# IGBT, 50 A, 2.7 V, 250 W, 3 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:3930404/)

**URL**: https://novapart.co/products/IXBH20N300/igbt-50-a-27-v-250-w-3-kv-to-247-pins
**SKU**: IXBH20N300
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €45.9800
**Stock**: 100+
**Lead Time**: 232 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 3kV |
| Collector Emitter Saturation Voltage | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930404/)

## **Not for New Design** 

**High Voltage, High Gain BIMOSFET[TM] Monolithic Bipolar MOS Transistor** 

## **IXBH20N300 IXBT20N300** 

**V =   3000V** CES **I =   20A** C110 **V**  **3.2V** CE(sat) 

|||||**TO-268**||||||
|---|---|---|---|---|---|---|---|---|---|
|**Symbol      Test Conditions**<br>**VCES**|**Symbol      Test Conditions**<br>TC= 25°C to 150°C                                                    3000|**Maximum Ratings**<br>= 25°C to 150°C                                                    3000|**Maximum Ratings**<br>V|**(IXBT)**||G|E<br>C(Tab)<br>~~2~~|||
|**VCGR**|TJ=  25°C to 150°C, RGE= 1M3000|3000|V|||||||
|**VGES**|Continuous<br>± 20|± 20|V|**TO-247**||||||
|**VGEM**|Transient<br>± 30|± 30|V|**(IXBH)**||||||
|**IC25**|TC= 25°C|50|A|||||||
|**IC110**|TC= 110°C|20|A|||||||
|**ICM**<br>**SSOA**<br>**(RBSOA)**|TC= 25°C, 1ms<br>VGE= 15V, TVJ= 125°C, RG= 20I<br>Clamped Inductive Load                                             1500                         V|140<br>ICM=  130<br>Clamped Inductive Load                                             1500                         V|A<br>A<br>Clamped Inductive Load                                             1500                         V|G<br>C|E|||C(Tab)||
|**PC**|TC= 25°C|250|W|G  = Gate           C      =  Collector|G  = Gate           C      =  Collector|G  = Gate           C      =  Collector|G  = Gate           C      =  Collector|G  = Gate           C      =  Collector|G  = Gate           C      =  Collector|
|||||E  = Emiiter       Tab   =  Collector||E  = Emiiter       Tab   =  Collector||E  = Emiiter       Tab   =  Collector||
|**TJ**|-55 ... +150|-55 ... +150|°C|||||||
|**TJM**||150|°C|||||||
|**Tstg**|-55 ... +150|-55 ... +150|°C|||||||
|**TL**Maximum Lead Temperature for Soldering                   300|Maximum Lead Temperature for Soldering                   300||°C|||||||
|**TSOLD**|Plastic Body for 10 seconds|260|°C|**Features**||||||
|**Md**|Mounting Torque (TO-247)                                     1.13/10|Mounting Torque (TO-247)                                     1.13/10<br>Nm/lb.in.|Nm/lb.in.|||||||
|**Weight**|TO-268|4|g|High Blocking Voltage||||||
||TO-247|6|g|Anti-Parallel Diode|Anti-Parallel Diode|Anti-Parallel Diode|Anti-Parallel Diode|Anti-Parallel Diode||



- Anti-Parallel Diode 

- International Standard Packages 

- Low Conduction Losses 

|**Symbol   Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**||
|---|---|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**|**Min.          Typ.         Max.**||
|**BVCES**<br>IC= 250µA, VGE= 0V                                  3000<br>**VGE(th)**<br>IC= 250µA, VCE= VGE2.5                             5.0<br>**ICES**<br>VCE= 0.8 • VCES, VGE= 0V<br>T<br>**IGES**<br>VCE= 0V, VGE= ± 20V<br>**VCE(sat)**<br>IC= 20A, VGE= 15V, Note 1                                           2.7            3.2<br>T|= 0V                                  3000<br>2.5                             5.0<br>TJ= 125°C<br>= 15V, Note 1                                           2.7            3.2<br>TJ= 125°C<br>3.2                        V|2.5                             5.0<br>35<br>1.5   mA<br>= 15V, Note 1                                           2.7            3.2<br>3.2                        V<br>~~po~~<br>~~|a~~<br>~~|_~~||2.5                             5.0<br>35<br>1.5   mA<br>±100   nA<br>= 15V, Note 1                                           2.7            3.2<br>3.2                        V|V<br>V<br>µA<br>1.5   mA<br>±100   nA<br>V<br>3.2                        V|



## **Advantages** 

- Low Gate Drive Requirement 

- High Power Density 

## **Applications:** 

- Switch-Mode and Resonant-Mode Power Supplies 

- Uninterruptible Power Supplies (UPS) 

- Laser Generators 

- Capacitor Discharge Circuits 

- AC Switches 

© 2021 Littelfuse, Inc. 

DS100124B(6/21) 

## **Not for New Design** 

## **IXBH20N300 IXBT20N300** 

|**Not for New Design**|**Not for New Design**|**Not for New Design**|**Not for New Design**|
|---|---|---|---|
|**Symbol Test Conditions**<br> **Characteristic Values**||||
|(TJ= 25°C Unless Otherwise Specified)<br> **Min.**||**Typ.**<br>|**Max.**|
|**gfS**<br>IC= 20A, VCE= 10V, Note 1                        11||18|S|
|**Cies**<br> <br>**Coes**<br>VCE= 25V, VGE= 0V, f = 1MHz<br>**Cres**<br>||2230<br>92<br>33|pF<br>pF<br>pF|
|**Qg**<br> <br>**Qge**<br>IC= 20A, VGE= 15V, VCE= 1000V<br>**Qgc**<br>||105<br>13<br>45|nC<br>nC<br>nC|
|**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times, TJ = 25°C**<br>IC= 20A, VGE= 15V<br>VCE= 1250V, RG= 10||64<br>210<br>300<br>504|ns<br>ns<br>ns<br>ns|
|**td(on)**<br>**tr**<br>**td(off)**<br>**tf**|<br> <br> <br>**Resistive Switching Times, TJ = 125°C**<br>IC= 20A, VGE= 15V<br>VCE= 1250V, RG= 10|68<br>540<br>300<br>395|ns<br>ns<br>ns<br>ns|
|||||
|**RthJC**<br>**RthCS**<br>(TO-247)||0.21|0.50   °C/W<br>°C/W|



## **Reverse Diode** 

|**Symbol   Test Conditions**<br>**Characteristic Values**<br>°|**Symbol   Test Conditions**<br>**Characteristic Values**<br>°|**Symbol   Test Conditions**<br>**Characteristic Values**<br>°|
|---|---|---|
|(TJ= 25C Unless Otherwise Specified)**Min.**|**Typ.**|**Max.**|
|**VF**<br>IF= 20A, VGE= 0V||2.1 V|
|**trr**<br> <br>**IRM**<br>IF= 10A, VGE= 0V, -diF/dt = 100A/µs<br>VR= 100V, VGE= 0V|1.35<br>30|µs<br>A|



Note       1:   Pulse test, t  300µs, duty cycle, d  2%. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

**IXBH20N300 Not for New Design IXBT20N300** 

**Fig. 1. Output Characteristics @ TJ = 25ºC** 

**==> picture [255 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>35 VGE = 25V20V<br>15V<br>30<br>25<br>20 10V<br>15<br>10<br>5<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


**Fig. 3. Output Characteristics @ TJ = 125ºC** 

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**----- Start of picture text -----**<br>
40<br>VGE = 25V<br>20V<br>35<br>15V<br>30<br>25<br>20<br>10V<br>15<br>10<br>5 5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


**Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage** 

**==> picture [255 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.5<br>5.0 TJ = 25ºC<br>4.5<br>4.0<br>I  C = 40A<br>3.5<br>3.0<br>20A<br>2.5<br>2.0 10A<br>1.5<br>5 7 9 11 13 15 17 19 21 23 25<br>VGE - Volts<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>300<br>250 VGE = 25V<br>20V<br>200<br>15V<br>150<br>100<br>10V<br>50<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VCE - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Junction Temperature<br>1.8<br>VGE = 15V<br>1.6<br>I  C = 40A<br>1.4<br>1.2 I  C = 20A<br>1.0<br>I  C = 10A<br>0.8<br>0.6<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Input Admittance<br>50<br>45<br>40<br>35<br>30<br>25<br>20 TJ = 125ºC<br>25ºC<br>- 40ºC<br>15<br>10<br>5<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>VGE - Volts<br>Amperes<br> -<br>IC<br> - Normalized<br>CE(sat)<br>V<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. 

**IXBH20N300 Not for New Design IXBT20N300** 

**==> picture [532 x 637] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>28 60<br>TJ = - 40ºC<br>24 50<br>20 25ºC<br>40<br>125ºC<br>16<br>30 TJ = 25ºC<br>12<br>TJ = 125ºC<br>20<br>8<br>4 10<br>0 0<br>0 5 10 15 20 25 30 35 40 45 50 55 0 0.5 1 1.5 2 2.5 3<br>IC - Amperes VF - Volts<br>Fig. 9. Gate Charge Fig. 10. Capacitance<br>16 10,000<br>14 VCE = 1kVCE = 1kV = 1kV f = 1 MHz<br>I C C = 20A<br>I G = 10mA      G = 10mA      = 10mA<br>12<br>Cies<br>1,000<br>10<br>8<br>6 Coes<br>100<br>4<br>2<br>Cres<br>0 10<br>0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs VCE - Volts<br>Fig. 12. Maximum Transient Thermal Impedance<br>Fig. 11. Reverse-Bias Safe Operating Area<br>1<br>140<br>120<br>100<br>80<br>0.1<br>60<br>40 TJJ = 125ºC<br>RGG = 20Ω<br>dv / dt < 10V / ns<br>20<br>0 0.01<br>250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VCE -CE - - Volts Pulse Width - Seconds<br>Siemens<br> -<br>gf s  - AmperesIF<br> - Volts<br>GE<br>V<br>Capacitance - PicoFarads<br> - K / W<br> - Amperes (th)JC<br>ICC Z<br>**----- End of picture text -----**<br>


**==> picture [257 x 396] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>VCE = 1kVCE = 1kV = 1kV<br>14<br>I C C = 20A<br>I G = 10mA      G = 10mA      = 10mA<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110<br>QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br>Fig. 11. Reverse-Bias Safe Operating Area<br>140<br>120<br>100<br>80<br>60<br>40 TJJ = 125ºC<br>RGG = 20Ω<br>dv / dt < 10V / ns<br>20<br>0<br>250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000<br>VCE -CE - - Volts<br> - Volts<br>GE<br>V<br> - Amperes<br>ICC<br>**----- End of picture text -----**<br>


Littelfuse reserves the right to change limits, test conditions and dimensions. 

## **IXBH20N300 IXBT20N300** 

## **Not for New Design** 

**==> picture [529 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.<br>Junction Temperature Collector Current<br>700 700<br>600 RVGCE = 10Ω , V = 1250VGE = 15V 600 RVGCE = 10Ω , V = 1250V  GE = 15V<br>500 500 TJ = 125ºC<br>400 I  C = 20A 400<br>300 300<br>I  C = 40A<br>200 200<br>TJ = 25ºC<br>100 100<br>0 0<br>25 35 45 55 65 75 85 95 105 115 125 10 15 20 25 30 35 40<br>TJ - Degrees Centigrade IC - Amperes<br>Nanoseconds Nanoseconds<br>t - r t - r<br>**----- End of picture text -----**<br>


**==> picture [537 x 424] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.<br>Gate Resistance Junction Temperature<br>850 200 700 350<br>800750 TVt rJCE= 125ºC,  V = 1250V       td(on)GE = 15V 180160 600 RVt fGCE= 10Ω,  V = 1250V       tGEd(off)= 15V 330<br>700 140 500 I C = 20A 310<br>650 I C = 20A, 40A 120 400 290<br>600 100<br>300 270<br>550 80<br>200 250<br>500 60 I C = 40A<br>450 40 100 230<br>10 20 30 40 50 60 70 80 25 35 45 55 65 75 85 95 105 115 125<br>RG - Ohms TJ - Degrees Centigrade<br>Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.<br>Collector Current Gate Resistance<br>1200 460 600 1600<br>t f td(off) 550 t f td(off) 1400<br>1000 RG = 10Ω,  VGE = 15V 420 TJ = 125ºC,  VGE = 15V<br>VCE = 1250V       500 VCE = 1250V             1200<br>800 380<br>450 1000<br>600 340 400 800<br>I  C = 20A<br>350 600<br>400 300<br>300 I C = 40A 400<br>200 260<br>250 200<br>TJ = 125ºC, 25ºC<br>0 220 200 0<br>10 15 20 25 30 35 40 10 20 30 40 50 60 70 80<br>IC - Amperes RG - Ohms<br> d(on)t  d(off)t<br>-<br>t- Nanoseconds r t - Nanoseconds f<br>- Nanoseconds Nanoseconds<br> - Nanoseconds  d(off)t - Nanoseconds  d(off)t<br>t f t f<br>- Nanoseconds - Nanoseconds<br>**----- End of picture text -----**<br>


© 2021 Littelfuse, Inc. 

IXYS REF: B_20N300 (5P) 2-16-21-C 

## **Not for New Design** 

## **IXBH20N300 IXBT20N300** 

**==> picture [201 x 449] intentionally omitted <==**

**----- Start of picture text -----**<br>
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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

Littelfuse reserves the right to change limits, test conditions and dimensions. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXBH20N300/igbt-50-a-27-v-250-w-3-kv-to-247-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixbh20n300/transistor-3kv-50a-to-247/dp/3930404)
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