = 25C, Unless Otherwise Specified)|Min.       Typ.         Max.||High Power Density|
|BVDSS|VGS|= 0V, ID = 1mA|250|V||Easy to Mount|
||Space Savings|
|VGS(th)|VDS|= VGS, ID = 4mA|2.5|4.5      V|a|
|IGSS|VGS|= 20V, VDS = 0V|100   nA|Applications|
|IDSS|VDS|= V                                       TDSS, VGS = 0V|J = 125C|1  mA        10    A|   Power SuppliesSwitch-Mode and Resonant-Mode|
|RDS(on)|VGS|= 10V, ID = 0.5|•|ID25, Note 1|6.1         7.4  m||DC-DC ConvertersPFC Circuits|
||AC and DC Motor Drives|
||Robotics and Servo Controls|

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DS100809C(11/17) 

© 2017 IXYS CORPORATION, All Rights Reserved. 

**IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**||**Typ.**||**Max**||
|**gfs**<br>VDS= 10V, ID= 60A, Note 1                              66||110||S||
|**RGi**<br>Gate Input Resistance<br>||1.3||||
|||||||
|**Ciss**<br>**Coss**<br>**Crss**|<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>|13.5<br>2.3<br>1.6||nF<br>nF<br>pF||
|**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS||800<br>3280||pF<br>pF||
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)||18<br>10<br>62<br>7||ns<br>ns<br>ns<br>ns||
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>||190<br>55<br>45||nC<br>nC<br>nC||
|**RthJC**<br> <br>**RthCS**<br>TO-247<br>TO-264||<br>0.21<br>0.15||0.14C/W<br> C/W<br> C/W||
|**Source-Drain Diode**<br>**Symbol**<br>**Test Conditions                                               Characteristic Values**||||||
|(TJ= 25C, Unless Otherwise Specified)**Min.**|||**Typ.**||**Max**|
|**IS**<br>VGS= 0V|||||170     A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM|||||680     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|||||1.4     V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 85A, -di/dt = 100A/μs<br>VR= 100V|||140<br>770<br>11||ns<br>nC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>180<br>VGS = 10V<br>160           8V<br>140 7V<br>120<br>100<br>6V<br>80<br>60<br>5V<br>40<br>20<br>4V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>800<br>VGS = 10V<br>700<br>9V<br>600<br>8V<br>500<br>400<br>7V<br>300<br>200<br>6V<br>100<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 85A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>180 2.8<br>VGS = 10V<br>160            8V VGS = 10V<br>2.4<br>140 7V<br>120 2.0<br>6V I  D  = 170A<br>100<br>1.6<br>80<br>I D = 85A<br>60 5V 1.2<br>40<br>0.8<br>20 4V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.0 1.3<br>3.5 VGS = 10V  1.2<br>BVDSS<br>T J  = 125 [o] C 1.1<br>3.0<br>1.0<br>2.5 0.9<br>2.0 0.8<br>0.7<br>1.5 TJ = 25 [o] C VGS(th)<br>0.6<br>1.0<br>0.5<br>BVDSS<br>0.5 0.4<br>0 100 200 300 400 500 600 700 800 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized GS(th)<br>DS(on)  / V<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved. 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

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Fig. 7. Maximum Drain Current vs. Case Temperature<br>**----- End of picture text -----**<br>


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180<br>160<br>External Lead Current Limit<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 8. Input Admittance<br>250<br>200<br>150<br>100<br>TJ = 125 [o] C<br>           25 [o] C<br>- 40 [o] C<br>50<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 9. Transconductance** 

**Fig. 10. Forward Voltage Drop of Intrinsic Diode** 

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240 600<br>T J  = - 40 [o] C<br>200 500<br>160 25 [o] C 400<br>120 125 [o] C 300<br>80 200<br>TJ = 25 [o] C<br>40 100 TJ = 125 [o] C<br>0 0<br>0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br>9  V DS = 125V<br>8  I D = 85A 10,000 C iss<br> I G = 10mA<br>7<br>6 1,000<br>5 Coss<br>4 100<br>3<br>Crss<br>2 10<br>1 f = 1 MHz<br>0 1<br>0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s  - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

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Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>24 1000<br>RDS(on) Limit<br>20 25μs<br>100<br>16 100μs<br>12 10<br>8<br>1ms<br>1<br> TJ = 150 [o] C<br>4 10ms<br> TC = 25 [o] C    100ms<br> Single Pulse  DC<br>0 0.1<br>0 40 80 120 160 200 240 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br>**----- End of picture text -----**<br>


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Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>Pulse Width - Second<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2017 IXYS CORPORATION, All Rights Reserved. 

IXYS REF: F_170N25X3 (28-S301) 4-24-17 

## **IXFT170N25X3HV   IXFH170N25X3 IXFK170N25X3** 

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TO-268HV Outline<br>**----- End of picture text -----**<br>


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    PINS:<br>          1 - Gate  2 - Source<br>          3 - Drain<br>**----- End of picture text -----**<br>


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  TO-247 Outline<br>D A<br> A2  A2 A E B  0P O 0K M  D B M+<br>Q<br>R   + S  D2   +<br> D1<br>D<br>0P1<br>dvb? 0] 4<br>1 2 3 ixys option<br> L1<br>C<br> E1<br>L<br> A1 b<br>c  b2<br> b4 e PINS:  1 - Gate<br>O  J  M  C  A M+            2, 4 - Drain<br>           3 - Source<br>**----- End of picture text -----**<br>


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  TO-264 Outline<br>Terminals:   1  = Gate<br>                      2  = Drain<br>                      3  = Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixfh170n25x3/mosfet-170a-250v-890w-to-247/dp/3930509)
---

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