# Power MOSFET, P Channel, 60 V, 1.9 A, 0.25 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:3267796/)

**URL**: https://novapart.co/products/ISP25DP06NMXTSA1/power-mosfet-p-channel-60-v-19-a-025-ohm-sot-223
**SKU**: ISP25DP06NMXTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2000
**Stock**: 200+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | OptiMOS |
| Qualification | - |
| Power Dissipation | 4.2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.9A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267796/)

**ISP25DP06NM** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

**==> picture [28 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
R DS(on)<br>**----- End of picture text -----**<br>


|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Parameter**<br>**Value**<br>_V_DS<br>-60<br>~~Table 1 Key Performance ~~|**Unit**<br>V<br> ~~Parameters~~|**Unit**<br>V<br> ~~Parameters~~|
|---|---|---|---|---|
||_R_DS(on),max|250||mΩ|
||_I_D|-1.9||A|



**==> picture [114 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-223-4<br>4<br>&<br>1 \<br>&<br>2<br>3<br>Drain<br>Pin 2, 4<br>Gate<br>Pin 1<br>Gh<br>Source<br>Pin 3<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|ISP25DP06NM<br>~~Type/OrderingCode |~~|PG-SOT223<br>~~|~~|25DP06NM<br>|-<br>|



Final Data Sheet 

1 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP25DP06NM** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.0,��2019-03-26 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP25DP06NM** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current1)|_I_D|-|-|-1.9|A|_V_GS=-10V,_T_A=25°C,<br>_R_THJA=70°C/W|
|Continuous drain current1)|_I_D|-|-|-1.2|A|_V_GS=-10V,_T_A=100°C,<br>_R_THJA=70°C/W|
|Pulsed drain current2)|_ID,pulse_|-|-|-7.6|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|257|mJ|_I_D=-1.9A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|4.2<br>1.8|W|_T_S=25°C<br>_T_A=25°C,_R_THJA=70°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - soldering<br>point|_R_thJS|-|-|25|°C/W|-|
|Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|70|°C/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) See Diagram 3 for more detailed information 

> 3) See Diagram 13 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2019-03-26 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP25DP06NM** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|-60|-|-|V|_V_GS=0V,_I_D=-250µA|
|Gate threshold voltage|_V_GS(th)|-2.1|-3|-4|V|_V_DS=_V_GS,_I_D=-270µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-0.1<br>-10|-1<br>-100|µA|_V_DS=-60V,_V_GS=0V,_T_j=25°C<br>_V_DS=-60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-10|-100|nA|_V_GS=-20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|189|250|mΩ|_V_GS=-10V,_I_D=-1.9A|
|Gate resistance|_R_G|-|5|-|Ω|-|
|Transconductance|_g_fs|-|3.1|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=-1.9A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|420|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Output capacitance|_C_oss|-|62|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|18|-|pF|_V_GS=0V,_V_DS=-30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.9A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|7|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.9A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.9A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|5|-|ns|_V_DD=-30V,_V_GS=-10V,_I_D=-1.9A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[1)]** 

|**Table6Gatechargecharacte**|**ristics1)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|-1.9|-|nC|_V_DD=-30V,_I_D=-1.9A,_V_GS=0to-10V|
|Gate charge at threshold|_Q_g(th)|-|-1.2|-|nC|_V_DD=-30V,_I_D=-1.9A,_V_GS=0to-10V|
|Gate to drain charge|_Q_gd|-|-3.8|-|nC|_V_DD=-30V,_I_D=-1.9A,_V_GS=0to-10V|
|Switchingcharge|_Q_sw|-|-4.5|-|nC|_V_DD=-30V,_I_D=-1.9A,_V_GS=0to-10V|
|Gate charge total|_Q_g|-|-10.8|-|nC|_V_DD=-30V,_I_D=-1.9A,_V_GS=0to-10V|
|Gate plateau voltage|_V_plateau|-|-4.6|-|V|_V_DD=-30V,_I_D=-1.9A,_V_GS=0to-10V|
|Output charge|_Q_oss|-|-5|-|nC|_V_DD=-30V,_V_GS=0V|



1) See diagram ,Gate charge waveforms, for gate charge parameter definition Final Data Sheet 4 

Rev.�2.0,��2019-03-26 

**OptiMOS[TM] �Small�Signal�Transistor,�-60�V ISP25DP06NM** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|-1.5|A|_T_A=25°C|
|Diode pulse current|_I_S,pulse|-|-|-6|A|_T_A=25°C|
|Diode forward voltage|_V_SD|-|-0.81|-1.2|V|_V_GS=0V,_I_F=-1.5A,_T_j=25°C|
|Reverse recoverytime|_t_rr|-|30|-|ns|_V_R=-30V,_I_F=-1.5A,d_i_F/d_t_=-100A/µs|
|Reverse recoverycharge|_Q_rr|-|-58|-|nC|_V_R=-30V,_I_F=-1.5A,d_i_F/d_t_=-100A/µs|



Final Data Sheet 

Rev.�2.0,��2019-03-26 

5 

**OptiMOS[TM] ISP25DP06NM** 

**==> picture [540 x 633] intentionally omitted <==**

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Final Data Sheet 

6 

**OptiMOS[TM] ISP25DP06NM** 

**==> picture [527 x 633] intentionally omitted <==**

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Final Data Sheet 

7 

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Final Data Sheet 

8 

**OptiMOS[TM] ISP25DP06NM** 

**==> picture [526 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
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**==> picture [148 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>


**==> picture [259 x 287] intentionally omitted <==**

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Final Data Sheet 

9 

**OptiMOS[TM] ISP25DP06NM** 

Final Data Sheet 

10 

**OptiMOS[TM] ISP25DP06NM** 

## ISP25DP06NM 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-03-26|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/ISP25DP06NMXTSA1/power-mosfet-p-channel-60-v-19-a-025-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/isp25dp06nmxtsa1/mosfet-p-ch-60v-1-9a-150deg-c/dp/3267796)
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