# Power MOSFET, N Channel, 300 V, 72 A, 0.019 ohm, TO-263, Surface Mount

![Product image](https://novapart.co/image/farnell:3930054/)

**URL**: https://novapart.co/products/IXFA72N30X3/power-mosfet-n-channel-300-v-72-a-0019-ohm-to-263
**SKU**: IXFA72N30X3
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.5500
**Stock**: 10+
**Lead Time**: 197 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 390W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 |
| Drain Source Voltage Vds | 300V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 72A |
| Drain Source On State Resistance | 0.019ohm |
| Gate Source Threshold Voltage Max | 4.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930054/)

## Preliminary Technical Information 

## **X3-Class HiPerFET[TM] Power MOSFET** 

## **IXFA72N30X3** 

**V =   300V DSS I =   72A D25 R  19m  DS(on)** 

N-Channel Enhancement Mode Avalance Rated 

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**----- Start of picture text -----**<br>
TO-263<br>**----- End of picture text -----**<br>


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G<br>S<br>D (Tab)<br>**----- End of picture text -----**<br>


|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VDSS**|TJ = 25C to 150C|300|V|
|**VDGR**|TJ = 25C to 150C, RGS= 1M|300|V|
|**VGSS**|Continuous|20|V|
|**VGSM**|Transient|30|V|
|**ID25**|TC = 25C|72|A|
|**IDM**|TC = 25C, Pulse Width Limited by TJM|150|A|
|**IA**|TC = 25C|36|A|
|**EAS**|TC = 25C|1|J|
|**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C                                      20                   V/ns|150°C                                      20                   V/ns|150°C                                      20                   V/ns|
|**PD**|TC = 25C|390|W|
|**TJ**||-55 ... +150|C|
|**TJM**<br>**Tstg**||150<br>-55 ... +150|C<br>C|
|**TL**|Maximum Lead Temperature for Soldering                    300|Maximum Lead Temperature for Soldering                    300|°C|
|**dT/dt**|Heating / Cooling rate,  175C - 210C                            50                 °C/min|C                            50                 °C/min|C                            50                 °C/min|
|**TSOLD**|1.6 mm (0.062in.) from Case for 10s                              260|1.6 mm (0.062in.) from Case for 10s                              260|°C|
|**FC**|Mounting Force                                        10..65 / 2.2..14.6                    N/lb||Mounting Force                                        10..65 / 2.2..14.6                    N/lb|
|**Weight**|2.5|2.5|g|



G  = Gate           D      =  Drain S  = Source       Tab   =  Drain 

## **Features** 

- International Standard Package 

- Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance 

## **Advantages** 

- High Power Density 

- Easy to Mount  Space Savings 

## **Applications** 

- Switch-Mode and Resonant-Mode 

- Power Supplies  DC-DC Converters  PFC Circuits 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**BVDSS**<br>VGS = 0V, ID= 250μA<br>300|~~|~~|V|
|**VGS(th)**<br>VDS = VGS, ID= 1.5mA<br>2.5 4.5      V|4.5      V<br>~~|~~|4.5      V|
|**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~|~~<br>~~|~~|100   nA|
|**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>750|5<br>750<br>~~|_~~|5A<br>750A|
|**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|19  m|19  m|



- AC and DC Motor Drives 

- Robotics and Servo Controls 

DS100898A(4/18) 

© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXFA72N30X3** 

|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**|**Min.       Typ.        Max**|**Min.       Typ.        Max**|
|---|---|---|---|
|(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.        Max**<br>~~||~~||**Min.       Typ.        Max**<br>~~||~~|**Min.       Typ.        Max**|
|**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1                      36            60                     S<br>~~||~~||, Note 1                      36            60                     S<br>~~||~~|, Note 1                      36            60                     S|
|**RGi**<br>Gate Input Resistance<br>1.7<br>~~||~~||1.7<br>~~||~~||
|**C**<br>5400||5400|pF|
|**Ciss**<br>**Coss**<br>**Crss**|5400<br>VGS= 0V, VDS= 25V, f = 1MHz<br>800<br>2|5400<br>800<br>2|pF<br>pF<br>pF|
|**Co(er)**<br>310<br>**Co(tr)**<br>1200                    pF<br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS<br>}||310<br>1200                    pF|pF<br>1200                    pF|
|**td(on)**<br>22<br>**tr**<br>25<br>**td(off)**<br>86<br>**tf**<br>11<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 5(External)||22<br>25<br>86<br>11|ns<br>ns<br>ns<br>ns|
|**Qg(on)**<br>82<br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br>25<br>**Qgd**<br>25<br>~~||~~||82<br>25<br>25<br>~~||~~|nC<br>nC<br>nC|
|**RthJC**<br>0.32<br>~~||~~||0.32<br>~~||~~|0.32C/W|



|**TO-263 (IXFA) Outline**|**TO-263 (IXFA) Outline**|**TO-263 (IXFA) Outline**|
|---|---|---|



1 = Gate 2 = Drain 3 = Source 4 = Drain 

## **Source-Drain Diode** 

|(TJ= 25C, Unless Otherwise Specified)**Min.       Typ.       Max**|**Min.       Typ.       Max**|**Min.       Typ.       Max**|
|---|---|---|
|**IS**<br>VGS= 0V|72     A|72     A|
|**ISM**<br>Repetitive, pulse Width Limited by TJM|288     A|288     A|
|**VSD**<br>IF= IS, VGS= 0V, Note 1|1.4     V|1.4     V|
|**trr**<br>100<br>**QRM**<br>750<br>**IRM**<br>15<br>IF= 36A, -di/dt = 100A/μs<br>VR= 100V|100<br>750<br>15|ns<br>nC<br>A|



Note: 1. Pulse test, t  300s, duty cycle, d  2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 

## **IXFA72N30X3** 

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Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>80<br>VGS = 10V<br>70            9V<br>          8V<br>7V<br>60<br>50<br>40 6V<br>30<br>20<br>10 5V<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>**----- End of picture text -----**<br>


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300<br>VGS = 10V<br>250 9V<br>8V<br>200<br>150<br>7V<br>100<br>6V<br>50<br>5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br>


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Fig. 4. RDS(on) Normalized to ID = 36A Value vs.<br>Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>Junction Temperature<br>80 3.0<br>VGS = 10V<br>70             8V 2.6 VGS = 10V<br>60 7V<br>2.2<br>50 I  D  = 72A<br>1.8<br>40 6V I D = 36A<br>1.4<br>30<br>1.0<br>20 5V<br>10 0.6<br>4V<br>0 0.2<br>0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150<br>VDS - Volts TJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to ID = 36A Value vs. Fig. 6. Normalized Breakdown & Threshold Voltages<br> Drain Current vs. Junction Temperature<br>4.5 1.3<br>VGS = 10V<br>4.0 1.2<br>3.5 1.1 BVDSS<br>TJ = 125 [o] C<br>3.0 1.0<br>2.5 0.9<br>2.0 0.8<br>TJ = 25 [o] C V GS(th)<br>1.5 0.7<br>1.0 0.6<br>0.5 0.5<br>0 50 100 150 200 250 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>ID - Amperes TJ - Degrees Centigrade<br> - Normalized<br> - Amperes<br>ID<br>DS(on)<br>R<br> - Normalized<br> - Normalized<br>GS(th)<br> / V<br>DS(on)<br>R DSS<br>BV<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

## **IXFA72N30X3** 

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Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance<br>80 120<br>70 VDS = 10V<br>100<br>60<br>80<br>50<br>40 60<br>30 TJ = 125 [o] C<br>40          25 [o] C<br>20 - 40 [o] C<br>20<br>10<br>0 0<br>-50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0<br>TC - Degrees Centigrade VGS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


**Fig. 10. Forward Voltage Drop of Intrinsic Diode** 

## **Fig. 9. Transconductance** 

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250<br>200<br>150<br>100<br>TJJ = 125 [[o]] C<br>50<br>TJ  = 25J  = 25  = 25 [[o]] C<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4<br>VSD - VoltsSD - Volts - Volts<br> - Amperes<br>ISS<br>**----- End of picture text -----**<br>


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140 250<br>T J = - 40 [o] C<br>120 VDS = 10V<br>200<br>100<br>25 [o] C<br>150<br>80<br>125 [o] C<br>60<br>100<br>40 TJJ = 125 [[o]] C<br>50<br>20 TJ  = 25J  = 25  = 25 [[o]] C<br>0 0<br>0 20 40 60 80 100 120 140 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4<br>ID - Amperes VSD - VoltsSD - Volts - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 100,000<br> VDS = 150V<br>8  I D = 36A 10,000<br> I G = 10mA    Ciss<br>6 1,000<br>C oss<br>4 100<br>C rss<br>2 10<br>f = 1 MHz<br>0 1<br>0 10 20 30 40 50 60 70 80 90 1 10 100 1000<br>QG - NanoCoulombs VDS - Volts<br> - Siemens  - Amperes<br>f s ISS<br>g<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXFA72N30X3** 

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**----- Start of picture text -----**<br>
Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>14 1000<br>RDS(on) Limit<br>12<br>100 25μs<br>10<br>10<br>8<br>100μs<br>6<br>1<br>4 1ms<br>0.1  TJ = 150 [o] C 10ms<br>2  TC = 25 [o] C    DC<br> Single Pulse<br>0 0.01<br>0 50 100 150 200 250 300 1 10 100 1,000<br>VDS - Volts VDS - Volts<br>Fig. 15. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - MicroJoules  - Amperes<br>ID<br>OSS<br>E<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


© 2018 IXYS CORPORATION, All Rights Reserved 

IXYS REF: F_72N30X3(25-S301) 7-18-17 

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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