# IGBT, 16 A, 6 V, 150 W, 1.7 kV, TO-247AD, 3 Pins

![Product image](https://novapart.co/image/farnell:3930402/)

**URL**: https://novapart.co/products/IXBH16N170A/igbt-16-a-6-v-150-w-17-kv-to-247ad-3-pins
**SKU**: IXBH16N170A
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €8.7900
**Stock**: 200+
**Lead Time**: 267 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 16A |
| Collector Emitter Voltage Max | 1.7kV |
| Collector Emitter Saturation Voltage | 6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930402/)

Advanced Technical Information 

**High Voltage, High Gain BIMOSFET[TM] Monolithic Bipolar MOS Transistor** 

|**High Voltage, High Gain**|**High Voltage, High Gain**|||||||||
|---|---|---|---|---|---|---|---|---|---|
|**High Voltage, High Gain**||**IXBH 16N170A**|**IXBH 16N170A**|||**V**CES<br>**= 1700 V**||||
|**BIMOSFET[TM] Monolithic**<br>**Bipolar MOS Transistor**||**IXBT 16N170A**|**IXBT 16N170A**|||**I**C25<br>**=**<br>**16 A**<br>**V**CE(sat) **=**<br>**6.0 V**||||
|||||||**t**fi(typ)<br>**=**<br>**50 ns**||||
||||||E|||||
|**Symbol**|**Test Conditions**||**Maximum Ratings**|||**TO-268**||||
|**VCES**|TJ = 25 C to 150 C|||1700|V|**(IXBT)**||||
|**VCGR**|TJ = 25 C to 150 C; RGE= 1 M|||1700|V|G||||
|**VGES**|Continuous|||20|V|E||||
|**VGEM**<br>Transient<br>30<br>V<br>co||||||||||
|**IC25**|TC = 25 C|||16|A|**TO-247 AD (IXBH)**||||
|**IC90**|TC = 90 C|||10|A|||||
|**ICM**|TC = 25 C, 1 ms|||40|A|||||
|**SSOA**<br>**(RBSOA)**<br>**tSC**|VGE= 15 V, TVJ= 125 C, RG= 33<br>Clamped inductive load<br>VGE= 15 V, VCES= 1200V, TJ= 125 C|ICM<br>VCES=|CM=<br>=|40<br>1350|A<br>V|G<br>C E|||C (TAB)|
|**(SCSOA)**|RG= 33<br>non repetitive<br>Q|Q|Q|10<br>Q|s<br>Qu|G = Gate,<br>C = Collector,<br>u|u|u|u|
|**PC**|TC = 25 C|||150|W|E = Emitter,<br>TAB = Collector||||
|**TJ**||-55 ... +150|||C|**Features**||||
|**TJM**||||150|C|• Monolithic fast reverse diode||||
|**Tstg**||-55 ... +150|||C|• High Blocking Voltage||||
|Maximum Lead temperature for soldering<br>1.6 mm (0.062 in.) from case for 10 s||||300|C|• JEDEC TO-268 surface mount and<br>JEDEC TO-247 AD packages|||JEDEC TO-268 surface mount and|
|Maximum tab temperature for soldering SMD devices for 10 s|Maximum tab temperature for soldering SMD devices for 10 s|||260|C|• Low switching losses||||
|**Md**|Mounting torque (M3) (TO-247)|||1.13/10 Nm/lb.in.|1.13/10 Nm/lb.in.|• High current handling capability<br>• MOS Gate turn-on||||
|**Weight**|TO-247<br>TO-268|||6<br>4|g<br>g|- drive simplicity<br>• Molding epoxies meet UL 94 V-0||||
|||||||flammability classification||||



## **Applications** 

||||||||**Applications**|
|---|---|---|---|---|---|---|---|
|**Symbol**|**Test Conditions**||**Characteristic Values**||||**Applications**|
||||(TJ= 25 C, unless otherwise specified)||||• AC motor speed control|
||||**min.**|**typ.**|**max.**||• Uninterruptible power supplies (UPS)|
||||||||• Switched-mode and resonant-mode|
|**BVCES**|IC|= 250 A, VGE= 0 V<br>1700<br>V<br>y|||||power supplies|
|**VGE(th)**|IC|= 250 A, VCE= VGE<br>yu|2.5||5.5|V|• Capacitor discharge circuits|
|**ICES**|VCE <br>VGE|= 0.8 VCES<br> = 0 V; Note 1|TJ= 125 C<br>;||50<br>1.5|A<br>mA<br>Ht|**Advantages**|
||||||||• Lower conduction losses than MOSFETs|
|**IGES**|VCE|= 0 V, VGE= 20 V<br>+|||100<br>+|nA|• High power density|
|**VCE(sat)**|IC<br>= IC90, VGE= 15 V<br>Note 2||TJ= 125 C|5.0|6.0|V<br>V|• Suitable for surface mounting<br>• Easy to mount with 1 screw,<br>(isolated mounting screw hole)|



- Easy to mount with 1 screw, (isolated mounting screw hole) 

98707 (02/23/00) 

IXYS reserves the right to change limits, test conditions, and dimensions. 

© 2000 IXYS All rights reserved 

1 - 2 

**IXBH 16N170A IXBT 16N170A** 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Symbol|Test Conditions|Characteristic Values|
|(TJ = 25|°|C, unless otherwise specified)|TO-247 AD Outline|
|min.|typ.|max.|;|
|gfs|IC|= IC90; VCE = 10 V,|8|12.5|S|
|Pulse test, t|300|s, duty cycle|2 %|
|<|MW|s|a|i|B|
|Cies|1400|pF|
|Coes|1|VCE|= 25 V, VGE = 0 V, f = 1 MHz|90|pF|mit|
|Cres|31|pF|
|Q|65|nC|
|g|
|Qge|IC|= IC90, VGE = 15 V, VCE = 0.5 VCES|13|nC|
|Q|22|nC|
|gc|
|td(on)|Inductive load, TJ = 25|C|15|ns|Dim.|Millimeter|Inches|
|ttri|\|IVCCE|= I= 0.8 VC90, VCESGE = 15 V, RG = Roff = 10|[Q]|16025|250|nsns|AB|19.8120.80Min.|20.3221.46Max.|0.7800.819Min.|0.8000.845Max.|
|td(off)fi|Remarks: Switching times mayincrease for VCE (Clamp) > 0.8 • VCES,|50|100|ns|CD|15.753.55|16.263.65|0.6100.140|0.6400.144|
|Eoff|higher TJ or increased RG|1.2|2.5|mJ|E|4.32|5.49|0.170|0.216|
|F|5.4|6.2|0.212|0.244|
|ttd(on)ri|Inductive load, T|IC|= IC90, VGE = 15 V|J = 125|°|C|1528|nsns|GHJ|1.651.0-|2.134.51.4|-0.0400.065|0.1770.0550.084|
|Eon|VCE|= 0.8 VCES, RG = Roff = 10|2.0|mJ|K|10.8|11.0|0.426|0.433|
|td(off)|220|ns|L|4.7|5.3|0.185|0.209|
|Remarks: Switching times may|M|0.4|0.8|0.016|0.031|
|tfi|increase for VCE (Clamp) > 0.8 • VCES,|150|ns|N|1.5|2.49|0.087|0.102|
|Eoff|higher TJ or increased RG|2.6|mJ|
|RthJC|0.83|K/W|TO-268AA (D|[3]|PAK)|
|RthCK|(TO-247)|0.25|K/W|
|Reverse Diode|Characteristic Values|
|aa|an|
|(TJ = 25|C, unless otherwise specified)|
|Symbol|Test Conditions|min.|typ.|max.|u|tae|ma|i]|i]|
|VF|IF|= IC90, VGE = 0 V, Pulse test,|5.0|V|
|t|<|300 us, duty cycle d <|2%|
|IRM|IF|= IC90, VGE = 0 V, -diF/dt = 50 A/us|10|A|
|trr|}|vR|-|= 100V|-|360|ns|Sli “|
|niin|"AL|
|Notes:|Dim.|Millimeter|Inches|
|1.|Device must be heatsunk for high|Min.|Max.|Min.|Max.|
|temperature leakage current|Min. Recommended Footprint|A|4.9|5.1|.193|.201|
|measurements to avoid thermal|A1|2.7|2.9|.106|.114|
|2.|runaway.Pulse test, t  300 s, duty cycle  2 %.|<|b|<|r-|0.653|[16.59] ma|Abb22|1.15.021.9|1.452.1.25|.045.001.75|.057.010.83|
|C|.4|.65|.016|.026|
|||=I|
|D|13.80|14.00|.543|.551|
|E|15.85|16.05|.624|.632|
|E1|13.3|13.6|.524|.535|
|e          5.45 BSC|.215 BSC|
|H|18.70|19.10|.736|.752|
|L|2.40|2.70|.094|.106|
|L1|1.20|1.40|.047|.055|
|-fHeS|L2|1.00|1.15|.039|.045|
|L3         0.25 BSC|.010 BSC|
|a|[=|" _|[3.00]|L4|3.80|4.10|.150|.161|
|© 2000 IXYS All rights reserved|IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,592|4,881,106|5,017,508|5,049,961|5,187,117|5,486,715|2 - 2|
|4,850,072|4,931,844|5,034,796|5,063,307|5,237,481|5,381,025|

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Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



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- [Supplier page](https://es.farnell.com/littelfuse/ixbh16n170a/transistor-1-7kv-16a-to-247ad/dp/3930402)
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