# IGBT, 78 A, 2.1 V, 325 W, 1.2 kV, TO-247AD, 3 Pins

![Product image](https://novapart.co/image/farnell:1829724/)

**URL**: https://novapart.co/products/IXA45IF1200HB/igbt-78-a-21-v-325-w-12-kv-to-247ad-3-pins
**SKU**: IXA45IF1200HB
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €7.8700
**Stock**: 10+

## Description

DC Collector Current:78A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3Pins;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 325W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 78A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1829724/)

## **IXA45IF1200HB** 

## **XPT IGBT** 

VCES = 1200 V I C25 = 78 A V = 1.8 V CE(sat) 

## Copack 

## **Part number** 

IXA45IF1200HB 

Backside: collector 

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## **Features / Advantages:** 

- Easy paralleling due to the positive temperature coefficient of the on-state voltage 

- Rugged XPT design (Xtreme light Punch Through) results in: 

- short circuit rated for 10 µsec. 

- very low gate charge 

- low EMI 

- square RBSOA @ 3x Ic 

- Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) 

## **Applications:** 

- AC motor drives 

- Solar inverter 

- Medical equipment 

- Uninterruptible power supply 

- Air-conditioning systems 

- Welding equipment 

- Switched-mode and resonant-mode power supplies 

- Inductive heating, cookers 

- Pumps, Fans 

## **Package:** TO-247 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- SONIC™ diode 

- fast and soft reverse recovery 

- low operating forward voltage 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20100702b 

© 2010 IXYS all rights reserved 

**IXA45IF1200HB** 

|Ratings<br>**IGBT**|Ratings<br>**IGBT**|Ratings<br>**IGBT**|Ratings<br>**IGBT**|Ratings<br>**IGBT**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|VCES<br>_collector emitter voltage_<br>T    =    25°C<br>VJ|||1200|V|
|VGES<br>VGEM<br>_max. transient gate emitter voltage_<br>_max. DC gate voltage_|||±20<br>±30|V<br>V|
|T    =   25°C<br>_collector current_<br>C<br>T    =       °C<br>C<br>IC25<br>IC<br>80<br>80|||78<br>45|A<br>A|
|_total power dissipation_<br>Ptot<br>T    =   25°C<br>C|||325|W|
|T    =       °C<br>_collector emitter saturation voltage_<br>VJ<br>VCE(sat)<br>I  =         A; V   = 15 V<br>C<br>GE<br>T    =   25°C<br>VJ<br>35<br>125||2.1<br>1.8|2.1|V<br>V|
|_gate emitter threshold voltage_<br>VGE(th)<br>I  =       mA; V   = V<br>C<br>GE<br>CE<br>T    =   25°C<br>VJ<br>1.5|5.4|5.9|6.5|V|
|_collector emitter leakage current_<br>ICES<br>V   = V    ; V   = 0 V<br>CE<br>CES<br>GE<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125||0.1|0.1|mA<br>mA|
|IGES<br>_gate emitter leakage current_<br>V    = ±20 V<br>GE|||500|nA|
|G(on)<br>_total gate charge_<br>V   =          V; V    = 15 V; I  =         A<br>CE<br>Q<br>GE<br>C<br>35<br>600||106||nC|
|_turn-on delay time_<br>t<br>T    =       °C<br>t<br>t<br>t<br>E<br>E<br>d(on)<br>r<br>d(off)<br>f<br>on<br>off<br>_current rise time_<br>_turn-off delay time_<br>_current fall time_<br>_turn-on energy per pulse_<br>_turn-off energy per pulse_<br>inductive load<br>V    =          V; I  =         A<br>V    = ±15 V; R  =       Ω<br>CE<br>C<br>GE<br>G<br>VJ<br>35<br>27<br>600<br>125||70<br>40<br>250<br>100<br>3.8<br>4.1||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ|
|_reverse bias safe operating area_<br>RBSOA<br>T    =       °C<br>VJ<br>V    = ±15 V; R  =       Ω<br>GE<br>G<br>V       =         V<br>CEmax<br>1200<br>27<br>I CM<br>125|||105|A|
|_short circuit safe operating area_<br>SCSOA<br>T    =       °C<br>VJ<br>V    =         V; V   = ±15 V<br>CE<br>GE<br>_short circuit duration_<br>t<br>_short circuit current_<br>I<br>SC<br>SC<br>R  =       Ω; non-repetitive<br>G<br>27<br>900<br>V       =         V<br>CEmax<br>900<br>125||140|10|µs<br>A|
|R thJC<br>_thermal resistance junction to case_|||0.38|K/W|
|RthCH<br>_thermal resistance case to heatsink_||0.25||K/W|
||||1200|V|
|**Diode**|||||
|VRRM<br>_max. repetitive reverse voltage_<br>T    =   25°C<br>VJ|||||
|T    =   25°C<br>_forward current_<br>C<br>T    =       °C<br>C<br>IF25<br>IF<br>80<br>80|||60<br>33|A<br>A|
|T    =   25°C<br>_forward voltage_<br>VJ<br>T    = 125°C<br>VJ<br>VF<br>I  =         A<br>F<br>30||1.95|2.20|V<br>V|
|T    =   25°C<br>_reverse current_<br>VJ<br>T    = 125°C<br>VJ<br>IR<br>R<br>RRM<br>V  = V<br>* not applicable, see Ices value above||*|*|mA<br>mA|
|-di  /dt =          A/µs<br>T    = 125°C<br>VJ<br>Q<br>I<br>t<br>rr<br>RM<br>rr<br>_reverse recovery charge_<br>_max. reverse recovery current_<br>_reverse recovery time_<br>V  =<br>I  =         A; V   = 0 V<br>F<br>F<br>GE<br>E rec<br>_reverse recovery energy_<br>R<br>30<br>-600<br>600 V||3.5<br>30<br>350<br>0.9||µC<br>A<br>ns<br>mJ|
|R thJC<br>_thermal resistance junction to case_|||0.7|K/W|
|R thCH<br>_thermal resistance case to heatsink_||0.25||K/W|
||||||



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20100702b 

© 2010 IXYS all rights reserved 

**IXA45IF1200HB** 

|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal|||70|A|
|TVJ<br>_virtual junction temperature_|-40||150|°C|
|Top<br>_operation temperature_|-40||125|°C|
|Tstg<br>_storage temperature_|-40||150|°C|
|Weight||6||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2||
||20||||



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Product Marking<br>Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

|I|=|IGBT|
|---|---|---|
|X|=|XPT IGBT|
|A|=|Gen 1 / std|
|45|=|Current Rating [A]|
|IF|=|Copack|
|1200|=|Reverse Voltage [V]|
|HB|=|TO-247AD (3)|



|Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|
|Standard|IXA45IF1200HB|IXA45IF1200HB|Tube|30|507837|



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20100702b 

© 2010 IXYS all rights reserved 

**IXA45IF1200HB** 

## **Outlines TO-247** 

|||||||||||||||E|E|E||||||||||||A|A|A|A2||Ø|Ø|P|P||||ØP1|ØP1|ØP1|D2|D2||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||
|Q||||||||||||||||||||||||||||||||S|||||||||||||**Sym.**|**Inches**<br>**min.**<br>**max.**||**Millimeter**<br>**min.**<br>**max.**||
||||||||||||||||||||||||||||||||||||||||||||||A|0.185|0.209|4.70|5.30|
||||||||||||||||||||||||||||||||||||||||||||D1||A1|0.087|0.102|2.21|2.59|
||||||||||||||||||||||||||D||||||||||||||||||||A2|0.059|0.098|1.50|2.49|
|2xE2|||||||||||||||||||||||||||||||||||||||||||||D<br>E|0.819<br>0.610|0.845<br>0.640|20.79<br>15.48|21.45<br>16.24|
|||||||||||||||||||||||||||||||||||||||||**4**|||||E2|0.170|0.216|4.31|5.48|
||||||||**1**||||||**2**|||||**3**|||||||||||||||||||||||||||e<br>L|0.215<br>0.780|BSC<br>0.800|5.46<br>19.80|BSC<br>20.30|
||||||||||||||||||||||||||||||||||||||||||||||L1|-|0.177|-|4.49|
||L1||||||||||||||||||||||||||||||||||||E1||||||||Ø P|0.140|0.144|3.55|3.65|
||||||||||||||||||||||||||||||||||||||||||||||Q|0.212|0.244|5.38|6.19|
||||||||||||||||||||||||||||||||||||||||||||||S|0.242|BSC|6.14|BSC|
||||||||||||||||||||||||||L||||||||||||||||||||b|0.039|0.055|0.99|1.40|
||||||||||||||||||||||||||||||||||||||||||||||b2|0.065|0.094|1.65|2.39|
||||||||||||||||||||||||||||||||||||||||||||||b4|0.102|0.135|2.59|3.43|
||2xb2|||||||||b4|||||||||||||||3xb||C|||A1|||||||||||||||c<br>D1<br>D2<br>E1|0.015<br>0.515<br>0.020<br>0.530|0.035<br>-<br>0.053<br>-|0.38<br>13.07<br>0.51<br>13.45|0.89<br>-<br>1.35<br>-|
|||||||||||2x||e|||||||||||||||||||||||||||||||||Ø P1|-|0.29|-|7.39|
|||||||||||||||||||||||||||||||||||||||||||||||||||



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2 (C)<br>(G) 1<br>3 (E)<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20100702b 

© 2010 IXYS all rights reserved 

**IXA45IF1200HB** 

## **IGBT** 

**==> picture [508 x 660] intentionally omitted <==**

**----- Start of picture text -----**<br>
70 70<br>VGE = 15 V V GE = 15 V 13 V<br>17 V 11 V<br>60 60 19 V<br>50 50<br>IC 40 T VJ  = 25°C IC 40 T VJ  = 125°C<br>[A] 30 [A] 30<br>TVJ = 125°C 9 V<br>20 20<br>10 10<br>0 0<br>0 1 2 3 0 1 2 3 4 5<br>VCE [V] VCE   [V]<br>Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics<br>70 20<br>IC = 35 A<br>60 VCE = 600 V<br>15<br>50<br>IC 40 VGE<br>10<br>[A] 30 [V]<br>20<br>5<br>TVJ = 125°C<br>10<br>TVJ = 25°C<br>0 0<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140<br>VGE [V] QG [nC]<br>Fig. 3 Typ. tranfer characteristics Fig. 4 Typ. turn-on gate charge<br>10 R G = 27 Eon 6 IC =   35 A<br>VCE = 600 V VCE = 600 V<br>8 T VVJ GE  = ±15 V = 125°C T V VJGE = 125°C  = ±15 V Eon<br>5<br>6 Eoff<br>E E<br>[mJ] 4 [mJ] Eoff<br>4<br>2<br>0 3<br>0 20 40 60 80 20 40 60 80<br>IC [A] RG [ ]<br>Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy vs. gate resistance<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20100702b 

© 2010 IXYS all rights reserved 

**IXA45IF1200HB** 

## **Diode** 

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**----- Start of picture text -----**<br>
60 7<br>T VJ = 125°C<br>50 6 V R = 600 V<br>60 A<br>40 5<br>IF Qrr<br>30 4<br>30 A<br>[A] [µC]<br>20 3<br>TVJ = 125°C 15 A<br>TVJ = 25°C<br>10 2<br>0 1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 300 400 500 600 700 800 900 1000 1100<br>VF [V] diF /dt [A/µs]<br>Fig. 7  Typ. Forward current versus VF Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
70<br>60 TVJ = 125°C 60 A<br>VR = 600 V<br>50<br>30 A<br>IRR 40<br>15 A<br>[A] 30<br>20<br>10<br>0<br>300 400 500 600 700 800 900 1000 1100<br>diF /dt [A/µs]<br>Fig. 9  Typ. peak reverse current IRM vs. di/dt<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
700<br>600 TVJ = 125°C<br>VR = 600 V<br>500<br>trr 400<br>[ns] 300<br>60 A<br>30 A<br>200<br>15 A<br>100<br>0<br>300 400 500 600 700 800 900 1000 1100<br>diF /dt [A/µs]<br>**----- End of picture text -----**<br>


Fig. 10  Typ. recovery time trr versus di/dt 

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**----- Start of picture text -----**<br>
2.0 1<br>Diode<br>TVJ = 125°C<br>VR = 600 V<br>1.6<br>60 A IGBT<br>30 A<br>Erec 1.2 ZthJC<br>0.1<br>[mJ] 0.8 [K/W]<br>15 A Inverter-IGBT Inverter-FRD<br>R i  t i    R i     t i<br>1 0.070 0.0006 0.16  0.0005<br>0.4 2 0.113 0.2 0.12  0.004<br>3 0.055 0.006 0.15  0.02<br>4 0.142 0.05 0.27  0.15<br>0.0 0.01<br>300 400 500 600 700 800 900 1000 1100 0.001 0.01 0.1 1 10<br>diF /dt [A/µs] tp [s]<br>Fig. 5 Typ. recovery energy Erec versus di/dt Fig. 12  Typ. transient thermal impedance<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20100702b 

© 2010 IXYS all rights reserved 

**==> picture [157 x 46] intentionally omitted <==**

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- [View this product on Novapart](https://novapart.co/products/IXA45IF1200HB/igbt-78-a-21-v-325-w-12-kv-to-247ad-3-pins)
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