# Power MOSFET, N Channel, 1 kV, 12 A, 1.05 ohm, TO-247AD, Through Hole

![Product image](https://novapart.co/image/farnell:1428804/)

**URL**: https://novapart.co/products/IXFH12N100F/power-mosfet-n-channel-1-kv-12-a-105-ohm-to-247ad
**SKU**: IXFH12N100F
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €8.1300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 300W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 300W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 1.05ohm |
| Transistor Case Style | TO-247AD |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 1.05ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1428804/)

## **HiPerRF[TM]** 

## **Power MOSFETs** 

**F-Class: MegaHertz Switching** 

N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g Intrinsic Rg, High dV/dt, Low trr 

## **IXFH12N100F IXFT12N100F** 

**V =    1000V DSS I =    12A D25 R ≤ 1.05 Ω DS(on) t ≤ 250ns** rr 

## **TO-247 (IXFH)** 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25°C to 150°C|1000|V|
|**VDGR**|TJ = 25°C to 150°C, RGS= 1MΩ|1000|V|
|**VGSS**|Continuous|±20|V|
|**VGSM**|Transient|±30|V|
|**ID25**|TC = 25°C|12|A|
|**IDM**<br>TC = 25°C, pulse width limited by TJM<br>48<br>A<br>~~ee~~||||
|**IAR**|TC = 25°C|12|A|
|**EAS**|TC = 25°C|1                      J|1                      J|
|**dV/dt**|IS<br>≤IDM,  di/dt<br>< 100A/μs, VDD ≤VDSS|DSS20               V/ns|20               V/ns|
|T|TJ ≤150°C, RG= 2Ω|||
|**PD**|TC = 25°C|300|W|
|**TJ**||-55 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**||-55 ... +150|°C|
|**TL**|Maximum lead temperature for soldering|300|°C|
|**TSOLD**|Plastic body for 10s|260|°C|
|**Md**|Mounting torque (TO-247)<br>1.13/10|1.13/10|Nm/lb.in.|
|**Weight**|TO-247|6|g|
||TO-268<br>4                        g|4                        g|4                        g|



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## **TO-268 (IXFT)** 

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G<br>S<br>TAB<br>**----- End of picture text -----**<br>


G =  Gate D      = Drain S =  Source TAB  = Drain 

## **Features** 

RF capable MOSFETs Double metal process for low gate resistance 

Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated 

Low package inductance - easy to drive and to protect Fast intrinsic rectifier 

## **Applications** 

DC-DC converters 

|**Symbol**<br>(T= 25°C, unless otherwise specified)<br>**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|
|---|---|---|
|(TJ= 25°C, unless otherwise specified)<br>**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|**Min.       Typ.     Max.**|
|**BVDSS**<br>VGS = 0V, ID= 1mA<br>1000|~~,~~|V<br>~~,~~|
|**VGS(th)**<br>VDS = VGS, ID= 4mA<br>3.0<br>5.5|5.5<br>~~,~~<br>~~a~~|5.5<br>V<br>~~,~~<br>~~a~~|
|**IGSS**<br>VGS =±20V, VDS= 0V<br>±|±<br>~~a~~<br>~~|~~|±100<br>nA<br>~~a~~<br>~~|~~|
|**IDSS**<br>VDS =  VDSS<br>50<br>VGS =  0V<br>TJ= 125°C<br>1.5   mA|50<br>1.5   mA<br>~~|~~|50<br>μA<br>1.5   mA<br>~~|~~|
|**RDS(on)**<br>VGS = 10V, ID= 0.5 • ID25,  Note 1<br>1.05|1.05|1.05<br>Ω|



Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers 

## **Advantages** 

Space savings High power density 

DS98856A(01/03) 

© 2003 IXYS CORPORATION, All Rights Reserved 

## **IXFH12N100F IXFT12N100F** 

|<br>|<br>|<br>|<br>|
|---|---|---|---|
|**Symbol**<br>**Test Conditions**<br>**Characteristic Values**<br>||||
|(TJ= 25°C unless otherwise specified)**Min.**||**Typ.**|**Max.**|
|**gfs**<br>VDS = 10V, ID= 0.5 • ID25, Note 1<br>8<br><br>||12<br>|S<br>|
|**Ciss**<br>**Coss**<br>**C**|<br>VGS = 0V, VDS= 25V, f = 1MHz<br> <br>|2700<br>305<br>93|pF<br>pF<br>pF|
|**rss**<br>**td(on)**<br> <br>**tr**<br>  <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 2Ω(External)||12<br>9.8<br>31<br>12|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS = 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br> <br>**Qgd**<br>||77<br>16<br>42|nC<br>nC<br>nC|
|**RthJC**<br>**RthCS**<br>(TO-247)<br>||<br>0.21|0.42 °C/W<br>°C/W|



|**Source-Drain Diode**<br>**Characteristic Values**<br>|**Source-Drain Diode**<br>**Characteristic Values**<br>|**Source-Drain Diode**<br>**Characteristic Values**<br>|
|---|---|---|
|TJ= 25°C unless otherwise specified)**Min.**|**Typ.**|**Max.**|
|**IS**<br>VGS= 0V||12<br>A|
|**ISM**<br>Repetitive,  pulse width limited by TJM||48<br>A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.5<br>V|
|**trr**<br> <br>**QRM**<br>0.8<br>**IRM**<br>7.0<br>IF= 12A, -di/dt = 100A/μs<br>VR= 100V, VGS = 0V||250 ns<br>μC<br>A|



Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 

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**TO-247 (IXFH) Outline** 

|**IXFH12N100F**<br>**IXFT12N100F**||
|---|---|
|Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098<br>b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123<br>C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640<br>e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br><br><br><br>e<br>∅P<br>**TO-247 (IXFH) Outline**||
|||
|L1<br>4.50<br>.177<br>∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252<br>R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15     BSC<br>242    BSC||



## **TO-268 Outline** 

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 



## Links

- [View this product on Novapart](https://novapart.co/products/IXFH12N100F/power-mosfet-n-channel-1-kv-12-a-105-ohm-to-247ad)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixfh12n100f/transistor-mosfet-through-hole/dp/1428804)
---

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