# IGBT, 104 A, 2.5 V, 500 W, 3 kV, TO-268HV, 3 Pins

![Product image](https://novapart.co/image/farnell:3930188/)

**URL**: https://novapart.co/products/IXBT42N300HV/igbt-104-a-25-v-500-w-3-kv-to-268hv-pins
**SKU**: IXBT42N300HV
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €31.9100
**Stock**: 200+
**Lead Time**: 373 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 500W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-268HV |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 104A |
| Collector Emitter Voltage Max | 3kV |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930188/)

## Preliminary Technical Information 

## **High Voltage, BiMOSFET[TM] Monolithic Bipolar MOS Transistor** 

## **IXBT42N300HV IXBH42N300HV** 

**V =   3000V** CES **I =   42A** C110 **V  3.0V** CE(sat) 

## **TO-268HV (IXBT)** 

|**Symbol      Test Conditions**|**Symbol      Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**|TC= 25°C to 150°C                                                   3000|= 25°C to 150°C                                                   3000|V|
|**VCGR**|TJ=  25°C to 150°C, RGE= 1M|3000|V|
|**VGES**|Continuous<br>± 25|± 25|V|
|**VGEM**|Transient<br>± 35|± 35|V|
|**IC25**|TC= 25°C|104|A|
|**IC110**|TC= 110°C|42|A|
|**ICM**|TC= 25°C, 1ms|400|A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 20|ICM=  84|A|
|**(RBSOA)**|Clamped Inductive Load                                           1500                          V|Clamped Inductive Load                                           1500                          V|Clamped Inductive Load                                           1500                          V|
|**TSC**V|VGE= 15V, TJ= 125°C,|10|μs|
|**(SCSOA)**R|RG= 82, VCE= 1500V, Non-Repetitive|||
|**PC**|TC= 25°C|500|W|
|**TJ**|-55 ... +150|-55 ... +150<br>°C|°C|
|**TJM**||150<br>°C|°C|
|**Tstg**|-55 ... +150|-55 ... +150<br>°C|°C|
|**TL**|1.6mm (0.062 in.) from Case for 10s                           300|1.6mm (0.062 in.) from Case for 10s                           300<br>°C|°C|
|**TSOLD**|Plastic Body for 10 seconds                                       260|Plastic Body for 10 seconds                                       260<br>°C|°C|
|**Md**|Mounting Torque (TO-247HV)                              1.13/10              Nm/lb.in|Mounting Torque (TO-247HV)                              1.13/10              Nm/lb.in||
|**Weight**|TO-268HV|4|g|
||TO-247HV|6 g|g|



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**----- Start of picture text -----**<br>
G<br>E<br>   C (Tab)<br>G<br>E<br>C C (Tab)<br>**----- End of picture text -----**<br>


## **TO-247HV (IXBH)** 

G  = Gate            C      =  Collector E  = Emitter        Tab   =  Collector 

## **Features** 

- High Voltage Package 

- High Blocking Voltage  High Peak Current Capability  Low Saturation Voltage  FBSOA  SCSOA 

## **Advantages** 

|(T= 25°C Unless Otherwise Specified)**Min.         Typ.        Max.**|**Min.         Typ.        Max.**|**Min.         Typ.        Max.**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.        Max.**|**Min.         Typ.        Max.**|**Min.         Typ.        Max.**|
|**BVCES**<br>IC= 1mA, VGE= 0V<br>3000                                  V|3000                                  V|3000                                  V|
|**VGE(th)**<br>IC= 1mA, VCE= VGE<br>3.0||5.0<br>V|
|**ICES**<br>VCE= 0.8 • VCES, VGE= 0V<br>TJ= 125°C<br>250|250|50   μA<br>μA|
|**IGES**<br>VCE= 0V, VGE= ± 25V||±200   nA|
|**VCE(sat)**<br>IC= 42A, VGE= 15V, Note 1<br>2.5<br>TJ= 125°C<br>3.1                      V|2.5<br>3.1                      V|3.0<br>V<br>3.1                      V|



- Low Gate Drive Requirement 

- High Power Density 

## **Applications** 

- Laser Generators 

- Capacitor Discharge Circuits  AC Switches  Protection Circuits 

© 2014 IXYS CORPORATION, All Rights Reserved 

DS100512A(12/14) 

## **IXBT42N300HV IXBH42N300HV** 

|**SymbolTest Conditions**<br>**Characteristic Values**<br>~~Ml~~XYs<br>eT|**IXBT42N300HV**<br>**IXBH42N300HV**|**IXBT42N300HV**<br>**IXBH42N300HV**|**IXBT42N300HV**<br>**IXBH42N300HV**|
|---|---|---|---|
|IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.<br>**Symbol Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.**<br>**Max.**<br>**gfS**<br>IC= 42A, VCE= 10V, Note 1                        28              45<br>S<br>**Cies**<br>4780<br>pF<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz                                    170<br>pF<br>**Cres**<br>56<br>pF<br>**RGi**<br>Gate Input Resistance<br>3.0<br><br>**Qg**<br>200<br>nC<br>**Qge**<br>IC= 42A, VGE= 15V, VCE= 1000V                                 28<br>nC<br>**Qgc**<br>75<br>nC<br>**td(on)**<br>72<br>ns<br>**tr**<br>330<br>ns<br>**td(off)**<br>445<br>ns<br>**tf**<br>610                       ns<br>**td(on)**<br>72                       ns<br>**tr**<br>580                       ns<br>**td(off)**<br>460<br>ns<br>**tf**<br>490<br>ns<br>**RthJC**<br>0.25  °C/W<br>**RthCS**<br>TO-247HV                                                                   0.21<br>°C/W<br>**Resistive Switching Times, TJ = 125°C**<br>IC= 42A, VGE= 15V<br>VCE= 1500V, RG= 20<br>**Resistive Switching Times, TJ = 25°C**<br>IC= 42A, VGE= 15V<br>VCE= 1500V, RG= 20<br>**Reverse Diode**<br>**Symbol   Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.         Max**<br>**VF**<br>IF= 42A, VGE= 0V, Note 1<br>2.5 V<br>**trr**<br>1.7                μs<br>**IRM**<br>43<br>A<br>IF= 21A, VGE= 0V, -diF/dt = 100A/μs<br>VR= 100V, VGE= 0V<br>Note       1.Pulse test, t < 300s, duty cycle, d < 2%.<br>**PRELIMINARY TECHNICAL INFORMATION**<br>The product presented herein is under development.  The Technical Specifications offered are<br>derived from a subjective evaluation of the design, based upon prior knowledge and experi-<br>ence, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right<br>to change limits, test conditions, and dimensions without notice.<br>PINS:<br>1 - Gate  2 - Emitter<br>3 - Collector<br>~~a~~|**TO-268HV Outline**<br>E<br>E1<br>L2<br>D1<br>D3<br>A1<br>L4<br>D2<br>C2<br>b<br>2<br>1<br>A<br>H<br>C<br>3<br>D<br>2<br>1<br>e<br>e<br>A2<br>L3<br>L<br>3<br>PINS:<br>1 - Gate  2 - Emitter<br>3 - Collector<br>~~+~~<br>Lf<br>~~a~~<br>_|<br>a<br>-<br>ake<br>es<br>FECOMMENDED MINIMUM FOOT PRaNT<br>[sym fag<br>H<br>E<br>| MILLIMETER _ |<br>| Db<br>| .543 | 551 113.80 [14.00 ||||
||**TO-247HV Outline**<br>PINS:<br>1 - Gate    2 - Emitter<br>3, 4 - Collector<br>E<br>R<br>A<br>Q<br>S<br>A3<br>e<br>D<br>c<br>b<br>A1<br>L1<br>D3<br>D1<br>D2<br>E2<br>E3<br>3X<br>2X<br>4X<br>3X<br>A2<br>b1<br>0P<br>E1<br>0P1<br>4<br>3<br>1   2<br>e1<br>L<br>~~a2~~<br>+<br>SS~~A~~<br>et<br>Tl<br>_<br>mice<br>(®)<br>~~W~~e<br>~~a~~ ~~=~~<br>7 Oo a<br>~~|~~|<br>~~|~~<br>| |<br>|<br>|<br>MU<br>a=<br>_|<br>|<br>as<br>sym a EE MIN EH<br>PA | 193 [e201 | 4.90] 5.10 |<br>| A2 | 075 | 083 | 190] 210 |<br>| AS | 035 | 043 | 0.90 | 110 |<br>| b | 053 | 059 | 135] 150 |<br>P bi fT 075[083 [190 7 210 |<br>| D_ | 819 | 843 | 20,80 | 21,40 |<br>| D1] 638 | 646 | 16.c0 | 16.40 |<br>| DS] 055 | 063 | 140] 160 |<br>| E | 622 | 638 | 15.80 | 16.20 |<br>| E171| Seo | 5e8 | 13.20 | 13.40 |<br>pe |<br>100 BSC | 2.54 BSC<br>|<br>| ei | .300 BSC. | 7.62 BSC<br>oP | 138 | 142 | 3.50] 3,60 |<br>|;ePit e7e] eso | 690] 710 |<br>| QO | 26 | 2e4 | 5.50] 5,70 |<br>| R_| 65 [169 | 4.20 | 4,30 ||b<br>D1<br>D2<br>E2<br>E3<br>0P1<br>7<br>~~|~~<br>~~|~~|b<br>D1<br>D2<br>E2<br>E3<br>3X<br>4X<br>b1<br>E1<br>0P1<br>4<br>et<br>_<br>(®)<br>7 Oo a<br>~~|~~|<br>~~|~~<br>|<br>MU|
||||3X<br>3X<br>|<br>MU|



Note       1.  Pulse test, t < 300s, duty cycle, d < 2%. 

## **PRELIMINARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXBT42N300HV IXBH42N300HV** 

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Fig. 1. Output Characteristics @ TJ = 25ºC<br>90<br>V GE = 25V<br>80           20V<br>         15V<br>70<br>60 10V<br>50<br>40<br>30<br>20<br>10<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


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Fig. 3. Output Characteristics @ TJ = 125ºC<br>90<br>V GE = 25V<br>80           20V<br>          15V<br>70<br>60<br>10V<br>50<br>40<br>30<br>20<br>10 5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


## **Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage** 

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Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>320<br>VGE = 25V<br>280<br>          20V  15V<br>240<br>200<br>10V<br>160<br>120<br>80<br>40<br>5V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VCE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


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Fig. 4. Dependence of VCE(sat) on<br>Junction Temperature<br>1.8<br>VGE = 15V<br>1.6<br>1.4 I C = 84A<br>1.2<br>I C = 42A<br>1.0<br>0.8 I C = 21A<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Fig. 6. Input Admittance** 

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5.5 200<br>5.0 TJ  = 25ºC  180 TJ = - 40ºC<br>160           25 º C<br>4.5         125 º C<br>140<br>4.0<br>120<br>3.5 I  C = 84A 100<br>80<br>3.0<br>42A 60<br>2.5<br>40<br>2.0<br>21A 20<br>1.5 0<br>5 7 9 11 13 15 17 19 21 23 25 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5<br>VGE - Volts VGE - Volts<br> - Volts Amperes<br>CE  -<br>V IC<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

## **IXBT42N300HV IXBH42N300HV** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>80 140<br>TJ = - 40ºC<br>70 120<br>60<br>25ºC 100 TJ  = 25ºC<br>50<br>80 TJ = 125ºC<br>125ºC<br>40<br>60<br>30<br>40<br>20<br>10 20<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 0.5 1 1.5 2 2.5 3 3.5<br>IC - Amperes VF - Volts<br>Siemens<br> -<br> - Amperes<br>g f s IF<br>**----- End of picture text -----**<br>


**Fig. 9. Gate Charge** 

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Fig. 10. Capacitance<br>**----- End of picture text -----**<br>


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16 10,000<br>14  VCE = 1000V<br> I  C = 42A Cies<br>12  I G = 10mA<br>1,000<br>10<br>8<br>Coes<br>6<br>100<br>4<br>C res<br>2<br>f = 1 MHz<br>0 10<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VCE - Volts<br>Fig. 12. Maximum Transient Thermal Impedance<br>Fig. 11. Reverse-Bias Safe Operating Area<br>90 1<br>80<br>70<br>60 0.1<br>50<br>40<br>30 0.01<br>20  T J = 125ºC<br>10  RG = 20Ω<br> dv / dt < 10V / ns<br>0 0.001<br>250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VCE - Volts Pulse Width - Seconds<br> - Volts<br>GE<br>V<br>Capacitance - PicoFarads<br> - Amperes  - ºC / W<br>IC Z(th)JC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

## **IXBT42N300HV IXBH42N300HV** 

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**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs.<br> Junction Temperature<br>650<br> RG = 20Ω , VGE = 15V<br>600<br> VCE = 1500V<br>550<br>500<br>450 I  C  = 84A<br>400<br>I  C = 42A<br>350<br>300<br>250<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


## **Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
1800 360<br>1600 t r t d(on) - - - - 320<br> TJ = 125ºC,  VGE = 15V<br>1400  VCE = 1500V        280<br>1200 I C = 84A 240<br>1000 200<br>800 160<br>I  C  = 42A<br>600 120<br>400 80<br>200 40<br>20 40 60 80 100 120 140 160 180<br>RG - Ohms<br>Fig. 17. Resistive Turn-off Switching Times vs.<br> Collector Current<br>800 500<br>t f t d(off) - - - -<br>700  R G  = 20Ω,  V GE  = 15V 480<br> VCE = 1500V<br>600 460<br>TJ = 25ºC<br>500 440<br>400 420<br>TJ = 125ºC<br>300 400<br>200 380<br>40 45 50 55 60 65 70 75 80 85<br>IC - Amperes<br> d(on)t<br> - Nanosecondsr<br>t<br> - Nanoseconds<br>t<br> - Nanosecondsf d(off)<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


## **Fig. 14. Resistive Turn-on Rise Time vs. Collector Current** 

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**----- Start of picture text -----**<br>
650<br>600<br>550 TJ = 125ºC<br>500  R G = 20Ω , V GE  = 15V<br> VCE = 1500V<br>450<br>400<br>T J  = 25ºC<br>350<br>300<br>250<br>40 45 50 55 60 65 70 75 80 85<br>IC - Amperes<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br>


**Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
800 500<br>t f t d(off) - - - -<br>700  RG = 20Ω,  VGE = 15V 480<br> VCE = 1500V<br>600 460<br>I C = 42A<br>500 440<br>400 420<br>300 I  C  = 84A 400<br>200 380<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times vs.<br> Gate Resistance<br>1100 3600<br>1000  t f t d(off) - - - -   3200<br> T J  = 125ºC,  V GE  = 15V<br>900 2800<br> VCE = 1500V<br>800 2400<br>I C = 42A<br>700 2000<br>600 1600<br>500 1200<br>400 800<br>I C = 84A<br>300 400<br>200 0<br>20 40 60 80 100 120 140 160 180<br>RG - Ohms<br>t<br> - Nanosecondsf d(off)<br>t<br> - Nanoseconds<br>t<br> - Nanoseconds d(off)<br>f i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2014 IXYS CORPORATION, All Rights Reserved 

**IXBT42N300HV IXBH42N300HV** 

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**----- Start of picture text -----**<br>
Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC<br>1000<br>VCE(sat) Limit<br>100<br>10<br>25µs<br>100µs<br>1<br>1ms<br>0.1 10ms<br>100ms<br>DC<br>TJ = 150ºC<br>0.01<br>TC = 25ºC<br>Single Pulse<br>0.001<br>1 10 100 1000 10000<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


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Fig. 20. Forward-Bias Safe Operating Area @ TC = 115ºC<br>1000<br>VCE(sat) Limit<br>100<br>10<br>25µs<br>1 100µs<br>1ms<br>0.1<br>10ms<br>0.01 TJ = 150ºC 100ms<br>TC = 115ºC DC<br>Single Pulse<br>0.001<br>1 10 100 1000 10000<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS REF: B_42N300(8M)11-09-12-A 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXBT42N300HV/igbt-104-a-25-v-500-w-3-kv-to-268hv-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixbt42n300hv/transistor-3kv-104a-to-268hv/dp/3930188)
---

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