# MOSFET, N-CH, 500V, 16A, TO-247

![Product image](https://novapart.co/image/farnell:3953527/)

**URL**: https://novapart.co/products/IXFH16N50P./mosfet-n-ch-500v-16a-to-247
**SKU**: IXFH16N50P.
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.3200
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Description

Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar HiPerFET Series |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 16A |
| Drain Source On State Resistance | 400mohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3953527/)

## **Polar[ TM ] HiPerFET[TM] Power MOSFET** 

**IXFA16N50P VDSS =   500V IXFP16N50P ID25 =   16A R  400m  IXFH16N50P DS(on)** 

N-Channel Enhancement Mode Avalanche Rated 

|||||**TO-263 (IXFA)**||||
|---|---|---|---|---|---|---|---|
|||||G||||
|||||S||||
|**Symbol**<br>**Test Conditions**<br>**VDSS**<br>TJ = 25C to 150C<br>**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>**VGSS**<br>Continuous<br>~~Oo~~||**Maximum Ratings**<br>500<br>500<br>30|V<br>V<br>V|**TO-220 (IXFP)**|D (Tab)<br>“>|||
|**VGSM**<br>Transient<br>40<br>V<br>**ID25**<br>TC = 25C<br>16<br>A<br>~~Sn~~||||S<br>G<br>D|D (Tab)|||
|**IDM**|TC = 25C, Pulse Width Limited by TJM|35|A|**TO-247 (IXFH)**||||
|**IA**|TC = 25C|16|A|||||
|**EAS**|TC = 25C|750|mJ|||||
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      10                   V/ns|150°C                                      10                   V/ns|150°C                                      10                   V/ns|G||||
|**PD**|TC = 25C|300|W|S<br>D|D(Tab)|||
|**TJ**<br>**TJM**||-55 ... +150<br>150|C<br>C|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain||G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain|G  = Gate           D      =  Drain<br>S  = Source       Tab   =  Drain|
|**Tstg**||-55 ... +150|C|||||
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|||||
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|**Features**||||
|**FC**|Mounting Force   (TO-263)                      10..65 / 2.2..14.6                    N/lb||Mounting Force   (TO-263)                      10..65 / 2.2..14.6                    N/lb|||||
|**Md**|Mounting Torque (TO-220 & TO-247)|1.13 / 10         Nm/lb.in||International Standard Packages|||International Standard Packages|
|**Weight**|TO-263<br>2.5|2.5|g|International Standard Packages<br>Low RDS(ON)and QG||International Standard Packages|International Standard Packages|
|TO-220|TO-220<br>3.0|3.0|g|Avalanche Rated||||
|TO-247|TO-247<br>6.0                        g|6.0                        g|6.0                        g|Low Package Inductance||||



G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

- International Standard Packages 

- Low RDS(ON) and QG 

## **Advantages** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>500|~~—~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 2.5mA<br>3.0 5.5     V|5.5     V<br>~~—~~<br>~~_~~|5.5     V|
|**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~_~~<br>~~_~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>250|15<br>250<br>~~_=~~|15A<br>250A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|400  m<br>~~|~~|400  m|



- High Power Density 

- Easy to Mount 

- Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters 

- PFC Circuits 

- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS99357H(6/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXFA16N50P     IXFP16N50P IXFH16N50P** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                     9|16|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2480<br>237<br>18|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|23<br>25<br>70<br>22|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|36<br>16<br>12|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21|0.42C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V||16       A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM||64       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 16A, -di/dt = 100A/μs<br>VR= 100V|<br>600<br>6|200      ns<br>nC<br>A|



Note  1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFA16N50P     IXFP16N50P IXFH16N50P** 

**==> picture [538 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Output Characteristics @ TJ = 125 [o] C<br>20 20<br>VGS = 10V  VGS = 10V<br>          8V<br>          8V<br>          7V<br>15 15<br>7V<br>10 10 6V<br>5 5<br>6V<br>5V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 12 14 16 18 20<br>VDS - Volts VDS - Volts<br>Fig. 3. RDS(on) Normalized to ID = 8A Value Fig. 4. RDS(on) Normalized to ID = 8A Value<br>vs. Junction Temperature vs. Drain Current<br>3.2 2.8<br>2.8 VGS = 10V 2.6 VGS = 10V<br>2.4<br>T J  = 125 [o] C<br>2.4 2.2<br>I D = 16A<br>2.0<br>2.0<br>1.8<br>1.6 I D = 8A<br>1.6<br>1.2 1.4<br>T J  = 25 [o] C<br>1.2<br>0.8<br>1.0<br>0.4 0.8<br>-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20<br>TJ - Degrees Centigrade ID - Amperes<br> - Amperes  - Amperes<br>ID ID<br> - Normalized  - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance<br>18 20<br>16 18<br>16<br>14<br>14<br>12<br>TJ = 125 [o] C<br>12<br>          25 [o] C<br>10<br>10 - 40 [o] C<br>8<br>8<br>6<br>6<br>4<br>4<br>2 2<br>0 0<br>-50 -25 0 25 50 75 100 125 150 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2<br>TJ - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXFA16N50P     IXFP16N50P IXFH16N50P** 

**==> picture [264 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance<br>28<br>T J  = - 40 [o] C<br>24<br>20<br>25 [o] C<br>16<br>12 125 [o] C<br>8<br>4<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**==> picture [264 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>70<br>60<br>50<br>40<br>30<br>20 TJ = 125 [o] C<br>TJ = 25 [o] C<br>10<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


**==> picture [538 x 428] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 9. Gate Charge Fig. 10. Capacitance<br>10 10,000<br>9  VDS = 250V<br> I D = 8A<br>8  I G = 10mA    1,000 Ciss<br>7<br>6<br>5 100 Coss<br>4<br>3<br>10 Crss<br>2<br>1 f = 1 MHz<br>0 1<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br>Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance<br>100 1<br>RDS(on) Limit<br>25μs<br>10 0.1<br>100μs<br>1ms<br> TJ = 150 [o] C<br>10ms<br> TC = 25 [o] C DC<br> Single Pulse<br>1 0.01<br>10 100 1000 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br> - Amperes  - K / W<br>ID Z(th)JC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: F_16N50P (5J) 12-22-08-G 

## **IXFA16N50P     IXFP16N50P IXFH16N50P** 

**==> picture [65 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-263 Outline<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **TO-220 Outline** 

**==> picture [30 x 19] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


## **TO-247 Outline** 

**==> picture [30 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixfh16n50p/mosfet-n-ch-500v-16a-to-247/dp/3953527)
---

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