# Power MOSFET, P Channel, 60 V, 1.1 A, 0.621 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3267798/)

**URL**: https://novapart.co/products/ISP75DP06LMXTSA1/power-mosfet-p-channel-60-v-11-a-0621-ohm-sot-223
**SKU**: ISP75DP06LMXTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1280
**Stock**: 200+
**Lead Time**: 316 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | OptiMOS |
| Qualification | - |
| Power Dissipation | 4.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.1A |
| Drain Source On State Resistance | 0.621ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267798/)

**ISP75DP06LM** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

**==> picture [60 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
R DS(on) @ V GS<br>**----- End of picture text -----**<br>


|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Unit**<br>V<br> ~~Parameters~~|**Unit**<br>V<br> ~~Parameters~~|
|---|---|---|---|---|
||_R_DS(on),max|750||mΩ|
||_I_D|-1.1||A|



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**----- Start of picture text -----**<br>
SOT-223-4<br>4<br>&<br>1 \<br>&<br>2<br>3<br>Drain<br>Pin 2, 4<br>Gate<br>Pin 1<br>Gh<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|ISP75DP06LM<br>~~Type/OrderingCode |~~|PG-SOT223<br>~~|~~<br>~~|~~|75DP06LM|-<br>~~Related Links~~|



Final Data Sheet 

1 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP75DP06LM** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.0,��2019-03-25 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP75DP06LM** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-|-|-1.1|A|_V_GS=-10V,_T_A=25°C,<br>_R_THJA=70°C/W|
|Continuous drain current1)|_I_D|-<br>-<br>-|-<br>-<br>-|-0.7<br>-1.0<br>-0.6|A|_V_GS=-10V,_T_A=100°C,<br>_R_THJA=70°C/W<br>_V_GS=-4.5V,_T_A=25°C,<br>_R_THJA=70°C/W<br>_V_GS=-4.5V,_T_A=100°C,<br>_R_THJA=70°C/W|
|Pulsed drain current2)|_ID,pulse_|-|-|-4.4|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|36|mJ|_I_D=-1.1A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|4.2<br>1.8|W|_T_S=25°C<br>_T_A=25°C,_R_THJA=70°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - soldering<br>point|_R_thJS|-|-|30|°C/W|-|
|Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|70|°C/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2019-03-25 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP75DP06LM** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|-60|-|-|V|_V_GS=0V,_I_D=-250µA|
|Gate threshold voltage|_V_GS(th)|-1|-1.5|-2|V|_V_DS=_V_GS,_I_D=-77µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-0.1<br>-10|-1<br>-100|µA|_V_DS=-60V,_V_GS=0V,_T_j=25°C<br>_V_DS=-60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-10|-100|nA|_V_GS=-20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|621<br>748|750<br>1000|mΩ|_V_GS=-10V,_I_D=-1.1A<br>_V_GS=-4.5V,_I_D=-1A|
|Gate resistance|_R_G|-|75|-|Ω|-|
|Transconductance|_g_fs|-|1.8|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=-1.1A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|120|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Output capacitance|_C_oss|-|19|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|5|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|3|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.1A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|5|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.1A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|40|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.1A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|14|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.1A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[1)]** 

|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|-0.4|-|nC|_V_DD=-30V,_I_D=-1.1A,_V_GS=0to-10V|
|Gate charge at threshold|_Q_g(th)|-|-0.2|-|nC|_V_DD=-30V,_I_D=-1.1A,_V_GS=0to-10V|
|Gate to drain charge|_Q_gd|-|-1.1|-|nC|_V_DD=-30V,_I_D=-1.1A,_V_GS=0to-10V|
|Switchingcharge|_Q_sw|-|-1.3|-|nC|_V_DD=-30V,_I_D=-1.1A,_V_GS=0to-10V|
|Gate charge total|_Q_g|-|-4.0|-|nC|_V_DD=-30V,_I_D=-1.1A,_V_GS=0to-10V|
|Gate plateau voltage|_V_plateau|-|-3.4|-|V|_V_DD=-30V,_I_D=-1.1A,_V_GS=0to-10V|
|Output charge|_Q_oss|-|-1.3|-|nC|_V_DD=-30V,_V_GS=0V|



> 1) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2019-03-25 

4 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP75DP06LM** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|-1.1|A|_T_A=25°C|
|Diode pulse current|_I_S,pulse|-|-|-4.4|A|_T_A=25°C|
|Diode forward voltage|_V_SD|-|-0.9|-1.2|V|_V_GS=0V,_I_F=-1.1A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|23|-|ns|_V_R=-30V,_I_F=-1.1A,d_i_F/d_t_=-100A/µs|
|Reverse recoverycharge|_Q_rr|-|-27|-|nC|_V_R=-30V,_I_F=-1.1A,d_i_F/d_t_=-100A/µs|



Final Data Sheet 

Rev.�2.0,��2019-03-25 

5 

**OptiMOS[TM] ISP75DP06LM** 

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Final Data Sheet 

6 

**OptiMOS[TM] ISP75DP06LM** 

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Final Data Sheet 

7 

**OptiMOS[TM] ISP75DP06LM** 

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Final Data Sheet 

8 

**OptiMOS[TM] ISP75DP06LM** 

**==> picture [527 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1] 10<br>-12 V<br>-30 V<br>a -48 V eee<br>a M e | I<br>ee ell 8 SoC EEE EE WA<br>TI<br>10 [0]<br>CT CTI ) || EERE EERE RAS<br>25 °C<br>6<br>=> PTT ENT ANAETTTT > nn ane<br>100 °C<br>"ericNas [FREER FEAEEEEE<br>4<br>10 [-1] CUISAU) 125 °C EERE 7 EE<br>= TTI CTI | EEEE EEYAREERE EEE<br>PFE EEaaEE S TPE rPrerrrrrerereereA<br>2<br>ne ey<br>a ee Ate fled pee | ey<br>10 [-2] EIECT ECT | 0 JARREFAPPi [| | | [| | | | | ft | ft ff tf<br>10 [0] 10 [1] 10 [2] 10 [3] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>t AV [us] -Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>Diagram Gate charge waveforms<br>70<br>ETE EET<br>OEE EET Ves<br>HUET ;<br>PEELE :<br>65 UTEA<br>s U TLTT<br>ETP<br>EEE<br>60 ETT<br>HU ATT<br>PAA /<br>PLATE oa -<br>LE ° a gate<br>55<br>PATE, PPTa |.<br>-75 -50 -25 0 25 50 75 100 125 150<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>AV GS<br>-I -V<br>BR(DSS)<br>-V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] ISP75DP06LM** 

Final Data Sheet 

10 

**OptiMOS[TM] ISP75DP06LM** 

## ISP75DP06LM 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-03-25|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/ISP75DP06LMXTSA1/power-mosfet-p-channel-60-v-11-a-0621-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/isp75dp06lmxtsa1/mosfet-p-ch-60v-1-1a-150deg-c/dp/3267798)
---

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