# IGBT, 130 A, 2.7 V, 625 W, 3 kV, TO-264, 3 Pins

![Product image](https://novapart.co/image/farnell:3930405/)

**URL**: https://novapart.co/products/IXBK55N300/igbt-130-a-27-v-625-w-3-kv-to-264-pins
**SKU**: IXBK55N300
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €73.0700
**Stock**: 10+
**Lead Time**: 372 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 625W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-264 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 130A |
| Collector Emitter Voltage Max | 3kV |
| Collector Emitter Saturation Voltage | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930405/)

## **High Voltage, High Gain BiMOSFET[TM]** 

## **Monolithic Bipolar MOS Transistor** 

## **IXBK55N300 IXBX55N300** 

**V =   3000V CES I =   55A C110 V ≤ 3.2V CE(sat)** 

## **TO-264 (IXBK)** 

|**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**|**Maximum Ratings**||
|---|---|---|---|---|---|---|---|
|~~a~~||||||||
|**VCES**<br>T|TJ= 25°C to 150°C||||3000                   V|3000                   V|3000                   V|
|**VCGR**<br>T|TJ= 25°C to 150°C, RGE= 1MΩ||||3000                   V|3000                   V|3000                   V|
|**VGES**|Continuous<br>±25                  V|±25                  V|±25                  V|±25                  V|±25                  V|±25                  V|±25                  V|
|**VGEM**|Transient||||±35                   V|±35                   V|±35                   V|
|**IC25**|TC = 25°C  ( Chip Capability )                                   130                   A||= 25°C  ( Chip Capability )                                   130                   A|= 25°C  ( Chip Capability )                                   130                   A|= 25°C  ( Chip Capability )                                   130                   A|= 25°C  ( Chip Capability )                                   130                   A|= 25°C  ( Chip Capability )                                   130                   A|
|**ILRMS**|TC = 25°C ( Lead RMS Limit )||||120                   A|120                   A|120                   A|
|**IC110**|TC = 110°C<br>55                    A|55                    A|55                    A|55                    A|55                    A|55                    A|55                    A|
|**ICM**|TC = 25°C, 1ms||||600                     A|600                     A|600                     A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 2|= 2ΩI|ICM= 110                    A||= 110                    A|= 110                    A|= 110                    A|
|**(RBSOA)**|Clamped Inductive Load||@0.8||@0.8**•**VCES|||
|**TSC**|VGE= 15V, TJ= 125°C,|||||||
|**(SCSOA)**|RG= 10Ω, VCE= 1250V, Non-Repetitive||||10                    μs|10                    μs|10                    μs|
|**PC**|TC = 25°C<br>625                  W|625                  W|625                  W|625                  W|625                  W|625                  W|625                  W|
|**TJ**|-55 ... +150                    °C|-55 ... +150                    °C|-55 ... +150                    °C|-55 ... +150                    °C|-55 ... +150                    °C|-55 ... +150                    °C|-55 ... +150                    °C|
|**TJM**|150                     °C|150                     °C|150                     °C|150                     °C|150                     °C|150                     °C|150                     °C|
|**Tstg**|-55 ... +150                     °C|-55 ... +150                     °C|-55 ... +150                     °C|-55 ... +150                     °C|-55 ... +150                     °C|-55 ... +150                     °C|-55 ... +150                     °C|
|**TL**|Maximum Lead Temperature for Soldering                    300                    °C||Maximum Lead Temperature for Soldering                    300                    °C|Maximum Lead Temperature for Soldering                    300                    °C|Maximum Lead Temperature for Soldering                    300                    °C|Maximum Lead Temperature for Soldering                    300                    °C|Maximum Lead Temperature for Soldering                    300                    °C|
|**TSOLD**|1.6 mm (0.062 in.) from Case for 10                               260||1.6 mm (0.062 in.) from Case for 10                               260|1.6 mm (0.062 in.) from Case for 10                               260|1.6 mm (0.062 in.) from Case for 10                               260||°C|
|**Md**|Mounting Torque (TO-264 )|1.13/10    Nm/lb.in.|1.13/10    Nm/lb.in.|1.13/10    Nm/lb.in.||1.13/10    Nm/lb.in.||
|**FC**|Mounting Force   (PLUS247 )|Mounting Force   (PLUS247 )|20..120/4.5..27               N/lb.|||20..120/4.5..27               N/lb.||
|**Weight**|TO-264||||10                    g|10                    g|10                    g|
||PLUS247||||6||g|
|**Symbol**|**Test Conditions                                              Characteristic Values**|**Test Conditions                                              Characteristic Values**|**Test Conditions                                              Characteristic Values**|||**Test Conditions                                              Characteristic Values**||
|(TJ= 25°C, Unless Otherwise Specified)|C, Unless Otherwise Specified)|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**|**Min.       Typ.       Max.**||
|**BVCES**|IC<br>= 1mA,  VGE= 0V|3000|3000||V|V|V|
|**VGE(th)**|IC<br>= 4mA, VCE= VGE|3.0|3.0||5.0     V|5.0     V|5.0     V|
|**ICES**|VCE = VCES, VGE= 0V||50   μA|50   μA|50   μA|50   μA|50   μA|
||T|TJ= 125°C|3  mA|3  mA|3  mA|3  mA||
|**IGES**|VCE = 0V, VGE= ± 25V||||±200   nA|±200   nA|±200   nA|
|**VCE(sat)**|IC<br>= 55A, VGE= 15V, Note 1                                            2.7         3.2     V|= 15V, Note 1                                            2.7         3.2     V|= 15V, Note 1                                            2.7         3.2     V|= 15V, Note 1                                            2.7         3.2     V|= 15V, Note 1                                            2.7         3.2     V|= 15V, Note 1                                            2.7         3.2     V|= 15V, Note 1                                            2.7         3.2     V|
||T|TJ= 125°C|3.3                 V|3.3                 V|3.3                 V|3.3                 V|3.3                 V|



**==> picture [152 x 165] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>C<br>E<br>Tab<br>PLUS247 (IXBX)<br>G<br>G<br>C<br>Tab<br>E<br>G  = Gate E       =  Emitter<br>C  = Collector Tab   =  Collector<br>**----- End of picture text -----**<br>


## **Features** 

High Blocking Voltage International Standard Packages Low Conduction Losses High Current Handling Capability MOS Gate Turn-On - Drive Simplicity **Advantages** 

Easy to Mount Space Savings High Power Density **Applications** 

Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits Laser Generators 

DS100158A(11/11) 

© 2011 IXYS CORPORATION, All Rights Reserved 

**IXBK55N300 IXBX55N300** 

|(TJ= 25°C Unless Otherwise Specified)<br>**Min.**|**Typ.        Max.**|
|---|---|
|**gfS**<br>IC= 55A, VCE= 10V, Note 1                        32              50|= 10V, Note 1                        32              50|
|**Cies**<br>7300<br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz                                    275<br>**Cres**<br>83|7300<br>= 0V, f = 1MHz                                    275<br>83|
|**Qg**<br>335<br>**Qge**<br>IC= 55A, VGE= 15V, VCE= 1000V                                 47<br>**Qgc**<br>130|335<br>= 1000V                                 47<br>130|
|**td(on)**<br>54<br>**tr**<br>307<br>**td(off)**<br>230<br>**tf**<br>268                       ns<br>**Resistive Switching Times, TJ = 25°C**<br>IC= 110A, VGE= 15V<br>VCE= 1250V, RG= 2Ω|54<br>307<br>230<br>268                       ns|
|**td(on)**<br>52                       ns<br>**tr**<br>585                       ns<br>**td(off)**<br>215<br>**tf**<br>260<br>**Resistive Switching Times, TJ = 125°C**<br>IC= 110A, VGE= 15V<br>VCE= 1250V, RG= 2Ω|52                       ns<br>585                       ns<br>215<br>260|
|**RthJC**<br>**RthCS**<br>0.15|0.15|



**TO-264 Outline** 

**==> picture [55 x 21] intentionally omitted <==**

**----- Start of picture text -----**<br>
1    - GATE<br>  2,4  - COLLECTOR<br>  3     - EMITTER<br>**----- End of picture text -----**<br>


## **PLUS 247[TM] Outline** 

## **Reverse Diode** 

|**Symbol   Test Conditions**<br>**Characteristic Values**<br>(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.         Max**|**Characteristic Values**<br>**Min.         Typ.         Max**|**Characteristic Values**<br>**Min.         Typ.         Max**|**Characteristic Values**<br>**Min.         Typ.         Max**||
|---|---|---|---|---|
|**VF**<br>IF= 55A, VGE= 0V, Note 1|||2.5 V|V|
|**trr**<br>1.9                μs<br>IF= 28A, VGE= 0V, -diF/dt = 100A/μs|1.9                μs|1.9                μs|1.9                μs|1.9                μs|
|**IRM**<br>VR= 100V, VGE= 0V||54||A|



Note         1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. 

Additional provisions for lead-to-lead isolation are required at VCE >1200V. 

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

|b<br>b1|~~|~~ <br>b2|~~|~~ <br>b2|<br> |<br>fe]|<br> |<br>fe]|<br> |<br>fe]|<br> |<br>fe]|<br> |<br>fe]|**1  - GATE**|**1  - GATE**<br>~~A~~l<br>~~iE~~c|**1  - GATE**<br>~~A~~l<br>~~iE~~c|**1  - GATE**<br>~~A~~l<br>~~iE~~c|**1  - GATE**<br>~~A~~l<br>~~iE~~c|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||**2  - COLLECTOR**|**2  - COLLECTOR**|**2  - COLLECTOR**||||
||||||||**3  - EMITTER**|**3  - EMITTER**|**3  - EMITTER**||||
|Dim.|Millimeter||||||||Inches||||
||Min.||||Max.||||Min.|Max.|||
|A|4.83|||||5.21|||.190|.205|||
|A1|2.29|||||2.54|||.090|.100|||
|A2|1.91|||||2.16|||.075|.085|||
|b|1.14|||||1.40|||.045|.055|||
|b1|1.91|||||2.13|||.075|.084|||
|b2|2.92|||||3.12|||.115|.123|||
|C|0.61|||||0.80|||.024|.031|||
|D|20.80||||21.34||||.819|.840|||
|E|15.75||||16.13||||.620|.635|||
|e|5.45 BSC|||5.45 BSC|5.45 BSC||||.215 BSC|.215 BSC|||
|L|19.81||||20.32||||.780|.800|||
|L1|3.81|||||4.32|||.150|.170|||
|Q|5.59|||||6.20|||.220|0.244|||
|R|4.32|||||4.83|||.170|.190|||



IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXBK55N300 IXBX55N300** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC<br>120<br>VGE = 25V<br>          20V<br>100<br>          15V<br>80<br>10V<br>60<br>40<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125ºC<br>120<br>VGE = 25V<br>          20V<br>100          15V<br>80<br>60 10V<br>40<br>20<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


**==> picture [264 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>300<br>VGE = 25V<br>          20V<br>250          15V<br>200<br>10V<br>150<br>100<br>50<br>5V<br>0<br>0 1 2 3 4 5 6 7 8<br>VCE - Volts<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


**Fig. 4. Dependence of VCE(sat) on Junction Temperature** 

**==> picture [254 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.8<br>VGE = 15V<br>1.6<br>1.4 I  C = 110A<br>1.2 I  C  = 55A<br>1.0<br>I C = 27.5A<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


## **Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage** 

**Fig. 6. Input Admittance** 

**==> picture [528 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.5 180<br>TJ  = 25ºC  160<br>5.0<br>140<br>4.5<br>120<br>4.0 I  C = 110A 100<br>80<br>3.5<br>TJ  = 125ºC<br>60           25ºC<br>3.0 55A         - 40ºC<br>40<br>2.5<br>20<br>27.5A<br>2.0 0<br>5 6 7 8 9 10 11 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>VGE - Volts VGE - Volts<br> - Volts Amperes<br>CE  -<br>V IC<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION, All Rights Reserved 

**IXBK55N300 IXBX55N300** 

**==> picture [536 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>100 180<br>90 TJ = - 40ºC 160<br>80 140<br>70 25ºC<br>120<br>60 125ºC TJ  = 25ºC<br>100<br>50 T J = 125ºC<br>80<br>40<br>60<br>30<br>40<br>20<br>10 20<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0<br>IC - Amperes VF - Volts<br>Siemens<br> -<br> - Amperes<br>g f s IF<br>**----- End of picture text -----**<br>


**Fig. 9. Gate Charge** 

**Fig. 10. Capacitance** 

**==> picture [524 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>100,000<br>14  VCE = 1000V f = 1 MHz<br> I C = 55A<br>12  I  G = 10mA<br>10,000<br>10 Cies<br>8 1,000<br>6 Coes<br>4 100<br>2 Cres<br>0 10<br>0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VCE - Volts<br> - Volts<br>GE<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br>


**Fig. 11. Reverse-Bias Safe Operating Area** 

**Fig. 12. Maximum Transient Thermal Impedance** 

**==> picture [526 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 1<br>100<br>80 0.1<br>60<br>40 0.01<br> T J = 125ºC<br>20  RG = 2Ω<br> dv / dt < 10V / ns<br>0 0.001<br>200 600 1000 1400 1800 2200 2600 3000 0.0001 0.001 0.01 0.1 1 10<br>VCE - Volts Pulse Width - Seconds<br> - Amperes  - ºC / W<br>IC (th)JC<br>Z<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

**IXBK55N300 IXBX55N300** 

**==> picture [538 x 637] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br> Junction Temperature  Collector Current<br>700 700<br> RG = 2Ω , VGE = 15V<br>600 600<br> VCE = 1250V<br>TJ = 125 º C<br>500 I C = 220A 500  RG = 2Ω , VGE = 15V<br> V CE = 1250V<br>400 400<br>I C = 110A TJ = 25ºC<br>300 300<br>200 200<br>25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 120 140 160 180 200 220<br>TJ - Degrees Centigrade IC - Amperes<br>Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br> Gate Resistance  Junction Temperature<br>320 300<br>720 120<br>700  t  TJr = 125 º C,  VGE t d(on) = 15V - - - - 110 310300  V  t  R CE fG = 2Ω,  V = 1250V       GE = 15V t d(off) - - - - 280260<br>680  VCE = 1250V        100<br>290 240<br>660 90<br>280 220<br>I C = 220A I C = 110A<br>640 80<br>270 200<br>620 70<br>260 I  C  = 220A 180<br>600 I C = 110A 60 250 160<br>580 50 240 140<br>560 40 230 120<br>2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br> Collector Current  Gate Resistance<br>380 320 360 680<br>360  t f t d(off) - - - -  300 340 t f td(off) - - - -  600<br>340  RG = 2Ω,  VGE = 15V 280  TJ = 125ºC,  VGE = 15V<br> V CE = 1250V       320  VCE = 1250V             520<br>320 260<br>I  C  = 110A<br>300 240 300 440<br>280 220 280 360<br>I  C = 220A<br>260 200<br>260 280<br>240 180<br>240 200<br>220 160<br>TJ = 125ºC, 25ºC<br>200 140 220 120<br>40 60 80 100 120 140 160 180 200 220 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>IC - Amperes RG - Ohms<br>t - Nanosecondsr t - Nanosecondsr<br> d(on)t  d(off)t<br> - Nanosecondsr  - Nanosecondsf<br>t t<br> - Nanoseconds  - Nanoseconds<br> d(off)t  d(off)t<br>t - Nanosecondsf t - Nanosecondsf<br> - Nanoseconds  - Nanoseconds<br>**----- End of picture text -----**<br>


© 2011 IXYS CORPORATION, All Rights Reserved 

**IXBK55N300 IXBX55N300** 

**==> picture [538 x 261] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 19. Forward-Bias Safe Operating Area  Fig. 20. Forward-Bias Safe Operating Area<br>@ TC = 25ºC @ TC = 75ºC<br>1000 1000<br>VCE(sat) Limit VCE(sat) Limit<br>100 100<br>25µs<br>100µs 25µs<br>10 10 100µs<br>1ms<br>1ms<br>1 1<br>10ms<br>0.1 T J = 150ºC 100ms 0.1 TJ = 150 º C 10ms<br>TC = 25ºC    DC TC = 75ºC 100ms<br>Single Pulse  Single Pulse  DC<br>0.01 0.01<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>VDS - Volts VDS - Volts<br> - Amperes  - Amperes<br>ID ID<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 

IXYS REF: B_55N300 (8T) 11-03-11-C 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

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---

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