# IGBT, 125 A, 2.4 V, 660 W, 3.6 kV, TO-247PLUS-HV, 3 Pins

![Product image](https://novapart.co/image/farnell:3930055/)

**URL**: https://novapart.co/products/IXBX50N360HV/igbt-125-a-24-v-660-w-36-kv-to-247plus-hv-3-pins
**SKU**: IXBX50N360HV
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €46.5800
**Stock**: 200+
**Lead Time**: 274 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 660W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247PLUS-HV |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 125A |
| Collector Emitter Voltage Max | 3.6kV |
| Collector Emitter Saturation Voltage | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930055/)

## Advance Technical  Information 

**BiMOSFET[TM] Monolithic Bipolar MOS Transistor High Voltage, High Frequency** 

## **IXBX50N360HV** 

**V =   3600V** CES **I =   50A** C110 **V  2.9V** CE(sat) 

|**Symbol      Test Conditions**|**Symbol      Test Conditions**|**Maximum Ratings**||**TO-247PLUS-HV**|**TO-247PLUS-HV**|**TO-247PLUS-HV**|**TO-247PLUS-HV**|**TO-247PLUS-HV**||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**VCES**|TJ= 25°C to 150°C                                                     3600|= 25°C to 150°C                                                     3600|V|||||||||||
|**VCGR**|TJ=  25°C to 150°C, RGE= 1M|3600|V|||||||||||
|**VGES**<br>**VGEM**|Continuous<br>± 20<br>Transient<br>± 30|± 20<br>± 30|V<br>V||G|E||||||||
|**IC25**|TC= 25°C|125|A|||||C<br>|Tab|||||
|**IC110**|TC= 110°C|50|A|||||||||||
|**ICM**|TC = 25°C, 1ms|420|A|G  = Gate|||||E       =  Emitter|E       =  Emitter||||
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 5|ICM=  200|A|C  = Collector|||||Tab   =  Collector|||||
|**(RBSOA)**|Clamped Inductive Load                                 0.8|Clamped Inductive Load                                 0.8•VCESV|V|||||||||||
|**TSC**V|VGE= 15V, TJ= 125°C,|||||||||||||
|**(SCSOA)**R|RG= 10, VCE= 1500V, Non-Repetitive                      10                        μs|1500V, Non-Repetitive                      10                        μs|1500V, Non-Repetitive                      10                        μs|||||||||||
|**PC**|TC= 25°C|660|W|||||||||||
|**TJ**|- 55 ... +150|- 55 ... +150<br>°C|°C|||||||||||
|**TJM**||150<br>°C|°C|**Features**||||||||||
|**Tstg**|- 55 ... +150|- 55 ... +150<br>°C|°C|High Blocking Voltage||High Blocking Voltage|High Blocking Voltage|||||||
|**TL**<br>**TSOLD**Plastic Body for 10s                                                            260                           °C|**L**Maximum Lead Temperature for Soldering                  300                        °C<br>Plastic Body for 10s                                                            260                           °C|Maximum Lead Temperature for Soldering                  300                        °C<br>Plastic Body for 10s                                                            260                           °C|Maximum Lead Temperature for Soldering                  300                        °C<br>Plastic Body for 10s                                                            260                           °C|High Voltage Package<br>Low Conduction Losses||||||||||
|**FC**Mounting Force|Mounting Force<br>20..120/4.5..27               N/lb||20..120/4.5..27               N/lb|||||||||||
|**Weight**|6                   g|6                   g|6                   g|**Advantages**||||||||||



- Easy to Mount 

- Space Savings 

- High Power Density 

|(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.        Max.**<br>~~|~~|**Min.         Typ.        Max.**<br>~~||~~|**Min.         Typ.        Max.**|
|---|---|---|
|**BVCES**<br>IC= 250μA, VGE= 0V<br>3600                                  V<br>~~|~~<br>~~|~~|3600                                  V<br>~~||~~<br>~~|~~|3600                                  V|
|**VGE(th)**<br>IC= 250μA, VCE= VGE<br>3.0<br>~~|~~<br>~~|~~|~~| |~~<br>~~|~~|5.0<br>V|
|**ICES**<br>VCE= 0.8•VCES, VGE= 0V<br>Note 2, TJ= 125°C<br>~~|~~<br>~~|~~|25   μA<br>1   mA<br>~~|=~~<br>~~|~~|25   μA<br>1   mA|
|**IGES**<br>VCE= 0V, VGE= ± 20V<br><br>~~|~~|~~=~~<br>~~|~~|±200   nA|
|**VCE(SAT)**<br>IC= 50A, VGE= 15V, Note 1<br>TJ= 125°C<br>3.0                       V<br>~~|~~|2.4          2.9       V<br>3.0                       V<br>~~|~~|2.4          2.9       V<br>3.0                       V|



## **Applications** 

- Uninterruptible Power Supplies (UPS) 

- Switch-Mode and Resonant-Mode Power Supplies 

- Capacitor Discharge Circuits 

- Laser Generators 

© 2016 IXYS CORPORATION,  All Rights Reserved 

DS100624A(02/16) 

## **IXBX50N360HV** 

|**Symbol Test Conditions**<br>|**Symbol Test Conditions**<br>|**Characteristic**|**Characteristic**|**Values**||
|---|---|---|---|---|---|
|(TJ= 25°C|Unless Otherwise Specified)<br>|**Min. **|**Typ.**|**Max.**||
|**gfs**|IC= 50A, VCE= 10V, Note 1|24|40||S|
|**Cies**|||3990||pF|
|**Coes**|VCE= 25V, VGE= 0V, f = 1MHz||195||pF|
|**Cres**|||100||pF|
|**Qg(on)**|||210||nC|
|**Qge**|IC= 50A, VGE= 15V, VCE= 1000V||27||nC|
|**Qgc**|||77||nC|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|**Resistive load, TJ = 25°C**<br>IC= 50A, VGE= 15V<br>VCE= 960V, RG= 5|<br> <br> <br>|46<br>420<br>205<br>1750||ns<br>ns<br>ns<br>ns|
|**td(on)**<br>**tr**|**Resistive load, TJ = 125°C**<br>IC= 50A, VGE= 15V|<br>|44<br>845||ns<br>ns|
|**td(off)**|VCE= 960V, RG= 5||210||ns|
|**tf**|||1670||ns|
|**RthJC**||||0.19|°C/W|
|**RthCS**|||0.15||°C/W|



## **Reverse Diode** 

|**Symbol   Test Conditions**<br>**Characteristic Values**<br>°|**Symbol   Test Conditions**<br>**Characteristic Values**<br>°|**Symbol   Test Conditions**<br>**Characteristic Values**<br>°|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max**|
|**VF**<br>IF= 50A, VGE= 0V, Note 1||3.0<br>V|
|**trr**<br> <br>**IRM** <br>**QRM**<br> <br>IF= 25A, VGE= 0V, -diF/dt = 100A/μs<br>VR= 100V, VGE= 0V|1.7<br>48 <br>40|μs<br> A<br>μC|



Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 

## **ADVANCE TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXBX50N360HV** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>100 300<br>V            21V GE = 25V V            19V GE = 25V 13V<br>80           17V           15V 250            15V<br>          13V 11V<br>          11V 9V 200<br>60<br>150 9V<br>40<br>7V 100<br>20<br>50 7V<br>5V 5V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25<br>VCE - Volts VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Fig. 3. Output Characteristics @ TJ = 125ºC<br>Junction Temperature<br>100 1.8<br>VGE = 25V<br>          19V VGE = 15V<br>80           15V           13V 1.6 I  C  = 100A<br>          11V<br>9V 1.4<br>60<br>1.2 I C = 50A<br>40<br>7V<br>1.0<br>20 I C = 25A<br>0.8<br>5V<br>0 0.6<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150<br>VCE - Volts TJ - Degrees Centigrade<br> - Amperes Amperes -<br>IC IC<br> - Normalized<br> - Amperes<br>IC<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage<br>7<br>TJ  = 25ºC<br>6<br>5<br>4<br>I C = 100A<br>3<br>50A<br>2<br>25A<br>1<br>6 7 8 9 10 11 12 13 14 15<br>VGE - Volts<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


**Fig. 6. Input Admittance** 

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160<br>140<br>120<br>100<br>80<br>60<br>TJ  = 125ºC<br>40<br>           25ºC - 40 º C<br>20<br>0<br>3 4 5 6 7 8 9 10<br>VGE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION,  All Rights Reserved 

## **IXBX50N360HV** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance<br>70<br>60 TJ = - 40ºC<br>50<br>25ºC<br>40<br>125ºC<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180<br>IC - Amperes<br>Siemens<br> -<br> f s<br>g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Gate Charge<br>16<br>14  VCE = 1000V<br> I C = 50A<br>12  I G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>QG - NanoCoulombs<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br>


**Fig. 10. Capacitance** 

**Fig. 9. Forward Voltage Drop of Intrinsic Diode** 

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**----- Start of picture text -----**<br>
300 10,000<br>TJ  = 25ºC JJ  = 25ºC JJ  = 25ºC J<br>250        125ºC<br>Cies<br>200 1,000<br>150 Coes<br>100 100<br>VGEGE = 0V  Cres<br>50 V GE = 15V  15V<br>f = 1 MHz<br>0 10<br>0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 40<br>VF - VoltsF - Volts - Volts VCE - Volts<br>Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance<br>240 1<br>200<br>160 0.1<br>120<br>80 0.01<br>T J = 125ºC<br>40 RG = 5Ω<br>dv / dt < 10V / ns<br>0 0.001<br>200 600 1000 1400 1800 2200 2600 3000 3400 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VCE - Volts Pulse Width - Seconds<br> - Amperes<br>IFF<br>Capacitance - PicoFarads<br> - ºC / W<br> - Amperes<br>IC Z(th)JC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
300<br>TJ  = 25ºC JJ  = 25ºC JJ  = 25ºC J<br>250        125ºC<br>200<br>150<br>100<br>VGEGE = 0V<br>50 V GE = 15V  15V<br>0<br>0 1 2 3 4 5 6 7<br>VF - VoltsF - Volts - Volts<br> - Amperes<br>IFF<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

## **IXBX50N360HV** 

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**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>1000<br>RG = 5Ω , VGE = 15V<br>900<br>VCE = 960V<br>800<br>700 I C = 100A<br>600<br>500 I C = 50A<br>400<br>300<br>200<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


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Fig. 14. Resistive Turn-on Rise Time vs.<br> Collector Current<br>1400<br>1200 RG = 5Ω , VGE = 15V<br>VCE = 960V<br>1000<br>TJ = 125ºC<br>800<br>600<br>400<br>TJ = 25 º C<br>200<br>0<br>25 35 45 55 65 75 85 95 105<br>IC - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


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Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br> Gate Resistance  Junction Temperature<br>1200 130 2200 230<br>t r t d(on) - - - -  t f t d(off) - - - -<br>2000 220<br>1100 TJ = 125ºC,  VGE = 15V 110 RG = 5Ω,  VGE = 15V<br>V CE  = 960V        VCE = 960V<br>1800 210<br>1000 90<br>I  C  = 50A, 100A 1600 I C = 50A 200<br>900 70<br>1400 190<br>800 50<br>1200 180<br>700 30 1000 I  C  = 100A 170<br>600 10 800 160<br>5 10 15 20 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Collector Current  Gate Resistance<br>3200 280 2400 1100<br>t f t d(off) - - - -  2200 t f td(off) - - - -  1000<br>2800 260<br>RG = 5Ω,  VGE = 15V 2000  TJ = 125ºC,  VGE = 15V 900<br>VCE = 960V        VCE = 960V<br>2400 240 1800 800<br>2000 220 1600 I  C  = 50A 700<br>1400 600<br>1600 200 1200 I C = 100A 500<br>1200 180 1000 400<br>T J = 125ºC, 25ºC<br>800 300<br>800 160<br>600 200<br>400 140 400 100<br>25 35 45 55 65 75 85 95 105 5 10 15 20 25 30 35 40<br>IC - Amperes RG - Ohms<br>t - Nanosecondsr  d(on)t t - Nanosecondsf  d(off)t<br> - Nanoseconds  - Nanoseconds<br> d(off)t  d(off)t<br>t - Nanosecondsf t - Nanosecondsf<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


© 2016 IXYS CORPORATION,  All Rights Reserved 

## **IXBX50N360HV** 

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**----- Start of picture text -----**<br>
Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC<br>**----- End of picture text -----**<br>


**Fig. 20. Forward-Bias Safe Operating Area @ TC = 75ºC** 

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**----- Start of picture text -----**<br>
1000 1000<br>VCE(sat) Limit VCE(sat) Limit<br>100 100<br>10 25µs 10<br>SP RS28oWN EFS. 25µs<br>100µs<br>100µs<br>1ms<br>1 1<br>1ms<br>7] RN LE ORY<br>TJ = 150ºC TJ = 150ºC<br>0.1 NG TC = 25ºC 10ms 0.1 ANN TC = 75ºC<br>Single Pulse DC Single Pulse  10ms<br>100ms DC<br>0.01 il 0.01 HH 100ms<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>VCE - Volts VCE - Volts<br> - Amperes   - Amperes<br>IC IC<br>**----- End of picture text -----**<br>


**TO-247PLUS-HV Outline** 

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**----- Start of picture text -----**<br>
1 - Gate<br>2 - Emitter<br>3,4 - Collector<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS REF: B_50N360(H8) 7-25-14 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixbx50n360hv/transistor-3-6kv-125a/dp/3930055)
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