# IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-247AD, 3 Pins

![Product image](https://novapart.co/image/farnell:1829714/)

**URL**: https://novapart.co/products/IXA12IF1200HB/igbt-20-a-21-v-85-w-12-kv-to-247ad-3-pins
**SKU**: IXA12IF1200HB
**Manufacturer**: IXYS SEMICONDUCTOR
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.2900
**Stock**: 10+

## Description

DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:85W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3Pins; O

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Jan-2023) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 85W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AD |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1829714/)

## **IXA12IF1200HB** 

## **XPT IGBT** 

preliminary VCES = 1200 V I C25 = 20 A V = 1.8 V CE(sat) 

## Copack 

## **Part number** 

IXA12IF1200HB 

Backside: collector 

**==> picture [106 x 91] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 (C)<br>(G) 1<br>3 (E)<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- Easy paralleling due to the positive temperature coefficient of the on-state voltage 

- Rugged XPT design (Xtreme light Punch Through) results in: 

- short circuit rated for 10 µsec. 

- very low gate charge 

- low EMI 

- square RBSOA @ 3x Ic 

- Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) 

## **Applications:** 

- AC motor drives 

- Solar inverter 

- Medical equipment 

- Uninterruptible power supply 

- Air-conditioning systems 

- Welding equipment 

- Switched-mode and resonant-mode power supplies 

- Inductive heating, cookers 

- Pumps, Fans 

## **Package:** TO-247 

   - Industry standard outline 

   - RoHS compliant 

   - Epoxy meets UL 94V-0 

- SONIC™ diode 

- fast and soft reverse recovery 

- low operating forward voltage 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20110330a 

© 2011 IXYS all rights reserved 

**IXA12IF1200HB** 

|preliminary<br>Ratings<br>**IGBT**|preliminary<br>Ratings<br>**IGBT**|preliminary<br>Ratings<br>**IGBT**|preliminary<br>Ratings<br>**IGBT**|preliminary<br>Ratings<br>**IGBT**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|VCES<br>_collector emitter voltage_<br>T    =    25°C<br>VJ|||1200|V|
|VGES<br>VGEM<br>_max. transient gate emitter voltage_<br>_max. DC gate voltage_|||±20<br>±30|V<br>V|
|T    =   25°C<br>_collector current_<br>C<br>T    =       °C<br>C<br>IC25<br>IC<br>100<br>100|||20<br>13|A<br>A|
|_total power dissipation_<br>Ptot<br>T    =   25°C<br>C|||85|W|
|T    =       °C<br>_collector emitter saturation voltage_<br>VJ<br>VCE(sat)<br>I  =         A; V   = 15 V<br>C<br>GE<br>T    =   25°C<br>VJ<br>10<br>125||2.1<br>1.8|2.1|V<br>V|
|_gate emitter threshold voltage_<br>VGE(th)<br>I  =       mA; V   = V<br>C<br>GE<br>CE<br>T    =   25°C<br>VJ<br>0.3|5.4|5.9|6.5|V|
|_collector emitter leakage current_<br>ICES<br>V   = V    ; V   = 0 V<br>CE<br>CES<br>GE<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125||0.1|0.1|mA<br>mA|
|IGES<br>_gate emitter leakage current_<br>V    = ±20 V<br>GE|||500|nA|
|G(on)<br>_total gate charge_<br>V   =          V; V    = 15 V; I  =         A<br>CE<br>Q<br>GE<br>C<br>10<br>600||27||nC|
|_turn-on delay time_<br>t<br>T    =       °C<br>t<br>t<br>t<br>E<br>E<br>d(on)<br>r<br>d(off)<br>f<br>on<br>off<br>_current rise time_<br>_turn-off delay time_<br>_current fall time_<br>_turn-on energy per pulse_<br>_turn-off energy per pulse_<br>inductive load<br>V    =          V; I  =         A<br>V    = ±15 V; R  =       Ω<br>CE<br>C<br>GE<br>G<br>VJ<br>10<br>100<br>600<br>125||70<br>40<br>250<br>100<br>1.1<br>1.1||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ|
|_reverse bias safe operating area_<br>RBSOA<br>T    =       °C<br>VJ<br>V    = ±15 V; R  =       Ω<br>GE<br>G<br>V       =         V<br>CEmax<br>1200<br>100<br>I CM<br>125|||30|A|
|_short circuit safe operating area_<br>SCSOA<br>T    =       °C<br>VJ<br>V    =         V; V   = ±15 V<br>CE<br>GE<br>_short circuit duration_<br>t<br>_short circuit current_<br>I<br>SC<br>SC<br>R  =       Ω; non-repetitive<br>G<br>100<br>900<br>V       =         V<br>CEmax<br>900<br>125||40|10|µs<br>A|
|R thJC<br>_thermal resistance junction to case_|||1.5|K/W|
|RthCH<br>_thermal resistance case to heatsink_||0.25||K/W|
||||1200|V|
|**Diode**|||||
|VRRM<br>_max. repetitive reverse voltage_<br>T    =   25°C<br>VJ|||||
|T    =   25°C<br>_forward current_<br>C<br>T    =       °C<br>C<br>IF25<br>IF<br>100<br>100|||22<br>14|A<br>A|
|T    =   25°C<br>_forward voltage_<br>VJ<br>T    = 125°C<br>VJ<br>VF<br>I  =         A<br>F<br>10||1.95|2.20|V<br>V|
|T    =   25°C<br>_reverse current_<br>VJ<br>T    = 125°C<br>VJ<br>IR<br>R<br>RRM<br>V  = V<br>* not applicable, see Ices value above||*|*|mA<br>mA|
|-di  /dt =          A/µs<br>T    = 125°C<br>VJ<br>Q<br>I<br>t<br>rr<br>RM<br>rr<br>_reverse recovery charge_<br>_max. reverse recovery current_<br>_reverse recovery time_<br>V  =<br>I  =         A; V   = 0 V<br>F<br>F<br>GE<br>E rec<br>_reverse recovery energy_<br>R<br>10<br>-250<br>600 V||1.3<br>10.5<br>350<br>0.35||µC<br>A<br>ns<br>mJ|
|R thJC<br>_thermal resistance junction to case_|||1.8|K/W|
|R thCH<br>_thermal resistance case to heatsink_||0.25||K/W|
||||||



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20110330a 

© 2011 IXYS all rights reserved 

**IXA12IF1200HB** 

preliminary 

|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|Ratings<br>**Package**<br>**TO-247**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|I RMS<br>_RMS current_<br>per terminal|||70|A|
|TVJ<br>_virtual junction temperature_|-40||150|°C|
|Top<br>_operation temperature_|-40||125|°C|
|Tstg<br>_storage temperature_|-40||150|°C|
|Weight||6||g|
|M D<br>_mounting torque_<br>FC<br>_mounting force with clip_|0.8||1.2||
||20||||



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Product Marking<br>Logo IXYS<br>Part No. XXXXXXXXX<br>Assembly Line Zyyww<br>abcd<br>Assembly Code<br>Date Code<br>**----- End of picture text -----**<br>


## Part number 

- I = IGBT 

- X = XPT IGBT A = Gen 1 / std 

- 12 = Current Rating [A] IF = Copack 

- 1200 = Reverse Voltage [V] HB = TO-247AD (3) 

|Ordering||Part Number||Markingon Product|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|---|---|---|
|Standard||IXA12IF1200HB||IXA12IF1200HB||Tube|30|508453|
|||||||1200<br>Voltage class<br>1200|||
|||Similar Part||Package||Voltage class|||
|||IXA12IF1200PB|TO-220AB(3)|||1200|||
|||IXA12IF1200TC|TO-268AA(D3Pak) (2)|||1200|||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20110330a 

© 2011 IXYS all rights reserved 

**IXA12IF1200HB** 

preliminary 

## **Outlines TO-247** 

|||||||||||||||E|E|E||||||||||||A|A|A|A2||Ø|Ø|P|P||||ØP1|ØP1|ØP1|D2|D2||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||
|Q||||||||||||||||||||||||||||||||S|||||||||||||**Sym.**|**Inches**<br>**min.**<br>**max.**||**Millimeter**<br>**min.**<br>**max.**||
||||||||||||||||||||||||||||||||||||||||||||||A|0.185|0.209|4.70|5.30|
||||||||||||||||||||||||||||||||||||||||||||D1||A1|0.087|0.102|2.21|2.59|
||||||||||||||||||||||||||D||||||||||||||||||||A2|0.059|0.098|1.50|2.49|
|2xE2|||||||||||||||||||||||||||||||||||||||||||||D<br>E|0.819<br>0.610|0.845<br>0.640|20.79<br>15.48|21.45<br>16.24|
|||||||||||||||||||||||||||||||||||||||||**4**|||||E2|0.170|0.216|4.31|5.48|
||||||||**1**||||||**2**|||||**3**|||||||||||||||||||||||||||e<br>L|0.215<br>0.780|BSC<br>0.800|5.46<br>19.80|BSC<br>20.30|
||||||||||||||||||||||||||||||||||||||||||||||L1|-|0.177|-|4.49|
||L1||||||||||||||||||||||||||||||||||||E1||||||||Ø P|0.140|0.144|3.55|3.65|
||||||||||||||||||||||||||||||||||||||||||||||Q|0.212|0.244|5.38|6.19|
||||||||||||||||||||||||||||||||||||||||||||||S|0.242|BSC|6.14|BSC|
||||||||||||||||||||||||||L||||||||||||||||||||b|0.039|0.055|0.99|1.40|
||||||||||||||||||||||||||||||||||||||||||||||b2|0.065|0.094|1.65|2.39|
||||||||||||||||||||||||||||||||||||||||||||||b4|0.102|0.135|2.59|3.43|
||2xb2|||||||||b4|||||||||||||||3xb||C|||A1|||||||||||||||c<br>D1<br>D2<br>E1|0.015<br>0.515<br>0.020<br>0.530|0.035<br>-<br>0.053<br>-|0.38<br>13.07<br>0.51<br>13.45|0.89<br>-<br>1.35<br>-|
|||||||||||2x||e|||||||||||||||||||||||||||||||||Ø P1|-|0.29|-|7.39|
|||||||||||||||||||||||||||||||||||||||||||||||||||



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**----- Start of picture text -----**<br>
2 (C)<br>(G) 1<br>3 (E)<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20110330a 

© 2011 IXYS all rights reserved 

## **IXA12IF1200HB** 

preliminary 

## **IGBT** 

**==> picture [505 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 20 20<br>VGE = 15 V VGE = 15 V 13 V<br>17 V<br>19 V<br>16 16 16<br>IC TVJ = 125°C 11 V<br>12 TVJ = 25°C IC 12 IC 12<br>[A]<br>8 TVJ = 125°C [A] 8 [A] 8<br>9 V<br>4 4 4<br>TVJ = 125°C<br>TVJ = 25°C<br>0 0 0<br>0 1 2 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13<br>VCE [V] VCE [V] VGE [V]<br>Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. tranfer characteristics<br>**----- End of picture text -----**<br>


Fig. 3 Typ. tranfer characteristics 

**==> picture [507 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 3.0 1.8<br>15 VICCE = 600 V= 10 A 2.52.0 TVRVVJCEGEG =  100 = 125°C = 600 V = ±15 V Eon 1.6 VI T V C VJCEGE=  = 125°C  = 600 V = ±15 V10 A Eon<br>VGE E 1.4<br>10 E 1.5 E<br>[V] off<br>[mJ] 1.2<br>[mJ] 1.0 Eoff<br>5<br>1.0<br>0.5<br>0 0.0 0.8<br>0 10 20 30 0 4 8 12 16 20 80 120 160 200 240<br>QG [nC] IC   [A] RG [ ]<br>Fig. 4 Typ. turn-on gate charge<br>Fig. 5 Typ. switching energy Fig. 6 Typ. switching energy<br>vs. collector current<br>**----- End of picture text -----**<br>


Fig. 6 Typ. switching energy vs. gate resistance 

Fig. 7 Typ. transient thermal impedance junction to case 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20110330a 

© 2011 IXYS all rights reserved 

preliminary 

## **IXA12IF1200HB** 

## **Diode** 

**==> picture [509 x 443] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 2.4 24<br>2.0 20 A TV VJ R = 125°C= 600 V TVVJR = 125°C= 600 V<br>20 A<br>15 20<br>1.6<br>IF Qrr 10 A IRM 10 A<br>10 1.2 16<br>[A] [μC] [A]<br>0.8 5 A 5 A<br>5 TVJ = 125°C 12<br>TVJ =   25°C<br>0.4<br>0 0.0 8<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 200 250 300 350 400 450 500 200 250 300 350 400 450 500<br>VF  [V] diF /dt [A/μs] diF /dt [A/μs]<br>Fig. 1 Typ. forward current Fig. 2 Typical reverse recov. charge Fig.3 Typ: peak reverse current<br>versus VF Qrr versus. diF /dt IRR versus diF /dt<br>500 0.6<br>20 A TVVJR = 125°C= 600 V 0.5 20 A VTVJR = 125°C= 600 V<br>400<br>10 A<br>trr Erec 0.4 10 A<br>300<br>[ns] 5 A [mJ] 0.3<br>200 5 A<br>0.2<br>100 0.1<br>200 250 300 350 400 450 500 200 250 300 350 400 450 500<br>diF /dt [A/μs] diF /dt [A/μs]<br>Fig. 4 Dynamic parameters Fig. 5 Typ. recovery time Fig. 6 Typ. recovery energy<br>Qrr, IRM versus TVJ trr versus diF /dt Erec vs. diF /dt<br>**----- End of picture text -----**<br>


Fig. 7 Typ. transient thermal impedance junction to case 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20110330a 

© 2011 IXYS all rights reserved 

**==> picture [157 x 46] intentionally omitted <==**

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- [View this product on Novapart](https://novapart.co/products/IXA12IF1200HB/igbt-20-a-21-v-85-w-12-kv-to-247ad-3-pins)
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