# IGBT, 90 A, 2.4 V, 380 W, 4 kV, ISOPLUS i5-PAK, 3 Pins

![Product image](https://novapart.co/image/farnell:3930508/)

**URL**: https://novapart.co/products/IXEL40N400/igbt-90-a-24-v-380-w-4-kv-isoplus-i5-pak-3-pins
**SKU**: IXEL40N400
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €95.6000
**Stock**: 100+
**Lead Time**: 267 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 380W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | ISOPLUS i5-PAK |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 90A |
| Collector Emitter Voltage Max | 4kV |
| Collector Emitter Saturation Voltage | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930508/)

## **Very High Voltage IGBT** 

## **( Electrically Isolated Tab)** 

## **IXEL40N400** 

**V =   4000V** CES **I =    40A** C110 **V ≤ 3.2V** CE(sat) **t =    425ns** fi(typ) 

## **ISOPLUS i5-Pak[TM]** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|
|---|---|---|---|
|**VCES**<br>TJ = 25°C to 150°C<br>4000<br>V<br>**VGES**<br>Continuous<br>±20                   V<br>~~cc~~||||
|**VGEM**|Transient|±30                   V|±30                   V|
|**IC25**|TC = 25°C                                                                         90|= 25°C                                                                         90|A|
|**IC110**|TC = 110°C|40|A|
|**ICM**|Pulse Width Limited by TJM, 1ms, VGE= 25V|400|A|
|**PC**|TC = 25°C|380|W|
|**TJ**||- 40 ... +150|°C|
|**TJM**||150|°C|
|**Tstg**<br>**TL**<br>**TSOLD**|Maximum Lead Temperature for Soldering<br>1.6 mm (0.062 in.) from Case for 10s|- 40 ... +150<br>300<br>260|°C<br>°C<br>°C|
|**VISOL**|I**ISOL**< 1mA, 50/60 Hz, t = 1 minute|4000|V~|
|**FC**<br>**Weight**|Mounting Force                                              30..170 / 7..36|Mounting Force                                              30..170 / 7..36<br>8|Nm/lb-in.<br>g|



**==> picture [124 x 64] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>E<br>C   Isolated Tab<br>G  =  Gate C = Collector<br>E  =  Emitter<br>**----- End of picture text -----**<br>


## **Features** 

Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation UL Recognized Package High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification 

## **Advantages** 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|**Min.       Typ.         Max.**|
|**VGE(th)**<br>IC<br>= 10mA, VCE= VGE<br>5.5|7.0|7.0<br>V|
|**ICES**<br>VCE =  VCES, VGE= 0V<br>Note 2, TJ= 125°C                       1.5                  mA|100<br>= 125°C                       1.5                  mA|100<br>μA<br>= 125°C                       1.5                  mA|
|**IGES**<br>VCE = 0V, VGE= ±20V|±500|±500<br>nA|
|**VCE(sat)**<br>IC<br>= IC**110**, VGE= 15V, Note 1<br>TJ= 125°C                        3.0|2.4         3.2<br>= 125°C                        3.0|2.4         3.2<br>V<br>V|



High Power Density Easy to Mount 

## **Applications** 

Capacitor Discharge Pulser Circuits 

DS99385B(09/12) 

© 2012 IXYS CORPORATION, All Rights Reserved 

**IXEL40N400** 

||||||
|---|---|---|---|---|
|||||**IXEL40N400**|
|**Symbol**<br>**Test Conditions                                                Characteristic Values**<br>(TJ= 25°C, Unless Otherwise Specified)**Min.        Typ.         Max.**<br>**g**<br>I= I, V= 10V, Note 1<br>14              24<br>S|||S<br>A<br>pF<br>pF<br>pF<br>Ω<br>nC<br>nC<br>nC||
|**gfs**<br>IC= IC110, VCE= 10V, Note 1<br>14              24<br>**ISC**<br>IC= IC110, VCC= 3400V, VCM< 4000V<br>200<br>VGE= 15V, tSC<br>< 10μs|14              24<br>200|S<br>A|||
|**Cies**<br>6040<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz<br>278<br>**Cres**<br>120<br><br>||6040<br>278<br>120<br><br>~~7~~|pF<br>pF<br>pF<br>Ω|||
|**RGint**<br>5.2<br>||5.2<br>~~7~~|5.2Ω|||
|**Qg(on)**<br>275<br>**Qge**<br>IC= IC110, VGE= 15V, VCE= 1000 V<br>63<br>**Qgc**<br>134<br>||275<br>63<br>134<br>~~7~~||||
|**td(on)**<br>160<br>**tri**<br>100<br>**Eon**<br>55<br>**td(off)**<br>630<br>**tfi**<br>425<br>**Eoff**<br>165<br>**Inductive load, TJ = 25°C**<br>IC= IC110, VGE= 15V<br>VCE= 2800V, RG= 33Ω<br>Note 3<br>|<br>~~:~~<br>,|160<br>100<br>55<br>630<br>425<br>165<br>~~7~~<br>~~pf~~||||
|**td(on)**<br>155<br>**tri**<br>105<br>**Eon**<br>85<br>**td(off)**<br>715<br>**tfi**<br>455<br>**Eoff**<br>205<br>**Inductive load, TJ = 125°C**<br>IC= IC110, VGE= 15V<br>VCE= 2800V, RG= 33Ω<br>Note 3<br>~~:~~<br>,|155<br>105<br>85<br>715<br>455<br>205<br>~~pf~~<br>~~i:~~<br>~~—_~~||||
|**RthJC**<br>**RthCK**<br>(Pressure Mount)<br>0.15         °C/W|0.26 °C/W<br>0.15         °C/W<br>~~i:~~<br>~~—_~~||||



Notes: 

1.  Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 

2.  Part must be heatsunk for high-temp ICES measurement. 

3.  Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXEL40N400** 

**==> picture [538 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>80 300<br>VGE = 25V VGE = 25V<br>70           21V           21V<br>         19V 250          19V<br>         17V 13V 17V<br>60          15V<br>200<br>50 15V<br>40 11V 150<br>30 13V<br>100<br>20<br>11V<br>9V 50<br>10<br>9V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature<br>80 2.0<br>VGE = 25V VGE = 15V<br>70           21V 1.8<br>         19V 13V<br>60          17V 1.6 I C = 80A<br>         15V<br>50 1.4<br>11V<br>40 1.2 I C = 40A<br>30 1.0<br>9V<br>20 0.8<br>I  C  = 20A<br>10 0.6<br>7V<br>0 0.4<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150<br>VCE - Volts TJ - Degrees Centigrade<br>Fig. 5. Collector-to-Emitter Voltage vs.<br>Fig. 6. Input Admittance<br> Gate-to-Emitter Voltage<br>6.0 200<br>5.5 T J   = 25ºC  180<br>5.0 160<br>4.5 140<br>4.0 120<br>3.5 100<br>I  C = 80A<br>3.0 80 T J   = - 40ºC<br>           25ºC<br>2.5 40A  60          125ºC<br>2.0 40<br>1.5 20A  20<br>1.0 0<br>9 11 13 15 17 19 21 23 25 5 6 7 8 9 10 11 12 13 14 15 16<br>VGE - Volts VGE - Volts<br> - Amperes Amperes<br>IC IC -<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br> - VoltsCE Amperes<br>V  -<br>IC<br>**----- End of picture text -----**<br>


© 2012 IXYS CORPORATION, All Rights Reserved 

**IXEL40N400** 

**==> picture [536 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>45 16<br>40 T J = - 40ºC 14  VCE = 1000V<br> I C = 40A<br>35 12  I  G = 10mA<br>25ºC<br>30<br>10<br>125ºC<br>25<br>8<br>20<br>6<br>15<br>4<br>10<br>2<br>5<br>0 0<br>0 50 100 150 200 0 40 80 120 160 200 240 280<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area<br>100,000 180<br>f = 1 MHz<br>160<br>140<br>10,000 Cies<br>120<br>100<br>1,000<br>80<br>Coes<br>60<br>100<br>Cres 40 RT JG  = 33= 125ºCΩ<br>20 dv / dt < 10V / ns<br>10 0<br>0 5 10 15 20 25 30 35 40 500 1000 1500 2000 2500 3000 3500 4000<br>VCE - Volts VCE - Volts<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IC<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 11. Maximum Transient Thermal Impedance** 

**==> picture [521 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>Pulse Width - Seconds<br> - ºC / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXEL40N400** 

**Fig. 12. Typ. Swicthing Characteristics vs. Collector Current** 

**Fig. 13. Typ. Swicthing Characteristics vs. Gate Resistor** 

**==> picture [528 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.40 0.30<br>0.36  VCC = 2800V,  RG = 33Ω<br>0.25<br>0.32 [V] [GE] [= 15V,  T] [J] [= 125ºC ] Eoff  Eoff<br>0.28<br>0.20<br>0.24<br>0.20 0.15<br>0.16<br>0.12 E on  0.10 E on<br>0.08  V CC = 2800V,  I C = 40A<br>0.05<br>0.04 [V][GE] [=][ 15V,  T][J] [=][ 125][º][C ]<br>0.00 0.00<br>0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 250<br>IC - Amperes RG - Ohms<br> - Joule  - Joule<br>on, Eoff on, Eoff<br>E E<br>**----- End of picture text -----**<br>


© 2012 IXYS CORPORATION, All Rights Reserved 

IXYS REF: EL_40N400 9-27-12 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixel40n400/transistor-igbt-4kv-90a/dp/3930508)
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