# Power MOSFET, N Channel, 175 V, 150 A, 0.012 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3930076/)

**URL**: https://novapart.co/products/IXFH150N17T2/power-mosfet-n-channel-175-v-150-a-0012-ohm-to-247
**SKU**: IXFH150N17T2
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.3900
**Stock**: 50+
**Lead Time**: 204 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 880W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 175V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930076/)

## Advance Technical  Information 

## **TrenchT2[TM ] HiperFET[TM] Power MOSFET** 

## **IXFH150N17T2 IXFT150N17T2** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 175°C|175|V|
|**VDGR**|TJ = 25°C to 175°C, RGS= 1MΩ|175|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|150|A|
|**IDM**|TC = 25°C, Pulse Width Limited by TJM|400|A|
|**IA**|TC = 25°C|75|A|
|**EAS**|TC = 25°C|1.0|J|
|**dv/dt**|IS<br>≤IDM,  VDD ≤VDSS, TJ ≤175°C|15|V/ns|
|**PD**T|TC = 25°C|880|W|
|**TJ**||-55 ... +175|°C|
|**TJM**||175|°C|
|**Tstg**||-55 ... +175|°C|
|**TL**|Maximum Lead Temperature for Soldering|300|°C|
|**TSOLD**|Plastic Body for 10s|260|°C|
|**Md**|Mounting Torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in.|
|**Weight**|**Weight**TO-247<br>6|6|g|
|TO-268                                                                                                4                         g|TO-268                                                                                                4                         g|TO-268                                                                                                4                         g|TO-268                                                                                                4                         g|



**V =   175V DSS I =   150A D25 R ≤ 12.0m Ω DS(on) t ≤ 160ns rr** 

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TO-247 (IXFH)<br>G<br>D S D (Tab)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TO-268 (IXFT)<br>G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate D       =  Drain S  = Source Tab   =  Drain 

## **Features** 

High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low R DS(on) 

## **Advantages** 

Easy to Mount Space Savings High Power Density 

|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.        Typ.       Max.**<br>~~|~~|**Min.        Typ.       Max.**<br>~~|~~|**Min.        Typ.       Max.**|
|---|---|---|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>175<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 1mA<br>2.5<br>~~|~~<br>~~|~~|4.5<br>~~|~~<br>~~|~~|4.5<br>V|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>~~|~~|±<br>~~|~~<br>~~_~~|±200<br>nA<br>|
|**IDSS**<br>VDS =  VDSS, VGS=  0V<br>TJ= 150°C<br>1.5   mA|10<br>1.5   mA<br>~~P|:~~|10<br>μA<br>1.5   mA<br>~~P|:~~|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>9.7        12.0|9.7        12.0<br>~~P|:~~|9.7        12.0<br>mΩ<br>~~P|:~~|



## **Applications** 

; DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 

DS100229(01/10) 

© 2010 IXYS CORPORATION, All Rights Reserved 

**IXFH150N17T2 IXFT150N17T2** 

|**Symbol**<br>(TJ= 25°C|**Test Conditions**<br>Unless Otherwise Specified)|**Characteristic Values**<br>**Min.        Typ.         Max.**|**Characteristic Values**<br>**Min.        Typ.         Max.**|**Characteristic Values**<br>**Min.        Typ.         Max.**|**Characteristic Values**<br>**Min.        Typ.         Max.**|**Characteristic Values**<br>**Min.        Typ.         Max.**|**TO-247**|**TO-247**|**TO-247**|**TO-247**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**|**(IXFH) Outline**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfs**|VDS = 10V, ID= 60A, Note 1|100||165||S|||||||||||||||||||
|**Ciss**||||14.6||nF|||||||||||||||||||
|**Coss**<br>**Crss**|VGS = 0V, VDS= 25V, f = 1MHz|<br>|<br>|1100<br>136||pF<br>pF||||||||**1**|||**2       3**||∅P||||||
|**td(on)**|**Resistive Switching Times**|||32||ns|||||||||||||||||||
|**tr**<br>**td(off)**<br>**tf**|<br> <br> <br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 •<br>RG= 1Ω(External)|<br> <br> <br>ID25|<br> <br>|16<br>50<br>20|<br> <br>|ns<br>ns<br>ns|Terminals:||||||||~~e~~<br> 1 - Gate||||2 - Drain||||||
|**Qg(on)**||||233||nC|||||||||3 - Source||||||||||
|**Qgs**|VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>|||67||nC||Dim.||||Millimeter<br>Min.<br>Max.|||||||Inches<br>Min.<br>Max.||||||
|**Qgd**<br>**RthJC**||||63<br>|0.17|nC<br> °C/W|||A<br>A1<br>A2||||4.7<br>2.2<br>2.2||||5.3<br>2.54<br>2.6||.185<br>.087<br>.059|||.209<br>.102<br>.098|||
|**RthCS**|TO-247<br>|||0.21||°C/W|||b<br>b1|||1.0<br>1.65|||||1.4<br>2.13||.040<br>.065|||.055<br>.084|||
||||||||||b~~2~~|||2.87|||||3.12||.113|||.123|||
||||||||||C||||||.4||.8||.016|||.031|||
||||||||||D|||20.80|||||21.46||.819|||.845|||
|**Source-Drain Diode**|||||||||E|||15.75|||||16.26||.610|||.640|||
||||||||||e|||5.20|||||5.72||0.205 0.225||||||
||||||||||L|||19.81|||||20.32||.780|||.800|||
|**Symbol**|**Test Conditions**|**Characteristic Values**|||||||L1||||||||4.50|||||.177|||
|(TJ= 25°C|Unless Otherwise Specified)|**Min.**||**Typ. **|**Max.**||||∅P|||3.55|||||3.65||.140|||.144|||
||||||||||Q|||5.89|||||6.40||0.232 0.252||||||
|**IS**|VGS= 0V||||150|A|||R|||4.32|||||5.49||.170|||.216|||
||||||||||S|||6.15|||||BSC||242 BSC||||||



|**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|||||||L1|L1|||||||||4.50|4.50|4.50|4.50|||||||.177|.177|.177|.177|.177|.177|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)||**Min.**|**Typ. **|**Max.**|||||||∅P|||||3.55|||||3.65||||||.140||||.144||||||||||
||||||||||||Q|||||5.89|||||6.40|||||0.232||||0.252|||||||||||
|**IS**|VGS= 0V|||150|A||||||R|||||4.32|||||5.49||||||.170||||.216||||||||||
||||||||||||S|||||6.15|||||BSC||||||242|||BSC|||||||||||
|**ISM**|Repetitive, Pulse Width Limited by TJM|||600|A||||||||||||||||||||||||||||||||||||
|**VSD**|IF= 100A, VGS= 0V, Note 1|||1.3|V||**TO-268**||||||**(IXFT)**||||||||**Outline**||||||||||||||||||||
|**trr**<br>**IRM**<br>**QRM**|IF= 75A, -di/dt = 100A/μs<br>VR= 75V, VGS = 0V|<br> <br>|<br>7.80<br>0.34|160<br> <br>|ns<br>A<br>  μC||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||
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||||||||||||||||||||||||||||||||||||||||||
|Note   1.|Pulse test, t≤300μs, duty cycle, d≤2%.||||||||||||||||||||||||||||||||||||||||



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Terminals: 1 - Gate 2 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


**ADVANCE TECHNICAL INFORMATION** The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.<br>IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2<br>by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2<br>4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537<br>**----- End of picture text -----**<br>


**IXFH150N17T2 IXFT150N17T2** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

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160<br>VGS = 10V<br>140         8V<br>        7V<br>120<br>6V<br>100<br>80<br>60<br>40<br>5V<br>20<br>4V<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 150ºC** 

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160<br>V GS = 10V<br>         7V<br>140<br>6V<br>120<br>100<br>80<br>5V<br>60<br>40<br>20<br>4V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 75A Value<br> vs. Drain Current<br>4.0<br> V GS = 10V<br>3.5 TJ = 175ºC<br>3.0<br>2.5<br>2.0<br>1.5 TJ = 25ºC<br>1.0<br>0.5<br>0 50 100 150 200 250 300<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 2. Extended Output Characteristics @ TJ = 25ºC** 

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350<br>VGS = 10V<br>          8V<br>300<br>250 7V<br>200<br>6V<br>150<br>100<br>50<br>5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature** 

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3.4<br>VGS = 10V<br>3.0<br>2.6<br>I D = 150A<br>2.2<br>1.8 ID = 75A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150 175<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Fig. 6. Drain Current vs. Case Temperature<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

**IXFH150N17T2 IXFT150N17T2** 

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Fig. 7. Input Admittance Fig. 8. Transconductance<br>200 300<br>180 TJ = - 40ºC<br>250<br>160<br>140 TJ = 150ºC 25ºC<br>          25ºC  200<br>- 40ºC<br>120<br>100 150 150ºC<br>80<br>100<br>60<br>40<br>50<br>20<br>0 0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 100 120 140 160 180 200 220<br>VGS - Volts ID - Amperes<br>Fig. 9. Forward Voltage Drop of<br>Intrinsic Diode Fig. 10. Gate Charge<br>300 10<br>9  VDSDS = 85V<br>250  I D = 75A D = 75A = 75A<br>8  I  G  = 10mA<br>7<br>200<br>6<br>150 5<br>TJJ = 150ºC  4<br>100<br>TJJ = 25ºC  3<br>2<br>50<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 220 240<br>VSD - VoltsSD - Volts - Volts QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br> - Siemens<br> - AmperesID gf s<br> - Volts<br> - AmperesISS VGSGS<br>**----- End of picture text -----**<br>


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300<br>9  VDSDS = 85V<br> I D = 75A D = 75A = 75A<br>250<br>8  I  G  = 10mA<br>7<br>200<br>6<br>150 5<br>TJJ = 150ºC  4<br>100<br>TJJ = 25ºC  3<br>2<br>50<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 220 240<br>VSD - VoltsSD - Volts - Volts QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100 1,000<br>f = 1 MHz  RDS(on) Limit<br>C iss 25µs<br>100<br>10 100µs<br>10<br>Coss 1ms<br>1<br>1 TJ = 175ºC 10ms<br>DC<br>T C  = 25ºC<br>Crss Single Pulse<br>0.1 0<br>0 5 10 15 20 25 30 35 40 1 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Volts<br>IS - AmperesISS VGSGS<br> - Amperes<br>ID<br>Capacitance - NanoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFH150N17T2 IXFT150N17T2** 

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**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time<br>vs. Junction Temperature<br>24<br>23  R G = 1Ω ,  V GS = 10V<br> VDS = 85V<br>22<br>21<br>I D = 150A<br>20<br>19<br>18 I D = 75A<br>17<br>16<br>15<br>14<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


**Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** 

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500 80<br>450  t r td(on) - - - -  75<br>400  TJ = 125ºC,  VGS = 10V 70<br> VDS = 85V<br>350 65<br>I D = 150A<br>300 60<br>250 55<br>I D = 75A<br>200 50<br>150 45<br>100 40<br>50 35<br>0 30<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times<br>vs. Drain Current<br>22 75<br> t f td(off) - - - -<br>21 70<br> RG = 1Ω, VGS = 10V<br> VDS = 85V<br>20 65<br>19 60<br>18 T J  = 25ºC, 125ºC 55<br>17 50<br>16 45<br>15 40<br>30 40 50 60 70 80 90 100 110 120 130 140 150<br>ID - Amperes<br> - Nanosecondsr  d(on)t<br>t<br> - Nanoseconds<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


## **Fig. 14. Resistive Turn-on Rise Time vs. Drain Current** 

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24<br>23  R G = 1Ω ,  V GS = 10V<br> VDS = 85V<br>22<br>TJ = 125ºC<br>21<br>20<br>19<br>18<br>17<br>16 T J = 25ºC<br>15<br>14<br>30 40 50 60 70 80 90 100 110 120 130 140 150<br>ID - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


**Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature** 

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38 75<br>34  t f t d(off) - - - - 70<br> RG = 1Ω,  VGS = 10V<br>30  VDS = 85V        65<br>26 60<br>I D = 150A, 75A<br>22 55<br>18 50<br>14 45<br>10 40<br>6 35<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsf  d(off)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance** 

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600 300<br> t f t d(off) - - - -<br>500  TJ = 125ºC,  VGS = 10V 250<br> V DS = 85V<br>400 200<br>300 150<br>I D = 150A<br>200 100<br>I D = 75A<br>100 50<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2010 IXYS CORPORATION, All Rights Reserved 

**IXFH150N17T2 IXFT150N17T2** 

## **Fig. 19. Maximum Transient Thermal Impedance** 

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**----- Start of picture text -----**<br>
1.000<br>0.100<br>0.010<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - ºC  / W<br> (th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF:F_150N17T2(7V)1-14-10 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

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- [Supplier page](https://es.farnell.com/littelfuse/ixfh150n17t2/mosfet-150a-175v-880w-to-247-3/dp/3930076)
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