# TRANSISTOR, IGBT, 1.7KV, 200A, TO-264

![Product image](https://novapart.co/image/farnell:3953523/)

**URL**: https://novapart.co/products/IXBK75N170/transistor-igbt-17kv-200a-to-264
**SKU**: IXBK75N170
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €39.4100
**Stock**: 10+
**Lead Time**: 494 days (indicative)

## Description

Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04kW; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; O 03AH0372

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 1.04kW |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-264 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 200A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Saturation Voltage | 2.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3953523/)

Preliminary Technical Information 

## **BiMOSFET[TM] Monolithic Bipolar MOS Transistor** 

## **IXBK75N170 IXBX75N170** 

**V =   1700V CES I =   75A C110 V ≤ 3.1V CE(sat)** 

## **TO-264 (IXBK)** 

|**Symbol**|**Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**<br>T|TJ= 25°C to 150°C|1700                  V|1700                  V|
|**VCGR**<br>T|TJ= 25°C to 150°C, RGE= 1MΩ|1700                  V|1700                  V|
|**VGES**|Continuous<br>±20                 V|±20                 V|±20                 V|
|**VGEM**|Transient<br>±30                   V|±30                   V|±30                   V|
|**IC25**|TC = 25°C (Chip Capabilitty)                                       200                   A|= 25°C (Chip Capabilitty)                                       200                   A|= 25°C (Chip Capabilitty)                                       200                   A|
|**ILRMS**|TC = 25°C (Lead RMS Limit)                                                            160                             A|= 25°C (Lead RMS Limit)                                                            160                             A|= 25°C (Lead RMS Limit)                                                            160                             A|
|**IC110**|TC = 110°C<br>75                    A|75                    A|75                    A|
|**ICM**|TC = 25°C, 1ms|580                     A|580                     A|
|**SSOA**<br>**(RBSOA)**|VGE= 15V, TVJ= 125°C, RG= 1ΩI<br>Clamped Inductive Load<br>VCE|ICM= 150                    A<br>CE<br><0.8**•**VCES|= 150                    A|
|**PC**|TC = 25°C<br>1040                  W|1040                  W|1040                  W|
|**TJ**|-55 ... +150                    °C|-55 ... +150                    °C|-55 ... +150                    °C|
|**TJM**|150                     °C|150                     °C|150                     °C|
|**Tstg**|-55 ... +150                     °C|-55 ... +150                     °C|-55 ... +150                     °C|
|**TL**|Maximum Lead Temperature for Soldering                    300                    °C|Maximum Lead Temperature for Soldering                    300                    °C|Maximum Lead Temperature for Soldering                    300                    °C|
|**TSOLD**|1.6 mm (0.062 in.) from Case for 10                               260|1.6 mm (0.062 in.) from Case for 10                               260|°C|
|**Md**|Mounting Torque (TO-264 )<br>1.13/10    Nm/lb.in.|1.13/10    Nm/lb.in.||
|**FC**|Mounting Force   (PLUS247 )<br>20..120/4.5..27               N/lb.||20..120/4.5..27               N/lb.|
|**Weight**|TO-264|10                    g|10                    g|
||PLUS247|6|g|



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**----- Start of picture text -----**<br>
G<br>C     Tab<br>E<br>**----- End of picture text -----**<br>


## **PLUS247[TM] (IXBX)** 

**==> picture [77 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>C     Tab<br>E<br>**----- End of picture text -----**<br>


G = Gate C     =  Collector E = Emitter Tab =  Collector 

## **Features** 

International Standard Packages High Blocking Voltage High Current Handling Capability Anti-Parallel Diode 

## **Advantages** 

High Power Density Low Gate Drive Requirement Intergrated Diode Can Be Used for 

|**Symbol**<br>(T= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**<br>~~=~~|**Min.       Typ.       Max.**<br>~~=~~|
|---|---|---|
|(TJ= 25°C, Unless Otherwise Specified)<br>**Min.       Typ.       Max.**|**Min.       Typ.       Max.**<br>~~=~~|**Min.       Typ.       Max.**<br>~~=~~|
|**BVCES**<br>IC<br>= 250μA,  VGE= 0V<br>1700|V<br>~~=~~|V<br>~~=~~|
|**VGE(th)**<br>IC<br>= 1.5mA, VCE= VGE<br>2.5|5.5     V<br>~~=~~|5.5     V<br>~~=~~|
|**ICES**<br>VCE = 0.8**•**VCES, VGE= 0V<br>25   μA<br>TJ= 125°C<br>2  mA|25   μA<br>2  mA|25   μA<br>2  mA|
|**IGES**<br>VCE = 0V, VGE= ± 20V|±100   nA<br>~~|~~|±100   nA<br>~~|~~|
|**VCE(sat)**<br>IC<br>= IC110, VGE= 15V, Note 1<br>2.6         3.1     V<br>TJ= 125°C<br>3.1                 V|2.6         3.1     V<br>3.1                 V<br>|2.6         3.1     V<br>3.1                 V<br>|



Protection 

## **Applications** 

Capacitor Discharge AC Switches Switch-Mode and Resonant-Mode Power Supplies e UPS 

±100   nA ~~|~~ Power Supplies e 

AC Motor Drives 

DS100167A(10/09) 

© 2009 IXYS CORPORATION, All Rights Reserved 

**IXBK75N170 IXBX75N170** 

|**Symbol Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)<br>**Min.**|**Symbol Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)<br>**Min.**|**Characteristic Values**<br>**Min.**<br>**Typ.        Max.**|**Characteristic Values**<br>**Min.**<br>**Typ.        Max.**|**Characteristic Values**<br>**Min.**<br>**Typ.        Max.**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|**TO-264 AA ( IXBK) Outline**|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**gfS**|IC= IC110, VCE= 10V, Note 1                      34                56|= 10V, Note 1                      34                56||S||||||||||||||
|**Cies**|6930|6930||pF||||||||||||||
|**Coes**|VCE= 25V, VGE= 0V, f = 1MHz                                    400|= 0V, f = 1MHz                                    400||pF||||||||||||||
|**Cres**|150|150||pF||||||||||||||
|**Qg**|350|350|nC|nC||||||||||||||
|**Qge**|IC= IC110, VGE= 15V, VCE= 0.5**•**VCES50|50||nC||||||||||||||
|**Qgc**|160|160||nC||||||||||||||
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**td(on)**<br>**tr**<br>**td(off)**<br>**tf**<br>**RthJC**<br>**RthCS**|46<br>160<br>260<br>440<br>47<br>230<br>260<br>580<br>0.15<br>**Resistive load, TJ = 25°C**<br>IC= IC110, VGE= 15V<br>RG= 1Ω,VCE= 0.5 • VCES<br>**Resistive load, TJ = 125°C**<br>IC= IC110, VGE= 15V<br>RG= 1Ω,VCE= 0.5 • VCES<br>~~pr~~<br>|<br>-<br>~~-~~||ns<br>~~-~~|ns<br>ns<br>ns<br>ns<br>ns<br>ns<br>ns<br>ns<br>0.12  °C/W<br>°C/W<br>~~-~~||~~-~~|Dim.<br>A<br>A1<br>A2<br>b<br>b1<br>b2<br>c<br>D<br>25.91<br>E<br>e<br>J<br>K<br>L<br>L1<br>P<br>Q<br>Q1<br>R<br>R1<br>S<br>~~-~~|||Millimeter<br>Min.<br>Max.<br>4.82<br>5.13<br>2.54<br>2.89<br>2.00<br>2.10<br>1.12<br>1.42<br>2.39<br>2.69<br>2.90<br>3.09<br>0.53<br>0.83<br>25.91<br>26.16<br>19.81<br>19.96<br>5.46 BSC<br>0.00<br>0.25<br>0.00<br>0.25<br>20.32<br>20.83<br>2.29<br>2.59<br>3.17<br>3.66<br>6.07<br>6.27<br>8.38<br>8.69<br>3.81<br>4.32<br>1.78<br>2.29<br>6.04<br>6.30<br>~~a~~<br>~~_=~~<br>~~-—~~||||Inches<br>Min.<br>Max.<br>.190<br>.202<br>.100<br>.114<br>.079<br>.083<br>.044<br>.056<br>.094<br>.106<br>.114<br>.122<br>.021<br>.033<br>1.020<br>1.030<br>.780<br>.786<br>.215 BSC<br>.000<br>.010<br>.000<br>.010<br>.800<br>.820<br>.090<br>.102<br>.125<br>.144<br>.239<br>.247<br>.330<br>.342<br>.150<br>.170<br>.070<br>.090<br>.238<br>.248<br>~~=~~<br>~~—~~||||
|**Reverse Diode**|||||||T<br>|||1.57<br>1.83<br>~~—~~|||~~—~~|.062<br>~~—~~|.072<br>~~—~~|||
|||||||||||||||||||
|||||||||||||||||||
|**Symbol   Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.         Max**||**Characteristic Values**<br>**Min.         Typ.         Max**||||**PLUS247TM (IXBX) Outline**||||||||||||
|||||||||||||||||||
|**VF**|IF= IC110, VGE= 0V, Note 1|||3.0 V||||||||||||||
|**trr**<br>**IRM**<br>**QRM**|1.5                μs<br>IF= 37A, VGE= 0V, -diF/dt = 100A/μs<br>VR= 100V, VGE= 0V|1.5                μs<br>50                      A<br>38.2|1.5                μs<br>50                      A<br>38.2|1.5                μs<br>50                      A<br>μC||||||||||||||
|||||||||||||||||||
|||||||||||||||||||
||||||||||~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~<br>~~io~~|~~|~~<br>~~io~~|~~|~~<br>~~io~~|
|Note|||||||||~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~<br>~~io~~|~~|~~<br>~~io~~|~~|~~<br>~~io~~|
|1. Pulse test, t<br>Additional provisions for lead-to-lead isolation are required at V|1. Pulse test, t≤300μs, duty cycle, d≤2%.<br>Additional provisions for lead-to-lead isolation are required at VCE>1200V.|||||Terminals:<br>1 - Gate<br>2 - Drain (Collector)<br>3 - Source (Emitter)<br>Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.<br>~~|~~||||||||||||
||||||||A<br>A1<br>A2|||4.83<br>5.21<br>2.29<br>2.54<br>1.91<br>2.16||||.190<br>.090<br>.075|.205<br>.100<br>.085|||
||**PRELIMINARY TECHNICAL INFORMATION**||||||b|||1.14<br>1.40||||.045|.055|||
|The product presented herein is under development.  The Technical Specifications offered are derived<br>from data gathered during objective characterizations of preliminary engineering lots; but also may yet<br>contain some information supplied during a pre-production design evaluation.  IXYS reserves the right<br>to change limits, test conditions, and dimensions without notice.|||||||b1<br>b2<br>C<br>D<br>E|||1.91<br>2.13<br>2.92<br>3.12<br>0.61<br>0.80<br>20.80<br>21.34<br>15.75<br>16.13||||.075<br>.115<br>.024<br>.819<br>.620|.084<br>.123<br>.031<br>.840<br>.635|||
||||||||e|||5.45 BSC||||.215 BSC|.215 BSC|||
||||||||L|||19.81<br>20.32||||.780|.800|||
||||||||L1|||3.81<br>4.32||||.150|.170|||
||||||||Q|||5.59<br>6.20||||.220|0.244|||
|IXYS Reserves the Ri|IXYS Reserves the Riht to Chane Limits, Test Conditions, and Dimensions.|e Limits, Test Conditions, and Dimensions.|||||R|||4.32<br>4.83||||.170|.190|||



IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXBK75N170 IXBX75N170** 

**==> picture [263 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics<br>@ 25ºC<br>160<br>V GE = 25V<br>          19V<br>140<br>          15V<br>         13V<br>120          11V<br>100 9V<br>80<br>60<br>40 7V<br>20<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


## **Fig. 3. Output Characteristics @ 125ºC** 

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160<br>VGE = 25V<br>140           19V<br>          15V<br>          13V<br>120           11V<br>100<br>80 9V<br>60<br>7V<br>40<br>20<br>5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>VCE - Volts<br>Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage<br>5.5<br>5.0 TJ  = 25ºC<br>4.5<br>4.0<br>I C = 150A<br>3.5<br>3.0 75A<br>2.5<br>2.0 37.5A<br>1.5<br>5 7 9 11 13 15 17 19 21 23 25<br>VGE - Volts<br> - Amperes<br>IC<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


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Fig. 2. Extended Output Characteristics<br>@ 25ºC<br>320<br>VGE = 25V<br>280           17V<br>          15V<br>          13V<br>240<br>11V<br>200<br>160<br>9V<br>120<br>80<br>40<br>7V<br>0<br>0 2 4 6 8 10 12 14 16 18<br>VCE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


## **Fig. 4. Dependence of VCE(sat) on Junction Temperature** 

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**----- Start of picture text -----**<br>
1.7<br>1.6 VGE = 15V<br>1.5<br>I  C  = 150A<br>1.4<br>1.3<br>1.2<br>I  C  = 75A<br>1.1<br>1.0<br>0.9<br>0.8 I C = 37.5A<br>0.7<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


**Fig. 6. Input Admittance** 

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**----- Start of picture text -----**<br>
200<br>180<br>160<br>140<br>120<br>100<br>TJ  = 125ºC<br>80           25ºC<br>        - 40ºC<br>60<br>40<br>20<br>0<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5<br>VGE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: B_75N170(8T)7-01-09 

**IXBK75N170 IXBX75N170** 

**==> picture [262 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance<br>90<br>TJ = - 40 º C<br>80<br>125ºC<br>70<br>25ºC<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>IC - Amperes<br>Fig. 9. Gate Charge<br>16<br>14  VCE = 850V<br> I C = 75A<br>12  I  G = 10mA<br>10<br>8<br>6<br>4<br>2<br>0<br>0 40 80 120 160 200 240 280 320 360<br>QG - NanoCoulombs<br>Siemens<br> -<br> f s<br>g<br> - Volts<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 8. Forward Voltage Drop of<br>Intrinsic Diode<br>300<br>250<br>T J   = 25ºC<br>200<br>TJ = 125ºC<br>150<br>100<br>50<br>0<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4<br>VF - Volts<br> - Amperes<br>IF<br>**----- End of picture text -----**<br>


**Fig. 10. Capacitance** 

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**----- Start of picture text -----**<br>
100,000<br>f = 1 MHz<br>10,000 C ies<br>1,000<br>Coes<br>100<br>Cres<br>10<br>0 5 10 15 20 25 30 35 40<br>VCE - Volts<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance<br>160 1.000<br>140<br>120<br>0.100<br>100<br>80<br>60<br>0.010<br>40<br> TJ = 125ºC<br>20  RG = 1Ω<br> dV / dt < 10V / ns<br>0 0.001<br>200 400 600 800 1000 1200 1400 1600 1800 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VCE - Volts Pulse Width - Seconds<br> - ºC / W<br> - Amperes<br>IC Z(th)JC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

## **IXBK75N170 IXBX75N170** 

**Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature** 

**Fig. 14. Resistive Turn-on Rise Time vs. Collector Current** 

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**----- Start of picture text -----**<br>
400 450<br> RG = 1Ω , VGE = 15V 400  R G = 1Ω , V GE = 15V<br>360  V CE  = 850V  VCE = 850V<br>350<br>320 I C = 150A T J  = 125ºC<br>300<br>280 250<br>240 200<br>T J  = 25ºC<br>150<br>200<br>100<br>I C = 75A<br>160<br>50<br>120 0<br>25 35 45 55 65 75 85 95 105 115 125 30 40 50 60 70 80 90 100 110 120 130 140 150<br>TJ - Degrees Centigrade IC - Amperes<br>t - Nanosecondsr t - Nanosecondsr<br>**----- End of picture text -----**<br>


**Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
800 80<br>700 t r t d(on) - - - -  75<br> TJ = 125ºC,  VGE = 15V<br>600  VCE = 850V        70<br>500 I C = 150A 65<br>400 60<br>I C = 75A<br>300 55<br>200 50<br>100 45<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>Fig. 17. Resistive Turn-off<br>Switching Times vs. Collector Current<br>1000 340<br>900 t f t d(off) - - - -  320<br> RG = 1Ω,  VGE = 15V<br>800 300<br> VCE = 850V<br>700 280<br>600 260<br>500 240<br>400 220<br>300 200<br>200 T J  = 125ºC, 25ºC 180<br>100 160<br>30 40 50 60 70 80 90 100 110 120 130 140 150<br>IC - Amperes<br> - Nanosecondsr  d(on)t<br>t<br> - Nanoseconds<br>t<br> - Nanosecondsf d(off)<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 16. Resistive Turn-off<br>Switching Times vs. Junction Temperature<br>800 320<br>t f t d(off) - - - -<br>700 300<br> RG = 1Ω,  VGE = 15V<br> VCE = 850V<br>600 I  C  = 75A 280<br>500 260<br>400 240<br>300 220<br>I  C = 150A<br>200 200<br>100 180<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>t<br>d(off)<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
900 520<br>800  t f t d(off) - - - -  480<br> T J  = 125ºC,  V GE  = 15V<br>700 440<br> VCE = 850V<br>600 400<br>I  C  = 75A<br>500 360<br>400 320<br>300 280<br>I C = 150A<br>200 240<br>100 200<br>0 160<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br>t<br>d(off)<br> - Nanoseconds<br>f i<br>t  - Nanoseconds<br>**----- End of picture text -----**<br>


© 2009 IXYS CORPORATION, All Rights Reserved 

IXYS REF: B_75N170(8T)7-01-09 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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---

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