# Power MOSFET, N Channel, 1 kV, 15 A, 1.05 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:4757901/)

**URL**: https://novapart.co/products/IXFH15N100Q3/power-mosfet-n-channel-1-kv-15-a-105-ohm-to-247
**SKU**: IXFH15N100Q3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €9.5800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Q3-Class HiperFET Series |
| Qualification | - |
| Power Dissipation | 690W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 1.05ohm |
| Gate Source Threshold Voltage Max | 6.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4757901/)

## **Q3-Class HiperFET[[TM]] Power MOSFET** 

## **IXFT15N100Q3 IXFH15N100Q3** 

**==> picture [518 x 452] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|Q3-Class|IXFT15N100Q3|VDSS|=   1000V|
|HiperFET|[[TM]]|IXFH15N100Q3|ID25|=   15A|
|Power MOSFET|R||1.05||
|DS(on)|
|D|t||250ns|
|rr|
|N-Channel Enhancement Mode|
|Avalanche Rated|G|
|TO-268|
|Fast Intrinsic Rectifier|
|S|(IXFT)|
|G|
|S|
|>|
|Symbol|Test Conditions|Maximum Ratings|D (Tab)|
|VDSS|TJ|= 25C to 150C|1000|V|
|VDGR|TJ|= 25C to 150C, RGS = 1M|1000|V|TO-247|
|(IXFH)|
|VGSS|Continuous| 30|V|
|VGSM|Transient| 40|V|
|ID25|TC|= 25C|15|A|
|IDM|TC|= 25C, Pulse Width Limited by TJM|45|A|G|D|S|D (Tab)|
|IA|TC|= 25C|7.5|A|
|EAS|TC|= 25C|1.0|J|G  = Gate           D      =  Drain|
|dv/dt|IS| IDM, VDD| VDSS, TJ| 150°C                                      50                V/ns|S  = Source       Tab   =  Drain|
|PD|TC|= 25C|690|W|
|T|-55 ... +150|C|
|J|
|TJM|150|C|Features|
|T|-55 ... +150|C|
|stg||Low Intrinsic Gate Resistance|
|TL|Maximum Lead Temperature for Soldering                    300|°C||International Standard Packages|
|TSOLD|1.6 mm (0.062in.) from Case for 10s                              260|°C||Low Package Inductance|
||Fast Intrinsic Rectifier|
|Md|Mounting Torque  (TO-247)|1.13 / 10|Nm/lb.in.||Low RDS(on) and QG|
|Weight|TO-268|4.0|g|
|TO-247|6.0|g|

**----- End of picture text -----**<br>


## **Advantages** 

- High Power Density 

- Easy to Mount  Space Savings 

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**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions                                             Characteristic Values||Space Savings|
|(TJ = 25C Unless Otherwise Specified)|Min.       Typ.      Max.|
|BVDSS|VGS|= 0V, ID = 1mA|1000|||V|Applications|
|VGS(th)|VDS|= VGS, ID = 4mA|3.5|6.5    V||||DC-DC Converters|
|IGSS|VGS|= 30V, VDS = 0V||||100  nA||Battery ChargersSwitch-Mode and Resonant-Mode|
|I|T|DSS|VDS|= VDSS, VGS =  0V|J = 125C|1.5  mA                      25    A|Power Supplies|DC Choppers|
|RDS(on)|VGS|= 10V, ID = 0.5 • ID25, Note 1|1.05||||||Temperature and Lighting Controls|

**----- End of picture text -----**<br>


DS100353A(1/20) 

© 2020 IXYS CORPORATION,  All Rights Reserved 

**IXFT15N100Q3 IXFH15N100Q3** 

|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                           Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**gfs**<br>VDS= 20V, ID= 0.5 • ID25, Note 1                 7.5|12.5|S|
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|3250<br>265<br>24|pF<br>pF<br>pF|
|**RGi**<br>Gate Input Resistance<br>|0.20||
|**td(on)**<br> <br>**tr**<br>   <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2(External)|28<br>10<br>30<br>8|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>|64<br>23<br>27|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>TO-247|<br>0.21|0.18 C/W<br>C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ. **|**Max.**|
|**IS**<br>VGS= 0V||15<br>A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||60<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 7.5A, -di/dt = 100A/s<br>VR= 100V, VGS = 0V|<br>7.6 <br>660|250     ns<br> A<br>nC|



Note      1.  Pulse test, t  300s, duty cycle, d  2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXFT15N100Q3 IXFH15N100Q3** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

**Fig. 2. Extended Output Characteristics @ TJ = 25[o] C** 

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**----- Start of picture text -----**<br>
24<br>14 VGS = 10V  VGS = 10V<br>       9V<br>20<br>12<br>10 8V 16<br>8<br>12<br>8V<br>6<br>8<br>4<br>7V 4<br>2 7V<br>6V<br>0 0<br>0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - AmperesID  - AmperesID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125[o] C** 

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**----- Start of picture text -----**<br>
14<br>VGS = 10V<br>12<br>10<br>7V<br>8<br>6<br>4<br>6V<br>2<br>5V<br>0<br>0 3 6 9 12 15 18 21 24 27 30 33<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs.<br>Drain Current<br>2.6<br>2.4 VGS = 10V<br>TJ = 125 [o] C<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4 TJ = 25 [o] C<br>1.2<br>1.0<br>0.8<br>0 2 4 6 8 10 12 14 16 18 20 22<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs.<br>Junction Temperature<br>3.0<br>V GS = 10V<br>2.6<br>2.2 I  D  = 15A<br>1.8 I  D = 7.5A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Maximum Drain Current vs.<br>Case Temperature<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

## **IXFT15N100Q3 IXFH15N100Q3** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>18<br>16 VDS = 20V<br>14<br>12<br>10<br>8 T J = 125 [o] C  25 [o] C<br>- 40 [o] C<br>6<br>4<br>2<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15 T J = 125 [o] C<br>10 T J   = 25 [o] C<br>5<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VSD - Volts<br>Fig. 11. Capacitance<br>10000<br>Ciss<br>1000<br>Coss<br>100<br>C rss<br>f = 1 MHz<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS - Volts<br> - Amperes<br>IS<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**==> picture [261 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>25<br>TJ = - 40 [o] C<br>V DS = 20V<br>20<br>25 [o] C<br>15<br>10 125 [o] C<br>5<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [251 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br> VDS = 500V<br>14<br> I D = 7.5A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 12. Forward-Bias Safe Operating Area** 

**==> picture [252 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>1ms 100µs 25µs<br>RDS(on) Limit<br>10<br>1<br>T J = 150 [o] C<br>T C  = 25 [o] C<br>Single Pulse<br>0.1<br>10 100 1,000<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFT15N100Q3 IXFH15N100Q3** 

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**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2020 IXYS CORPORATION,  All Rights Reserved 

IXYS REF: F_15N100Q3(Q6) 6-28-11 

## **IXFT15N100Q3 IXFH15N100Q3** 

**==> picture [92 x 208] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-268 Outline —<br>_— i<br>| !<br>.<br>a oar I<br>pL iF<br>ae hl<br>ra<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


**==> picture [181 x 203] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 Outline<br>ee LEp—r—————4tf5 «SOD<br>R l| 6) lt [s] 2 (©)<br>of vl Wt<br>, -& |<br>ll<br>H ot fl eI<br>L<br>c b<br>ba 1 - Gate<br>2,4 - Drain<br>\o<br>SLI [OAD)] 3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFT15N100Q3 IXFH15N100Q3** ~~sd~~ 

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

© 2020 IXYS CORPORATION,  All Rights Reserved 



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- [View this product on Novapart](https://novapart.co/products/IXFH15N100Q3/power-mosfet-n-channel-1-kv-15-a-105-ohm-to-247)
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- [Supplier page](https://es.farnell.com/littelfuse/ixfh15n100q3/mosfet-n-ch-1kv-15a-to-247/dp/4757901)
---

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