# Power MOSFET, N Channel, 1 kV, 7 A, 1.9 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:3438371/)

**URL**: https://novapart.co/products/IXFA7N100P/power-mosfet-n-channel-1-kv-7-a-19-ohm-to-263
**SKU**: IXFA7N100P
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.6300
**Stock**: 100+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | Polar HiPerFET |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 1kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 1.9ohm |
| Gate Source Threshold Voltage Max | 6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3438371/)

## **Polar[ TM ] HiPerFET[TM] Power MOSFET** 

## **IXFA7N100P IXFP7N100P IXFH7N100P** 

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 

|**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**|
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|1000|V|
|**VDGR**<br>TJ = 25C to 150C, RGS= 1M<br>1000<br>V<br>~~a~~||||
|**VGSS**|Continuous|30|V|
|**VGSM**|Transient|40|V|
|**ID25**<br>**IDM**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|7<br>18|A<br>A|
|**IA**|TC = 25C|7|A|
|**EAS**|TC = 25C|300|mJ|
|**dv/dt**<br>**PD**|IS<br>IDM, VDD VDSS, TJ 150C<br>TC = 25C|10<br>300|V/ns<br>W|
|**TJ**<br>**TJM**||-55 ... +150<br>150|C<br>C|
|**Tstg**||-55 ... +150|C|
|**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>Plastic Body for 10s|300<br>260|°C<br>°C|
|**FC**<br>**Md**|Mounting Force    (TO-263)                      10..65 / 2.2..14.6<br>Mounting Torque (TO-220 & TO-247)<br>1.13 / 10||N/lb<br>Nm/lb.in|
|**Weight**|TO-263|2.5|g|
|TO-247|TO-220<br>TO-247|3.0                        g<br>6.0                        g|3.0                        g<br>6.0                        g|



**V =   1000V DSS I =   7A D25 R  1.9  DS(on)** 

**==> picture [111 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-263 (IXFA)<br>G<br>S<br>D (Tab)<br>TO-220 (IXFP)<br>G<br>D<br>S<br>D (Tab)<br>TO-247 (IXFH)<br>G<br>D<br>S D (Tab)<br>**----- End of picture text -----**<br>


G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Packages 

- Fast Intrinsic Rectifier 

- Avalanche Rated 

- Low RDS(ON) and QG 

- Low Package Inductance 

## **Advantages** 

**Symbol Test Conditions                                                Characteristic Values**  High Power Density (TJ = 25C, Unless Otherwise Specified) **Min.       Typ.         Max.**  Easy to Mount **BVDSS** VGS = 0V, ID = 250A 1000 V  Space Savings **VGS(th)** VDS = VGS, ID = 1mA 3.0 6.0      V **Applications IGSS** VGS = 30V, VDS = 0V 100   nA  Switch-Mode and Resonant-Mode **IDSS** VDS = VDSS, VGS = 0V 15   A Power Supplies TJ = 125C 1  mA  DC-DC Converters  Laser Drivers **RDS(on)** VGS = 10V, ID = 0.5 **•** ID25, Note 1 1.9       AC and DC Motor Drives  Robotics and Servo Controls 

DS99924D(11/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

**IXFA7N100P   IXFP7N100P IXFH7N100P** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|**Symbol**<br>**Test Conditions                                               Characteristic Values**<br>|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**gfs**<br>VDS= 20V, ID= 0.5**•**ID25, Note 1                       3.6|6.0|S|
|**RGi**<br>Gate Input Resistance<br>|1.8||
|**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|2590<br>158<br>26|pF<br>pF<br>pF|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 10(External)|25<br>49<br>42<br>44|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|47<br>21<br>21|nC<br>nC<br>nC|
|**RthJC**<br> <br>**RthCS**<br>TO-220<br> <br>TO-247<br>|<br>0.50<br>0.21|0.42C/W<br> C/W<br> C/W|



## **Source-Drain Diode** 

|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|**Symbol**<br>**Test Conditions                                               Characteristic Values**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**IS**<br>VGS= 0V, Note1||7       A|
|**ISM**<br>Repetitive, Pulse Width Limited by TJM||28       A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1||1.3       V|
|**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 3.5A, -di/dt = 100A/μs<br>VR= 100V|<br>0.4<br>4.0|300      ns<br>C<br>A|



Note      1.   Pulse test, t  300s, duty cycle, d 2%. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

**IXFA7N100P   IXFP7N100P IXFH7N100P** 

**Fig. 1. Output Characteristics @ TJ = 25[o] C** 

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7<br>VGS = 10V<br>6           8V<br>7V<br>5<br>4<br>3<br>2 6V<br>1<br>5V<br>0<br>0 2 4 6 8 10 12 14<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125[o] C** 

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**----- Start of picture text -----**<br>
7<br>V GS = 10V<br>6           8V<br>7V<br>5<br>4<br>3 6V<br>2<br>1 5V<br>0<br>0 3 6 9 12 15 18 21 24 27<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs.<br> Drain Current<br>2.6<br>2.4 V GS = 10V<br>T J  = 125 [o] C<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>TJ = 25 [o] C<br>1.0<br>0.8<br>0 2 4 6 8 10 12 14<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>14<br>V GS = 10V<br>12<br>10 8V<br>8<br>7V<br>6<br>4<br>2 6V<br>0<br>0 5 10 15 20 25 30 35<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


**Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
3.0<br>2.6 VGS = 10V<br>2.2 I  D  = 7A<br>1.8<br>I D = 3.5A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Fig. 6. Maximum Drain Current vs. Case Temperature** 

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**----- Start of picture text -----**<br>
8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

**IXFA7N100P   IXFP7N100P IXFH7N100P** 

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**----- Start of picture text -----**<br>
Fig. 7. Input Admittance<br>14<br>12<br>10 TJ = 125 [o] C<br>          25 [o] C<br>8         - 40 [o] C<br>6<br>4<br>2<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 9. Forward Voltage Drop of Intrinsic Diode<br>30<br>25<br>20<br>15<br>10<br>TJ = 125 [o] C<br>5 TJ = 25 [o] C<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD - Volts<br> - Amperes<br>IS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Transconductance<br>14<br>TJ = - 40 [o] C<br>12<br>10 25 [o] C<br>8 125 [o] C<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16<br>ID - Amperes<br> - Siemens<br>f s<br>g<br>**----- End of picture text -----**<br>


**Fig. 10. Gate Charge** 

**==> picture [248 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br> VDS = 500V<br>14<br> I D = 3.5A<br>12  I  G  = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70<br>QG - NanoCoulombs<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br>


**Fig. 14. Forward-Bias Safe Operating Area** 

**Fig. 11. Capacitance** 

**==> picture [535 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>10,000<br>Ciss<br>RDS(on) Limit<br>10<br>25μs<br>1,000<br>100μs<br>1ms<br>1<br>C oss<br>100<br>0.1<br>Crss  TJ = 150 [o] C 10ms<br>100ms<br> TC = 25 [o] C<br>f = 1 MHz   Single Pulse  DC<br>10 0.01<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXFA7N100P   IXFP7N100P IXFH7N100P** 

**==> picture [538 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K  / W<br> (th )JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_7N100P(56) 5-28-14-A 

**IXFA7N100P   IXFP7N100P IXFH7N100P** 

**==> picture [65 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-263 Outline<br>f—8,<br>4<br>| 9<br>of rie<br>ae<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


**==> picture [155 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220 Outline<br>: ,<br>[p30 RAL<br>a T<br>Ile.12.3 7M |<br>on |<br>ul<br>L<br>oa pon ee oe]<br>owe<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>ta<br>TO-247 Outline<br>= - pe<br>— FS |<br>rn<br>il Wy<br>[+f Off |<br>V2 sans oom<br>T<br>H 7<br>bt 1 - Gate2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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