# IGBT, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins

![Product image](https://novapart.co/image/farnell:1300075/)

**URL**: https://novapart.co/products/IXDR30N120D1/igbt-isolated-50-a-24-v-200-w-12-kv-to-247ad-3
**SKU**: IXDR30N120D1
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €4.0500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1300075/)

**IXDR 30N120 D1 IXDR 30N120** 

## **High Voltage IGBT with optional Diode ISOPLUS[TM] package** 

**V** CES **= 1200 V I** C25 **= 50 A V** CE(sat) typ **= 2.4 V** 

(Electrically Isolated Back Side) 

**==> picture [510 x 78] intentionally omitted <==**

**----- Start of picture text -----**<br>
Short Circuit SOA Capability C C ISOPLUS 247 [TM]<br>Square RBSOA G G  E153432<br>G<br>C<br>E<br>E E Isolated Backside*<br>IXDR 30N120 IXDR 30N120 D1<br>G = Gate C = Collector E = Emitter<br>**----- End of picture text -----**<br>


|**Symbol**|**Conditions**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Features**|
|---|---|---|---|---|---|---|---|
|**VCES**|TJ= 25°C to 150°C||||1200|V|•NPT IGBT technology|
|**VCGR**|TJ= 25°C to 150°C; RGE= 20 kΩ||||1200|V|- high switching speed<br>- low switching losses|
|**VGES**|Continuous||||±20|V|- square RBSOA, no latch up|
|**VGEM**|Transient||||±30|V|- high short circuit capability<br>- positive temperature coefficient for|
|**IC25**|TC= 25°C||||50|A|easy paralleling|
|**IC90**|TC= 90°C||||30|A|- MOS input, voltage controlled<br>- fast recovery epitaxial diode|
|**ICM**|TC= 90°C, tp= 1 ms||||60|A|•Epoxy meets UL 94V-0|
|**RBSOA**|VGE= ±15 V, TJ= 125°C, RG= 47Ω||I|ICM= 50||A|•Isolated and UL registered E153432|
||Clamped inductive load, L = 30 mH||VCEK< V||< VCES||**Advantages**|
|**tSC**<br>**(SCSOA)**|VGE= ±15 V, VCE= VCES, TJ= 125°C<br>RG= 47Ω, non repetitive|= 125°C|||10|µs|•DCB Isolated mounting tab<br>• Meets TO-247AD package Outline|
|**PC**|TC= 25°C<br>IGBT<br>Diode||||200<br>95|W<br>W|• Package for clip or spring mounting<br>• Space savings<br>• High power density|
|**TJ**|||-55 ... +150|-55 ... +150||°C||
|**Tstg**|||-55 ... +150|-55 ... +150||°C|**Typical Applications**|
|**VISOL**|50/60 Hz, RMS  IISOL<br>**<**1 mA||||2500|V~|• AC motor speed control<br>• DC servo and robot drives|
|**Weight**|||||6|g|• DC choppers|
||||||||• Uninteruptible power supplies (UPS)|
||||||||• Switch-mode and resonant-mode|
|**Symbol**|**Conditions**|**Characteristic Values**<br>(TJ= 25°C, unless otherwise specified)|||||power supplies|
|||**min.**|**typ.**||**max.**|||
|**V(BR)CES**<br>**VGE(th)**<br>**ICES**<br>**IGES**|VGE= 0 V<br>IC= 1 mA, VCE= VGE<br>VCE= VCES, TJ=   25°C<br>TJ= 125°C<br>VCE= 0 V, VGE= ± 20 V|1200<br>4.5|2.5<br>~~:~~||6.5<br>1.5<br>± 500|V<br>V<br>mA<br>mA<br>nA||
|**VCE(sat)**|IC= 30 A, VGE= 15 V||2.4||2.9|V||



- DC choppers • Uninteruptible power supplies (UPS) 

IXYS reserves the right to change limits, test conditions and dimensions 

© 2006 IXYS All rights reserved 

1 - 4 

**IXDR 30N120 D1 IXDR 30N120** 

## **Symbol Conditions** 

## **Characteristic Values** 

**==> picture [333 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||
|---|---|---|---|
|(TJ = 25°C, unless otherwise specified)|
|min.|typ.|max.|
|Cies|1650|pF|
|Coes|VCE = 25 V, VGE = 0 V, f = 1 MHz|250|pF|
|Cres|110|pF|
|Qg|IC = 30 A, VGE = 15 V, VCE = 0.5 VCES|120|nC|
|td(on)|100|ns|
|ttd(off)r|Inductive load, TJ = 125°C|50070|nsns|
|tf|VICCE = 30 A, V = 600 V, RGE = ±15 V,G = 47 Ω|70|ns|
|Eon|4.6|mJ|
|Eoff|3.4|mJ|
|RthJC|0.6|K/W|
|RthCH|Package with heatsink compound|0.25|K/W|

**----- End of picture text -----**<br>


## **ISOPLUS247[TM] OUTLINE** 

**==> picture [503 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Reverse Diode (FRED)|Characteristic Values|ie545850215BSC|
|(TJ = 25°C, unless otherwise specified)|
|Symbol|Conditions|min.|typ.|max.|L7Q|381559|4,386,20|0,1500,220|0,2440,172|
|R|4,32|4,85|0,170|0,191|
|VF|IF = 30 A, VGE = 0 V|2.5|2.75|V|S|13,21|13,72|0,520|0,540|
|IF = 30 A, VGE = 0 V, TJ = 125°C|2.0|V|
|IF|TC = 25°C|50|A|W|-|||0|||-|||0004|||
|TC = 90°C|27|A|The convex bow of substrate is typ. < 0.04 mm over plastic surface levelof device bottom side|
|7|This drawing will meet all dimensions requirement of JEDEC outline|U|165|203|0,065|0,080|
|TO-247 AD except screw hole and except Lmax.|
|IRM|IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V|20|A|
|trr|VGE = 0 V, TJ = 125°C|200|ns|
|trr|IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V|40|ns|
|RthJC|1.3|K/W|

**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions 

© 2006 IXYS All rights reserved 

2 - 4 

**IXDR 30N120 D1 IXDR 30N120** 

**==> picture [203 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>TJ = 25°CJ = 25°C = 25°C VGE=17VGE=17V=17V<br>ee 50AA ee 15V<br>ICC 13V<br>40<br>Saas<br>11V<br>Seen<br>30<br>| Ze<br>20<br>| | yy |<br>9V<br>10<br>|) Ae<br>anaes<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 V<br>VCECE<br>Fig. 1 Typ. output characteristics<br>**----- End of picture text -----**<br>


**==> picture [505 x 637] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 60<br>TJ = 25°CJ = 25°C = 25°C VGE=17VGE=17V=17V TJ = 125°C VGE=17V<br>ee 50AA ee 15V f A50 Lt} 15V<br>ICC 13V IC 13V<br>40 40<br>Saas tt ty |<br>11V 11V<br>30 Seen 30 eee<br>20 | Ze 20 | ee<br>9V<br>| | yy | SEEEy Zen<br>9V<br>10 10<br>|) Ae Sanya<br>0 anaes 0 |A<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V<br>VCECE VCE<br>Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics<br>60 80<br>VCE = 20V TJ = 125°C<br>50A Ty. TJ = 25°C A70 ‘TLL bl<br>60<br>I h C 40 oor, IF EE TJ = 25°C<br>50<br>30 Pt | | EY 40 TELIA<br>30<br>20 TTT PTY TEELV VEL,<br>20<br>10<br>PPT ra 10 EEA<br>0 | [ery] | | 0 eee<br>5 6 7 8 9 10 11 V 0 1 2 3 V 4<br>VGE VF<br>Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of<br>free wheeling diode<br>20 60 300<br>V VCE = 600V<br>IC    =   25A pf A | | | | ns oy<br>VGE 15 IRM trr trr<br>40 oN 200<br>|<br>10 |<br>TJ = 125°C<br>5 20 IRM IVF  =  30AR = 600V 100<br>nea<br>IXDH/..R30N120<br>0 0 I7t | fl lf 0<br>0 20 40 60 80 100 120 140 nC 0 200 400 600 800A/μs 1000<br>QG -di/dt<br>Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of<br>free wheeling diode<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions 

© 2006 IXYS All rights reserved 

3 - 4 

**IXDR 30N120 D1 IXDR 30N120** 

**==> picture [505 x 630] intentionally omitted <==**

**----- Start of picture text -----**<br>
14 140 6 600<br>mJ12 120ns mJ5 Eoff 500ns<br>t<br>. Oooo, | Ga" d(off)<br>Eon 10 SOGS000728 100 t Eoff 4 CCE ERE 400 t<br>8 SaneSE 80 va<br>642 aeerrrCCT tEd(on)ontr  ==540482800ee VVTRJCEGEG  = 125°C  = 47 = 600V = ±15VΩ 604020 321 BanetrTTTeaeennPe VVTRJCEGEG  = 125°C  = 47 = 600V = ±15VΩ 300200100<br>tf<br>0 COPECO 0 0 PLETE 0<br>0 10 20 30 40 50 A 0 10 20 30 40 50 A<br>IC IC<br>Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching<br>times versus collector current times versus collector current<br>12 240 5 1500<br>10mJ VVCE GE = 600V= ±15V td(on) ns mJ VVCE GE = 600V= ±15V td(off) ns<br>E | on 8 BE==—= ITCJ   =  25A  = 125°C a Eon tr 180 tf t Eoff 4 ITCJ   =  25A  = 125°C To4] Eoff 1200 t<br>Ae 3 aeaT 900<br>6 120<br>SSeS 2 600<br>4<br>Za a<br>60<br>1 300<br>2<br>ee es tf<br>0 0 0 0<br>0 40 80 120 160 200 Ω 240 0 40 80 120 160 200 Ω 240<br>RG RG<br>Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching<br>times versus gate resistor times versus gate resistor<br>60 10<br>K/W diode<br>50A<br>1<br>ICM  40 ZthJC IGBT<br>RG = 47Ω 0.1<br>30 TJ = 125°C<br>VCEK < VCES 0.01<br>20<br>0.001<br>10 single pulse<br>CLT TPE TEP y IXDR30N120<br>0 0.0001<br>0 200 400 600 800 1000 1200 V 0.00001 0.0001 0.001 0.01 0.1 s 1<br>VCE t<br>Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance<br> RBSOA<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, test conditions and dimensions 

© 2006 IXYS All rights reserved 

4 - 4 



## Links

- [View this product on Novapart](https://novapart.co/products/IXDR30N120D1/igbt-isolated-50-a-24-v-200-w-12-kv-to-247ad-3)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/ixys-semiconductor/ixdr30n120d1/igbt-isoplus247/dp/1300075)
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