# IGBT, 45 A, 2.9 V, 230 W, 3.6 kV, ISOPLUS i4-PAK, 3 Pins

![Product image](https://novapart.co/image/farnell:3930307/)

**URL**: https://novapart.co/products/IXBF20N360/igbt-45-a-29-v-230-w-36-kv-isoplus-i4-pak-3-pins
**SKU**: IXBF20N360
**Manufacturer**: LITTELFUSE
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €49.1700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | To Be Advised |
| No. Of Pins | 3Pins |
| Product Range | BiMOSFET Series |
| Power Dissipation | 230W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | ISOPLUS i4-PAK |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 45A |
| Collector Emitter Voltage Max | 3.6kV |
| Collector Emitter Saturation Voltage | 2.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3930307/)

## Preliminary Technical Information [C1 

**High Voltage, High Frequency, BiMOSFET[TM] Monolithic Bipolar MOS Transistor** 

## **IXBF20N360** 

**V =   3600V** CES **I =   18A** C110 **V  3.4V** CE(sat) 

## **(Electrically Isolated Tab)** 

## **ISOPLUS i4-Pak[TM]** 

|**Symbol      Test Conditions**|**Symbol      Test Conditions**|**Maximum Ratings**||
|---|---|---|---|
|**VCES**<br>TJ= 25°C to 150°C                                                     3600<br>V<br>**VCGR**<br>TJ=  25°C to 150°C, RGE= 1M 3600<br>V<br>**VGES**<br>Continuous<br>± 20<br>V<br>**VGEM**<br>Transient<br>± 30<br>V<br>~~ee~~||||
|**IC25**|TC= 25°C|45|A|
|**IC110**|TC= 110°C|18|A|
|**ICM**|TC = 25°C, 1ms|220|A|
|**SSOA**|VGE= 15V, TVJ= 125°C, RG= 10|ICM=  160|A|
|**(RBSOA)**|Clamped Inductive Load                                  V|Clamped Inductive Load                                  VCES 1500                          V|1500                          V|
|**TSC**V|VGE= 15V, TJ= 125°C,|||
|**(SCSOA)**R|RG= 52, VCE= 1500V, Non-Repetitive                      10                        μs|1500V, Non-Repetitive                      10                        μs|1500V, Non-Repetitive                      10                        μs|
|**PC**|TC= 25°C|230|W|
|**TJ**|-55 ... +150|-55 ... +150<br>°C|°C|
|**TJM**||150<br>°C|°C|
|**Tstg**<br>**TL**|-55 ... +150<br>°C<br>Maximum Lead Temperature for Soldering                300                        °C||°C<br>Maximum Lead Temperature for Soldering                300                        °C|
|**TSOLD**Plastic Body for 10s                                                     260                        °C|Plastic Body for 10s                                                     260                        °C|Plastic Body for 10s                                                     260                        °C|Plastic Body for 10s                                                     260                        °C|
|**FC**|Mounting Force with Clip                          20..120 / 4.5..27||N/lb|
|**VISOL**|50/60Hz**,**5 Seconds                                                  4000|5 Seconds                                                  4000|V~|
|**Weight**||8|g|



**==> picture [136 x 57] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>2<br>Isolated Tab<br>5<br>1 = Gate 5 = Collector<br>2 = Emitter<br>**----- End of picture text -----**<br>


## **Features** 

- Silicon Chip on Direct-Copper Bond (DCB) Substrate 

- Isolated Mounting Surface 

- 4000V~ Electrical Isolation 

- High Blocking Voltage 

- High Frequency Operation 

## **Advantages** 

- Low Gate Drive Requirement 

- High Power Density 

|(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.        Max.**<br>~~|~~|**Min.         Typ.        Max.**<br>~~|~~|**Min.         Typ.        Max.**|
|---|---|---|
|**BVCES**<br>IC= 250μA, VGE= 0V<br>3600                                  V<br>~~|~~|3600                                  V<br>~~|~~|3600                                  V|
|**VGE(th)**<br>IC= 250μA, VCE= VGE<br>3.0<br>~~|~~|~~||~~|5.0<br>V|
|**ICES**<br>VCE= 3000V, VGE= 0V<br>Note 2, TJ= 125°C<br><br>~~|~~|25   μA<br>125                  μA<br>~~|~~<br>~~-~~<br>~~|~~|25   μA<br>125                  μA|
|**IGES**<br>VCE= 0V, VGE= ± 20V<br>~~|~~|~~|~~|±200   nA|
|**VCE(SAT)**<br>IC= 20A, VGE= 15V, Note 1<br>TJ= 125°C<br>3.6                       V<br>~~|~~|2.9           3.4       V<br>3.6                       V<br>~~|=~~|2.9           3.4       V<br>3.6                       V|



## **Applications** 

- Switch-Mode and Resonant-Mode Power Supplies 

- Uninterruptible Power Supplies 

- (UPS) 

- Laser Generators 

- Capacitor Discharge Circuits 

- AC Switches 

© 2013 IXYS CORPORATION,  All Rights Reserved 

DS100567A(12/13) 

## **IXBF20N360** 

|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|(T= 25°C Unless Otherwise Specified)<br>**Min.       Typ.        Max.**|**Typ.        Max.**|**Typ.        Max.**|
|---|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)<br>**Min.        Typ.        Max.**||**Typ.        Max.**|**Typ.        Max.**|
|**gfs**IC= 20A, VCE= 10V, Note 1                            10                17||= 10V, Note 1                            10                17<br>~~—~~|S|
|**Cies**<br>2045<br>**Coes**VCE= 25V, VGE= 0V, f = 1MHz<br>110<br>**Cres**<br>50||2045<br>110<br>50|pF<br>pF<br>pF|
|||||
|**Qg(on)**<br>**Qge**I<br>**Qgc**|110<br>IC= 20A, VGE= 15V, VCE= 1000V<br>13<br>43|110<br>13<br>43|nC<br>nC<br>nC|
|**td(on)**<br>18<br>**tri**<br>14<br>**Eon**<br>15.50<br>**td(off)**<br>238<br>**tfi**<br>206<br>**Eoff**<br>4.30            mJ<br>**Inductive load, TJ = 25°C**<br>IC= 20A, VGE= 15V<br>VCE= 1500V, RG= 10<br>Note 3<br>|||18<br>14<br>15.50<br>238<br>206<br>4.30            mJ<br>7|ns<br>ns<br>mJ<br>ns<br>ns<br>4.30            mJ|
|**t**<br>20||20||
|**td(on)**<br>**tri**<br>**Eon**<br>**td(off)**<br>**tfi**<br>**Eoff**|20<br>22<br>16.10<br>247<br>216<br>4.15<br>**Inductive load, TJ = 125°C**<br>IC= 20A, VGE= 15V<br>VCE= 1500V, RG= 10<br>Note 3|20<br>22<br>16.10<br>247<br>216<br>4.15|ns<br>ns<br>mJ<br>ns<br>ns<br>mJ|
|||||
|**td(on)**<br>30<br>**tr**<br>325<br>**td(off)**<br>165<br>**tf**<br>1045<br>**Resistive load, TJ = 25°C**<br>IC= 20A, VGE= 15V<br>VCE= 960V, RG= 10<br>|||30<br>325<br>165<br>1045<br>7|ns<br>ns<br>ns<br>ns|
|**td(on)**<br>32<br>**tr**<br>890<br>**td(off)**<br>185<br>**tf**<br>1100<br>**Resistive load, TJ = 125°C**<br>IC= 20A, VGE= 15V<br>VCE= 960V, RG= 10<br>|||32<br>890<br>185<br>1100<br>7|ns<br>ns<br>ns<br>ns|
|**RthJC**<br>**RthCS**<br>0.15||0.54 °C/W<br>0.15|0.54 °C/W<br>°C/W|



|(T= 25°C Unless Otherwise Specified)**Min.         Typ.         Max**|**Min.         Typ.         Max**|**Min.         Typ.         Max**|
|---|---|---|
|(TJ= 25°C Unless Otherwise Specified)**Min.         Typ.         Max**|**Min.         Typ.         Max**|**Min.         Typ.         Max**|
|**VF**<br>IF= 20A, VGE= 0V, Note 1|3.5   V|3.5   V|
|**trr**<br>1.7                 μs<br>**IRM**35<br>**QRM**<br>30                    μC<br>IF= 10A, VGE= 0V, -diF/dt = 100A/μs<br>VR= 100V, VGE= 0V|1.7                 μs<br>35 <br>30                    μC|1.7                 μs<br> A<br>30                    μC|



## **PRELIMANARY TECHNICAL INFORMATION** 

The product presented herein is under development.  The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result.  IXYS reserves the right to change limits, test conditions, and dimensions without notice. 

Notes: 

1.  Pulse test, t  300μs, duty cycle, d  2%. 

2.  Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. 

3.  Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS MOSFETs  and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2    7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 

## **IXBF20N360** 

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**----- Start of picture text -----**<br>
Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC<br>40<br>VGE = 25V 240 V GE = 25V 17V<br>35           19V            21V<br>          15V            19V<br>30           13V         11V 9V 200 15V<br>25 160<br>13V<br>20<br>120<br>15 11V<br>7V<br>80<br>10<br>9V<br>5 40<br>0 6V 0 7V<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 25<br>VCE - Volts VCE - VoltsCE - Volts - Volts<br> - Amperes Amperes -  -<br>IC ICC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
240 V GE = 25V 17V<br>           21V<br>           19V<br>200 15V<br>160<br>13V<br>120<br>11V<br>80<br>9V<br>40<br>7V<br>0<br>0 5 10 15 20 25 30<br>VCE - VoltsCE - Volts - Volts<br>Fig. 4. Dependence of VCE(sat) on<br>Junction Temperature<br>1.7<br>1.6 V GE = 15V<br>1.5<br>1.4 I C = 40A<br>1.3<br>1.2 I  C  = 20A<br>1.1<br>1.0<br>I  C  = 10A<br>0.9<br>0.8<br>0.7<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br>Fig. 6. Input Admittance<br>60<br>50<br>40<br>30<br>20<br>TJ  =125ºC<br>          25ºC<br>        - 40ºC<br>10<br>0<br>3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5<br>VGE - Volts<br>Amperes -  -<br>ICC<br> - Normalized<br>CE(sat)<br>V<br>Amperes<br> -<br>IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 3. Output Characteristics @ TJ = 125ºC<br>40<br>VGE = 25V<br>35           21V<br>          17V<br>          15V<br>30           13V<br>         11V 9V<br>25<br>20<br>15 7V<br>10<br>6V<br>5<br>5V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5<br>VCE - Volts<br>Fig. 5. Collector-to-Emitter Voltage<br>vs. Gate-to-Emitter Voltage<br>8<br>TJ  = 25ºC<br>7<br>6<br>5<br>4 I C = 40A<br>20A<br>3<br>10A<br>2<br>6 7 8 9 10 11 12 13 14 15<br>VGE - Volts<br> - Amperes<br>IC<br> - Volts<br>CE<br>V<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXBF20N360** 

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**----- Start of picture text -----**<br>
Fig. 7. Transconductance Fig. 8. Gate Charge<br>30 16<br>T J = - 40ºC 14  VCE = 1000V<br>25  I C = 20A<br>12  I G = 10mA<br>25ºC<br>20<br>10<br>125ºC<br>15 8<br>6<br>10<br>4<br>5<br>2<br>0 0<br>0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 90 100 110<br>IC - Amperes QG - NanoCoulombs<br>Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance<br>60 10,000<br>TJ  = 25ºC J f = 1 MHz<br>50        125ºC<br>Cies<br>40 1,000<br>30<br>VGE = 0V<br>Coes<br>20 100<br>10 V GE = 15V  Cres<br>0 10<br>0.5 1 1.5 2 2.5 3 3.5 4 0 5 10 15 20 25 30 35 40<br>VF - Volts VCE - Volts<br>Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance<br>180 1<br>160<br>140<br>120<br>100<br>0.1<br>80<br>60<br>40 TJ = 125 º C<br>RG = 10Ω<br>20 dv / dt < 10V / ns<br>0 0.01<br>200 600 1000 1400 1800 2200 2600 3000 3400 0.0001 0.001 0.01 0.1 1 10<br>VCE - Volts Pulse Width - Seconds<br>Siemens  - Volts<br> -  GE<br> f s V<br>g<br> - Amperes<br>IF<br>Capacitance - PicoFarads<br> - ºC / W<br> - Amperes<br>IC Z(th)JC<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

**IXBF20N360** 

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**----- Start of picture text -----**<br>
Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC<br>1000<br>VCE(sat) Limit<br>100<br>10<br>25µs<br>100µs<br>1<br>1ms<br>0.1 T J = 150ºC<br>TC = 25ºC 10ms<br>Single Pulse<br>100ms<br>DC<br>0.01<br>1 10 100 1,000 10,000<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000<br>VCE(sat) Limit<br>100<br>10<br>25µs<br>100µs<br>1<br>1ms<br>0.1 TJ = 150 º C<br>TC = 75ºC<br>10ms<br>Single Pulse<br>DC 100ms<br>0.01<br>1 10 100 1,000 10,000<br>VCE - Volts<br> - Amperes<br>IC<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 15. Inductive Switching Energy Loss vs. Fig. 16. Inductive Switching Energy Loss vs.<br> Gate Resistance  Collector Current<br>18 46 14 56<br>16  E off        E on  - - - - 42  Eoff       Eon  - - - -<br>12 48<br> TJ = 125ºC ,  VGE = 15V  TJ = 125ºC ,  VGE = 15V<br>14  V CE  = 1500V         38  VCE = 1500V<br>10 40<br>12 34<br>I C = 40A<br>10 30 8 TJ = 125ºC 32<br>8 26<br>6 24<br>6 22 TJ = 25ºC<br>4 16<br>4 18<br>2 I C = 20A 14 2 8<br>0 10 0 0<br>10 15 20 25 30 35 40 45 50 10 15 20 25 30 35 40<br>RG - Ohms IC - Amperes<br>Fig. 17. Inductive Switching Energy Loss vs. Fig. 18. Inductive Turn-off Switching Times vs.<br> Junction Temperature  Gate Resistance<br>16 40 420 900<br>14  Eoff      Eon  - - - - 36 380 t f i t  d(off) - - - - 800<br> RG = 10Ω ,  VGE = 15V  TJ = 125 º C,  VGE = 15V<br>12  V CE  = 1500V         32 340 VCE = 1500V        700<br>10 I C = 40A 28 300 600<br>8 24 260 I C = 40A 500<br>I C = 20A<br>6 20 220 400<br>4 16 180 300<br>I C = 20A<br>2 12 140 200<br>0 8 100 100<br>25 35 45 55 65 75 85 95 105 115 125 10 15 20 25 30 35 40 45 50<br>TJ - Degrees Centigrade RG - Ohms<br>E<br>on<br> - MilliJoules<br>off<br>E  - MilliJoules Eoff - MilliJoules Eon - MilliJoules<br>t<br> - Nanoseconds d(off)<br>Eoff - MilliJoules Eon - MilliJoules tf i<br> - Nanoseconds<br>**----- End of picture text -----**<br>


© 2013 IXYS CORPORATION,  All Rights Reserved 

## **IXBF20N360** 

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**----- Start of picture text -----**<br>
Fig. 19. Inductive Turn-off Switching Times vs.<br>Collector Current<br>400 280<br>360 t f i t d(off) - - - - 270<br> R G = 10Ω ,  V GE = 15V<br>320  VCE = 1500V            260<br>280 250<br>TJ = 125ºC<br>240 240<br>200 230<br>TJ = 25ºC<br>160 220<br>120 210<br>80 200<br>10 15 20 25 30 35 40<br>IC - Amperes<br>t<br>d(off)<br> - Nanoseconds<br>f i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 21. Inductive Turn-on Switching Times vs. Gate Resistance** 

**==> picture [253 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 70<br>t r i t d(on) - - - -<br>100 60<br> TJ = 125ºC,  VGE = 15V<br> V CE  = 1500V<br>80 50<br>I C = 40A<br>60 40<br>40 30<br>I C = 20A<br>20 20<br>0 10<br>10 15 20 25 30 35 40 45 50<br>RG - Ohms<br>t<br> - Nanoseconds d(on)<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


## **Fig. 23. Inductive Turn-on Switching Times vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
70 31<br>60 t r i t d(on) - - - -   28<br> RG = 10Ω ,  VGE = 15V<br>50  VCE = 1500V  IC = 40A 25<br>40 22<br>30 19<br>I C  = 20A<br>20 16<br>10 13<br>0 10<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>t<br> - Nanoseconds d(on)<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Fig. 20. Inductive Turn-off Switching Times vs.<br>Junction Temperature<br>400 280<br>360 t f i    t d(off) - - - - 270<br> RG = 10Ω ,  VGE = 15V<br> VCE = 1500V<br>320 260<br>I C = 40A<br>280 250<br>240 240<br>I C = 20A<br>200 230<br>160 220<br>I C = 40A<br>120 210<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>t<br> - Nanoseconds d(off)<br>f i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


**Fig. 22. Inductive Turn-on Switching Times vs. Collector Current** 

**==> picture [255 x 184] intentionally omitted <==**

**----- Start of picture text -----**<br>
60 34<br>t r i t d(on) - - - -<br>50  R G  = 10Ω ,  V GE  = 15V 30<br> VCE = 1500V<br>40 26<br>30 T J  = 125ºC 22<br>20 18<br>TJ = 25ºC<br>10 14<br>0 10<br>10 15 20 25 30 35 40<br>IC - Amperes<br>t<br> - Nanoseconds d(on)<br>r i<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br>


IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 

IXYS REF: B_20N360(H7-B11) 10-17-13 

**==> picture [157 x 46] intentionally omitted <==**

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 



## Links

- [View this product on Novapart](https://novapart.co/products/IXBF20N360/igbt-45-a-29-v-230-w-36-kv-isoplus-i4-pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/littelfuse/ixbf20n360/transistor-3-6kv-45a/dp/3930307)
---

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